JP3835983B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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Publication number
JP3835983B2
JP3835983B2 JP2000379540A JP2000379540A JP3835983B2 JP 3835983 B2 JP3835983 B2 JP 3835983B2 JP 2000379540 A JP2000379540 A JP 2000379540A JP 2000379540 A JP2000379540 A JP 2000379540A JP 3835983 B2 JP3835983 B2 JP 3835983B2
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Japan
Prior art keywords
plasma processing
gas
plasma
frequency power
substrate
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JP2000379540A
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Japanese (ja)
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JP2002184759A (ja
JP2002184759A5 (enExample
Inventor
直樹 鈴木
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
JP2000379540A 2000-12-14 2000-12-14 プラズマ処理装置およびプラズマ処理方法 Expired - Fee Related JP3835983B2 (ja)

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JP2000379540A JP3835983B2 (ja) 2000-12-14 2000-12-14 プラズマ処理装置およびプラズマ処理方法

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JP2000379540A JP3835983B2 (ja) 2000-12-14 2000-12-14 プラズマ処理装置およびプラズマ処理方法

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JP2002184759A JP2002184759A (ja) 2002-06-28
JP2002184759A5 JP2002184759A5 (enExample) 2005-07-14
JP3835983B2 true JP3835983B2 (ja) 2006-10-18

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JP2000379540A Expired - Fee Related JP3835983B2 (ja) 2000-12-14 2000-12-14 プラズマ処理装置およびプラズマ処理方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007032172A1 (ja) 2005-09-16 2007-03-22 Tohoku University プラズマ発生装置およびプラズマ発生方法
JP2013191687A (ja) * 2012-03-13 2013-09-26 Sekisui Chem Co Ltd 光半導体装置の製造方法及び光半導体装置

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JP2002184759A (ja) 2002-06-28

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