JP3828101B2 - 基板上に設けられたtera層から炭素を除去する方法 - Google Patents
基板上に設けられたtera層から炭素を除去する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 98
- 229910052799 carbon Inorganic materials 0.000 title claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 34
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- -1 6 Chemical class 0.000 description 7
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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Description
条件1
RF電力:ウエハに直接与えられる150ワット
O2 :20sccm
N2 :100sccm
圧力:5.33Pa(40mTorr)
プラズマ容量:6リットル
F/(N+O)比:0
条件2
RF電力:ウエハに直接与えられる120ワット
O2 :20sccm
N2 :100sccm
CHF3 :5sccm
圧力:5.33Pa(40mTorr)
プラズマ容量:6リットル
F/(N+O)比:0.0625
(1)基板上に設けられたTERA層から炭素を除去する方法であって、
(a)窒素を含むプラズマに前記層を曝す工程を含む方法。
(2)前記プラズマは、酸素およびフッ素の少なくとも1種を更に含む上記(1)に記載の方法。
(3)前記プラズマは、原子比で計算して、0.25よりも小さいF/(N+O)比を有する上記(2)に記載の方法。
(4)前記工程(a)の際に、生成されたCN化合物を検出する工程を更に含む上記(1)に記載の方法。
(5)前記CN化合物の値により前記工程(a)の終点を検出する工程を更に含む上記(4)に記載の方法。
(6)前記プラズマは、前記基板に与えられる0.4ワット/cm2 よりも低い強度を有するRFエネルギーで励起される上記(1)に記載の方法。
(7)前記TERA層は、Si−C−H−O物質をから成る上記(1)に記載の方法。
(8)前記工程(a)の後に、炭素が取り除かれたTERA層を除去する工程を更に含む上記(1)に記載の方法。
(9)前記TERA層は、二酸化シリコン層の上に設けられる上記(1)に記載の方法。
(10)基板上の窒化物層上に設けられた酸化物層上に設けられたパターン形成されたTERA層を有する半導体デバイスを処理する方法であって、
(a)TERA層パターンに従って、フッ素をベースにしたプラズマで酸化物層をエッチングする工程と、
(b)窒素を含むプラズマにTERA層を曝すことによってTERA層から炭素を除去する工程と、
(c)TERA層から酸化物層に転写されたパターンに従って窒化物層をエッチングする工程とを含む方法。
(11)前記工程(a)、(b)および(c)は、真空から前記半導体デバイスを移動することなく同一エッチング系で実行される上記(10)に記載の方法。
(12)前記窒素を含むプラズマは、酸素およびフッ素を更に含み、原子比で計算して、0.25より小さいF/(N+O)比を有する上記(10)に記載の方法。
(13)前記プラズマは、前記基板に与えられる0.4ワット/cm2 よりも低い強度を有するRFエネルギーで励起される上記(10)に記載の方法。
(14)基板上に設けられたTERA層から炭素を取り除く方法であって、
(a)酸素、フッ素および窒素を含むプラズマにTERA層を曝す工程を含む方法。
(15)前記プラズマは、原子比で計算して、0.25より小さいF/(N+O)比を有する上記(14)に記載の方法。
(16)前記工程(a)の際に、生成されたCN化合物を検出する工程を更に含む上記(14)に記載の方法。
(17)前記CN化合物の値により前記工程(a)の停止を検出する工程を更に含む上記(16)に記載の方法。
(18)前記プラズマは、前記基板に与えられる0.4ワット/cm2 よりも低い強度を有するRFエネルギーで励起される上記(14)に記載の方法。
22 窒化物層
24 酸化物層
26 TERA層
28 開口部
30 レジスト層
Claims (11)
- 基板上に設けられ、下層の膜のパターン転写マスクとして使われるハード・マスク層であるTERA層から炭素を除去する方法であって、
(a)窒素を含むプラズマに前記層を曝す工程を含み、
前記プラズマは、酸素およびフッ素の少なくとも1種を更に含み、
前記プラズマは、原子比で計算して、0.1よりも小さいF/(N+O)比を有し、
前記プラズマは、前記基板に与えられる0.4ワット/cm 2 よりも低い強度を有するRFエネルギーで励起される
方法。 - 前記工程(a)の際に、生成されたCN化合物を検出する工程を更に含む請求項1に記載の方法。
- 前記CN化合物の値により前記工程(a)の終点を検出する工程を更に含む請求項2に記載の方法。
- 前記TERA層は、Si−C−H−O物質から成る請求項1に記載の方法。
- 前記工程(a)の後に、炭素が取り除かれたTERA層を除去する工程を更に含む請求項1に記載の方法。
- 前記TERA層は、二酸化シリコン層の上に設けられる請求項1に記載の方法。
- 基板上の窒化物層上に設けられた酸化物層上に設けられたパターン形成されたTERA層を有する半導体デバイスを処理する方法であって、
(a)TERA層パターンに従って、フッ素をベースにしたプラズマで酸化物層をエッチングする工程と、
(b)窒素を含むプラズマにTERA層を曝すことによってTERA層から炭素を除去する工程と、
(c)TERA層から酸化物層に転写されたパターンに従って窒化物層をエッチングする工程とを含み、
前記窒素を含むプラズマは、酸素およびフッ素を更に含み、原子比で計算して、0.1より小さいF/(N+O)比を有し、
前記プラズマは、前記基板に与えられる0.4ワット/cm 2 よりも低い強度を有するRFエネルギーで励起される
方法。 - 前記工程(a)、(b)および(c)は、真空から前記半導体デバイスを移動することなく同一エッチング系で実行される請求項7に記載の方法。
- 基板上に設けられ、下層の膜のパターン転写マスクとして使われるハード・マスク層であるTERA層から炭素を取り除く方法であって、
(a)酸素、フッ素および窒素を含むプラズマにTERA層を曝す工程を含み、
前記プラズマは、原子比で計算して、0.1より小さいF/(N+O)比を有し、
前記プラズマは、前記基板に与えられる0.4ワット/cm 2 よりも低い強度を有するRFエネルギーで励起される
方法。 - 前記工程(a)の際に、生成されたCN化合物を検出する工程を更に含む請求項9に記載の方法。
- 前記CN化合物の値により前記工程(a)の停止を検出する工程を更に含む請求項10に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/244,362 US6903023B2 (en) | 2002-09-16 | 2002-09-16 | In-situ plasma etch for TERA hard mask materials |
Publications (2)
Publication Number | Publication Date |
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JP2004111958A JP2004111958A (ja) | 2004-04-08 |
JP3828101B2 true JP3828101B2 (ja) | 2006-10-04 |
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Country | Link |
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US (1) | US6903023B2 (ja) |
JP (1) | JP3828101B2 (ja) |
KR (1) | KR100586758B1 (ja) |
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US7877161B2 (en) | 2003-03-17 | 2011-01-25 | Tokyo Electron Limited | Method and system for performing a chemical oxide removal process |
TW200503066A (en) * | 2003-07-07 | 2005-01-16 | Macronix Int Co Ltd | Process for reworking semiconductor patterned photoresist layer |
US7199046B2 (en) * | 2003-11-14 | 2007-04-03 | Tokyo Electron Ltd. | Structure comprising tunable anti-reflective coating and method of forming thereof |
US7497959B2 (en) * | 2004-05-11 | 2009-03-03 | International Business Machines Corporation | Methods and structures for protecting one area while processing another area on a chip |
US7172969B2 (en) * | 2004-08-26 | 2007-02-06 | Tokyo Electron Limited | Method and system for etching a film stack |
US7485573B2 (en) * | 2006-02-17 | 2009-02-03 | International Business Machines Corporation | Process of making a semiconductor device using multiple antireflective materials |
US7718543B2 (en) * | 2006-12-08 | 2010-05-18 | Applied Materials, Inc. | Two step etching of a bottom anti-reflective coating layer in dual damascene application |
US8252696B2 (en) * | 2007-10-22 | 2012-08-28 | Applied Materials, Inc. | Selective etching of silicon nitride |
JP2011009636A (ja) * | 2009-06-29 | 2011-01-13 | Oki Semiconductor Co Ltd | ビアホールの形成方法 |
WO2018053487A1 (en) * | 2016-09-19 | 2018-03-22 | Tokyo Electron Limited | Method of in situ hard mask removal |
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US5394741A (en) * | 1990-07-11 | 1995-03-07 | Olympus Optical Co., Ltd. | Atomic probe microscope |
EP0511662B1 (en) * | 1991-04-30 | 1996-07-10 | Matsushita Electric Industrial Co., Ltd. | Scanning probe microscope, molecular processing method using the scanning probe microscope and DNA base arrangement detecting method |
WO1993018525A1 (en) * | 1992-03-13 | 1993-09-16 | Park Scientific Instruments Corp. | Scanning probe microscope |
US5372930A (en) * | 1992-09-16 | 1994-12-13 | The United States Of America As Represented By The Secretary Of The Navy | Sensor for ultra-low concentration molecular recognition |
US5470661A (en) * | 1993-01-07 | 1995-11-28 | International Business Machines Corporation | Diamond-like carbon films from a hydrocarbon helium plasma |
US5354985A (en) * | 1993-06-03 | 1994-10-11 | Stanford University | Near field scanning optical and force microscope including cantilever and optical waveguide |
US5690894A (en) * | 1995-05-23 | 1997-11-25 | The Regents Of The University Of California | High density array fabrication and readout method for a fiber optic biosensor |
US5807758A (en) * | 1995-07-21 | 1998-09-15 | Lee; Gil U. | Chemical and biological sensor using an ultra-sensitive force transducer |
JP3577141B2 (ja) * | 1995-09-22 | 2004-10-13 | オリンパス株式会社 | プローブ走査機構、および、それを用いた走査型プローブ顕微鏡 |
JP3260619B2 (ja) * | 1996-03-19 | 2002-02-25 | セイコーインスツルメンツ株式会社 | 光導波路プロ−ブおよび光システム |
JP3264824B2 (ja) * | 1996-04-11 | 2002-03-11 | セイコーインスツルメンツ株式会社 | 光伝搬体プローブと走査型近視野顕微鏡及び光伝搬体プローブの透過孔形成方法 |
US6165335A (en) * | 1996-04-25 | 2000-12-26 | Pence And Mcgill University | Biosensor device and method |
US5886102A (en) * | 1996-06-11 | 1999-03-23 | Shipley Company, L.L.C. | Antireflective coating compositions |
US5939709A (en) * | 1997-06-19 | 1999-08-17 | Ghislain; Lucien P. | Scanning probe optical microscope using a solid immersion lens |
US5926740A (en) * | 1997-10-27 | 1999-07-20 | Micron Technology, Inc. | Graded anti-reflective coating for IC lithography |
US6190839B1 (en) * | 1998-01-15 | 2001-02-20 | Shipley Company, L.L.C. | High conformality antireflective coating compositions |
US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6316167B1 (en) * | 2000-01-10 | 2001-11-13 | International Business Machines Corporation | Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof |
US6207583B1 (en) * | 1998-09-04 | 2001-03-27 | Alliedsignal Inc. | Photoresist ashing process for organic and inorganic polymer dielectric materials |
KR100307629B1 (ko) * | 1999-04-30 | 2001-09-26 | 윤종용 | 하이드로 카본계의 가스를 이용한 반사방지막의 형성 및 적용방법 |
JP4523094B2 (ja) * | 1999-10-19 | 2010-08-11 | 東京エレクトロン株式会社 | プラズマ処理方法 |
US6472306B1 (en) * | 2000-09-05 | 2002-10-29 | Industrial Technology Research Institute | Method of forming a dual damascene opening using CVD Low-K material and spin-on-polymer |
US6724069B2 (en) * | 2001-04-05 | 2004-04-20 | International Business Machines Corporation | Spin-on cap layer, and semiconductor device containing same |
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KR100586758B1 (ko) | 2006-06-08 |
KR20040024837A (ko) | 2004-03-22 |
US20040053504A1 (en) | 2004-03-18 |
US6903023B2 (en) | 2005-06-07 |
JP2004111958A (ja) | 2004-04-08 |
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