JP3813877B2 - 基板の処理方法 - Google Patents
基板の処理方法 Download PDFInfo
- Publication number
- JP3813877B2 JP3813877B2 JP2002012018A JP2002012018A JP3813877B2 JP 3813877 B2 JP3813877 B2 JP 3813877B2 JP 2002012018 A JP2002012018 A JP 2002012018A JP 2002012018 A JP2002012018 A JP 2002012018A JP 3813877 B2 JP3813877 B2 JP 3813877B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- wafer
- substrate
- interlayer insulating
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 77
- 238000003672 processing method Methods 0.000 title claims description 15
- 238000012545 processing Methods 0.000 claims description 112
- 238000010894 electron beam technology Methods 0.000 claims description 81
- 239000011229 interlayer Substances 0.000 claims description 75
- 238000010438 heat treatment Methods 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 54
- 238000000576 coating method Methods 0.000 claims description 31
- 239000011248 coating agent Substances 0.000 claims description 27
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 description 110
- 238000012546 transfer Methods 0.000 description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 26
- 239000001301 oxygen Substances 0.000 description 26
- 229910052760 oxygen Inorganic materials 0.000 description 26
- 239000007789 gas Substances 0.000 description 13
- 239000002904 solvent Substances 0.000 description 10
- 239000001307 helium Substances 0.000 description 8
- 229910052734 helium Inorganic materials 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 230000003028 elevating effect Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Formation Of Insulating Films (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002012018A JP3813877B2 (ja) | 2001-01-19 | 2002-01-21 | 基板の処理方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-12384 | 2001-01-19 | ||
| JP2001012384 | 2001-01-19 | ||
| JP2002012018A JP3813877B2 (ja) | 2001-01-19 | 2002-01-21 | 基板の処理方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005308249A Division JP4037431B2 (ja) | 2001-01-19 | 2005-10-24 | 基板の処理方法及び基板の処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002329719A JP2002329719A (ja) | 2002-11-15 |
| JP2002329719A5 JP2002329719A5 (enExample) | 2004-12-02 |
| JP3813877B2 true JP3813877B2 (ja) | 2006-08-23 |
Family
ID=26608018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002012018A Expired - Fee Related JP3813877B2 (ja) | 2001-01-19 | 2002-01-21 | 基板の処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3813877B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4435542B2 (ja) * | 2002-11-18 | 2010-03-17 | 東京エレクトロン株式会社 | 絶縁膜形成装置 |
| JP2004253749A (ja) | 2002-12-27 | 2004-09-09 | Tokyo Electron Ltd | 薄膜処理方法及び薄膜処理システム |
| JP2005116253A (ja) * | 2003-10-06 | 2005-04-28 | Toshiba Matsushita Display Technology Co Ltd | 表示装置の製造装置及び表示装置の製造方法 |
| JP4257252B2 (ja) | 2004-04-01 | 2009-04-22 | 株式会社東芝 | 半導体装置の製造方法 |
| JP4641844B2 (ja) | 2005-03-25 | 2011-03-02 | 大日本印刷株式会社 | 電子線照射装置 |
| KR20080051174A (ko) * | 2005-09-15 | 2008-06-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｘ-램프 히터를 구비한 진공 반응 챔버 |
| JP5195640B2 (ja) * | 2009-05-22 | 2013-05-08 | 東京エレクトロン株式会社 | 熱処理装置 |
-
2002
- 2002-01-21 JP JP2002012018A patent/JP3813877B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002329719A (ja) | 2002-11-15 |
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