JP3775259B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP3775259B2
JP3775259B2 JP2001233486A JP2001233486A JP3775259B2 JP 3775259 B2 JP3775259 B2 JP 3775259B2 JP 2001233486 A JP2001233486 A JP 2001233486A JP 2001233486 A JP2001233486 A JP 2001233486A JP 3775259 B2 JP3775259 B2 JP 3775259B2
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Japan
Prior art keywords
layer
type
nitride semiconductor
active layer
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2001233486A
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English (en)
Japanese (ja)
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JP2002151797A5 (enrdf_load_stackoverflow
JP2002151797A (ja
Inventor
慎一 長濱
修二 中村
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Nichia Corp
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Nichia Corp
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Priority to JP2001233486A priority Critical patent/JP3775259B2/ja
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Publication of JP2002151797A5 publication Critical patent/JP2002151797A5/ja
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  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
JP2001233486A 2001-08-01 2001-08-01 窒化物半導体レーザ素子 Expired - Lifetime JP3775259B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001233486A JP3775259B2 (ja) 2001-08-01 2001-08-01 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001233486A JP3775259B2 (ja) 2001-08-01 2001-08-01 窒化物半導体レーザ素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15781296A Division JPH1012969A (ja) 1996-06-19 1996-06-19 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2002151797A JP2002151797A (ja) 2002-05-24
JP2002151797A5 JP2002151797A5 (enrdf_load_stackoverflow) 2004-07-15
JP3775259B2 true JP3775259B2 (ja) 2006-05-17

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ID=19065255

Family Applications (1)

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JP2001233486A Expired - Lifetime JP3775259B2 (ja) 2001-08-01 2001-08-01 窒化物半導体レーザ素子

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JP (1) JP3775259B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009054616A (ja) * 2007-08-23 2009-03-12 Sharp Corp 窒化物半導体発光素子の製造方法と窒化物半導体発光層
CN116526297A (zh) * 2023-06-01 2023-08-01 安徽格恩半导体有限公司 一种具有双激子量子限域层的半导体激光器

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Publication number Publication date
JP2002151797A (ja) 2002-05-24

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