JP2002151797A5 - - Google Patents
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- Publication number
- JP2002151797A5 JP2002151797A5 JP2001233486A JP2001233486A JP2002151797A5 JP 2002151797 A5 JP2002151797 A5 JP 2002151797A5 JP 2001233486 A JP2001233486 A JP 2001233486A JP 2001233486 A JP2001233486 A JP 2001233486A JP 2002151797 A5 JP2002151797 A5 JP 2002151797A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- nitride semiconductor
- active layer
- well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 description 282
- 239000004065 semiconductor Substances 0.000 description 63
- 150000004767 nitrides Chemical class 0.000 description 59
- 239000012535 impurity Substances 0.000 description 58
- 239000010408 film Substances 0.000 description 31
- 230000004888 barrier function Effects 0.000 description 24
- 239000013078 crystal Substances 0.000 description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 239000011777 magnesium Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 230000010355 oscillation Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000005253 cladding Methods 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001233486A JP3775259B2 (ja) | 2001-08-01 | 2001-08-01 | 窒化物半導体レーザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001233486A JP3775259B2 (ja) | 2001-08-01 | 2001-08-01 | 窒化物半導体レーザ素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15781296A Division JPH1012969A (ja) | 1996-06-19 | 1996-06-19 | 窒化物半導体レーザ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002151797A JP2002151797A (ja) | 2002-05-24 |
| JP2002151797A5 true JP2002151797A5 (enrdf_load_stackoverflow) | 2004-07-15 |
| JP3775259B2 JP3775259B2 (ja) | 2006-05-17 |
Family
ID=19065255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001233486A Expired - Lifetime JP3775259B2 (ja) | 2001-08-01 | 2001-08-01 | 窒化物半導体レーザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3775259B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009054616A (ja) * | 2007-08-23 | 2009-03-12 | Sharp Corp | 窒化物半導体発光素子の製造方法と窒化物半導体発光層 |
| CN116526297A (zh) * | 2023-06-01 | 2023-08-01 | 安徽格恩半导体有限公司 | 一种具有双激子量子限域层的半导体激光器 |
-
2001
- 2001-08-01 JP JP2001233486A patent/JP3775259B2/ja not_active Expired - Lifetime
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