JP3773510B2 - 放電プラズマ処理方法および放電プラズマ処理装置 - Google Patents

放電プラズマ処理方法および放電プラズマ処理装置 Download PDF

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JP3773510B2
JP3773510B2 JP2003315932A JP2003315932A JP3773510B2 JP 3773510 B2 JP3773510 B2 JP 3773510B2 JP 2003315932 A JP2003315932 A JP 2003315932A JP 2003315932 A JP2003315932 A JP 2003315932A JP 3773510 B2 JP3773510 B2 JP 3773510B2
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discharge
voltage
plasma
electrodes
treatment
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JP2005085586A (ja
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和良 岩根
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP2003315932A 2003-09-08 2003-09-08 放電プラズマ処理方法および放電プラズマ処理装置 Expired - Fee Related JP3773510B2 (ja)

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JP2003315932A JP3773510B2 (ja) 2003-09-08 2003-09-08 放電プラズマ処理方法および放電プラズマ処理装置

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JP2003315932A JP3773510B2 (ja) 2003-09-08 2003-09-08 放電プラズマ処理方法および放電プラズマ処理装置

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JP2005085586A JP2005085586A (ja) 2005-03-31
JP2005085586A5 JP2005085586A5 (https=) 2005-07-14
JP3773510B2 true JP3773510B2 (ja) 2006-05-10

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5336691B2 (ja) * 2005-09-16 2013-11-06 国立大学法人東北大学 プラズマ発生装置、表面処理装置、光源、プラズマ発生方法、表面処理方法および光照射方法
US7914692B2 (en) * 2006-08-29 2011-03-29 Ngk Insulators, Ltd. Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding
JP6376685B2 (ja) * 2014-05-16 2018-08-22 東レエンジニアリング株式会社 薄膜形成装置および薄膜形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864030A (ja) * 1981-10-13 1983-04-16 Nec Kyushu Ltd プラズマエツチング装置
JPS63102318A (ja) * 1986-10-20 1988-05-07 Tokyo Electron Ltd プラズマエツチング方法
JPH04199816A (ja) * 1990-11-29 1992-07-21 Mitsubishi Electric Corp プラズマｃｖｄ装置
JP4378592B2 (ja) * 2000-11-13 2009-12-09 株式会社安川電機 放電発生装置の制御方法
JP2002217168A (ja) * 2001-01-15 2002-08-02 Nec Corp プラズマ処理方法

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