JP3737482B2 - 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ - Google Patents

自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ Download PDF

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JP3737482B2
JP3737482B2 JP2002555483A JP2002555483A JP3737482B2 JP 3737482 B2 JP3737482 B2 JP 3737482B2 JP 2002555483 A JP2002555483 A JP 2002555483A JP 2002555483 A JP2002555483 A JP 2002555483A JP 3737482 B2 JP3737482 B2 JP 3737482B2
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alloy
wire
pad
layer
self
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JP2004517498A5 (https=
JP2004517498A (ja
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ヨアヒム バース，ハンス
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インフィネオン テクノロジーズ ノース アメリカ コーポレイション
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01551—Changing the shapes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01571—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/925—Bond pads having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002555483A 2000-12-28 2001-11-14 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ Expired - Fee Related JP3737482B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/751,479 US6515373B2 (en) 2000-12-28 2000-12-28 Cu-pad/bonded/Cu-wire with self-passivating Cu-alloys
PCT/US2001/043960 WO2002054491A2 (en) 2000-12-28 2001-11-14 Cu-pad/bonded/cu-wire with self-passivating cu-alloys

Publications (3)

Publication Number Publication Date
JP2004517498A JP2004517498A (ja) 2004-06-10
JP2004517498A5 JP2004517498A5 (https=) 2005-04-28
JP3737482B2 true JP3737482B2 (ja) 2006-01-18

Family

ID=25022157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002555483A Expired - Fee Related JP3737482B2 (ja) 2000-12-28 2001-11-14 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ

Country Status (6)

Country Link
US (1) US6515373B2 (https=)
EP (1) EP1348235A2 (https=)
JP (1) JP3737482B2 (https=)
KR (1) KR100542120B1 (https=)
CN (1) CN1296997C (https=)
WO (1) WO2002054491A2 (https=)

Cited By (1)

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WO2016143557A1 (ja) * 2015-03-10 2016-09-15 三菱電機株式会社 パワー半導体装置

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JP3980807B2 (ja) * 2000-03-27 2007-09-26 株式会社東芝 半導体装置及び半導体モジュール
JP4868694B2 (ja) * 2000-09-18 2012-02-01 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤ
US6970939B2 (en) * 2000-10-26 2005-11-29 Intel Corporation Method and apparatus for large payload distribution in a network
US20030127716A1 (en) * 2002-01-09 2003-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under pads
US6805786B2 (en) 2002-09-24 2004-10-19 Northrop Grumman Corporation Precious alloyed metal solder plating process
US7015580B2 (en) * 2003-11-25 2006-03-21 International Business Machines Corporation Roughened bonding pad and bonding wire surfaces for low pressure wire bonding
US6897147B1 (en) 2004-01-15 2005-05-24 Taiwan Semiconductor Manufacturing Company Solution for copper hillock induced by thermal strain with buffer zone for strain relaxation
US7851358B2 (en) * 2005-05-05 2010-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Low temperature method for minimizing copper hillock defects
DE102005044510B4 (de) * 2005-09-16 2011-03-17 Infineon Technologies Ag Halbleiterbauteil mit Vorderseitenmetallisierung sowie Verfahren zu dessen Herstellung und Leistungsdiode
EP1783829A1 (en) * 2005-11-02 2007-05-09 Abb Research Ltd. Method for bonding electronic components
US7205673B1 (en) * 2005-11-18 2007-04-17 Lsi Logic Corporation Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing
US8344524B2 (en) * 2006-03-07 2013-01-01 Megica Corporation Wire bonding method for preventing polymer cracking
TWI370515B (en) 2006-09-29 2012-08-11 Megica Corp Circuit component
DE102007062787A1 (de) * 2006-12-29 2008-07-17 Qimonda Ag Kupferdrahtbonden auf organischen Lötschutzmaterialien
US7911061B2 (en) * 2007-06-25 2011-03-22 Infineon Technologies Ag Semiconductor device
US8030775B2 (en) 2007-08-27 2011-10-04 Megica Corporation Wirebond over post passivation thick metal
US20100181675A1 (en) * 2009-01-16 2010-07-22 Infineon Technologies Ag Semiconductor package with wedge bonded chip
US20100200981A1 (en) * 2009-02-09 2010-08-12 Advanced Semiconductor Engineering, Inc. Semiconductor package and method of manufacturing the same
WO2010112983A1 (en) * 2009-03-31 2010-10-07 Stmicroelectronics (Grenoble 2) Sas Wire-bonded semiconductor package with a coated wire
US8432024B2 (en) * 2010-04-27 2013-04-30 Infineon Technologies Ag Integrated circuit including bond wire directly bonded to pad
JP5213146B1 (ja) * 2012-10-03 2013-06-19 田中電子工業株式会社 半導体装置接続用銅ロジウム合金細線
EP2808873A1 (de) * 2013-05-28 2014-12-03 Nexans Elektrisch leitfähiger Draht und Verfahren zu seiner Herstellung
KR102100372B1 (ko) 2013-08-28 2020-04-14 삼성디스플레이 주식회사 유기 발광 표시 장치
CN113026009A (zh) * 2021-03-29 2021-06-25 广东禾木科技有限公司 钝化液、提高金属材料键合性能的方法、键合丝、应用

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Publication number Priority date Publication date Assignee Title
WO2016143557A1 (ja) * 2015-03-10 2016-09-15 三菱電機株式会社 パワー半導体装置
JPWO2016143557A1 (ja) * 2015-03-10 2017-05-25 三菱電機株式会社 パワー半導体装置
US20180053737A1 (en) * 2015-03-10 2018-02-22 Mitsubishi Electric Corporation Power semiconductor device

Also Published As

Publication number Publication date
US20020084311A1 (en) 2002-07-04
CN1484857A (zh) 2004-03-24
EP1348235A2 (en) 2003-10-01
US6515373B2 (en) 2003-02-04
WO2002054491A3 (en) 2003-06-05
CN1296997C (zh) 2007-01-24
KR100542120B1 (ko) 2006-01-11
KR20040018248A (ko) 2004-03-02
JP2004517498A (ja) 2004-06-10
WO2002054491A2 (en) 2002-07-11

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