JP2004517498A5 - - Google Patents
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- Publication number
- JP2004517498A5 JP2004517498A5 JP2002555483A JP2002555483A JP2004517498A5 JP 2004517498 A5 JP2004517498 A5 JP 2004517498A5 JP 2002555483 A JP2002555483 A JP 2002555483A JP 2002555483 A JP2002555483 A JP 2002555483A JP 2004517498 A5 JP2004517498 A5 JP 2004517498A5
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- wire
- pad
- layer
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 claims 18
- 229910000881 Cu alloy Inorganic materials 0.000 claims 14
- 238000000034 method Methods 0.000 claims 8
- 238000002161 passivation Methods 0.000 claims 5
- 238000000137 annealing Methods 0.000 claims 4
- 229910017767 Cu—Al Inorganic materials 0.000 claims 3
- 239000002019 doping agent Substances 0.000 claims 3
- 229910017539 Cu-Li Inorganic materials 0.000 claims 2
- 229910017818 Cu—Mg Inorganic materials 0.000 claims 2
- 239000004642 Polyimide Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- -1 nitride compound Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/751,479 US6515373B2 (en) | 2000-12-28 | 2000-12-28 | Cu-pad/bonded/Cu-wire with self-passivating Cu-alloys |
| PCT/US2001/043960 WO2002054491A2 (en) | 2000-12-28 | 2001-11-14 | Cu-pad/bonded/cu-wire with self-passivating cu-alloys |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004517498A JP2004517498A (ja) | 2004-06-10 |
| JP2004517498A5 true JP2004517498A5 (https=) | 2005-04-28 |
| JP3737482B2 JP3737482B2 (ja) | 2006-01-18 |
Family
ID=25022157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002555483A Expired - Fee Related JP3737482B2 (ja) | 2000-12-28 | 2001-11-14 | 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6515373B2 (https=) |
| EP (1) | EP1348235A2 (https=) |
| JP (1) | JP3737482B2 (https=) |
| KR (1) | KR100542120B1 (https=) |
| CN (1) | CN1296997C (https=) |
| WO (1) | WO2002054491A2 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3980807B2 (ja) * | 2000-03-27 | 2007-09-26 | 株式会社東芝 | 半導体装置及び半導体モジュール |
| JP4868694B2 (ja) * | 2000-09-18 | 2012-02-01 | 新日鉄マテリアルズ株式会社 | 半導体用ボンディングワイヤ |
| US6970939B2 (en) * | 2000-10-26 | 2005-11-29 | Intel Corporation | Method and apparatus for large payload distribution in a network |
| US20030127716A1 (en) * | 2002-01-09 | 2003-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under pads |
| US6805786B2 (en) | 2002-09-24 | 2004-10-19 | Northrop Grumman Corporation | Precious alloyed metal solder plating process |
| US7015580B2 (en) * | 2003-11-25 | 2006-03-21 | International Business Machines Corporation | Roughened bonding pad and bonding wire surfaces for low pressure wire bonding |
| US6897147B1 (en) | 2004-01-15 | 2005-05-24 | Taiwan Semiconductor Manufacturing Company | Solution for copper hillock induced by thermal strain with buffer zone for strain relaxation |
| US7851358B2 (en) * | 2005-05-05 | 2010-12-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low temperature method for minimizing copper hillock defects |
| DE102005044510B4 (de) * | 2005-09-16 | 2011-03-17 | Infineon Technologies Ag | Halbleiterbauteil mit Vorderseitenmetallisierung sowie Verfahren zu dessen Herstellung und Leistungsdiode |
| EP1783829A1 (en) * | 2005-11-02 | 2007-05-09 | Abb Research Ltd. | Method for bonding electronic components |
| US7205673B1 (en) * | 2005-11-18 | 2007-04-17 | Lsi Logic Corporation | Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing |
| US8344524B2 (en) * | 2006-03-07 | 2013-01-01 | Megica Corporation | Wire bonding method for preventing polymer cracking |
| TWI370515B (en) | 2006-09-29 | 2012-08-11 | Megica Corp | Circuit component |
| DE102007062787A1 (de) * | 2006-12-29 | 2008-07-17 | Qimonda Ag | Kupferdrahtbonden auf organischen Lötschutzmaterialien |
| US7911061B2 (en) * | 2007-06-25 | 2011-03-22 | Infineon Technologies Ag | Semiconductor device |
| US8030775B2 (en) | 2007-08-27 | 2011-10-04 | Megica Corporation | Wirebond over post passivation thick metal |
| US20100181675A1 (en) * | 2009-01-16 | 2010-07-22 | Infineon Technologies Ag | Semiconductor package with wedge bonded chip |
| US20100200981A1 (en) * | 2009-02-09 | 2010-08-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and method of manufacturing the same |
| WO2010112983A1 (en) * | 2009-03-31 | 2010-10-07 | Stmicroelectronics (Grenoble 2) Sas | Wire-bonded semiconductor package with a coated wire |
| US8432024B2 (en) * | 2010-04-27 | 2013-04-30 | Infineon Technologies Ag | Integrated circuit including bond wire directly bonded to pad |
| JP5213146B1 (ja) * | 2012-10-03 | 2013-06-19 | 田中電子工業株式会社 | 半導体装置接続用銅ロジウム合金細線 |
| EP2808873A1 (de) * | 2013-05-28 | 2014-12-03 | Nexans | Elektrisch leitfähiger Draht und Verfahren zu seiner Herstellung |
| KR102100372B1 (ko) | 2013-08-28 | 2020-04-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| WO2016143557A1 (ja) * | 2015-03-10 | 2016-09-15 | 三菱電機株式会社 | パワー半導体装置 |
| CN113026009A (zh) * | 2021-03-29 | 2021-06-25 | 广东禾木科技有限公司 | 钝化液、提高金属材料键合性能的方法、键合丝、应用 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761386A (en) * | 1984-10-22 | 1988-08-02 | National Semiconductor Corporation | Method of fabricating conductive non-metallic self-passivating non-corrodable IC bonding pads |
| US4676827A (en) * | 1985-03-27 | 1987-06-30 | Mitsubishi Kinzoku Kabushiki Kaisha | Wire for bonding a semiconductor device and process for producing the same |
| US5134460A (en) * | 1986-08-11 | 1992-07-28 | International Business Machines Corporation | Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding |
| JP2659714B2 (ja) * | 1987-07-21 | 1997-09-30 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPH04164332A (ja) * | 1990-10-29 | 1992-06-10 | Matsushita Electron Corp | 半導体装置 |
| US5371654A (en) * | 1992-10-19 | 1994-12-06 | International Business Machines Corporation | Three dimensional high performance interconnection package |
| US5622608A (en) * | 1994-05-05 | 1997-04-22 | Research Foundation Of State University Of New York | Process of making oxidation resistant high conductivity copper layers |
| US5766379A (en) * | 1995-06-07 | 1998-06-16 | The Research Foundation Of State University Of New York | Passivated copper conductive layers for microelectronic applications and methods of manufacturing same |
| DE69637333T2 (de) * | 1995-06-27 | 2008-10-02 | International Business Machines Corp. | Kupferlegierungen für Chipverbindungen und Herstellungsverfahren |
| US6037257A (en) * | 1997-05-08 | 2000-03-14 | Applied Materials, Inc. | Sputter deposition and annealing of copper alloy metallization |
| US6387805B2 (en) * | 1997-05-08 | 2002-05-14 | Applied Materials, Inc. | Copper alloy seed layer for copper metallization |
| US6249055B1 (en) * | 1998-02-03 | 2001-06-19 | Advanced Micro Devices, Inc. | Self-encapsulated copper metallization |
| US6153521A (en) * | 1998-06-04 | 2000-11-28 | Advanced Micro Devices, Inc. | Metallized interconnection structure and method of making the same |
| WO2000005747A2 (en) * | 1998-06-30 | 2000-02-03 | Semitool, Inc. | Metallization structures for microelectronic applications and process for forming the structures |
| US6218302B1 (en) * | 1998-07-21 | 2001-04-17 | Motorola Inc. | Method for forming a semiconductor device |
| US6281127B1 (en) * | 1999-04-15 | 2001-08-28 | Taiwan Semiconductor Manufacturing Company | Self-passivation procedure for a copper damascene structure |
| US6329722B1 (en) * | 1999-07-01 | 2001-12-11 | Texas Instruments Incorporated | Bonding pads for integrated circuits having copper interconnect metallization |
| US6339022B1 (en) * | 1999-12-30 | 2002-01-15 | International Business Machines Corporation | Method of annealing copper metallurgy |
-
2000
- 2000-12-28 US US09/751,479 patent/US6515373B2/en not_active Expired - Lifetime
-
2001
- 2001-11-14 WO PCT/US2001/043960 patent/WO2002054491A2/en not_active Ceased
- 2001-11-14 JP JP2002555483A patent/JP3737482B2/ja not_active Expired - Fee Related
- 2001-11-14 KR KR1020037008825A patent/KR100542120B1/ko not_active Expired - Fee Related
- 2001-11-14 EP EP01987076A patent/EP1348235A2/en not_active Withdrawn
- 2001-11-14 CN CNB018216528A patent/CN1296997C/zh not_active Expired - Fee Related
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