JP3732477B2 - 画素回路、発光装置および電子機器 - Google Patents
画素回路、発光装置および電子機器 Download PDFInfo
- Publication number
- JP3732477B2 JP3732477B2 JP2002310562A JP2002310562A JP3732477B2 JP 3732477 B2 JP3732477 B2 JP 3732477B2 JP 2002310562 A JP2002310562 A JP 2002310562A JP 2002310562 A JP2002310562 A JP 2002310562A JP 3732477 B2 JP3732477 B2 JP 3732477B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- electrode
- electrically connected
- source
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims description 176
- 239000000758 substrate Substances 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 description 363
- 239000010410 layer Substances 0.000 description 196
- 238000000034 method Methods 0.000 description 104
- 238000005401 electroluminescence Methods 0.000 description 100
- 229910052581 Si3N4 Inorganic materials 0.000 description 75
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 75
- 239000011229 interlayer Substances 0.000 description 68
- 239000012535 impurity Substances 0.000 description 61
- 239000000463 material Substances 0.000 description 56
- 238000010586 diagram Methods 0.000 description 42
- 239000004065 semiconductor Substances 0.000 description 36
- 238000005070 sampling Methods 0.000 description 30
- 238000002347 injection Methods 0.000 description 27
- 239000007924 injection Substances 0.000 description 27
- 230000008569 process Effects 0.000 description 27
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 20
- 238000012937 correction Methods 0.000 description 19
- 239000000126 substance Substances 0.000 description 16
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 15
- 230000005525 hole transport Effects 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000000137 annealing Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000011282 treatment Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000014509 gene expression Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910003437 indium oxide Inorganic materials 0.000 description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 238000005984 hydrogenation reaction Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 6
- 238000001994 activation Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000005001 laminate film Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Shift Register Type Memory (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002310562A JP3732477B2 (ja) | 2001-10-26 | 2002-10-25 | 画素回路、発光装置および電子機器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-330050 | 2001-10-26 | ||
| JP2001330050 | 2001-10-26 | ||
| JP2002310562A JP3732477B2 (ja) | 2001-10-26 | 2002-10-25 | 画素回路、発光装置および電子機器 |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005064611A Division JP4044568B2 (ja) | 2001-10-26 | 2005-03-08 | 画素回路、発光装置及び半導体装置 |
| JP2005222590A Division JP2005352511A (ja) | 2001-10-26 | 2005-08-01 | 半導体回路及び電子機器 |
| JP2005268492A Division JP2006072376A (ja) | 2001-10-26 | 2005-09-15 | 画素回路、発光装置、及び電子機器 |
| JP2005276988A Division JP4044582B2 (ja) | 2001-10-26 | 2005-09-26 | 画素回路、発光装置、半導体装置及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003223138A JP2003223138A (ja) | 2003-08-08 |
| JP2003223138A5 JP2003223138A5 (enExample) | 2005-09-02 |
| JP3732477B2 true JP3732477B2 (ja) | 2006-01-05 |
Family
ID=27759052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002310562A Expired - Fee Related JP3732477B2 (ja) | 2001-10-26 | 2002-10-25 | 画素回路、発光装置および電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3732477B2 (enExample) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003195809A (ja) * | 2001-12-28 | 2003-07-09 | Matsushita Electric Ind Co Ltd | El表示装置とその駆動方法および情報表示装置 |
| KR100490622B1 (ko) | 2003-01-21 | 2005-05-17 | 삼성에스디아이 주식회사 | 유기 전계발광 표시장치 및 그 구동방법과 픽셀회로 |
| JP4062179B2 (ja) * | 2003-06-04 | 2008-03-19 | ソニー株式会社 | 画素回路、表示装置、および画素回路の駆動方法 |
| KR100560780B1 (ko) | 2003-07-07 | 2006-03-13 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치의 화소회로 및 그의 구동방법 |
| JP4059177B2 (ja) * | 2003-09-17 | 2008-03-12 | セイコーエプソン株式会社 | 電子回路、その駆動方法、電気光学装置および電子機器 |
| JP2005099247A (ja) * | 2003-09-24 | 2005-04-14 | Toppoly Optoelectronics Corp | 閾値電圧補償を有するアクティブマトリックス有機発光ダイオードの画素駆動回路およびその駆動方法。 |
| JP5078223B2 (ja) * | 2003-09-30 | 2012-11-21 | 三洋電機株式会社 | 有機el画素回路 |
| KR100599726B1 (ko) | 2003-11-27 | 2006-07-12 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 표시 패널과 구동 방법 |
| KR100536235B1 (ko) * | 2003-11-24 | 2005-12-12 | 삼성에스디아이 주식회사 | 화상 표시 장치 및 그 구동 방법 |
| JP4297438B2 (ja) | 2003-11-24 | 2009-07-15 | 三星モバイルディスプレイ株式會社 | 発光表示装置,表示パネル,及び発光表示装置の駆動方法 |
| JP4547900B2 (ja) * | 2003-12-02 | 2010-09-22 | ソニー株式会社 | 画素回路及びその駆動方法とアクティブマトリクス装置並びに表示装置 |
| JP4826870B2 (ja) * | 2003-12-02 | 2011-11-30 | ソニー株式会社 | 画素回路及びその駆動方法とアクティブマトリクス装置並びに表示装置 |
| JP4552108B2 (ja) * | 2003-12-05 | 2010-09-29 | ソニー株式会社 | 画素回路及び表示装置とこれらの駆動方法 |
| JP4501059B2 (ja) * | 2003-12-26 | 2010-07-14 | ソニー株式会社 | 画素回路及び表示装置 |
| GB0400213D0 (en) * | 2004-01-07 | 2004-02-11 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
| JP4884674B2 (ja) * | 2004-01-16 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP5121124B2 (ja) * | 2005-03-28 | 2013-01-16 | 三洋電機株式会社 | 有機el画素回路 |
| JP5370454B2 (ja) * | 2004-04-12 | 2013-12-18 | 三洋電機株式会社 | 有機el画素回路およびその駆動方法 |
| JP4974471B2 (ja) * | 2004-04-12 | 2012-07-11 | 三洋電機株式会社 | 有機el画素回路およびその駆動方法 |
| JP4999281B2 (ja) * | 2005-03-28 | 2012-08-15 | 三洋電機株式会社 | 有機el画素回路 |
| JP4036209B2 (ja) | 2004-04-22 | 2008-01-23 | セイコーエプソン株式会社 | 電子回路、その駆動方法、電気光学装置および電子機器 |
| JP4033166B2 (ja) * | 2004-04-22 | 2008-01-16 | セイコーエプソン株式会社 | 電子回路、その駆動方法、電気光学装置および電子機器 |
| ATE512500T1 (de) * | 2004-04-26 | 2011-06-15 | Polymer Vision Ltd | Schwellenspannungseinstellung in dünnfilm- transistoren |
| KR100589324B1 (ko) * | 2004-05-11 | 2006-06-14 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 구동 방법 |
| JP4855652B2 (ja) * | 2004-05-17 | 2012-01-18 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 表示装置 |
| JP4393980B2 (ja) * | 2004-06-14 | 2010-01-06 | シャープ株式会社 | 表示装置 |
| KR101080351B1 (ko) * | 2004-06-22 | 2011-11-04 | 삼성전자주식회사 | 표시 장치 및 그 구동 방법 |
| JP4645881B2 (ja) * | 2004-07-08 | 2011-03-09 | ソニー株式会社 | 画素回路及、アクティブマトリクス装置及び表示装置 |
| KR100592641B1 (ko) * | 2004-07-28 | 2006-06-26 | 삼성에스디아이 주식회사 | 화소 회로 및 그것을 채용한 유기 발광 표시 장치 |
| JP4942971B2 (ja) * | 2004-09-24 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 発光装置の駆動方法 |
| US20060076567A1 (en) | 2004-09-24 | 2006-04-13 | Keisuke Miyagawa | Driving method of light emitting device |
| JP4364849B2 (ja) * | 2004-11-22 | 2009-11-18 | 三星モバイルディスプレイ株式會社 | 発光表示装置 |
| KR100604061B1 (ko) * | 2004-12-09 | 2006-07-24 | 삼성에스디아이 주식회사 | 화소회로 및 발광 표시장치 |
| KR100624317B1 (ko) | 2004-12-24 | 2006-09-19 | 삼성에스디아이 주식회사 | 주사 구동부 및 이를 이용한 발광 표시장치와 그의 구동방법 |
| KR100637203B1 (ko) | 2005-01-07 | 2006-10-23 | 삼성에스디아이 주식회사 | 유기 전계발광 표시장치 및 그 동작방법 |
| KR101152119B1 (ko) | 2005-02-07 | 2012-06-15 | 삼성전자주식회사 | 표시 장치 및 그 구동 방법 |
| KR100645700B1 (ko) * | 2005-04-28 | 2006-11-14 | 삼성에스디아이 주식회사 | 주사 구동부 및 이를 이용한 발광 표시장치와 그의 구동방법 |
| CA2518276A1 (en) * | 2005-09-13 | 2007-03-13 | Ignis Innovation Inc. | Compensation technique for luminance degradation in electro-luminance devices |
| JP5013697B2 (ja) | 2005-10-19 | 2012-08-29 | 三洋電機株式会社 | 表示装置 |
| US8154483B2 (en) * | 2005-11-28 | 2012-04-10 | Lg Display Co., Ltd. | Image display apparatus and driving method thereof |
| WO2007108149A1 (ja) * | 2006-03-20 | 2007-09-27 | Sharp Kabushiki Kaisha | 表示装置及びその駆動方法 |
| EP2026318B1 (en) * | 2006-05-30 | 2014-08-20 | Sharp Kabushiki Kaisha | Electric current driving display device |
| JP2009244665A (ja) | 2008-03-31 | 2009-10-22 | Sony Corp | パネルおよび駆動制御方法 |
| JP2009258227A (ja) * | 2008-04-14 | 2009-11-05 | Toshiba Mobile Display Co Ltd | El表示装置 |
| JP5449733B2 (ja) * | 2008-09-30 | 2014-03-19 | エルジー ディスプレイ カンパニー リミテッド | 画像表示装置及び画像表示装置の駆動方法 |
| JP5933160B2 (ja) * | 2008-12-04 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器及び移動体 |
| US9741309B2 (en) | 2009-01-22 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving display device including first to fourth switches |
| JP5320270B2 (ja) * | 2009-11-25 | 2013-10-23 | 株式会社沖データ | 表示パネルの製造方法 |
| KR101199106B1 (ko) * | 2010-03-17 | 2012-11-09 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
| US8710505B2 (en) | 2011-08-05 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE112012004996T5 (de) | 2011-11-30 | 2014-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
| US10043794B2 (en) | 2012-03-22 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| TWI696990B (zh) * | 2017-02-22 | 2020-06-21 | 大陸商昆山國顯光電有限公司 | 像素驅動電路及其驅動方法和電晶體的版圖結構 |
| JP2019061286A (ja) * | 2019-01-11 | 2019-04-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
-
2002
- 2002-10-25 JP JP2002310562A patent/JP3732477B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003223138A (ja) | 2003-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3732477B2 (ja) | 画素回路、発光装置および電子機器 | |
| JP6736599B2 (ja) | 表示装置 | |
| JP6223523B2 (ja) | 発光装置 | |
| JP5973025B2 (ja) | 表示装置、表示モジュール及び電子機器 | |
| JP2003202834A (ja) | 半導体装置およびその駆動方法 | |
| JP4472743B2 (ja) | 半導体装置及び電子機器 | |
| JP4044568B2 (ja) | 画素回路、発光装置及び半導体装置 | |
| JP4044582B2 (ja) | 画素回路、発光装置、半導体装置及び電子機器 | |
| JP2007122072A (ja) | 表示装置 | |
| JP2005352511A (ja) | 半導体回路及び電子機器 | |
| JP2006072376A (ja) | 画素回路、発光装置、及び電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050308 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050308 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20050308 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20050406 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050426 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050627 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050726 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050913 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20051011 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20051012 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 3732477 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081021 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091021 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091021 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091021 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101021 Year of fee payment: 5 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101021 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111021 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111021 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121021 Year of fee payment: 7 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121021 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131021 Year of fee payment: 8 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |