JP3701700B2 - Ｓｉ−Ｏ含有皮膜の形成方法 - Google Patents

Ｓｉ−Ｏ含有皮膜の形成方法 Download PDF

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Publication number
JP3701700B2
JP3701700B2 JP22328994A JP22328994A JP3701700B2 JP 3701700 B2 JP3701700 B2 JP 3701700B2 JP 22328994 A JP22328994 A JP 22328994A JP 22328994 A JP22328994 A JP 22328994A JP 3701700 B2 JP3701700 B2 JP 3701700B2
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JP
Japan
Prior art keywords
resin
film
coating
hydrogen gas
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP22328994A
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English (en)
Japanese (ja)
Other versions
JPH07187640A (ja
Inventor
スティーブン バランス デビッド
チャールズ カミレッティ ロバート
カイ ダン ダイアナ
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Dow Silicones Corp
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Dow Corning Corp
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Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of JPH07187640A publication Critical patent/JPH07187640A/ja
Application granted granted Critical
Publication of JP3701700B2 publication Critical patent/JP3701700B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H10P95/08—
    • H10P14/6529—
    • H10P14/6925—
    • H10P14/6342—
    • H10P14/6686—
    • H10P14/6922—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paper (AREA)
JP22328994A 1993-09-22 1994-09-19 Ｓｉ−Ｏ含有皮膜の形成方法 Expired - Fee Related JP3701700B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/124,529 US5441765A (en) 1993-09-22 1993-09-22 Method of forming Si-O containing coatings
US124529 2002-04-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005145409A Division JP2005320239A (ja) 1993-09-22 2005-05-18 Ｓｉ−Ｏ含有セラミック皮膜の誘電率を安定化させる方法

Publications (2)

Publication Number Publication Date
JPH07187640A JPH07187640A (ja) 1995-07-25
JP3701700B2 true JP3701700B2 (ja) 2005-10-05

Family

ID=22415405

Family Applications (2)

Application Number Title Priority Date Filing Date
JP22328994A Expired - Fee Related JP3701700B2 (ja) 1993-09-22 1994-09-19 Ｓｉ−Ｏ含有皮膜の形成方法
JP2005145409A Pending JP2005320239A (ja) 1993-09-22 2005-05-18 Ｓｉ−Ｏ含有セラミック皮膜の誘電率を安定化させる方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005145409A Pending JP2005320239A (ja) 1993-09-22 2005-05-18 Ｓｉ−Ｏ含有セラミック皮膜の誘電率を安定化させる方法

Country Status (7)

Country Link
US (2) US5441765A (esLanguage)
EP (1) EP0647965B1 (esLanguage)
JP (2) JP3701700B2 (esLanguage)
KR (1) KR100300801B1 (esLanguage)
CA (1) CA2117593A1 (esLanguage)
DE (1) DE69416767T2 (esLanguage)
TW (1) TW297786B (esLanguage)

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US5534731A (en) * 1994-10-28 1996-07-09 Advanced Micro Devices, Incorporated Layered low dielectric constant technology
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5656555A (en) * 1995-02-17 1997-08-12 Texas Instruments Incorporated Modified hydrogen silsesquioxane spin-on glass
US6652922B1 (en) 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
JP3760493B2 (ja) * 1995-09-21 2006-03-29 東亞合成株式会社 固体状シリカ誘導体およびその製造方法
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
KR100202231B1 (ko) * 1996-04-08 1999-06-15 구자홍 액정표시장치의 제조방법 및 액정표시장치의 구조
TW408192B (en) * 1996-10-02 2000-10-11 Winbond Electronics Corp Method for forming a film over a spin-on-glass layer by means of plasma-enhanced chemical-vapor deposition
US5973385A (en) * 1996-10-24 1999-10-26 International Business Machines Corporation Method for suppressing pattern distortion associated with BPSG reflow and integrated circuit chip formed thereby
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6143855A (en) 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
US5866945A (en) * 1997-10-16 1999-02-02 Advanced Micro Devices Borderless vias with HSQ gap filled patterned metal layers
US6018002A (en) * 1998-02-06 2000-01-25 Dow Corning Corporation Photoluminescent material from hydrogen silsesquioxane resin
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6420278B1 (en) * 1998-06-12 2002-07-16 Advanced Micro Devices, Inc. Method for improving the dielectric constant of silicon-based semiconductor materials
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
US6231989B1 (en) 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
US6436824B1 (en) 1999-07-02 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Low dielectric constant materials for copper damascene
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US7011868B2 (en) * 2000-03-20 2006-03-14 Axcelis Technologies, Inc. Fluorine-free plasma curing process for porous low-k materials
US6913796B2 (en) * 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
WO2002031596A1 (en) 2000-10-12 2002-04-18 University Of North Carolina At Chapel Hill Co2-processes photoresists, polymers, and photoactive compounds for microlithography
JP3913638B2 (ja) * 2001-09-03 2007-05-09 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US7368804B2 (en) * 2003-05-16 2008-05-06 Infineon Technologies Ag Method and apparatus of stress relief in semiconductor structures
CN100355813C (zh) * 2003-05-23 2007-12-19 陶氏康宁公司 具有高的湿蚀刻速率的硅氧烷树脂型抗反射涂料组合物
US7151315B2 (en) * 2003-06-11 2006-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of a non-metal barrier copper damascene integration
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US7833696B2 (en) 2004-12-17 2010-11-16 Dow Corning Corporation Method for forming anti-reflective coating
KR101324052B1 (ko) 2006-02-13 2013-11-01 다우 코닝 코포레이션 반사방지 코팅 재료
EP2240534B1 (en) 2008-01-08 2013-01-23 Dow Corning Toray Co., Ltd. Silsesquioxane resins
WO2009091440A1 (en) * 2008-01-15 2009-07-23 Dow Corning Corporation Silsesquioxane resins
CN101990551B (zh) * 2008-03-04 2012-10-03 陶氏康宁公司 倍半硅氧烷树脂
KR101541939B1 (ko) * 2008-03-05 2015-08-04 다우 코닝 코포레이션 실세스퀴옥산 수지
WO2010068336A1 (en) 2008-12-10 2010-06-17 Dow Corning Corporation Silsesquioxane resins
EP2376584B1 (en) * 2008-12-10 2014-07-16 Dow Corning Corporation Wet-etchable antireflective coatings
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
TWI521248B (zh) 2014-08-07 2016-02-11 光興國際股份有限公司 光學收發器
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US3943014A (en) * 1974-02-07 1976-03-09 Sanken Electric Company Limited Process for the fabrication of silicon transistors with high DC current gain
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4999397A (en) * 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
US5010159A (en) * 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
CA2027031A1 (en) * 1989-10-18 1991-04-19 Loren A. Haluska Hermetic substrate coatings in an inert gas atmosphere
US5063267A (en) * 1990-11-28 1991-11-05 Dow Corning Corporation Hydrogen silsesquioxane resin fractions and their use as coating materials
DE4323814A1 (de) * 1992-09-25 1994-03-31 Siemens Ag MIS-Feldeffekttransistor
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
US5320868A (en) * 1993-09-13 1994-06-14 Dow Corning Corporation Method of forming SI-O containing coatings
US5468561A (en) * 1993-11-05 1995-11-21 Texas Instruments Incorporated Etching and patterning an amorphous copolymer made from tetrafluoroethylene and 2,2-bis(trifluoromethyl)-4,5-difluoro-1,3-dioxole (TFE AF)
US5471093A (en) * 1994-10-28 1995-11-28 Advanced Micro Devices, Inc. Pseudo-low dielectric constant technology

Also Published As

Publication number Publication date
KR100300801B1 (ko) 2001-10-22
KR950008433A (ko) 1995-04-17
DE69416767T2 (de) 1999-11-11
JP2005320239A (ja) 2005-11-17
JPH07187640A (ja) 1995-07-25
DE69416767D1 (de) 1999-04-08
US5441765A (en) 1995-08-15
EP0647965A1 (en) 1995-04-12
TW297786B (esLanguage) 1997-02-11
CA2117593A1 (en) 1995-03-23
EP0647965B1 (en) 1999-03-03
US5523163A (en) 1996-06-04

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