JP3686647B2 - プラズマ表面処理装置の電極構造 - Google Patents

プラズマ表面処理装置の電極構造 Download PDF

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Publication number
JP3686647B2
JP3686647B2 JP2002294125A JP2002294125A JP3686647B2 JP 3686647 B2 JP3686647 B2 JP 3686647B2 JP 2002294125 A JP2002294125 A JP 2002294125A JP 2002294125 A JP2002294125 A JP 2002294125A JP 3686647 B2 JP3686647 B2 JP 3686647B2
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Japan
Prior art keywords
electrode
dielectric
gas
case
surface treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2002294125A
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English (en)
Japanese (ja)
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JP2004128417A (ja
JP2004128417A5 (enExample
Inventor
裕也 北畠
勇司 江口
節男 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002294125A priority Critical patent/JP3686647B2/ja
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to EP03748739A priority patent/EP1475824A4/en
Priority to TW092127816A priority patent/TWI247353B/zh
Priority to US10/500,317 priority patent/US7819081B2/en
Priority to CA002471987A priority patent/CA2471987C/en
Priority to PCT/JP2003/012821 priority patent/WO2004032214A1/ja
Priority to KR1020047010440A priority patent/KR100552378B1/ko
Priority to KR1020057018940A priority patent/KR20050103251A/ko
Priority to TW094119296A priority patent/TW200534387A/zh
Publication of JP2004128417A publication Critical patent/JP2004128417A/ja
Publication of JP2004128417A5 publication Critical patent/JP2004128417A5/ja
Application granted granted Critical
Publication of JP3686647B2 publication Critical patent/JP3686647B2/ja
Priority to US11/272,157 priority patent/US20060096539A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP2002294125A 2002-10-07 2002-10-07 プラズマ表面処理装置の電極構造 Expired - Fee Related JP3686647B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2002294125A JP3686647B2 (ja) 2002-10-07 2002-10-07 プラズマ表面処理装置の電極構造
TW094119296A TW200534387A (en) 2002-10-07 2003-10-07 Plasma film forming system
US10/500,317 US7819081B2 (en) 2002-10-07 2003-10-07 Plasma film forming system
CA002471987A CA2471987C (en) 2002-10-07 2003-10-07 Plasma surface processing apparatus
PCT/JP2003/012821 WO2004032214A1 (ja) 2002-10-07 2003-10-07 プラズマ成膜装置
KR1020047010440A KR100552378B1 (ko) 2002-10-07 2003-10-07 플라즈마 표면 처리 장치의 전극 구조
EP03748739A EP1475824A4 (en) 2002-10-07 2003-10-07 PLASMA FILM FORMATION SYSTEM
TW092127816A TWI247353B (en) 2002-10-07 2003-10-07 Plasma film forming system
KR1020057018940A KR20050103251A (ko) 2002-10-07 2003-10-07 플라즈마 표면 처리 장치
US11/272,157 US20060096539A1 (en) 2002-10-07 2005-11-10 Plasma film forming system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002294125A JP3686647B2 (ja) 2002-10-07 2002-10-07 プラズマ表面処理装置の電極構造

Related Child Applications (1)

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JP2005000826A Division JP4361495B2 (ja) 2005-01-05 2005-01-05 プラズマ表面処理装置の電極構造

Publications (3)

Publication Number Publication Date
JP2004128417A JP2004128417A (ja) 2004-04-22
JP2004128417A5 JP2004128417A5 (enExample) 2005-08-11
JP3686647B2 true JP3686647B2 (ja) 2005-08-24

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Family Applications (1)

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JP2002294125A Expired - Fee Related JP3686647B2 (ja) 2002-10-07 2002-10-07 プラズマ表面処理装置の電極構造

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JP (1) JP3686647B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4650883B2 (ja) * 2004-08-27 2011-03-16 積水化学工業株式会社 プラズマ成膜方法及びプラズマ成膜装置
CN101023713B (zh) * 2004-09-29 2010-09-29 积水化学工业株式会社 等离子加工设备
JP4551290B2 (ja) * 2005-07-22 2010-09-22 積水化学工業株式会社 撥水化用常圧プラズマ処理装置
JP4574387B2 (ja) * 2005-02-21 2010-11-04 積水化学工業株式会社 プラズマ処理装置
JP5500097B2 (ja) * 2011-02-22 2014-05-21 パナソニック株式会社 誘導結合型プラズマ処理装置及び方法
CN103766000B (zh) * 2011-06-03 2018-04-10 株式会社和广武 Cvd装置以及cvd膜的制造方法
WO2013035375A1 (ja) * 2011-09-09 2013-03-14 東芝三菱電機産業システム株式会社 プラズマ発生装置およびｃｖｄ装置
KR102070400B1 (ko) * 2012-06-29 2020-01-28 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법

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JP2004128417A (ja) 2004-04-22

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