JP3667136B2 - 高周波電力増幅器モジュール - Google Patents

高周波電力増幅器モジュール Download PDF

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Publication number
JP3667136B2
JP3667136B2 JP04104599A JP4104599A JP3667136B2 JP 3667136 B2 JP3667136 B2 JP 3667136B2 JP 04104599 A JP04104599 A JP 04104599A JP 4104599 A JP4104599 A JP 4104599A JP 3667136 B2 JP3667136 B2 JP 3667136B2
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JP
Japan
Prior art keywords
transistor
input terminal
power amplifier
amplifier module
output terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04104599A
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English (en)
Japanese (ja)
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JP2000243779A5 (enExample
JP2000243779A (ja
Inventor
修 加賀谷
健治 関根
英一 長谷
喜市 山下
静雄 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP04104599A priority Critical patent/JP3667136B2/ja
Priority to TW088110698A priority patent/TW473882B/zh
Priority to US09/345,505 priority patent/US6330165B1/en
Priority to DE69935182T priority patent/DE69935182T2/de
Priority to EP99112588A priority patent/EP0971411B1/en
Priority to EP06027122A priority patent/EP1770777A3/en
Publication of JP2000243779A publication Critical patent/JP2000243779A/ja
Priority to US09/970,668 priority patent/US6489680B2/en
Priority to US10/291,840 priority patent/US6943441B2/en
Publication of JP2000243779A5 publication Critical patent/JP2000243779A5/ja
Application granted granted Critical
Publication of JP3667136B2 publication Critical patent/JP3667136B2/ja
Priority to US11/194,701 priority patent/US7068521B2/en
Priority to US11/451,579 priority patent/US20070001300A1/en
Priority to US11/905,421 priority patent/US7525813B2/en
Priority to US12/394,421 priority patent/US7817437B2/en
Priority to US12/787,154 priority patent/US8295057B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/3025Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
JP04104599A 1998-07-06 1999-02-19 高周波電力増幅器モジュール Expired - Fee Related JP3667136B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP04104599A JP3667136B2 (ja) 1999-02-19 1999-02-19 高周波電力増幅器モジュール
TW088110698A TW473882B (en) 1998-07-06 1999-06-25 Semiconductor device
DE69935182T DE69935182T2 (de) 1998-07-06 1999-07-01 Halbleiteranordnung
EP99112588A EP0971411B1 (en) 1998-07-06 1999-07-01 Semiconductor device
EP06027122A EP1770777A3 (en) 1998-07-06 1999-07-01 Semiconductor device with a shielding bond wire
US09/345,505 US6330165B1 (en) 1998-07-06 1999-07-01 Semiconductor device
US09/970,668 US6489680B2 (en) 1998-07-06 2001-10-05 Semiconductor device
US10/291,840 US6943441B2 (en) 1998-07-06 2002-11-12 Semiconductor device
US11/194,701 US7068521B2 (en) 1998-07-06 2005-08-02 Semiconductor device
US11/451,579 US20070001300A1 (en) 1998-07-06 2006-06-13 Semiconductor device
US11/905,421 US7525813B2 (en) 1998-07-06 2007-10-01 Semiconductor device
US12/394,421 US7817437B2 (en) 1998-07-06 2009-02-27 Semiconductor device
US12/787,154 US8295057B2 (en) 1998-07-06 2010-05-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04104599A JP3667136B2 (ja) 1999-02-19 1999-02-19 高周波電力増幅器モジュール

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004150427A Division JP4153898B2 (ja) 2004-05-20 2004-05-20 高周波電力増幅器モジュール

Publications (3)

Publication Number Publication Date
JP2000243779A JP2000243779A (ja) 2000-09-08
JP2000243779A5 JP2000243779A5 (enExample) 2005-04-07
JP3667136B2 true JP3667136B2 (ja) 2005-07-06

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Application Number Title Priority Date Filing Date
JP04104599A Expired - Fee Related JP3667136B2 (ja) 1998-07-06 1999-02-19 高周波電力増幅器モジュール

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JP (1) JP3667136B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093419A (ja) * 2004-09-24 2006-04-06 Oki Electric Ind Co Ltd 半導体装置及びその実装方法

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