JP3661291B2 - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP3661291B2
JP3661291B2 JP21919396A JP21919396A JP3661291B2 JP 3661291 B2 JP3661291 B2 JP 3661291B2 JP 21919396 A JP21919396 A JP 21919396A JP 21919396 A JP21919396 A JP 21919396A JP 3661291 B2 JP3661291 B2 JP 3661291B2
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JP
Japan
Prior art keywords
exposure
temperature
temperature control
reference mark
movable mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21919396A
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English (en)
Japanese (ja)
Other versions
JPH1050588A (ja
JPH1050588A5 (enExample
Inventor
正洋 根井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP21919396A priority Critical patent/JP3661291B2/ja
Priority to US08/904,435 priority patent/US5864386A/en
Publication of JPH1050588A publication Critical patent/JPH1050588A/ja
Publication of JPH1050588A5 publication Critical patent/JPH1050588A5/ja
Application granted granted Critical
Publication of JP3661291B2 publication Critical patent/JP3661291B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP21919396A 1996-08-01 1996-08-01 露光装置 Expired - Lifetime JP3661291B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP21919396A JP3661291B2 (ja) 1996-08-01 1996-08-01 露光装置
US08/904,435 US5864386A (en) 1996-08-01 1997-07-31 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21919396A JP3661291B2 (ja) 1996-08-01 1996-08-01 露光装置

Publications (3)

Publication Number Publication Date
JPH1050588A JPH1050588A (ja) 1998-02-20
JPH1050588A5 JPH1050588A5 (enExample) 2004-08-12
JP3661291B2 true JP3661291B2 (ja) 2005-06-15

Family

ID=16731674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21919396A Expired - Lifetime JP3661291B2 (ja) 1996-08-01 1996-08-01 露光装置

Country Status (2)

Country Link
US (1) US5864386A (enExample)
JP (1) JP3661291B2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067591A (ko) 1996-03-04 1997-10-13 오노 시게오 투영노광장치
US6238479B1 (en) * 1997-10-24 2001-05-29 Canon Kabushiki Kaisha Raw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part
JP4154744B2 (ja) * 1997-12-01 2008-09-24 株式会社ニコン フッ化カルシウム結晶の製造方法および原料の処理方法
JPH11307430A (ja) 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
US6933513B2 (en) * 1999-11-05 2005-08-23 Asml Netherlands B.V. Gas flushing system for use in lithographic apparatus
TWI238292B (en) * 2000-02-10 2005-08-21 Asml Netherlands Bv Lithographic projection apparatus having a temperature controlled heat shield
JP3870002B2 (ja) * 2000-04-07 2007-01-17 キヤノン株式会社 露光装置
EP1276016B1 (en) * 2001-07-09 2009-06-10 Canon Kabushiki Kaisha Exposure apparatus
EP1531362A3 (en) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
US7489388B2 (en) * 2003-12-22 2009-02-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
JP5167572B2 (ja) * 2004-02-04 2013-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4418699B2 (ja) * 2004-03-24 2010-02-17 キヤノン株式会社 露光装置
KR101555707B1 (ko) * 2005-04-18 2015-09-25 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
JP2006339303A (ja) * 2005-05-31 2006-12-14 Nikon Corp 露光装置、露光方法及びデバイスの製造方法
US7812928B2 (en) * 2005-07-06 2010-10-12 Nikon Corporation Exposure apparatus
JP4992714B2 (ja) * 2005-07-06 2012-08-08 株式会社ニコン 露光装置
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
JP2008102807A (ja) 2006-10-20 2008-05-01 Sony Corp 温度制御装置および方法、並びにプログラム
JP4192986B2 (ja) 2006-10-20 2008-12-10 ソニー株式会社 温度制御装置および方法、並びにプログラム
US7791709B2 (en) * 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
US20080137055A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008159677A (ja) * 2006-12-21 2008-07-10 Canon Inc ステージ装置および露光装置
US20090153812A1 (en) * 2007-12-17 2009-06-18 Canon Kabushiki Kaisha Positioning apparatus, exposure apparatus, and device manufacturing method
TWI857848B (zh) * 2023-11-10 2024-10-01 先進光電科技股份有限公司 可調控溫度之光學成像鏡頭

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989031A (en) * 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
US5469260A (en) * 1992-04-01 1995-11-21 Nikon Corporation Stage-position measuring apparatus
KR0139039B1 (ko) * 1993-06-30 1998-06-01 미타라이 하지메 노광장치와 이것을 이용한 디바이스 제조방법
JP3453818B2 (ja) * 1993-11-08 2003-10-06 株式会社ニコン 基板の高さ位置検出装置及び方法

Also Published As

Publication number Publication date
JPH1050588A (ja) 1998-02-20
US5864386A (en) 1999-01-26

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