JP3647128B2 - 電子ビーム露光装置とその露光方法 - Google Patents

電子ビーム露光装置とその露光方法 Download PDF

Info

Publication number
JP3647128B2
JP3647128B2 JP04587896A JP4587896A JP3647128B2 JP 3647128 B2 JP3647128 B2 JP 3647128B2 JP 04587896 A JP04587896 A JP 04587896A JP 4587896 A JP4587896 A JP 4587896A JP 3647128 B2 JP3647128 B2 JP 3647128B2
Authority
JP
Japan
Prior art keywords
optical system
electron
electron beam
electron optical
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04587896A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09245708A5 (enExample
JPH09245708A (ja
Inventor
真人 村木
進 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP04587896A priority Critical patent/JP3647128B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to DE69738276T priority patent/DE69738276T2/de
Priority to KR1019970007085A priority patent/KR100225335B1/ko
Priority to EP03077053A priority patent/EP1369897A3/en
Priority to EP97301406A priority patent/EP0794552B1/en
Priority to EP03077051A priority patent/EP1369895B1/en
Priority to US08/811,602 priority patent/US5834783A/en
Priority to EP03077052A priority patent/EP1369896A3/en
Publication of JPH09245708A publication Critical patent/JPH09245708A/ja
Priority to US09/098,432 priority patent/US5973332A/en
Priority to US09/313,072 priority patent/US6166387A/en
Priority to US09/596,052 priority patent/US6323499B1/en
Application granted granted Critical
Publication of JP3647128B2 publication Critical patent/JP3647128B2/ja
Publication of JPH09245708A5 publication Critical patent/JPH09245708A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electron Beam Exposure (AREA)
JP04587896A 1996-03-04 1996-03-04 電子ビーム露光装置とその露光方法 Expired - Fee Related JP3647128B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP04587896A JP3647128B2 (ja) 1996-03-04 1996-03-04 電子ビーム露光装置とその露光方法
EP03077052A EP1369896A3 (en) 1996-03-04 1997-03-04 Electron beam exposure apparatus and method and device manufacturing method
EP03077053A EP1369897A3 (en) 1996-03-04 1997-03-04 Electron beam exposure apparatus and method, and device manufacturing method
EP97301406A EP0794552B1 (en) 1996-03-04 1997-03-04 Electron beam exposure apparatus and method, and device manufacturing method
EP03077051A EP1369895B1 (en) 1996-03-04 1997-03-04 Electron beam exposure apparatus and method, and device manufacturing method
US08/811,602 US5834783A (en) 1996-03-04 1997-03-04 Electron beam exposure apparatus and method, and device manufacturing method
DE69738276T DE69738276T2 (de) 1996-03-04 1997-03-04 Elektronenstrahl-Belichtungsgerät, Belichtungsverfahren und Verfahren zur Erzeugung eines Objekts
KR1019970007085A KR100225335B1 (ko) 1996-03-04 1997-03-04 전자빔노광장치와 그 방법 및 디바이스제조방법
US09/098,432 US5973332A (en) 1996-03-04 1998-06-17 Electron beam exposure method, and device manufacturing method using same
US09/313,072 US6166387A (en) 1996-03-04 1999-05-17 Electron beam exposure apparatus and method
US09/596,052 US6323499B1 (en) 1996-03-04 2000-06-16 Electron beam exposure apparatus and method, and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04587896A JP3647128B2 (ja) 1996-03-04 1996-03-04 電子ビーム露光装置とその露光方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2003417979A Division JP3728315B2 (ja) 2003-12-16 2003-12-16 電子ビーム露光装置、電子ビーム露光方法、および、デバイス製造方法
JP2005003009A Division JP3913250B2 (ja) 2005-01-07 2005-01-07 電子ビーム露光装置とその露光方法

Publications (3)

Publication Number Publication Date
JPH09245708A JPH09245708A (ja) 1997-09-19
JP3647128B2 true JP3647128B2 (ja) 2005-05-11
JPH09245708A5 JPH09245708A5 (enExample) 2005-08-04

Family

ID=12731493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04587896A Expired - Fee Related JP3647128B2 (ja) 1996-03-04 1996-03-04 電子ビーム露光装置とその露光方法

Country Status (1)

Country Link
JP (1) JP3647128B2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099568A (ja) * 2010-10-29 2012-05-24 Canon Inc 描画装置、および、物品の製造方法
US8766215B2 (en) 2011-07-19 2014-07-01 Canon Kabushiki Kaisha Charged particle beam drawing apparatus and method of manufacturing article
US8927945B2 (en) 2011-08-23 2015-01-06 Canon Kabushiki Kaisha Drawing apparatus and method of manufacturing article by controlling drawing on shot region side of boundary of shot regions

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3763446B2 (ja) 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP4585661B2 (ja) * 2000-03-31 2010-11-24 キヤノン株式会社 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP3940310B2 (ja) 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
JP4310070B2 (ja) 2002-04-26 2009-08-05 株式会社日立製作所 ストレージシステムの運用管理方式
US7041988B2 (en) 2002-05-10 2006-05-09 Advantest Corp. Electron beam exposure apparatus and electron beam processing apparatus
JP4183454B2 (ja) 2002-08-02 2008-11-19 株式会社日立ハイテクノロジーズ 電子ビーム描画装置
JP4421836B2 (ja) 2003-03-28 2010-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
US7005659B2 (en) 2003-07-08 2006-02-28 Canon Kabushiki Kaisha Charged particle beam exposure apparatus, charged particle beam exposure method, and device manufacturing method using the same apparatus
JP2005032837A (ja) * 2003-07-08 2005-02-03 Canon Inc 荷電粒子描画方法及び該方法を用いたデバイス製造方法
JP4494734B2 (ja) * 2003-07-08 2010-06-30 キヤノン株式会社 荷電粒子線描画方法、荷電粒子線露光装置及びデバイス製造方法
EP2575144B1 (en) * 2003-09-05 2017-07-12 Carl Zeiss Microscopy GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
JP2005268268A (ja) 2004-03-16 2005-09-29 Canon Inc 電子ビーム露光装置
JP4532184B2 (ja) * 2004-06-29 2010-08-25 キヤノン株式会社 電極およびその製造方法ならびに偏向器アレイ構造体の製造方法
JP4477436B2 (ja) 2004-06-30 2010-06-09 キヤノン株式会社 荷電粒子線露光装置
JP4652830B2 (ja) 2005-01-26 2011-03-16 キヤノン株式会社 収差調整方法、デバイス製造方法及び荷電粒子線露光装置
JP4657740B2 (ja) 2005-01-26 2011-03-23 キヤノン株式会社 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP2006278028A (ja) * 2005-03-28 2006-10-12 Ebara Corp 電子線装置及び該装置を用いたデバイス製造方法
EP1753010B1 (en) 2005-08-09 2012-12-05 Carl Zeiss SMS GmbH Particle-optical system
JP4804136B2 (ja) * 2005-12-08 2011-11-02 キヤノン株式会社 荷電粒子線装置及びデバイス製造方法
WO2007112465A1 (en) * 2006-04-03 2007-10-11 Ims Nanofabrication Ag Particle-beam exposure apparatus with overall-modulation of a patterned beam
JP2008066359A (ja) * 2006-09-05 2008-03-21 Canon Inc 荷電ビームレンズアレイ、露光装置及びデバイス製造方法
JP5606292B2 (ja) 2010-11-19 2014-10-15 キヤノン株式会社 描画装置、物品の製造方法、偏向装置の製造方法、および、描画装置の製造方法
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
JP4804592B2 (ja) * 2011-05-30 2011-11-02 キヤノン株式会社 荷電粒子線装置及びデバイス製造方法
JP2013021215A (ja) * 2011-07-13 2013-01-31 Canon Inc ビーム計測装置、描画装置、および物品の製造方法
JP5963139B2 (ja) * 2011-10-03 2016-08-03 株式会社Ｐａｒａｍ 電子ビーム描画方法および描画装置
US8878143B2 (en) 2011-10-03 2014-11-04 Param Corporation Electron beam lithography device and lithographic method
JP2014216631A (ja) * 2013-04-30 2014-11-17 キヤノン株式会社 描画装置、及び物品の製造方法
JP2016122676A (ja) * 2014-12-24 2016-07-07 株式会社アドバンテスト 露光装置および露光方法
JP6727021B2 (ja) * 2016-04-26 2020-07-22 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム照射装置、マルチ荷電粒子ビームの照射方法及びマルチ荷電粒子ビームの調整方法
US10347460B2 (en) * 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
EP3893263A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus
WO2023085133A1 (ja) 2021-11-09 2023-05-19 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423476A (en) * 1977-07-25 1979-02-22 Akashi Seisakusho Kk Composite electron lens
JPS6042825A (ja) * 1983-08-19 1985-03-07 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPS60105229A (ja) * 1983-11-14 1985-06-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPS60173834A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> マルチ荷電ビ−ム露光装置
JPH0789530B2 (ja) * 1985-05-17 1995-09-27 日本電信電話株式会社 荷電ビ−ム露光装置
JPS6271224A (ja) * 1985-09-25 1987-04-01 Toshiba Corp 電子ビ−ム露光装置
JPS6276619A (ja) * 1985-09-30 1987-04-08 Toshiba Corp マルチ荷電ビ−ム描画装置
JP3647143B2 (ja) * 1996-06-12 2005-05-11 キヤノン株式会社 電子ビーム露光装置及びその露光方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099568A (ja) * 2010-10-29 2012-05-24 Canon Inc 描画装置、および、物品の製造方法
US8766215B2 (en) 2011-07-19 2014-07-01 Canon Kabushiki Kaisha Charged particle beam drawing apparatus and method of manufacturing article
TWI467619B (zh) * 2011-07-19 2015-01-01 佳能股份有限公司 帶電粒子束描繪設備和製造物品的方法
US8927945B2 (en) 2011-08-23 2015-01-06 Canon Kabushiki Kaisha Drawing apparatus and method of manufacturing article by controlling drawing on shot region side of boundary of shot regions

Also Published As

Publication number Publication date
JPH09245708A (ja) 1997-09-19

Similar Documents

Publication Publication Date Title
JP3647128B2 (ja) 電子ビーム露光装置とその露光方法
US5834783A (en) Electron beam exposure apparatus and method, and device manufacturing method
US6137113A (en) Electron beam exposure method and apparatus
US6472672B1 (en) Electron beam exposure apparatus and its control method
JP3796317B2 (ja) 電子ビーム露光方法及びそれを用いたデバイス製造方法
US5981954A (en) Electron beam exposure apparatus
KR100495651B1 (ko) 하전입자선노광장치와 디바이스의 제조방법 및하전입자선응용장치
JP3647136B2 (ja) 電子ビーム露光装置
JP2000012438A (ja) マルチ電子ビーム露光方法及び装置、ならびにデバイス製造方法
JP3913250B2 (ja) 電子ビーム露光装置とその露光方法
JP3647143B2 (ja) 電子ビーム露光装置及びその露光方法
JP3728315B2 (ja) 電子ビーム露光装置、電子ビーム露光方法、および、デバイス製造方法
JP4143204B2 (ja) 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP3832914B2 (ja) 電子ビーム露光装置及び該装置を用いたデバイス製造方法
JP3673608B2 (ja) 電子ビーム照明装置及び該装置を備えた電子ビーム露光装置
JP3976835B2 (ja) 電子ビーム露光方法及び電子ビーム露光装置
JP4006054B2 (ja) 電子ビーム露光装置
JPH10335223A (ja) 電子ビーム露光方法及び電子ビーム露光装置
JPH10308340A (ja) 電子ビーム露光方法及び電子ビーム露光装置
JPH10321509A (ja) 電子ビーム露光方法及び電子ビーム露光装置
JPH10214778A (ja) 電子ビーム露光装置及び電子ビーム露光方法
JPH09330868A (ja) 電子ビーム露光方法及びそれを用いたデバイス製造方法
JPH10321508A (ja) 電子ビーム露光方法及び電子ビーム露光装置
JPH10214777A (ja) 電子ビーム照明装置及び該装置を備えた電子ビーム露光装置

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20041020

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20041111

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050107

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050131

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050208

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080218

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090218

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100218

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100218

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110218

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120218

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130218

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140218

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees