JP3619452B2

JP3619452B2 - Package for storing semiconductor elements

Info

Publication number: JP3619452B2
Application number: JP2000397443A
Authority: JP
Inventors: 晃子松崎
Original assignee: Kyocera Corp
Current assignee: Kyocera Corp
Priority date: 2000-12-27
Filing date: 2000-12-27
Publication date: 2005-02-09
Anticipated expiration: 2020-12-27
Also published as: JP2002198454A

Description

【０００１】
【発明の属する技術分野】
本発明は、光通信やマイクロ波通信、ミリ波通信等の分野に用いられる高い周波数で作動する各種半導体素子を収納する半導体素子収納用パッケージに関する。
【０００２】
【従来の技術】
従来の光通信やマイクロ波通信、ミリ波通信等の高い周波数で作動する各種半導体素子を気密封止して収容する半導体素子収納用パッケージ（以下、半導体パッケージという）として、例えば光通信分野に用いられる光半導体パッケージを図５に示す。
【０００３】
同図に示すように、光半導体パッケージは、一般に鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト（Ｃｏ）合金や銅（Ｃｕ）−タングステン（Ｗ）合金等の金属材料から成り、上面の略中央部に半導体レーザ（ＬＤ）やフォトダイオード（ＰＤ）等の光半導体素子等の半導体素子１１９が載置される載置部１０５を有し、外部の実装基板（図示せず）にネジ止めされるネジ止め孔１１２を設けた、略長方形の板状である基体１０１を有する。
【０００４】
また、この載置部１０５を囲繞するようにして基体１０１の上面に銀ロウ等のロウ材を介して接合されるとともに、基体１０１の長辺側の両側部には半導体素子１１９と外部電気回路（図示せず）とを電気的に接続する高周波信号入出力用の入出力端子１０３を嵌着接合するための貫通孔または切欠部から成る取付部１０６を有し、かつ基体１０１の短辺側の一側部に光ファイバ１１０の固定用の筒状の固定部材１０９が嵌着接合される貫通孔１１３が形成された、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料から成る金属枠体１０２を有する。
【０００５】
更に、取付部１０６に取着された入出力端子１０３と、金属枠体１０２の上面に取着された、半導体素子１１９を気密に封止する蓋体１２０を具備する。
【０００６】
入出力端子１０３は、図６に示すように上面の１辺から対向する他辺にかけて形成された線路導体１１４を有する誘電体から成る平板部１１５と、平板部１１５の上面に線路導体１１４を間に挟んで接合された誘電体から成る立壁部１１６とから構成されている。
【０００７】
また、入出力端子１０３の線路導体１１４に略平行な側面の一部には、線路導体１１４を擬似同軸状に囲み接地導体として機能するとともに、取付部１０６の内周面に銀ロウ等のロウ材を介して接合させる接合媒体として機能するメタライズ層１２１が形成されている。
【０００８】
この線路導体１１４の上面には、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料から成り、銀ロウ等のロウ材で接合されるとともに、入出力端子１０３と外部電気回路との電気的接続を行う機能を有するリード端子１１８が設けられる。
【０００９】
また、金属枠体１０２の光伝送路である貫通孔１１３の外側周辺部には、金属枠体１０２の熱膨張係数に近似するＦｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属材料から成る光ファイバ１１０固定用の筒状の固定部材１０９が銀ロウ等のロウ材で接合される。
【００１０】
また、シールリング１２２は、金属枠体１０２の上面および入出力端子１０３の上面に銀ロウ等のロウ材を介して接合され、入出力端子１０３を挟持するとともに上面に蓋体１２０をシーム溶接等により接合するための媒体として機能する。
【００１１】
このような半導体パッケージは、基体１０１の載置部１０５に半導体素子１１９を錫（Ｓｎ）−鉛（Ｐｂ）半田等の低融点ロウ材で載置固定させるとともに、半導体素子１１９の電極をボンディングワイヤ（図示せず）を介して入出力端子１０３の線路導体１１４に電気的に接続し、更に光ファイバ１１０と半導体素子１１９との光軸を調整する。
【００１２】
その後、固定部材１０９の外側端面に光ファイバ１１０を樹脂等の接着剤で取着した金属ホルダ１１１を金（Ａｕ）−錫（Ｓｎ）等の低融点ロウ材で接合するとともに、金属枠体１０２の上面に蓋体１２０をシーム溶接等により接合して基体１０１と金属枠体１０２と蓋体１２０とから成る容器内部に半導体素子１１９を気密に収容することにより、製品としての光半導体装置となる。
【００１３】
このような光半導体装置は、実装基板上にネジ止めされた後、半導体素子１１９を外部電気回路から供給される駆動用の高周波信号によって光励起させ、励起したレーザ光等の光を光ファイバ１１０に授受させ光ファイバ１１０内を伝送させることにより、大容量の情報を高速に伝送できる光電変換装置として機能し、光通信分野等に多用されている。
【００１４】
【発明が解決しようとする課題】
しかしながら、この従来の半導体パッケージにおいては、半導体パッケージの小型化と入出力端子１０３の長尺化が進む中、金属枠体１０２の取付部１０６における入出力端子１０３の側面と金属枠体１０２内面との間隙が狭くなる傾向にある。
【００１５】
そのため、図６に示すように入出力端子１０３のメタライズ層１２１を取付部１０６の内周面にロウ材を介して接合した際に、少しでもロウ材が多いと各々の接合にとって過剰なロウ材が、入出力端子１０３の側面と金属枠体１０２の内面との隙間に溜まり、所謂ロウ材溜まり１２３が形成されていた。
【００１６】
そして、熱膨張係数が入出力端子１０３および金属枠体１０２と異なるロウ材溜まり１２３を起点として、入出力端子１０３や金属枠体１０２、ひいては基体１０１に応力が加わることになり、その結果、この応力によって金属枠体１０２より弾性の低い入出力端子１０３にクラックが発生する場合があった。従って、高周波信号の伝送特性や半導体パッケージ内部の気密性が損なわれ、半導体素子１１９を正常に作動させることができないという問題点を有していた。
【００１７】
一方、上記問題点を解決する手段として、入出力端子１０３の平板部１１５や立壁部１１６の厚さを厚くすることにより強度を大きくすることも考えられるが、この場合、誘電体の表面積や体積が大きくなることによる浮遊容量の発生により、高周波信号の伝送特性が損なわれる。
【００１８】
更に、入出力端子１０３にクラックが発生しないまでも、基体１０１まで加わった応力により基体１０１が反り変形することになり、このような半導体パッケージを実装基板にネジ止めした際、基体１０１の反り変形が矯正され、反った状態で光軸が調整されていたため、光ファイバ１１０と半導体素子１１９との光軸がずれて光結合効率が損なわれ、半導体素子１１９の光信号による作動性を良好なものにできないという問題点もあった。
【００１９】
従って、本発明は上記問題点に鑑み完成されたもので、その目的は、入出力端子の側面と金属枠体の内面との間隙にロウ材溜まりを発生させないようにすることにより、入出力端子のクラックを防止して高周波信号の伝送特性や半導体パッケージ内部の気密性、更には光結合効率を良好なものとし、その結果、半導体素子を長期にわたり正常かつ安定に作動させ得る半導体パッケージを提供することにある。
【００２０】
【課題を解決するための手段】
本発明の半導体パッケージは、上面に半導体素子が載置される載置部を有する基体と、前記上面に前記載置部を囲繞するように取着されるとともに側部に切欠部または貫通孔から成る入出力端子の取付部が形成された金属枠体と、前記取付部に嵌着接合されて前記半導体素子と外部電気回路とを電気的に接続する入出力端子とを具備した半導体素子収納用パッケージにおいて、前記取付部は前記金属枠体の側部に前記上面に接しないように設けられているとともに、前記金属枠体の内面および／または外面の前記取付部の下端の隅部から前記上面に向けて溝が形成されていることを特徴とする。
【００２１】
本発明は、上記の構成により、入出力端子を取付部に銀ロウ等のロウ材で嵌着接合させた際、高周波信号の伝送特性や半導体パッケージ内部の気密性、光結合効率を損なわせるような大きなロウ材溜まりを、入出力端子の側面と金属枠体の内面との間隙に形成することがなくなる。
【００２２】
即ち、金属枠体の内面および／または外面の取付部の下端の隅部から基体の上面に向けて形成された溝は、過剰なロウ材のほとんどをその内部に引き込み溜めて、入出力端子の側面と金属枠体の内面との間に応力によるクラックや変形等の影響を与えるロウ材溜まりを発生させない。
【００２３】
その結果、ロウ材溜まりを起点として入出力端子や金属枠体ひいては基体に不要な応力を加えることが無くなり、高周波信号の伝送特性や光半導体パッケージ内部の気密性、更に光結合効率が良好に保持される。
【００２４】
本発明において、好ましくは、金属枠体の厚さをＴとした場合、溝部の金属枠体の厚さｔは０．３ｍｍ〜Ｔ−０．３ｍｍであり、かつ溝の幅Ｗは０．１〜０．６ｍｍであることを特徴とする。
【００２５】
本発明は、上記構成により、ロウ材溜まりを発生させないことは勿論のこと、金属枠体に設けた溝に過剰なロウ材が引き込まれ易くなり、その結果入出力端子に応力が加わるのを更に抑制し、上記本発明の効果をより有効なものとすることができる。
【００２６】
【発明の実施の形態】
本発明の半導体パッケージについて光半導体パッケージを一例として図面に基づき以下に詳細に説明する。図１は、本発明の光半導体パッケージの要部を示す分解斜視図、図２は本発明の光半導体パッケージの金属枠体の取付部の溝部を拡大した部分拡大斜視図である。これらの図において、１は基体、２は金属枠体、３は入出力端子、９は光ファイバ１０が取着された金属ホルダ１１を固定する筒状の固定部材であり、これらから光半導体パッケージ４は主に構成されている。
【００２７】
本発明の光半導体パッケージ４において、基体１は、その上面にＬＤ，ＰＤ等の光半導体素子を載置する載置部５を有するとともに、外部の実装基板にネジ止めするためのネジ止め孔１２が形成されており、光半導体素子を支持する支持部材として機能するとともに光半導体素子の作動時に発する熱を外部に効率良く放散する機能を有する。
【００２８】
一方、基体１と金属枠体２と蓋体（図示せず）とで内部に光半導体素子を収容するための容器が構成される。
【００２９】
また、基体１は、Ｆｅ−Ｎｉ−Ｃｏ合金やＣｕ−Ｗ合金等の金属材料から成り、例えば、Ｆｅ−Ｎｉ−Ｃｏ合金から成る場合、Ｆｅ−Ｎｉ−Ｃｏ合金のインゴット（塊）に圧延加工法や打ち抜き加工法等、従来周知の金属加工法を施すことにより製作される。
【００３０】
尚、基体１は、その外表面に耐食性に優れ、かつロウ材との濡れ性に優れる金属、具体的には厚さ０．５〜９μｍのニッケル層と厚さ０．５〜５μｍの金層を順次、メッキ法により被着させておくと、基体１が酸化腐食するのを有効に防止することができ、基体１の上面に光半導体素子を強固に接着固定させることができる。
【００３１】
また、この基体１の上面には、載置部５を囲繞するように金属枠体２が接合されており、長辺の両側部に光半導体素子と外部電気回路とを電気的に接続する入出力端子３を嵌着接合するための切欠部または貫通孔から成る取付部６が形成され、更に短辺の一側部に光半導体素子と光結合するための光伝送路である貫通孔１３が形成されており、この金属枠体２の内側に光半導体素子を収容するための空所が形成される。
【００３２】
この金属枠体２は、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属材料から成り、例えば、Ｆｅ−Ｎｉ−Ｃｏ合金のインゴット（塊）をプレス加工により枠状とすることにより形成され、基体１への取着は基体１上面と金属枠体２の下面とを銀ロウ材を介して銀ロウ付けすることにより行われる。
【００３３】
本発明において、金属枠体２は、図２〜図４に示すように、取付部６は基体１の上面に接しないように（達しないように）設けられており、取付部６の下端と基体１の上面との間には金属枠体２による側壁が存在する。そして、金属枠体２の内面および／または外面の取付部６の下端の隅部７から基体１の上面に向けて溝８が形成されている。この溝８は、入出力端子を取付部６に銀ロウ等のロウ材で嵌着接合させた際、過剰なロウ材が金属枠体２の内部の気密性や高周波信号の伝送特性、光結合効率を損なう程度の大きなロウ材溜まりを入出力端子の側面と金属枠体２の内面との間隙に生じることが無いように機能する。
【００３４】
即ち、溝８は、入出力端子を取付部６に嵌着接合させる際の過剰なロウ材のほとんどを引き込み溜める機能を有するため、図６のようなロウ材溜まりを起点として、金属枠体２や入出力端子、ひいては基体１に不要な応力が加わることは無い。
【００３５】
このような溝８は、金属枠体２の厚さをＴとした場合、溝８部の金属枠体２の厚さｔは０．３ｍｍ〜Ｔ−０．３ｍｍであり、かつ溝８の幅Ｗは０．１〜０．６ｍｍであることがよく、この場合応力によるクラックや変形等の影響を及ぼすロウ材溜まりを発生させないことは勿論、金属枠体２に設けた溝８部でロウ材溜まりを起点とする応力が有効に吸収されて緩和される応力緩衝作用により、入出力端子３に不要な応力が加わるのを更に抑制し、上記本発明の効果をより有効なものとすることができる。
【００３６】
即ち、金属枠体２の厚さは、一般的に０．５〜１．８ｍｍ程度のものが多用されていることから、溝８部の金属枠体２の厚さｔが０．３ｍｍ未満と薄い場合、溝８の深さが深くなって金属枠体２の剛性が損なわれ、外部からの応力に対して溝８部の金属枠体２が変形または破損したり、入出力端子３と金属枠体２との接合時における応力により、溝８部の金属枠体２にクラックが発生し易くなる。一方、その厚さｔがＴ−０．３ｍｍを越えると、溝８の深さが浅くなり過剰なロウ材を溝８に効果的に引き込み溜めることが困難となる。
【００３７】
また、溝８の幅Ｗが０．１ｍｍ未満の場合、幅が狭いことから過剰なロウ材が効果的に流れず、溝８部に溜めることが困難であり、一方、溝８の幅が０．６ｍｍを越えると、金属枠体２と入出力端子３との接合用のロウ材が必要以上に流れ出し、接合部のロウ材が不足して接合部で気密不良を生じるおそれがある。さらに、金属枠体２の剛性が損なわれ、外部からの応力によって金属枠体２に変形や破損が生じたり、また接合時に発生する応力により、溝８部の金属枠体２にクラックを生じる等の問題が起こり易くなる。
【００３８】
なお、溝８は、取付部６の下端の隅部７から基体１に向けて、取付部６の基体１上面からの高さと同程度の長さで形成される。溝８は、基体１の上面に達していても達していなくても良く、入出力端子３と金属枠体２との接合強度を維持するうえでその長さは１０ｍｍ以下が好ましい。
【００３９】
更に、溝８の平面視における断面形状は、図示した凹形状以外にＵ形状やＶ形状等、種々の形状とし得る。また、過剰なロウ材が溝８内に引き込まれ易いように、取付部６の下端の隅部７から遠ざかるにつれ、過剰なロウ材が溝８から漏れるのを防止すべくその深さを徐々に深くなるよう傾斜面としても良い。
【００４０】
そして、溝８の形状について他の実施の形態を図７（ａ）〜（ｃ）に示す。（ａ）は、溝８が基体１の上面に達しないように溝８を形成したものであり、基体１の上面に余計なロウ材が付着することによる、付着部での局所的な応力でクラック等が発生するのを防止し、また溝８が長いことによる金属枠体２の強度低下を防ぐことができる。
【００４１】
（ｂ）は、溝８が基体１の上面に達しないように溝８を形成するとともに、溝８の下方の幅が段状に広くなっている形状である。この場合、溝８内にロウ材が溜まり易くなり、また基体１の上面に余計なロウ材が付着することによる、付着部での局所的な応力でクラック等が発生するのを防止し、さらに溝８が長いことによる金属枠体２の強度低下を防ぐことができる。
【００４２】
（ｃ）は、溝８が基体１の上面に達しないように溝８を形成するとともに、溝８の下方の幅が漸次に広くなっている形状である。この場合、溝８内にロウ材が溜まり易くなり、また基体１の上面に余計なロウ材が付着することによる、付着部での局所的な応力でクラック等が発生するのを防止し、さらに溝８が長いことによる金属枠体２の強度低下を防ぐことができる。
【００４３】
また、入出力端子３と接合される金属枠体２の取付部６の表面から溝８の内面にかけてＮｉ層を被着形成しておくと、ロウ材を溝８に流して引き込み溜めることが容易となる。
【００４４】
なお、金属枠体２の基体１への接合は、基体１の上面と金属枠体２の下面とを、基体１上面に載置したプリフォーム状の銀ロウ等のロウ材を介して接合されるが、金属枠体２の表面には、基体１と同様に０．５〜９μｍのＮｉ層や厚さ０．５〜５μｍのＡｕ層等の金属層をメッキ法により被着させておくと良い。
【００４５】
また、金属枠体２の側部に形成された取付部６には入出力端子３が銀ロウ等のロウ材により嵌着接合されており、金属枠体２の一部となって内外を気密に仕切るとともに金属枠体２の内外を導通させる導電路を構成する。
【００４６】
この入出力端子３は、図１に示すように、略四角形の誘電体板から成り、上面に１辺から対向する他辺にかけて形成された線路導体１４を有する平板部１５と、その上面に線路導体１４を間に挟んで接合された誘電体からなる略直方体の立壁部１６とから構成されている。
【００４７】
この平板部１５は、アルミナ（Ａｌ_２Ｏ_３）や窒化アルミニウム（ＡｌＮ）、ムライト（３Ａｌ_２Ｏ_３・２ＳｉＯ_２）等のセラミックス等の誘電体から成り、その下面には全面に線路導体１４と同様の金属層が形成され、線路導体１４と平行となる側面にも同様のメタライズ層１７が形成される。
【００４８】
このような線路導体１４やメタライズ層１７等は、例えば、Ｗ等の金属粉末に有機溶剤、溶媒を添加混合して得た金属ペーストを、平板部１５用のセラミックグリーンシートに周知のスクリーン印刷法等により所定のパターンに印刷塗布しておき、焼成することにより形成される。
【００４９】
また、立壁部１６は、平板部１５と同様の誘電体から成り、その上面全面に線路導体１４と同様のメタライズ層が形成されるとともに、取付部６の内周面に接合される面にもメタライズ層が形成されている。
【００５０】
このようなメタライズ層は、線路導体１４等と同様の方法により金属ペーストを所定パターンに印刷塗布し焼成することにより形成される。
【００５１】
更に、入出力端子３の線路導体１４が金属枠体２の外部に導出される部位には、外部電気回路と入出力端子３との高周波信号の入出力を行なうための、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料から成るリード端子１８が、銀ロウ等のロウ材で接合される。
【００５２】
また、金属枠体２の短辺側の一側部には貫通孔１３が形成されており、一端面が貫通孔１３の開口を囲むように銀ロウ等のロウ材で接合され、かつ他方の端面には光ファイバ１０を樹脂等の接着剤で取着した金属ホルダ１１がＡｕ−Ｓｕ等の低融点ロウ材で接合される固定部材９が設けられる。
【００５３】
この固定部材９は、基体１や金属枠体２と同様の材料を同様の加工法で、円筒状等の所望の筒状に加工されるとともに、その表面に０．５〜９μｍのＮｉ層や０．５〜５μｍのＡｕ層等の金属層をメッキ法により被着させておくと良い。
【００５４】
一方、入出力端子３および固定部材９が取着される金属枠体２上面にはシールリング（図示せず）が銀ロウ等のロウ材で接合され、シールリングは金属枠体２上面に同様のロウ材で接合されて入出力端子３を挟持するとともに、その上面に光半導体素子を封止するための蓋体をシーム溶接等により接合するための接合媒体として機能する。
【００５５】
このような光半導体パッケージに、光半導体素子等の半導体素子を載置部５にＳｎ−Ｐｂ半田等の低融点ロウ材で載置固定するとともに、固定部材９に光ファイバ１０を樹脂等の接着剤で取着した金属ホルダ１１をＡｕ−Ｓｎ等の低融点ロウ材で接合した後、シールリング上面に蓋体をシーム溶接等により接合することにより、製品としての光半導体装置となる。
【００５６】
かくして、本発明は、金属枠体２と入出力端子３とをロウ材で接合した際に、入出力端子３にクラックが発生することによる高周波信号の伝送効率や金属枠体２の内部の気密性が損なわれることを有効に防止でき、更に、光半導体パッケージ４を実装基板上にネジ止めした際、基体１の反り変形が矯正されて光ファイバ１０と光半導体素子との光結合効率が損なわれることを有効に防止でき、その結果、光半導体素子を長期間にわたり、正常かつ安定に作動させ得る。
【００５７】
なお、本発明は上記実施の形態に限定されず、本発明の要旨を逸脱しない範囲内において種々の変更を行うことは何等支障ない。例えば、図３に示すように、溝８を金属枠体２の外面において取付部６の下端の隅部７に形成してもよく、あるいは図４に示すように、金属枠体２の内外面において溝８を取付部６の隅部７に形成しても良い。特に、金属枠体２の内外面に形成した場合には、自重によって垂れた過剰のロウ材のほとんど全てを溝８の溜めることができ、ロウ材溜まりによる応力の発生を皆無にすることが可能となる。また、金属枠体２の内面および／または外面に、溝８は取付部６の下端の少なくとも一つの隅部７に設ければよいが、勿論内面または外面において取付部６の下端の２つの隅部７に設けてもよい。さらに、金属枠体２の内外面に、最大限取付部６の下端の４つの隅部７に設けることができることは言うまでもない。
【００５８】
【発明の効果】
本発明は、金属枠体に設けた取付部にロウ材で嵌着接合される入出力端子を具備した半導体パッケージにおいて、取付部は金属枠体の側部に上面に接しないように設けられているとともに、金属枠体の内面および／または外面の取付部の下端の隅部から上面に向けて溝が形成されていることから、金属枠体の取付部に入出力端子をロウ材で接合した際、過剰なロウ材を引き込んで溝内に溜めることができ、入出力端子の側面と金属枠体の内面との間にロウ材溜まりを生じるのを有効に防止でき、その結果、金属枠体内部の気密性や高周波信号の伝送特性、更には光結合効率を良好なものとし、半導体素子を長期にわたり、正常かつ安定に作動させ得る。
【００５９】
また本発明は、好ましくは、金属枠体の厚さをＴとした場合、溝部の金属枠体の厚さｔは０．３ｍｍ〜Ｔ−０．３ｍｍであり、かつ溝の幅Ｗは０．１〜０．６ｍｍであることにより、入出力端子の側面と金属枠体の内面との間隙にロウ材溜まりを発生させないことは勿論、金属枠体に設けた溝部でロウ材溜まりを起点とする応力が有効に吸収されて緩和される応力緩衝作用により、入出力端子に応力が加わるのを更に抑制し、上記本発明の効果をより有効なものとすることができる。
【図面の簡単な説明】
【図１】本発明の半導体パッケージを示す分解斜視図である。
【図２】本発明の半導体パッケージについて実施の形態の一例を示し、溝部を拡大した部分拡大斜視図である。
【図３】本発明の半導体パッケージについて実施の形態の他の例を示し、溝部を拡大した部分拡大斜視図である。
【図４】本発明の半導体パッケージについて実施の形態の他の例を示し、溝部を拡大した部分拡大斜視図である。
【図５】従来の半導体パッケージを示す分解斜視図である。
【図６】従来の半導体パッケージについて入出力端子の側面と金属枠体の内面にロウ材溜まりが形成された様子を示す部分拡大斜視図である。
【図７】（ａ）〜（ｃ）は本発明の半導体パッケージの溝の各種形状について実施の形態をそれぞれ示す部分側面図である。
【符号の説明】
１：基体
２：金属枠体
３：入出力端子
４：光半導体パッケージ
５：載置部
６：取付部
７：隅部
８：溝[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a package for housing a semiconductor element that houses various semiconductor elements that operate at a high frequency used in fields such as optical communication, microwave communication, and millimeter wave communication.
[0002]
[Prior art]
As a semiconductor element housing package (hereinafter referred to as a semiconductor package) for hermetically sealing and housing various semiconductor elements operating at a high frequency such as conventional optical communication, microwave communication, and millimeter wave communication, it is used in the optical communication field, for example. The obtained optical semiconductor package is shown in FIG.
[0003]
As shown in the figure, the optical semiconductor package is generally made of a metal material such as an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or a copper (Cu) -tungsten (W) alloy, and is substantially at the center of the upper surface. And a mounting portion 105 on which a semiconductor element 119 such as an optical semiconductor element such as a semiconductor laser (LD) or a photodiode (PD) is mounted, and is screwed to an external mounting substrate (not shown). The substrate 101 has a substantially rectangular plate shape provided with screw holes 112.
[0004]
Further, it is joined to the upper surface of the base 101 via a brazing material such as silver brazing so as to surround the mounting portion 105, and the semiconductor element 119 and an external electric circuit are provided on both long sides of the base 101. A short side of the base body 101 has a mounting portion 106 formed of a through-hole or a notch for fitting and joining a high-frequency signal input / output terminal 103 that is electrically connected to the base 101 (not shown). A metal frame 102 made of a metal material such as an Fe—Ni—Co alloy having a through hole 113 into which a cylindrical fixing member 109 for fixing the optical fiber 110 is fitted and joined is formed on one side of the optical frame 110. .
[0005]
Further, an input / output terminal 103 attached to the attachment portion 106 and a lid 120 attached to the upper surface of the metal frame 102 for hermetically sealing the semiconductor element 119 are provided.
[0006]
As shown in FIG. 6, the input / output terminal 103 includes a flat plate portion 115 made of a dielectric having a line conductor 114 formed from one side of the upper surface to the opposite side, and the line conductor 114 interposed between the upper surface of the flat plate portion 115. And a standing wall portion 116 made of a dielectric material sandwiched between the two.
[0007]
In addition, a part of the side surface of the input / output terminal 103 that is substantially parallel to the line conductor 114 surrounds the line conductor 114 in a pseudo-coaxial manner and functions as a grounding conductor. A metallized layer 121 that functions as a bonding medium to be bonded via a material is formed.
[0008]
The upper surface of the line conductor 114 is made of a metal material such as an Fe—Ni—Co alloy, and is joined by a brazing material such as silver brazing, and functions to electrically connect the input / output terminal 103 and an external electric circuit. A lead terminal 118 is provided.
[0009]
Further, the outer peripheral portion of the through hole 113 that is an optical transmission path of the metal frame 102 is made of a metal material such as an Fe—Ni—Co alloy or an Fe—Ni alloy that approximates the thermal expansion coefficient of the metal frame 102. A cylindrical fixing member 109 for fixing the optical fiber 110 is joined with a brazing material such as silver brazing.
[0010]
The seal ring 122 is joined to the upper surface of the metal frame 102 and the upper surface of the input / output terminal 103 via a brazing material such as silver solder, and sandwiches the input / output terminal 103 and seams the lid 120 to the upper surface. It functions as a medium for joining.
[0011]
In such a semiconductor package, the semiconductor element 119 is placed and fixed on the mounting portion 105 of the base 101 with a low melting point solder such as tin (Sn) -lead (Pb) solder, and the electrode of the semiconductor element 119 is bonded to the bonding wire. It is electrically connected to the line conductor 114 of the input / output terminal 103 through (not shown), and the optical axis between the optical fiber 110 and the semiconductor element 119 is adjusted.
[0012]
Thereafter, a metal holder 111 having an optical fiber 110 attached to the outer end surface of the fixing member 109 with an adhesive such as a resin is joined with a low melting point brazing material such as gold (Au) -tin (Sn) and the metal frame 102. A lid 120 is joined to the upper surface of the substrate by seam welding or the like, and a semiconductor element 119 is hermetically accommodated inside a container composed of the base 101, the metal frame 102, and the lid 120, so that an optical semiconductor device as a product is obtained. .
[0013]
In such an optical semiconductor device, after being screwed onto a mounting substrate, the semiconductor element 119 is optically excited by a driving high-frequency signal supplied from an external electric circuit, and excited light such as laser light is applied to the optical fiber 110. By transmitting and receiving and transmitting the optical fiber 110, it functions as a photoelectric conversion device capable of transmitting a large amount of information at high speed, and is widely used in the field of optical communication and the like.
[0014]
[Problems to be solved by the invention]
However, in this conventional semiconductor package, while the miniaturization of the semiconductor package and the lengthening of the input / output terminal 103 are progressing, the side surface of the input / output terminal 103 and the inner surface of the metal frame body 102 in the mounting portion 106 of the metal frame body 102 are increased. It tends to be narrower.
[0015]
Therefore, as shown in FIG. 6, when the metallized layer 121 of the input / output terminal 103 is bonded to the inner peripheral surface of the mounting portion 106 via the brazing material, if there is a large amount of brazing material, an excessive amount of brazing material is excessive for each bonding. However, the so-called brazing material reservoir 123 is formed in the gap between the side surface of the input / output terminal 103 and the inner surface of the metal frame 102.
[0016]
As a result, stress is applied to the input / output terminal 103, the metal frame 102, and the base body 101, starting from the brazing material reservoir 123 having a thermal expansion coefficient different from that of the input / output terminal 103 and the metal frame 102. As a result, In some cases, the stress may cause cracks in the input / output terminals 103 that are less elastic than the metal frame 102. Therefore, the transmission characteristic of the high frequency signal and the airtightness inside the semiconductor package are impaired, and the semiconductor element 119 cannot be operated normally.
[0017]
On the other hand, as means for solving the above problems, it is conceivable to increase the strength by increasing the thickness of the flat plate portion 115 and the standing wall portion 116 of the input / output terminal 103. In this case, however, the surface area and volume of the dielectric are increased. Due to the generation of stray capacitance due to the increase in the frequency, the transmission characteristics of high-frequency signals are impaired.
[0018]
Further, the base 101 is warped and deformed by the stress applied to the base 101 even if no crack is generated in the input / output terminal 103. When such a semiconductor package is screwed to the mounting substrate, the base 101 is warped and deformed. Since the optical axis was adjusted while the optical fiber 110 and the semiconductor element 119 were deviated and the optical axis was adjusted, the optical coupling efficiency was impaired, and the operability of the semiconductor element 119 due to the optical signal was improved. There was also a problem that it was not possible.
[0019]
Accordingly, the present invention has been completed in view of the above problems, and its purpose is to prevent the occurrence of a brazing material pool in the gap between the side surface of the input / output terminal and the inner surface of the metal frame. The semiconductor package can be operated normally and stably over a long period of time by improving the high-frequency signal transmission characteristics, the airtightness inside the semiconductor package, and the optical coupling efficiency. There is.
[0020]
[Means for Solving the Problems]
The semiconductor package of the present invention has a base having a mounting portion on which a semiconductor element is mounted on the upper surface, and is attached so as to surround the mounting portion on the upper surface and has a notch or a through hole on the side. A semiconductor frame housing comprising: a metal frame formed with an input / output terminal mounting portion; and an input / output terminal that is fitted and joined to the mounting portion to electrically connect the semiconductor element and an external electric circuit. In the package, the mounting portion is provided on a side portion of the metal frame so as not to contact the upper surface, and the inner surface of the metal frame and / or an outer surface from a lower end corner of the mounting portion. A groove is formed toward the surface.
[0021]
According to the present invention, when the input / output terminal is fitted and joined to the mounting portion with a brazing material such as silver brazing, the high frequency signal transmission characteristics, the airtightness inside the semiconductor package, and the optical coupling efficiency are impaired. Such a large brazing material reservoir is not formed in the gap between the side surface of the input / output terminal and the inner surface of the metal frame.
[0022]
That is, the groove formed from the lower end corner of the inner surface and / or outer surface of the metal frame toward the upper surface of the base body draws and accumulates most of the excessive brazing material into the inside thereof, and No brazing material pool that affects cracks or deformation due to stress is generated between the side surface and the inner surface of the metal frame.
[0023]
As a result, unnecessary stress is not applied to the input / output terminals, the metal frame, and thus the substrate, starting from the brazing material pool, and high-frequency signal transmission characteristics, airtightness inside the optical semiconductor package, and optical coupling efficiency are maintained well. Is done.
[0024]
In the present invention, preferably, when the thickness of the metal frame is T, the thickness t of the metal frame of the groove is 0.3 mm to T-0.3 mm and the width W of the groove is 0.1. It is -0.6mm.
[0025]
According to the present invention, the above-described configuration does not cause the brazing material pool, and it is easy for excessive brazing material to be drawn into the grooves provided in the metal frame, and as a result, stress is further applied to the input / output terminals. And the effects of the present invention can be made more effective.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
The semiconductor package of the present invention will be described in detail below with reference to the drawings, taking an optical semiconductor package as an example. FIG. 1 is an exploded perspective view showing a main part of an optical semiconductor package of the present invention, and FIG. 2 is a partially enlarged perspective view in which a groove portion of a mounting portion of a metal frame of the optical semiconductor package of the present invention is enlarged. In these figures, 1 is a base, 2 is a metal frame, 3 is an input / output terminal, 9 is a cylindrical fixing member for fixing a metal holder 11 to which an optical fiber 10 is attached. 4 is mainly configured.
[0027]
In the optical semiconductor package 4 of the present invention, the base body 1 has a mounting portion 5 for mounting an optical semiconductor element such as an LD or PD on its upper surface, and a screwing hole 12 for screwing to an external mounting substrate. Is formed, and functions as a support member for supporting the optical semiconductor element and has a function of efficiently dissipating heat generated when the optical semiconductor element is operated to the outside.
[0028]
On the other hand, the base 1, the metal frame 2, and the lid (not shown) constitute a container for housing the optical semiconductor element therein.
[0029]
The substrate 1 is made of a metal material such as an Fe—Ni—Co alloy or a Cu—W alloy. For example, when the substrate 1 is made of an Fe—Ni—Co alloy, it is rolled into an ingot (lumb) of the Fe—Ni—Co alloy. It is manufactured by applying a conventionally well-known metal processing method such as a method or a punching method.
[0030]
The base 1 is a metal having excellent corrosion resistance and wettability with a brazing material on its outer surface, specifically a nickel layer having a thickness of 0.5 to 9 μm and a gold layer having a thickness of 0.5 to 5 μm. Are sequentially deposited by plating, it is possible to effectively prevent the base 1 from being oxidatively corroded, and the optical semiconductor element can be firmly bonded and fixed to the upper surface of the base 1.
[0031]
In addition, a metal frame 2 is joined to the upper surface of the base 1 so as to surround the mounting portion 5, and an optical semiconductor element and an external electric circuit are electrically connected to both sides of the long side. A mounting portion 6 including a notch or a through hole for fitting and joining the output terminal 3 is formed, and a through hole 13 serving as an optical transmission path for optically coupling to the optical semiconductor element is formed on one side of the short side. A space for accommodating the optical semiconductor element is formed inside the metal frame 2.
[0032]
The metal frame 2 is made of a metal material such as an Fe—Ni—Co alloy or an Fe—Ni alloy, and is formed, for example, by forming an ingot (lumps) of the Fe—Ni—Co alloy into a frame shape by pressing. The attachment to the substrate 1 is performed by brazing the upper surface of the substrate 1 and the lower surface of the metal frame 2 with a silver brazing material.
[0033]
In the present invention, as shown in FIGS. 2 to 4, the metal frame 2 is provided so that the attachment portion 6 does not come into contact with the upper surface of the base 1 (so as not to reach). A side wall by the metal frame 2 exists between the upper surface of the substrate 1. And the groove | channel 8 is formed toward the upper surface of the base | substrate 1 from the corner | angular part 7 of the lower end of the attachment part 6 of the inner surface of the metal frame 2, and / or the outer surface. When the input / output terminal is fitted and joined to the mounting portion 6 with a brazing material such as silver brazing, the groove 8 is formed by the excessive brazing material being hermetic inside the metal frame 2, high-frequency signal transmission characteristics, and optical coupling. It functions so that a large amount of brazing material that may impair efficiency is not generated in the gap between the side surface of the input / output terminal and the inner surface of the metal frame 2.
[0034]
That is, the groove 8 has a function of drawing and collecting most of the excessive brazing material when the input / output terminals are fitted and joined to the mounting portion 6, and therefore, the metal frame 2 as a starting point from the brazing material pool as shown in FIG. 6. In addition, unnecessary stress is not applied to the input / output terminals and thus the substrate 1.
[0035]
In such a groove 8, when the thickness of the metal frame 2 is T, the thickness t of the metal frame 2 at the portion of the groove 8 is 0.3 mm to T−0.3 mm, and the width of the groove 8 W is preferably 0.1 to 0.6 mm. In this case, the brazing material is not generated in the groove 8 provided in the metal frame 2, as well as the occurrence of the brazing material pool that has an effect of cracking or deformation due to stress. It is possible to further suppress the unnecessary stress from being applied to the input / output terminal 3 by the stress buffering action that effectively absorbs and relaxes the stress starting from the pool, thereby making the effect of the present invention more effective. it can.
[0036]
That is, since the thickness of the metal frame 2 is generally about 0.5 to 1.8 mm, the thickness t of the metal frame 2 in the groove 8 is less than 0.3 mm. If it is thin, the depth of the groove 8 becomes deep and the rigidity of the metal frame 2 is impaired, and the metal frame 2 in the groove 8 is deformed or damaged by external stress, or the input / output terminal 3 and the metal Due to the stress at the time of joining with the frame body 2, cracks are likely to occur in the metal frame body 2 in the groove 8 part. On the other hand, if the thickness t exceeds T-0.3 mm, the depth of the groove 8 becomes shallow, and it becomes difficult to effectively draw and store excess brazing material into the groove 8.
[0037]
Further, when the width W of the groove 8 is less than 0.1 mm, since the width is narrow, excessive brazing material does not flow effectively and it is difficult to accumulate in the groove 8 portion, while the width of the groove 8 is 0. If it exceeds .6 mm, the brazing material for joining the metal frame 2 and the input / output terminal 3 may flow out more than necessary, and the brazing material at the joint may be insufficient, resulting in an airtight defect at the joint. Furthermore, the rigidity of the metal frame 2 is impaired, the metal frame 2 is deformed or damaged by external stress, or the metal frame 2 in the groove 8 part is cracked by the stress generated during joining. The problem is likely to occur.
[0038]
The groove 8 is formed with a length similar to the height of the mounting portion 6 from the upper surface of the base 1 toward the base 1 from the lower corner 7 of the mounting portion 6. The groove 8 may or may not reach the upper surface of the substrate 1. The length of the groove 8 is preferably 10 mm or less in order to maintain the bonding strength between the input / output terminal 3 and the metal frame 2.
[0039]
Further, the cross-sectional shape of the groove 8 in plan view can be various shapes such as a U shape and a V shape in addition to the illustrated concave shape. Further, the depth of the brazing material is gradually increased so as to prevent the excessive brazing material from leaking out of the groove 8 as it moves away from the corner 7 at the lower end of the mounting portion 6 so that the excessive brazing material is easily drawn into the groove 8. It is good also as an inclined surface so that it may become deep.
[0040]
And other embodiment about the shape of the groove | channel 8 is shown to Fig.7 (a)-(c). (A) shows the groove 8 formed so that the groove 8 does not reach the upper surface of the substrate 1, and is a local stress at the adhesion portion due to the extra brazing material adhering to the upper surface of the substrate 1. It is possible to prevent the occurrence of cracks and the like and to prevent the strength of the metal frame 2 from being lowered due to the long groove 8.
[0041]
(B) is a shape in which the groove 8 is formed so that the groove 8 does not reach the upper surface of the substrate 1 and the width below the groove 8 is increased stepwise. In this case, the brazing material tends to accumulate in the groove 8, and it is possible to prevent the occurrence of cracks or the like due to local stress at the adhesion portion due to the extra brazing material adhering to the upper surface of the base 1. The strength reduction of the metal frame 2 due to the long groove 8 can be prevented.
[0042]
(C) is a shape in which the groove 8 is formed so that the groove 8 does not reach the upper surface of the substrate 1, and the width below the groove 8 is gradually increased. In this case, the brazing material tends to accumulate in the groove 8, and it is possible to prevent the occurrence of cracks or the like due to local stress at the adhesion portion due to the extra brazing material adhering to the upper surface of the base 1. The strength reduction of the metal frame 2 due to the long groove 8 can be prevented.
[0043]
In addition, if a Ni layer is deposited and formed from the surface of the attachment portion 6 of the metal frame 2 to be joined to the input / output terminal 3 to the inner surface of the groove 8, it is easy to flow the brazing material into the groove 8 and collect it. It becomes.
[0044]
The metal frame 2 is bonded to the base body 1 by bonding the upper surface of the base body 1 and the lower surface of the metal frame body 2 through a brazing material such as a preform-like silver brazing placed on the upper surface of the base body 1. However, a metal layer such as a Ni layer having a thickness of 0.5 to 9 μm or an Au layer having a thickness of 0.5 to 5 μm is deposited on the surface of the metal frame 2 by a plating method in the same manner as the substrate 1. good.
[0045]
An input / output terminal 3 is fitted and joined to a mounting portion 6 formed on a side portion of the metal frame 2 with a brazing material such as silver brazing, and the inside and outside of the metal frame 2 are hermetically sealed. A conductive path that divides the metal frame 2 into and out of the metal frame 2 is formed.
[0046]
As shown in FIG. 1, the input / output terminal 3 is formed of a substantially rectangular dielectric plate, and has a flat plate portion 15 having a line conductor 14 formed on the upper surface from one side to the opposite side, and a line on the upper surface. It is composed of a substantially rectangular parallelepiped standing wall portion 16 made of a dielectric material joined with a conductor 14 interposed therebetween.
[0047]
The flat plate portion 15 is made of a dielectric material such as ceramics such as alumina (Al ₂ O ₃ ), aluminum nitride (AlN), and mullite (3Al ₂ O ₃ .2SiO ₂ ). A similar metal layer is formed, and a similar metallized layer 17 is also formed on the side surface parallel to the line conductor 14.
[0048]
Such a line conductor 14, metallized layer 17, or the like is, for example, a well-known screen printing method on a ceramic green sheet for the flat plate portion 15 using a metal paste obtained by adding and mixing an organic solvent and a solvent to a metal powder such as W. For example, it is formed by printing and applying to a predetermined pattern and baking.
[0049]
Further, the standing wall portion 16 is made of the same dielectric material as the flat plate portion 15, and a metallized layer similar to that of the line conductor 14 is formed on the entire upper surface thereof, and also on the surface joined to the inner peripheral surface of the mounting portion 6. A metallized layer is formed.
[0050]
Such a metallized layer is formed by printing and applying a metal paste in a predetermined pattern by a method similar to that for the line conductor 14 and the like and baking it.
[0051]
Further, in a portion where the line conductor 14 of the input / output terminal 3 is led out of the metal frame 2, Fe—Ni—Co for inputting / outputting a high frequency signal between the external electric circuit and the input / output terminal 3 is provided. Lead terminals 18 made of a metal material such as an alloy are joined with a brazing material such as silver brazing.
[0052]
Further, a through hole 13 is formed on one side of the short side of the metal frame 2, one end face is joined with a brazing material such as silver brazing so as to surround the opening of the through hole 13, and the other side On the end face, there is provided a fixing member 9 to which a metal holder 11 having the optical fiber 10 attached with an adhesive such as resin is joined with a low melting point solder such as Au-Su.
[0053]
The fixing member 9 is formed by processing the same material as that of the base 1 and the metal frame 2 into a desired cylindrical shape such as a cylindrical shape by the same processing method, and has a Ni layer of 0.5 to 9 μm on the surface. A metal layer such as a 0.5 to 5 μm Au layer is preferably deposited by plating.
[0054]
On the other hand, a seal ring (not shown) is joined to the upper surface of the metal frame 2 to which the input / output terminals 3 and the fixing member 9 are attached with a brazing material such as silver brazing, and the seal ring is similar to the upper surface of the metal frame 2. The I / O terminal 3 is sandwiched by the brazing material and functions as a joining medium for joining a lid for sealing the optical semiconductor element to the upper surface by seam welding or the like.
[0055]
In such an optical semiconductor package, a semiconductor element such as an optical semiconductor element is placed and fixed on the mounting portion 5 with a low melting point solder such as Sn-Pb solder, and the optical fiber 10 is bonded to the fixing member 9 with a resin or the like. After joining the metal holder 11 attached with the agent with a low melting point brazing material such as Au—Sn, the lid is joined to the upper surface of the seal ring by seam welding or the like, thereby obtaining an optical semiconductor device as a product.
[0056]
Thus, according to the present invention, when the metal frame 2 and the input / output terminal 3 are joined with the brazing material, the transmission efficiency of the high-frequency signal due to the occurrence of cracks in the input / output terminal 3 and the airtightness inside the metal frame 2 are achieved. When the optical semiconductor package 4 is screwed onto the mounting substrate, the warp deformation of the base 1 is corrected and the optical coupling efficiency between the optical fiber 10 and the optical semiconductor element is impaired. As a result, the optical semiconductor element can be operated normally and stably over a long period of time.
[0057]
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, as shown in FIG. 3, the groove 8 may be formed in the corner 7 at the lower end of the mounting portion 6 on the outer surface of the metal frame 2, or the inner and outer surfaces of the metal frame 2 as shown in FIG. The groove 8 may be formed at the corner 7 of the mounting portion 6. In particular, when formed on the inner and outer surfaces of the metal frame 2, almost all of the excess brazing material drooped by its own weight can be accumulated in the groove 8, and it is possible to eliminate the generation of stress due to the brazing material accumulation. It becomes. Further, the groove 8 may be provided in at least one corner 7 at the lower end of the mounting portion 6 on the inner surface and / or outer surface of the metal frame 2, but of course the two corners at the lower end of the mounting portion 6 on the inner surface or outer surface. You may provide in the part 7. FIG. Furthermore, it cannot be overemphasized that it can provide in the four corners 7 of the lower end of the attachment part 6 to the inner and outer surface of the metal frame 2 to the maximum.
[0058]
【The invention's effect】
The present invention provides a semiconductor package having an input / output terminal fitted and joined to a mounting portion provided on a metal frame with a brazing material, and the mounting portion is provided on a side of the metal frame so as not to contact the upper surface. In addition, since a groove is formed from the lower end corner of the inner surface of the metal frame and / or the outer surface of the mounting portion to the upper surface, the input / output terminals are joined to the mounting portion of the metal frame with a brazing material. At this time, excessive brazing material can be drawn and accumulated in the groove, and it is possible to effectively prevent the brazing material accumulation between the side surface of the input / output terminal and the inner surface of the metal frame, and as a result, the metal frame The internal airtightness, high-frequency signal transmission characteristics, and optical coupling efficiency are improved, and the semiconductor element can be operated normally and stably over a long period of time.
[0059]
In the present invention, preferably, when the thickness of the metal frame is T, the thickness t of the metal frame of the groove is 0.3 mm to T-0.3 mm, and the width W of the groove is 0.00. By being 1 to 0.6 mm, the brazing material pool is not generated in the gap between the side surface of the input / output terminal and the inner surface of the metal frame, and the brazing material pool is a starting point in the groove provided in the metal frame. The stress buffering action in which the stress is effectively absorbed and relaxed can further suppress the stress from being applied to the input / output terminal, and the effect of the present invention can be made more effective.
[Brief description of the drawings]
FIG. 1 is an exploded perspective view showing a semiconductor package of the present invention.
FIG. 2 is a partially enlarged perspective view showing an example of an embodiment of a semiconductor package of the present invention, in which a groove is enlarged.
FIG. 3 is a partially enlarged perspective view showing another example of the embodiment of the semiconductor package of the present invention, in which a groove is enlarged.
FIG. 4 is a partially enlarged perspective view showing another example of the embodiment of the semiconductor package of the present invention, in which a groove is enlarged.
FIG. 5 is an exploded perspective view showing a conventional semiconductor package.
FIG. 6 is a partially enlarged perspective view showing a state in which a brazing material reservoir is formed on the side surface of the input / output terminal and the inner surface of the metal frame in the conventional semiconductor package.
7A to 7C are partial side views showing embodiments of various shapes of grooves of a semiconductor package of the present invention.
[Explanation of symbols]
1: Base 2: Metal frame 3: Input / output terminal 4: Optical semiconductor package 5: Mounting portion 6: Mounting portion 7: Corner portion 8: Groove

Claims

A base having a mounting portion on which a semiconductor element is mounted on the upper surface, and an input / output terminal mounting portion that is attached to the upper surface so as to surround the mounting portion and includes a notch or a through hole on a side portion In the package for housing a semiconductor element, comprising: a metal frame formed with: and an input / output terminal that is fitted and joined to the mounting portion to electrically connect the semiconductor element and an external electric circuit. The metal frame is provided on the side of the metal frame so as not to contact the upper surface, and a groove is formed from the inner surface of the metal frame and / or the outer surface to the upper surface from the lower corner of the mounting portion. A package for housing a semiconductor element.

When the thickness of the metal frame is T, the thickness t of the metal frame of the groove is 0.3 mm to T-0.3 mm, and the width W of the groove is 0.1 to 0.3 mm. 2. The package for housing a semiconductor device according to claim 1, wherein the package is 6 mm.