JP3560494B2

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Info

Publication number: JP3560494B2
Application number: JP08139899A
Authority: JP
Inventors: 英夫野口; 徳雄前田; 禎男竹村
Original assignee: Toho Kasei Co Ltd
Current assignee: Toho Kasei Co Ltd
Priority date: 1999-03-25
Filing date: 1999-03-25
Publication date: 2004-09-02
Anticipated expiration: 2019-03-25
Also published as: JP2000277602A

Description

【０００１】
【発明の属する技術分野】
本発明は、５０枚のウェハを収納可能なウェハ搬送用キャリアに関する。
【０００２】
【従来の技術】
従来、各ウェハを各溝で支持して２５枚のウェハを収納可能なウェハ搬送用キャリアは種々の構造のものが知られている。
【０００３】
しかしながら、近年、更に生産性の効率を向上させるため、キャリア寸法全体としては２５枚のウェハを収納可能なウェハ搬送用キャリアと大略同一にして、当該キャリアに収納可能なウェハの枚数を増やして５０枚のウェハを収納させたいという希望がある。
【０００４】
【発明が解決しようとする課題】
しかしながら、上記構造のものでは、単に枚数を増やすべく溝の幅寸法を小さくするだけでは、溝に支持された隣接するウェハ同士が接触して損傷する可能性が有る。特に、ウェハをキャリアに収納したのち、当該キャリアをバッチ式処理槽内に横置きに配置して、処理槽内で所定の処理を行う場合、各隣接するウェハ同士において、ウェハの先端同士が接触して損傷する可能性が有る。従って、自ずから溝の幅寸法もウェハの厚みによって最低限の寸法が決められてしまうため、後は溝の内壁面の傾斜角度を調整することによって、ウェハの先端同士が接触して損傷することを防止することが望まれていた。
【０００５】
従って、本発明の目的は、上記問題を解決することにあって、たとえバッチ式処理槽内に横置きに配置して処理槽内で所定の処理を行っても、各隣接するウェハの先端同士が接触して損傷する可能性が無いウェハ搬送用キャリアを提供することにある。
【０００６】
【課題を解決するための手段】
上記目的を達成するために、本発明は以下のように構成する。
【０００７】
本発明の第１態様によれば、各５インチウェハを各溝に部分的に挿入して当該ウェハを支持することにより５０枚の５インチウェハを収納可能なウェハ搬送用キャリアであって、
隣接溝間の中心間距離（Ｔ）は２．４ｍｍであり、上記溝内に挿入支持された上記ウェハのキャリア底部とは反対側の先端での隙間寸法をＧとし、少なくとも上記ウェハの表面での表面張力及び上記ウェハ自体の剛性により決定される第１係数をαとし、上記ウェハの外周縁が上記溝の溝底面からの最も上方の部分と交差する第１交点（Ｘ_１）と上記ウェハの外周縁が最も下の上記溝の溝底面と交差する第２交点（Ｘ_２）との間の距離をウェハ支持長さＨ_１とすると、上記溝の内壁は、キャリア底面に対して大略直交する溝基準面（Ｙ）に対して、θ＝Ｇ／（２×Ｈ_１×α）により求められる傾斜角度θで傾斜し、上記第１係数αは、上記ウェハの表面粗度、上記ウェハの処理液として純水を使用して水洗処理する上記処理液の粘性、これらに基づく上記ウェハの表面での表面張力、上記ウェハ自体の剛性により決定されて０．００２１４であり、かつ、上記隙間寸法Ｇは０．５ｍｍ以上とし、かつ、上記ウェハ支持長さＨ_１は、上記ウェハの直径Ｄ_１と第２係数Ｃとの積により求められ、上記第２係数Ｃは上記ウェハの直径Ｄ_１により０．５８〜０．６２の範囲内で決定されるようにしたことを特徴とする５インチウェハ搬送用キャリアを提供する。
【０００８】
本発明の第２態様によれば、各６インチウェハを各溝に部分的に挿入して当該ウェハを支持することにより５０枚の６インチウェハを収納可能なウェハ搬送用キャリアであって、
隣接溝間の中心間距離（Ｔ）は２．４ｍｍであり、上記溝内に挿入支持された上記ウェハのキャリア底部とは反対側の先端での隙間寸法をＧとし、少なくとも上記ウェハの表面での表面張力及び上記ウェハ自体の剛性により決定される第１係数をαとし、上記ウェハの外周縁が上記溝の溝底面からの最も上方の部分と交差する第１交点（Ｘ_１）と上記ウェハの外周縁が最も下の上記溝の溝底面と交差する第２交点（Ｘ_２）との間の距離をウェハ支持長さＨ_１とすると、上記溝の内壁は、キャリア底面に対して大略直交する溝基準面（Ｙ）に対して、θ＝Ｇ／（２×Ｈ_１×α）により求められる傾斜角度θで傾斜し、上記第１係数αは、上記ウェハの表面粗度、上記ウェハの処理液として純水を使用して水洗処理する上記処理液の粘性、これらに基づく上記ウェハの表面での表面張力、上記ウェハ自体の剛性により決定されて０．００１３１であり、かつ、上記隙間寸法Ｇは０．５ｍｍ以上とし、かつ、上記ウェハ支持長さＨ_１は、上記ウェハの直径Ｄ_１と第２係数Ｃとの積により求められ、上記第２係数Ｃは上記ウェハの直径Ｄ_１により０．５８〜０．６２の範囲内で決定されるようにしたことを特徴とする６インチウェハ搬送用キャリアを提供する。
【０００９】
本発明の第３態様によれば、各８インチウェハを各溝に部分的に挿入して当該ウェハを支持することにより５０枚の８インチウェハを収納可能なウェハ搬送用キャリアであって、
隣接溝間の中心間距離（Ｔ）は３．１７５ｍｍであり、上記溝内に挿入支持された上記ウェハのキャリア底部とは反対側の先端での隙間寸法をＧとし、少なくとも上記ウェハの表面での表面張力及び上記ウェハ自体の剛性により決定される第１係数をαとし、上記ウェハの外周縁が上記溝の溝底面からの最も上方の部分と交差する第１交点（Ｘ_１）と上記ウェハの外周縁が最も下の上記溝の溝底面と交差する第２交点（Ｘ_２）との間の距離をウェハ支持長さＨ_１とすると、上記溝の内壁は、キャリア底面に対して大略直交する溝基準面（Ｙ）に対して、θ＝Ｇ／（２×Ｈ_１×α）により求められる傾斜角度θで傾斜し、上記第１係数αは、上記ウェハの表面粗度、上記ウェハの処理液として純水を使用して水洗処理する上記処理液の粘性、これらに基づく上記ウェハの表面での表面張力、上記ウェハ自体の剛性により決定されて０．０００８１であり、かつ、上記隙間寸法Ｇは０．５ｍｍ以上とし、かつ、上記ウェハ支持長さＨ_１は、上記ウェハの直径Ｄ_１と第２係数Ｃとの積により求められ、上記第２係数Ｃは上記ウェハの直径Ｄ_１により０．５８〜０．６２の範囲内で決定されるようにしたことを特徴とする８インチウェハ搬送用キャリアを提供する。
【００１２】
【発明の実施の形態】
以下に、本発明にかかる実施の形態を図面に基づいて詳細に説明する。
【００１３】
本発明の第１の実施形態にかかるウェハ搬送用キャリア２は、図１〜５に示すように、処理液で侵食されない例えばフッ素樹脂などから構成され、図３に示すように、５０枚のウェハ１を５０個の溝３で支持して等間隔に収納するようにしている。各溝３は、図１，３に示すように、キャリア２の内面の底部を除く両側にそれぞれ左右に分割して１つの溝を構成するように設けられている。なお、図１〜５は、一例として５インチウェハ用のキャリアを想定した実施形態を図示しており、図６の（Ａ）はウェハの配置状態を示す説明図であり，図６の（Ｂ）は上記実施形態とは異なる８インチウェハ用のキャリア用の実施形態のうちの図１に対応する図のみを図示している。この図６の実施形態と図１の実施形態と異なるのは、穴４の位置と脚部６の形状が異なる程度で大きな差異は無いため、図１〜５の実施形態と同一個所に付いては同一符号を付してその説明を省略する。
【００１４】
キャリア２は、その底部には、５０枚のウェハを収納保持可能にするため、２５枚用のキャリアよりも厚肉になった脚部６を図１，３の左右に突出して設けている。キャリア２の両側面のそれぞれには、図４に示すように、２個の長方形状の穴４を夫々有するとともに、底部には前後方向に延びる１つの大きな開口５を設けて、キャリア２を処理槽内に配置して処理液でウェハ１にエッチングや洗浄などの所定の処理を行うとき、キャリア２内の各溝３に支持された各ウェハ１に対して処理液が円滑に接触するとともに、キャリア２内のウェハ１間から速やかに排出できるようにしている。
【００１５】
上記キャリア２の各溝３を構成する内壁面は、図５に示すように、キャリア底面に対して大略直交する溝基準面Ｙに対して傾斜角度θで傾斜するように構成して、上記ウェハ１のキャリア底部とは反対側の先端の最も不安定な部分で、各溝３に収納支持されたウェハ１同士が接触しないようにしている。
【００１６】
ここで、上記ウェハ１の直径をＤ_１とし（図１参照）、図５に示すように上記溝３内に挿入支持された上記ウェハ１のキャリア底部（図５では下側）とは反対側の先端（図５では上側）での隙間寸法をＧとし（図５参照）、上記ウェハ１の表面粗度、上記ウェハ１の処理液の粘性、これらに基づく上記ウェハ１の表面での表面張力、上記ウェハ自体の剛性により決定される第１係数をαとし、上記ウェハ１の直径Ｄ_１により０．５８〜０．６２の範囲内で決定される第２係数をＣとすると、上記傾斜角度θは、
θ＝Ｇ／（２×［Ｄ_１×Ｃ］×α）により求められる。
【００１７】
上記ウェハ１の先端間での隙間寸法をＧは、ウェハ１の各種処理において隣接するウェハ１同士が接触しない範囲として、具体的には、０．５ｍｍ以上とするのが好ましい。
【００１８】
上記第１係数αは、上記したように、ウェハ１の表面粗度、処理液の粘性、これらに基づくウェハ１の表面での表面張力、ウェハ１自体の剛性などにより決定される係数であり、例えば、５インチウェハの場合には、α＝０．００２１４であり、６インチウェハの場合には、α＝０．００１３１であり、８インチウェハの場合には、α＝０．０００８１である。
【００１９】
また、第２係数Ｃは、上記ウェハ１の直径Ｄ_１により０．５８〜０．６２の範囲内で決定されるが、一例として、５インチウェハの場合には０．６０、６インチウェハの場合には０．６０、８インチウェハの場合には０．６２とする。この第２係数Ｃは、ウェハ直径Ｄ_１との積［Ｄ_１×（０．５８〜０．６２）］により溝３の内壁面によるウェハ１の支持長さＨ_１を表すものである（図１参照）。すなわち、図１に示すように、ウェハ１の外周縁が溝３の溝底面からの最も上方の部分と交差する第１交点Ｘ_１とウェハ１の外周縁が最も下の溝３の溝底面と交差する第２交点Ｘ_２との間の距離Ｈ_１を示すものであり、ウェハ１が溝３により安定に支持されるか否かを決定する重要な要素である。よって、上記例では、ウェハ支持長さＨ_１は、５インチウェハの場合には、５インチ≒１２６ｍｍであるから、１２６ｍｍ×０．６０＝７５．６ｍｍ≒７６ｍｍ、６インチウェハの場合には、６インチ≒１５０ｍｍであるから、１５０ｍｍ×０．６０＝９０．０ｍｍ、８インチウェハの場合には、８インチ≒２００ｍｍであるから、２００ｍｍ×０．６２＝１２４．０ｍｍとなる。
【００２０】
このウェハ支持長さＨ_１は、１枚のウェハ１において、その外周縁が溝３の溝底面からの最も上方の部分と交差する第１交点Ｘ_１すなわちウェハ１が溝３の内壁面により支持されうる位置であってキャリア底面（例えば脚部６の底面で形成される面）から見て最上の位置である第１交点Ｘ_１と、ウェハ１の外周縁が最も下の溝３の溝底面と交差する第２交点Ｘ_２すなわちウェハ１が溝３の内壁面により支持されうる位置であって上記キャリア底面から見て最下の位置である第２交点Ｘ_２との間の距離であり、この範囲内でウェハ１が溝３の内壁面により有効に支持されている。よって、このウェハ支持長さＨ_１が短すぎると、ウェハ１の支持が不安定なものとなり、隣接ウェハ同士が接触する原因にもなってしまうため、ウェハ１の直径に応じて最低限の長さを確保する必要がある。一方、ウェハ支持長さＨ_１が長すぎると、処理液がキャリア内に残りやすくなり、排出効率が悪くなるため好ましくない。よって、５インチから８インチ程度までのウェハ１では、ウェハ支持長さＨ_１が、上記ウェハ１の直径Ｄ_１と（０．５８〜０．６２）との積により求められる長さとする必要がある。このウェハ支持長さＨ_１が予め決定されると、対向する溝３の第１交点Ｘ_１間の距離Ｗ_２（図１参照）、キャリア底部開口５の幅Ｗ_３（図１参照）、第１交点Ｘ_１とウェハ１の最下点との距離Ｈ_２（図１参照）、隣接溝３間の中心間距離Ｔ（図５参照）は、ほぼ決定される。これに対して、キャリア自体の外形的な大きさ、すなわち、キャリア幅Ｗ_０（図１，２参照）、キャリア長さＤ_０（図２参照）、キャリア高さＨ_０（図１，３，４参照）、対向する溝３の底面間の距離Ｗ_１（図１参照）はキャリアの直径との関係で従来と同様なものとしてほぼ決定される。
【００２１】
従って、上記ウェハ１の直径Ｄ_１と上記第２係数Ｃをそれぞれ選択して、ウェハ支持長さＨ_１を算出する一方、上記溝３内に挿入支持された上記ウェハ１のキャリア底部とは反対側の先端での隙間寸法Ｇを設定し、上記第１係数αを選択してそれらの値をθ＝Ｇ／（２×［Ｄ_１×Ｃ］×α）＝Ｇ／（２×Ｈ_１×α）にそれぞれ代入すると、上記傾斜角度θが求められる。
【００２２】
キャリア底面に対して大略直交する溝基準面Ｙに対して、上記求められた傾斜角度θで、対向する内壁面では対称となるように、傾斜するように上記キャリア２の各溝３を形成する内壁面を構成すれば、上記ウェハ１のキャリア底部とは反対側の先端の最も不安定な部分でも、各溝３に収納支持されたウェハ１同士が接触しないようにすることができる。逆にいえば、この傾斜角度θよりも大きな傾斜角度とすれば、各溝３に収納支持されたウェハ１同士が接触する可能性があり、この傾斜角度θよりも小さな傾斜角度とすれば、溝内壁面とウェハ１の表面との隙間が小さすぎて、溝３内にウェハ１を入れにくくなるとともに、溝内壁面とウェハ１の表面との隙間内に入り込んだ処理液が出にくくなるといった不具合が生じる。
【００２３】
ここで、一例として、５インチのウェハ１用のキャリア２の溝３の内壁面の傾斜角度θを求める。キャリア幅Ｗ_０は１５２ｍｍ、キャリア長さＤ_０は１４４ｍｍ、キャリア高さＨ_０は９５．２５ｍｍ、キャリア底部開口５の幅Ｗ_３は７５ｍｍ、溝３のウェハ支持長さＨ_１は上記したように７６ｍｍ、第１交点Ｘ_１とウェハ１の最下点との距離Ｈ_２とは間の距離Ｈ_２は９０ｍｍ、対向する溝３の底面間の距離Ｗ_１は１２８ｍｍ、対向する溝３の第１交点Ｘ_１間の距離Ｗ_２は１１４ｍｍ、隣接溝３間の中心間距離Ｔは２．４ｍｍ、第１係数αは０．００２１４とすると、隙間寸法Ｇは０．７ｍｍに設定すると、溝３の内壁面の傾斜角度θは、
θ＝Ｇ／（２×［Ｄ_１×Ｃ］×α）＝Ｇ／（２×Ｈ_１×α）＝０．７／（２×７６×０．００２１４）＝２°１５″となる。よって、キャリア底面に対して大略直交する溝基準面Ｙに対して溝３の内壁面の傾斜角度θを２°１５″にすれば、隙間寸法Ｇは０．７ｍｍとすることができて、たとえバッチ式処理槽内に横置きに配置して処理槽内で所定の処理を行っても、各隣接するウェハ同士の先端同士が接触して損傷する可能性が無い。
【００２４】
また、別の例として、６インチのウェハ１用のキャリア２の溝３の内壁面の傾斜角度θを求める。キャリア幅Ｗ_０は１７８ｍｍ、キャリア長さＤ_０は１４４ｍｍ、キャリア高さＨ_０は１１５ｍｍ、キャリア底部開口５の幅Ｗ_３は８９ｍｍ、溝３のウェハ支持長さＨ_１は上記したように９０ｍｍ、第１交点Ｘ_１とウェハ１の最下点との距離Ｈ_２とは間の距離Ｈ_２は１０５ｍｍ、対向する溝３の底面間の距離Ｗ_１は１５３ｍｍ、対向する溝３の第１交点Ｘ_１間の距離Ｗ_２は１３７ｍｍ、隣接溝３間の中心間距離Ｔは２．４ｍｍ、第１係数αは０．００１３１とし、隙間寸法Ｇは０．５２ｍｍに設定すると、溝３の内壁面の傾斜角度θは、
θ＝Ｇ／（２×［Ｄ_１×Ｃ］×α）＝Ｇ／（２×Ｈ_１×α）＝０．５２／（２×９０×０．００１３１）＝２°２１″となる。よって、キャリア底面に対して大略直交する溝基準面Ｙに対して溝３の内壁面の傾斜角度θを２°２１″にすれば、隙間寸法Ｇは０．５２ｍｍとすることができて、たとえバッチ式処理槽内に横置きに配置して処理槽内で所定の処理を行っても、各隣接するウェハ同士の先端同士が接触して損傷する可能性が無い。
【００２５】
さらに、別の例として、８インチのウェハ１用のキャリア２の溝３の内壁面の傾斜角度θを求める。キャリア幅Ｗ_０は２３３ｍｍ、キャリア長さＤ_０は１９８ｍｍ、キャリア高さＨ_０は１６０ｍｍ、キャリア底部開口５の幅Ｗ_３は１０４ｍｍ、溝３のウェハ支持長さＨ_１は１２５ｍｍ、第１交点Ｘ_１とウェハ１の最下点との距離Ｈ_２とは間の距離Ｈ_２は１４０ｍｍ、対向する溝３の底面間の距離Ｗ_１は２０３ｍｍ、対向する溝３の第１交点Ｘ_１間の距離Ｗ_２は１８３ｍｍ、隣接溝３間の中心間距離Ｔは３．１７５ｍｍ、第１係数αは、０．０００８１とし、隙間寸法Ｇは０．５ｍｍに設定すると、溝３の内壁面の傾斜角度θは、
θ＝Ｇ／（２×［Ｄ_１×Ｃ］×α）＝Ｇ／（２×Ｈ_１×α）＝０．５／（２×１２５×０．０００８１）≒２°５０″となる。よって、キャリア底面に対して大略直交する溝基準面Ｙに対して溝３の内壁面の傾斜角度θを２°５０″にすれば、隙間寸法Ｇは０．５ｍｍとすることができて、たとえバッチ式処理槽内に横置きに配置して処理槽内で所定の処理を行っても、各隣接するウェハ同士の先端同士が接触して損傷する可能性が無い。
【００２６】
上記実施形態によれば、上記溝内に挿入支持された上記ウェハ１のキャリア底部とは反対側の先端での隙間寸法Ｇを設定し、上記ウェハの表面での表面張力及び上記ウェハ自体の剛性と、上記ウェハ１が上記溝３の内壁面で支持される領域を考慮して、キャリア底面に対して大略直交する溝基準面（Ｙ）に対して傾斜する角度θをθ＝Ｇ／（２×Ｈ_１×α）により求め、この求められた傾斜角度θで傾斜するように上記溝３の内壁を形成するようにしている。従って、図１のような縦置き状態で処理液の槽内に配置して所定の処理を行っても、たとえバッチ式処理槽内に横置きに配置して処理槽内で所定の処理を行っても、上記式により求められた傾斜角度θで傾斜する溝３の内壁によりウェハ１が支持されているため、各隣接するウェハ１の先端同士が接触して損傷する可能性が無い。
【００２７】
【発明の効果】
本発明の上記第１態様によれば、上記溝内に挿入支持された上記ウェハのキャリア底部とは反対側の先端での隙間寸法をＧとし、少なくとも上記ウェハの表面での表面張力及び上記ウェハ自体の剛性により決定される第１係数をαとし、上記ウェハの外周縁が上記溝の溝底面からの最も上方の部分と交差する第１交点と上記ウェハの外周縁が最も下の上記溝の溝底面と交差する第２交点との間の距離をウェハ支持長さＨ_１とすると、上記溝の内壁は、キャリア底面に対して大略直交する溝基準面に対して、θ＝Ｇ／（２×Ｈ_１×α）により求められる傾斜角度θで傾斜するように構成している。従って、たとえバッチ式処理槽内に横置きに配置して処理槽内で所定の処理を行っても、上記傾斜角度θで傾斜する溝の内壁によりウェハが支持されているため、各隣接するウェハの先端同士が接触して損傷する可能性が無い。
【００２８】
本発明の上記第２態様によれば、上記第１態様において、上記第１係数αは、上記ウェハの表面粗度、上記ウェハの処理液の粘性、これらに基づく上記ウェハの表面での表面張力、上記ウェハ自体の剛性により決定されるように構成している。従って、上記ウェハの表面粗度、上記ウェハの処理液の粘性、これらに基づく上記ウェハの表面での表面張力、上記ウェハ自体の剛性を考慮して決定された上記傾斜角度θで傾斜する溝の内壁によりウェハが支持されているため、各隣接するウェハの先端同士が接触して損傷する可能性をより確実に無くすことができる。
【００２９】
また、本発明の第３態様によれば、第１又は２態様において、上記隙間寸法Ｇは０．５ｍｍ以上とすることにより決定された上記傾斜角度θで傾斜する溝の内壁によりウェハが支持されているため、各隣接するウェハの先端同士が接触して損傷する可能性をより確実に無くすことができる。
【００３０】
本発明の第４態様によれば、第１〜３のいずれかの態様において、上記ウェハ支持長さＨ_１は、上記ウェハの直径Ｄ_１と第２係数Ｃとの積により求められ、上記第２係数Ｃは上記ウェハの直径Ｄ_１により０．５８〜０．６２の範囲内で決定されるようにしている。すなわち、上記ウェハ支持長さＨ_１が（上記ウェハの直径Ｄ_１×０．５８）の長さより短すぎると、ウェハの支持が不安定なものとなり、隣接ウェハ同士が接触する原因にもなってしまう。一方、ウェハ支持長さＨ_１が（上記ウェハの直径Ｄ_１×０．６２）の長さより長すぎると、処理液がキャリア内に残りやすくなり、排出効率が悪くなるため好ましくない。よって、５インチから８インチ程度までのウェハでは、ウェハ支持長さＨ_１を（上記ウェハの直径Ｄ_１×０．５８〜０．６２）の長さとして、上記不具合をなくしつつ、各隣接するウェハの先端同士が接触して損傷する可能性を確実に無くすことができる。
【００３１】
本発明の第５態様によれば、第１〜４のいずれかの態様において、処理液として純水を使用して水洗処理する場合には、５インチウェハの場合には、上記第１係数αは０．００２１４、６インチウェハの場合には、上記第１係数αは０．００１３１、８インチウェハの場合には、上記第１係数αは０．０００８１であるようにしている。従って、処理液及びウェハの大きさをも考慮して決定された上記傾斜角度θで傾斜する溝の内壁によりウェハが支持されているため、各隣接するウェハの先端同士が接触して損傷する可能性をより確実に無くすことができる。
【図面の簡単な説明】
【図１】本発明の一実施形態にかかるウェハ搬送用キャリアの正面図であって、左半分は断面正面図である。
【図２】上記キャリアの平面図である。
【図３】上記キャリアの裏面図である。
【図４】上記キャリアの側面図である。
【図５】上記キャリアの溝部分の拡大説明図である。
【図６】（Ａ）は上記実施形態にかけるウェハの配置状態を示す説明図であり，（Ｂ）は上記実施形態とは異なる本発明の他の実施形態にかかるウェハ搬送用キャリアの正面図であって、左半分は断面正面図である。
【符号の説明】
１…ウェハ、２…キャリア、３…溝、４…穴、５…開口、６…脚部。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a wafer transport carrier capable of storing 50 wafers.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, wafer transport carriers capable of accommodating 25 wafers by supporting each wafer with each groove have various structures.
[0003]
However, in recent years, in order to further improve the efficiency of productivity, the overall size of the carrier is almost the same as a wafer carrier capable of accommodating 25 wafers, and the number of wafers accommodable in the carrier is increased by 50%. There is a desire to store one wafer.
[0004]
[Problems to be solved by the invention]
However, in the above-described structure, simply reducing the width of the groove to increase the number of wafers may cause adjacent wafers supported by the groove to come into contact with each other and be damaged. In particular, when a wafer is stored in a carrier, and the carrier is placed horizontally in a batch-type processing tank and a predetermined process is performed in the processing tank, the tips of the wafers contact each other adjacent wafers. May be damaged. Therefore, the minimum width of the groove is naturally determined by the thickness of the wafer, and thereafter, by adjusting the inclination angle of the inner wall surface of the groove, it is possible to prevent the front ends of the wafer from being damaged by contact. It was desired to prevent it.
[0005]
Therefore, an object of the present invention is to solve the above-described problems, and even if the wafers are arranged horizontally in a batch-type processing tank and a predetermined processing is performed in the processing tank, the leading ends of the adjacent wafers are connected to each other. It is an object of the present invention to provide a carrier for carrying a wafer, which is not likely to be damaged by contact with the wafer.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is configured as follows.
[0007]
According to a first aspect of the present invention, there is provided a wafer transport carrier capable of storing 50 5-inch wafers by partially inserting each 5-inch wafer into each groove and supporting the wafer.
The center-to-center distance (T) between the adjacent grooves is 2.4 mm, the gap dimension at the tip opposite to the carrier bottom of the wafer inserted and supported in the groove is G, and at least at the surface of the wafer The first coefficient determined by the surface tension of the wafer and the rigidity of the wafer itself is α, and the first intersection (X ₁ ) where the outer peripheral edge of the wafer intersects the uppermost part of the groove from the bottom of the groove and the wafer When the outer peripheral edge to the wafer support length H ₁ the distance between the second intersection point (X ₂₎ which intersects the groove bottom surface of the groove of the lowermost inner wall of the groove is approximately perpendicular to the carrier bottom With respect to the groove reference plane (Y) to be formed, is inclined at an inclination angle θ obtained by θ = G / (2 × H ₁ × α), and the first coefficient α is the surface roughness of the wafer, the viscosity of the treatment liquid washing process using pure water as the processing liquid, these Surface tension at the surface of the wafer based, is 0.00214 is determined by the rigidity of the wafer itself, and the gap size G is not less than 0.5 mm, and the wafer supporting length _{H 1} is the the diameter D ₁ of the wafer obtained by the product of the second coefficient C, the second coefficient C is characterized in that so as to be determined within the range of 0.58 to 0.62 by the diameter D ₁ of the said wafer And a 5-inch wafer carrier.
[0008]
According to a second aspect of the present invention, there is provided a wafer carrier capable of accommodating 50 6-inch wafers by partially inserting each 6-inch wafer into each groove and supporting the wafer,
The center-to-center distance (T) between the adjacent grooves is 2.4 mm, the gap dimension at the tip opposite to the carrier bottom of the wafer inserted and supported in the groove is G, and at least at the surface of the wafer The first coefficient determined by the surface tension of the wafer and the rigidity of the wafer itself is α, and the first intersection (X ₁ ) where the outer peripheral edge of the wafer intersects the uppermost part of the groove from the bottom of the groove and the wafer When the outer peripheral edge to the wafer support length H ₁ the distance between the second intersection point (X ₂₎ which intersects the groove bottom surface of the groove of the lowermost inner wall of the groove is approximately perpendicular to the carrier bottom With respect to the groove reference plane (Y) to be formed, is inclined at an inclination angle θ obtained by θ = G / (2 × H ₁ × α), and the first coefficient α is the surface roughness of the wafer, the viscosity of the treatment liquid washing process using pure water as the processing liquid, these Surface tension at the surface of the wafer based, is 0.00131 is determined by the rigidity of the wafer itself, and the gap size G is not less than 0.5 mm, and the wafer supporting length _{H 1} is the the diameter D ₁ of the wafer obtained by the product of the second coefficient C, the second coefficient C is characterized in that so as to be determined within the range of 0.58 to 0.62 by the diameter D ₁ of the said wafer 6 inch wafer carrier.
[0009]
According to a third aspect of the present invention, there is provided a wafer carrier capable of storing 50 8-inch wafers by partially inserting each 8-inch wafer into each groove and supporting the wafer.
The center-to-center distance (T) between adjacent grooves is 3.175 mm , the gap dimension at the tip of the wafer inserted and supported in the groove opposite to the carrier bottom is G, and at least the surface of the wafer The first coefficient determined by the surface tension of the wafer and the rigidity of the wafer itself is α, and the first intersection (X ₁ ) where the outer peripheral edge of the wafer intersects the uppermost part of the groove from the bottom of the groove and the wafer When the outer peripheral edge to the wafer support length H ₁ the distance between the second intersection point (X ₂₎ which intersects the groove bottom surface of the groove of the lowermost inner wall of the groove is approximately perpendicular to the carrier bottom With respect to the groove reference plane (Y) to be formed, is inclined at an inclination angle θ obtained by θ = G / (2 × H ₁ × α), and the first coefficient α is the surface roughness of the wafer, the viscosity of the treatment liquid washing process using pure water as the processing liquid, this Surface tension at the surface of the wafer based on et a 0.00081 is determined by the rigidity of the wafer itself, and the gap size G is not less than 0.5 mm, and the wafer supporting length H ₁ is , the diameter _{D 1} of the said wafer and obtained by the product of the second coefficient C, the said second coefficient C was to be determined within the range of 0.58 to 0.62 by the diameter _{D 1} of the said wafer The present invention provides an 8-inch wafer carrier.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0013]
As shown in FIGS. 1 to 5, the wafer carrier 2 according to the first embodiment of the present invention is made of, for example, a fluororesin which is not eroded by the processing liquid. As shown in FIG. 1 are supported by 50 grooves 3 and housed at equal intervals. As shown in FIGS. 1 and 3, each groove 3 is provided on both sides of the inner surface of the carrier 2 except for the bottom portion so as to be divided into right and left sides to form one groove. FIGS. 1 to 5 show an embodiment in which a carrier for a 5-inch wafer is assumed as an example. FIG. 6A is an explanatory diagram showing an arrangement state of a wafer, and FIG. ) Shows only a diagram corresponding to FIG. 1 among embodiments for a carrier for an 8-inch wafer different from the above embodiment. The difference between the embodiment of FIG. 6 and the embodiment of FIG. 1 is that the position of the hole 4 and the shape of the leg 6 are different and there is no great difference. Are denoted by the same reference numerals and description thereof is omitted.
[0014]
The carrier 2 is provided at its bottom with legs 6 which are thicker than the carrier for 25 wafers and protrude to the left and right in FIGS. As shown in FIG. 4, each of both side surfaces of the carrier 2 has two rectangular holes 4 and one large opening 5 extending in the front-rear direction is provided at the bottom to process the carrier 2. When a predetermined processing such as etching or cleaning is performed on the wafer 1 with the processing liquid by disposing the processing liquid in the tank, the processing liquid smoothly contacts each wafer 1 supported by each groove 3 in the carrier 2. It can be quickly discharged from between the wafers 1 in the carrier 2.
[0015]
As shown in FIG. 5, the inner wall surface forming each groove 3 of the carrier 2 is configured to be inclined at an inclination angle θ with respect to a groove reference plane Y substantially perpendicular to the carrier bottom surface. At the most unstable portion at the end opposite to the bottom of the carrier 1, the wafers 1 housed and supported in the grooves 3 are prevented from coming into contact with each other.
[0016]
Here, the diameter of the D ₁ (see FIG. 1) of the wafer 1, the side opposite to the carrier bottom of the wafer 1 so inserted supported by the groove 3 as shown in FIG. 5 (lower in Fig. 5 side) The gap size at the tip (the upper side in FIG. 5) of the wafer 1 is defined as G (see FIG. 5), the surface roughness of the wafer 1, the viscosity of the processing solution of the wafer 1, the surface tension on the surface of the wafer 1 based on these. the first factor is determined by the rigidity of the wafer itself and alpha, the second coefficient when the C is determined within a range of 0.58 to 0.62 by the diameter D ₁ of the said wafer 1, the inclination angle θ is
θ = G / (2 × [D ₁ × C] × α)
[0017]
The gap G between the front ends of the wafers 1 is preferably in a range where adjacent wafers 1 do not come into contact with each other in various kinds of processing of the wafers 1, specifically, 0.5 mm or more.
[0018]
As described above, the first coefficient α is a coefficient determined by the surface roughness of the wafer 1, the viscosity of the processing liquid, the surface tension on the surface of the wafer 1 based on these, the rigidity of the wafer 1 itself, and the like. For example, in the case of a 5-inch wafer, α is 0.00214, in the case of a 6-inch wafer, α is 0.00131, and in the case of an 8-inch wafer, α is 0.00081.
[0019]
The second coefficient C is determined by a range of diameter _{D 1} by 0.58 to 0.62 above the wafer 1, as an example, when 5-inch wafers of 0.60,6 inch wafer In this case, it is 0.60, and in the case of an 8-inch wafer, it is 0.62. The second coefficient C is representative of the supporting length _{H 1} of the wafer 1 by the inner wall surface of the groove 3 by the product _{[D 1} × (0.58~0.62)] of the wafer diameter _{D 1} (FIG. 1). That is, as shown in FIG. 1, the groove bottom surface of the first intersection point X ₁ and the groove 3 of the outer peripheral edge lowermost wafer 1 which intersects the uppermost portion from the groove bottom surface of the outer peripheral edge groove 3 of the wafer 1 is indicative of the distance H ₁ between the second intersection X ₂ crossing is an important factor in determining whether the wafer 1 is stably supported by the grooves 3. Therefore, in the above example, the wafer support length _{H 1,} when 5-inch wafers, because 5 inches ≒ 126 mm, in the case of 126mm × 0.60 = 75.6mm ≒ 76mm, 6 -inch wafer is Since 6 inches ≒ 150 mm, 150 mm × 0.60 = 90.0 mm, and in the case of an 8 inch wafer, 8 inches ≒ 200 mm, so that 200 mm × 0.62 = 124.0 mm.
[0020]
The wafer support length H ₁ is a first intersection X ₁ where the outer peripheral edge of the wafer 1 intersects the uppermost portion from the bottom of the groove 3, that is, the wafer 1 is supported by the inner wall surface of the groove 3. a first intersection point X ₁ is uppermost position as viewed from the carrier bottom (e.g. the plane formed by the bottom surface of the leg 6) a that may be located where the groove bottom surface of the groove 3 under the outer peripheral edge of the wafer 1 is most second intersection point X ₂ i.e. the wafer 1 which intersect a position that can be supported by the inner wall surface of the groove 3 and the distance between the second intersection X ₂ is the position of the bottom when viewed from the carrier bottom, Within this range, the wafer 1 is effectively supported by the inner wall surface of the groove 3. Therefore, when the wafer support length H ₁ is too short, the support of the wafer 1 becomes unstable, since it becomes a cause adjacent wafer contact each other, the minimum length according to the diameter of the wafer 1 Need to be secured. On the other hand, when the wafer support length H ₁ is too long, the treatment liquid is liable to remain in the carrier is not preferred because the discharge efficiency. Thus, the wafer 1 of 5 inches to about eight inches wafer support length _{H 1} is required to be long sought by the product of the diameter _{D 1} of the said wafer 1 and (0.58 to 0.62) is there. When this wafer support length H ₁ is predetermined, the distance W ₂ between the first intersection point X ₁ in the opposing grooves 3 _(see FIG. 1), the width W ₃ of the carrier bottom opening 5 _(see FIG. 1), the The distance H ₂ (see FIG. 1) between one intersection X ₁ and the lowest point of the wafer ₁ and the center-to-center distance T between the adjacent grooves 3 (see FIG. 5) are substantially determined. On the other hand, the external dimensions of the carrier itself, that is, the carrier width W ₀ (see FIGS. 1 and 2), the carrier length D ₀ (see FIG. 2), and the carrier height H ₀ (see FIGS. 1, 3) 4), and the distance W ₁ between the bottom surfaces of the opposed grooves 3 (see FIG. 1) is substantially determined as the same as the conventional one in relation to the diameter of the carrier.
[0021]
Thus, by respectively selecting the diameter D ₁ and the second coefficient C of the wafer 1, while calculating the wafer support length H _1, opposite to the carrier bottom of the wafer 1 which is inserted into and supported within the groove 3 A gap size G at the end on the side is set, the above-mentioned first coefficient α is selected and their values are set as θ = G / (2 × [D ₁ × C] × α) = G / (2 × H ₁ × Substituting into α), the inclination angle θ is obtained.
[0022]
Each groove 3 of the carrier 2 is formed so as to be inclined with respect to the groove reference plane Y substantially orthogonal to the bottom surface of the carrier at the obtained inclination angle θ so as to be symmetric on the inner wall surface facing the groove reference plane Y. With the inner wall surface, even at the most unstable portion at the tip of the wafer 1 opposite to the carrier bottom, the wafers 1 stored and supported in the grooves 3 can be prevented from contacting each other. Conversely, if the inclination angle is larger than the inclination angle θ, there is a possibility that the wafers 1 stored and supported in the respective grooves 3 may come into contact with each other, and if the inclination angle is smaller than the inclination angle θ, Since the gap between the inner wall surface of the groove and the surface of the wafer 1 is too small, it is difficult to insert the wafer 1 into the groove 3 and the processing liquid that has entered the gap between the inner wall surface of the groove and the surface of the wafer 1 is difficult to come out. Failure occurs.
[0023]
Here, as an example, the inclination angle θ of the inner wall surface of the groove 3 of the carrier 2 for the 5-inch wafer 1 is obtained. Carrier width _{W 0} is 152 mm, the carrier length _{D 0} is 144 mm, the carrier height _{H 0} is 95.25Mm, the width _{W 3} of the carrier bottom opening 5 75 mm, as the wafer support length _{H 1} of the groove 3 was the 76 mm, the distance of _{H 2} between the distance of _{H 2} and the lowest point of the first intersection point _{X 1} and the wafer 1 is 90 mm, the distance _{W 1} between the bottom surface of the opposing grooves 3 128mm, the first opposing grooves 3 distance _{W 2} between the intersection _{X 1} is 114 mm, center distance T between the adjacent grooves 3 2.4 mm, when the first coefficient α and 0.00214, the gap dimension G is set to 0.7 mm, the groove 3 The inclination angle θ of the inner wall is
θ = G / (2 × [D ₁ × C] × α) = G / (2 × H ₁ × α) = 0.7 / (2 × 76 × 0.00214) = 2 ° 15 ″. If the inclination angle θ of the inner wall surface of the groove 3 with respect to the groove reference plane Y, which is substantially perpendicular to the bottom surface of the carrier, is 2 ° 15 ″, the gap dimension G can be 0.7 mm. Even if the wafers are arranged horizontally in the processing bath and the predetermined processing is performed in the processing bath, there is no possibility that the tips of adjacent wafers come into contact with each other and cause damage.
[0024]
As another example, the inclination angle θ of the inner wall surface of the groove 3 of the carrier 2 for the 6-inch wafer 1 is obtained. Carrier width _{W 0} is 178 mm, the carrier length _{D 0} is 144 mm, the carrier height _{H 0} is 115 mm, the width _{W 3} of the carrier bottom opening 5 89 mm, 90 mm as wafer support length _{H 1} of the groove 3 have been described above, distance of _{H 2} between the distance of _{H 2} and the lowest point of the first intersection point _{X 1} and the wafer 1 is 105 mm, the distance _{W 1} between the bottom surface of the opposing grooves 3 153 mm, the first intersection point X of the opposing groove 3 distance _{W 2} between ₁ 137 mm, center distance T is 2.4mm between adjacent grooves 3, the first coefficient α and 0.00131, the gap dimension G is set to 0.52 mm, the inner wall surface of the groove 3 The inclination angle θ is
θ = G / (2 × [D ₁ × C] × α) = G / (2 × H ₁ × α) = 0.52 / (2 × 90 × 0.00131) = 2 ° 21 ″. If the inclination angle θ of the inner wall surface of the groove 3 with respect to the groove reference plane Y that is substantially perpendicular to the carrier bottom surface is 2 ° 21 ″, the gap dimension G can be 0.52 mm. Even if the wafers are arranged horizontally in the processing bath and the predetermined processing is performed in the processing bath, there is no possibility that the tips of adjacent wafers come into contact with each other and cause damage.
[0025]
Further, as another example, the inclination angle θ of the inner wall surface of the groove 3 of the carrier 2 for the 8-inch wafer 1 is obtained. Carrier width _{W 0} is 233 mm, the carrier length _{D 0} is 198 mm, the carrier height _{H 0} is 160 mm, the width _{W 3} of the carrier bottom opening 5 104 mm, the wafer support length _{H 1} of the groove 3 is 125 mm, the first intersection point X ₁ and the distance of _{H 2} between the distance of _{H 2} and the lowest point of the wafer 1 is 140 mm, the distance _{W 1} between the bottom surface of the opposing grooves 3 203 mm, the distance between the first intersection point _{X 1} in the opposing grooves 3 W ₂ is 183 mm, center distance T between the adjacent grooves 3 3.175 mm, the first coefficient alpha, and 0.00081, the gap dimension G is set to 0.5 mm, the inclination angle of the inner wall surface of the groove 3 theta Is
θ = G / (2 × [D ₁ × C] × α) = G / (2 × H ₁ × α) = 0.5 / (2 × 125 × 0.00081) ≒ 2 ° 50 ″ If the inclination angle θ of the inner wall surface of the groove 3 with respect to the groove reference plane Y, which is substantially perpendicular to the bottom surface of the carrier, is 2 ° 50 ″, the gap dimension G can be 0.5 mm. Even if the wafers are arranged horizontally in the processing bath and the predetermined processing is performed in the processing bath, there is no possibility that the tips of adjacent wafers come into contact with each other and cause damage.
[0026]
According to the above embodiment, the gap dimension G at the tip opposite to the carrier bottom of the wafer 1 inserted and supported in the groove is set, and the surface tension on the surface of the wafer and the rigidity of the wafer itself are set. In consideration of a region where the wafer 1 is supported by the inner wall surface of the groove 3, an angle θ inclined with respect to a groove reference plane (Y) substantially orthogonal to the carrier bottom surface is defined as θ = G / (2 × H ₁ × α), and the inner wall of the groove 3 is formed so as to incline at the obtained inclination angle θ. Therefore, even if the predetermined processing is performed by disposing the processing liquid in a vertical state as shown in FIG. 1, even if the processing liquid is disposed horizontally in a batch processing tank, the predetermined processing is performed in the processing tank. However, since the wafer 1 is supported by the inner wall of the groove 3 inclined at the inclination angle θ obtained by the above equation, there is no possibility that the tips of the adjacent wafers 1 come into contact with each other and are damaged.
[0027]
【The invention's effect】
According to the first aspect of the present invention, a gap dimension at a tip opposite to the carrier bottom of the wafer inserted and supported in the groove is defined as G, at least a surface tension on the surface of the wafer and the wafer. The first coefficient determined by the rigidity of the groove is α, and the first intersection point where the outer peripheral edge of the wafer intersects the uppermost portion from the groove bottom of the groove and the outer peripheral edge of the wafer are the lowermost groove. When the distance between the second intersection point intersects the groove bottom surface and the wafer support length H _1, the inner wall of the groove, relative to the groove reference plane perpendicular generally the carrier bottom, theta = G / (2 × H ₁ × α). Therefore, even if the predetermined processing is performed in the processing tank by arranging it horizontally in the batch type processing tank, the wafer is supported by the inner wall of the groove inclined at the inclination angle θ. There is no possibility that the tips will contact each other and cause damage.
[0028]
According to the second aspect of the present invention, in the first aspect, the first coefficient α is the surface roughness of the wafer, the viscosity of the processing solution of the wafer, and the surface tension on the surface of the wafer based on these. , Is determined by the rigidity of the wafer itself. Therefore, the groove inclined at the inclination angle θ determined in consideration of the surface roughness of the wafer, the viscosity of the processing liquid of the wafer, the surface tension on the surface of the wafer based on these, and the rigidity of the wafer itself. Since the wafer is supported by the inner wall, the possibility that the tips of adjacent wafers come into contact with each other and cause damage can be more reliably eliminated.
[0029]
According to the third aspect of the present invention, in the first or second aspect, the wafer is supported by the inner wall of the groove inclined at the inclination angle θ determined by setting the gap dimension G to 0.5 mm or more. Therefore, the possibility that the tips of the adjacent wafers come into contact with each other and cause damage can be more reliably eliminated.
[0030]
According to a fourth aspect of the present invention, in the first to third one embodiment, the wafer support length H ₁ has a diameter D ₁ of the said wafer and obtained by the product of the second coefficient C, the first 2 coefficients C are to be determined within the range of 0.58 to 0.62 by the diameter _{D 1} of the said wafer. That is, when the wafer support length H ₁ is too short than the length (diameter D ₁ × 0.58 of the wafer), the support of the wafer becomes unstable, is also the cause of the adjacent wafer contact each other I will. On the other hand, when the wafer support length H ₁ is too long than the length (diameter D ₁ × 0.62 of the wafer), the treatment liquid is liable to remain in the carrier is not preferred because the discharge efficiency. Thus, the wafer 5 inches to about eight inches as the length of the wafer support length _{H 1} (diameter _{D 1} × from .58 to .62 of the wafer), while eliminating the above problem, each adjacent The possibility that the tips of the wafers are brought into contact with each other and damaged can be reliably eliminated.
[0031]
According to a fifth aspect of the present invention, in any one of the first to fourth aspects, the first coefficient α is used in a case where a washing process is performed using pure water as a processing liquid and a 5-inch wafer is used. The first coefficient α is 0.00131 for a 6-inch wafer, and the first coefficient α is 0.00081 for an 8-inch wafer. Therefore, since the wafer is supported by the inner wall of the groove inclined at the inclination angle θ determined also in consideration of the size of the processing liquid and the wafer, the tips of adjacent wafers may come into contact with each other and be damaged. Sex can be more reliably eliminated.
[Brief description of the drawings]
FIG. 1 is a front view of a wafer transfer carrier according to an embodiment of the present invention, and a left half is a cross-sectional front view.
FIG. 2 is a plan view of the carrier.
FIG. 3 is a rear view of the carrier.
FIG. 4 is a side view of the carrier.
FIG. 5 is an enlarged explanatory view of a groove portion of the carrier.
FIG. 6A is an explanatory view showing an arrangement state of wafers according to the above embodiment, and FIG. 6B is a front view of a wafer transfer carrier according to another embodiment of the present invention which is different from the above embodiment; The left half is a sectional front view.
[Explanation of symbols]
1 wafer, 2 carrier, 3 groove, 4 hole, 5 opening, 6 leg.

Claims

A wafer transport carrier capable of storing 50 5-inch wafers by partially inserting each 5-inch wafer (1) into each groove (3) and supporting the wafer,
The center-to-center distance (T) between the adjacent grooves is 2.4 mm, the gap dimension at the tip opposite to the carrier bottom of the wafer inserted and supported in the groove is G, and at least at the surface of the wafer The first coefficient determined by the surface tension of the wafer and the rigidity of the wafer itself is α, and the first intersection (X ₁ ) where the outer peripheral edge of the wafer intersects the uppermost part of the groove from the bottom of the groove and the wafer When the outer peripheral edge to the wafer support length H ₁ the distance between the second intersection point (X ₂₎ which intersects the groove bottom surface of the groove of the lowermost inner wall of the groove is approximately perpendicular to the carrier bottom With respect to the groove reference plane (Y) to be formed, is inclined at an inclination angle θ obtained by θ = G / (2 × H ₁ × α), and the first coefficient α is the surface roughness of the wafer, the viscosity of the treatment liquid washing process using pure water as the processing liquid, these Surface tension at the surface of the wafer based, is 0.00214 is determined by the rigidity of the wafer itself, and the gap size G is not less than 0.5 mm, and the wafer supporting length _{H 1} is the the diameter D ₁ of the wafer obtained by the product of the second coefficient C, the second coefficient C is characterized in that so as to be determined within the range of 0.58 to 0.62 by the diameter D ₁ of the said wafer 5 inch wafer carrier.

A wafer transport carrier capable of storing 50 6-inch wafers by partially inserting each 6-inch wafer (1) into each groove (3) and supporting the wafer,
The center-to-center distance (T) between the adjacent grooves is 2.4 mm, the gap dimension at the tip opposite to the carrier bottom of the wafer inserted and supported in the groove is G, and at least at the surface of the wafer The first coefficient determined by the surface tension of the wafer and the rigidity of the wafer itself is α, and the first intersection (X ₁ ) where the outer peripheral edge of the wafer intersects the uppermost part of the groove from the bottom of the groove and the wafer When the outer peripheral edge to the wafer support length H ₁ the distance between the second intersection point (X ₂₎ which intersects the groove bottom surface of the groove of the lowermost inner wall of the groove is approximately perpendicular to the carrier bottom With respect to the groove reference plane (Y) to be formed, is inclined at an inclination angle θ obtained by θ = G / (2 × H ₁ × α), and the first coefficient α is the surface roughness of the wafer, the viscosity of the treatment liquid washing process using pure water as the processing liquid, these Surface tension at the surface of the wafer based, is 0.00131 is determined by the rigidity of the wafer itself, and the gap size G is not less than 0.5 mm, and the wafer supporting length _{H 1} is the the diameter D ₁ of the wafer obtained by the product of the second coefficient C, the second coefficient C is characterized in that so as to be determined within the range of 0.58 to 0.62 by the diameter D ₁ of the said wafer 6 inch wafer carrier.

A wafer transport carrier capable of storing 50 8-inch wafers by partially inserting each 8-inch wafer (1) into each groove (3) and supporting the wafer.
The center-to-center distance (T) between adjacent grooves is 3.175 mm , the gap dimension at the tip of the wafer inserted and supported in the groove opposite to the carrier bottom is G, and at least the surface of the wafer The first coefficient determined by the surface tension of the wafer and the rigidity of the wafer itself is α, and the first intersection (X ₁ ) where the outer peripheral edge of the wafer intersects the uppermost part of the groove from the bottom of the groove and the wafer When the outer peripheral edge to the wafer support length H ₁ the distance between the second intersection point (X ₂₎ which intersects the groove bottom surface of the groove of the lowermost inner wall of the groove is approximately perpendicular to the carrier bottom With respect to the groove reference plane (Y) to be formed, is inclined at an inclination angle θ obtained by θ = G / (2 × H ₁ × α), and the first coefficient α is the surface roughness of the wafer, the viscosity of the treatment liquid washing process using pure water as the processing liquid, this Surface tension at the surface of the wafer based on et a 0.00081 is determined by the rigidity of the wafer itself, and the gap size G is not less than 0.5 mm, and the wafer supporting length H ₁ is , the diameter _{D 1} of the said wafer and obtained by the product of the second coefficient C, the said second coefficient C was to be determined within the range of 0.58 to 0.62 by the diameter _{D 1} of the said wafer An 8 inch wafer carrier.