JP3553196B2 - Ｓｏｉ基板の製造方法 - Google Patents

Ｓｏｉ基板の製造方法 Download PDF

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Publication number
JP3553196B2
JP3553196B2 JP10990895A JP10990895A JP3553196B2 JP 3553196 B2 JP3553196 B2 JP 3553196B2 JP 10990895 A JP10990895 A JP 10990895A JP 10990895 A JP10990895 A JP 10990895A JP 3553196 B2 JP3553196 B2 JP 3553196B2
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Japan
Prior art keywords
substrate
active substrate
bonded
active
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP10990895A
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English (en)
Japanese (ja)
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JPH08274286A (ja
Inventor
雄一 中吉
正 小川
明洋 石井
Original Assignee
コマツ電子金属株式会社
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Priority to JP10990895A priority Critical patent/JP3553196B2/ja
Priority to TW85103834A priority patent/TW300318B/zh
Publication of JPH08274286A publication Critical patent/JPH08274286A/ja
Application granted granted Critical
Publication of JP3553196B2 publication Critical patent/JP3553196B2/ja
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JP10990895A 1995-03-29 1995-03-29 Ｓｏｉ基板の製造方法 Expired - Lifetime JP3553196B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10990895A JP3553196B2 (ja) 1995-03-29 1995-03-29 Ｓｏｉ基板の製造方法
TW85103834A TW300318B (cs) 1995-03-29 1996-04-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10990895A JP3553196B2 (ja) 1995-03-29 1995-03-29 Ｓｏｉ基板の製造方法

Publications (2)

Publication Number Publication Date
JPH08274286A JPH08274286A (ja) 1996-10-18
JP3553196B2 true JP3553196B2 (ja) 2004-08-11

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ID=14522207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10990895A Expired - Lifetime JP3553196B2 (ja) 1995-03-29 1995-03-29 Ｓｏｉ基板の製造方法

Country Status (2)

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JP (1) JP3553196B2 (cs)
TW (1) TW300318B (cs)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964321A (ja) * 1995-08-24 1997-03-07 Komatsu Electron Metals Co Ltd Ｓｏｉ基板の製造方法
US6090688A (en) * 1996-11-15 2000-07-18 Komatsu Electronic Metals Co., Ltd. Method for fabricating an SOI substrate
JP3672436B2 (ja) 1998-05-19 2005-07-20 シャープ株式会社 太陽電池セルの製造方法
JP3944087B2 (ja) 2003-01-21 2007-07-11 株式会社東芝 素子形成用基板の製造方法
EP2359390A1 (en) * 2008-11-19 2011-08-24 MEMC Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
US8035962B2 (en) 2010-03-03 2011-10-11 Antec, Inc. Computer hot-plug structure
JP7187115B2 (ja) * 2018-12-04 2022-12-12 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
JPH08274286A (ja) 1996-10-18
TW300318B (cs) 1997-03-11

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