JP3461336B2 - リソグラフ工程において近接効果を減少させる方法 - Google Patents

リソグラフ工程において近接効果を減少させる方法

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Publication number
JP3461336B2
JP3461336B2 JP2000572719A JP2000572719A JP3461336B2 JP 3461336 B2 JP3461336 B2 JP 3461336B2 JP 2000572719 A JP2000572719 A JP 2000572719A JP 2000572719 A JP2000572719 A JP 2000572719A JP 3461336 B2 JP3461336 B2 JP 3461336B2
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JP
Japan
Prior art keywords
main
proximity effect
lithographic process
reducing
defining
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2000572719A
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English (en)
Japanese (ja)
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JP2002526792A (ja
Inventor
クリストフ ピエーラット，
ジェームズ， イー． ブルドルフ，
ウィリアム バッゲンストス，
ウィリアム スタントン，
Original Assignee
マイクロン テクノロジー， インク．
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Application filed by マイクロン テクノロジー， インク． filed Critical マイクロン テクノロジー， インク．
Publication of JP2002526792A publication Critical patent/JP2002526792A/ja
Application granted granted Critical
Publication of JP3461336B2 publication Critical patent/JP3461336B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
JP2000572719A 1998-10-01 1999-09-30 リソグラフ工程において近接効果を減少させる方法 Expired - Fee Related JP3461336B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/164,786 1998-10-01
US09/164,786 US6120952A (en) 1998-10-01 1998-10-01 Methods of reducing proximity effects in lithographic processes
PCT/US1999/022815 WO2000019272A1 (fr) 1998-10-01 1999-09-30 Technique permettant de reduire des effets de proximite lors de processus lithographiques

Publications (2)

Publication Number Publication Date
JP2002526792A JP2002526792A (ja) 2002-08-20
JP3461336B2 true JP3461336B2 (ja) 2003-10-27

Family

ID=22596084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000572719A Expired - Fee Related JP3461336B2 (ja) 1998-10-01 1999-09-30 リソグラフ工程において近接効果を減少させる方法

Country Status (8)

Country Link
US (3) US6120952A (fr)
EP (1) EP1125167B1 (fr)
JP (1) JP3461336B2 (fr)
KR (1) KR20010075482A (fr)
AT (1) ATE467858T1 (fr)
AU (1) AU6280799A (fr)
DE (1) DE69942370D1 (fr)
WO (1) WO2000019272A1 (fr)

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US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
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US7459248B2 (en) * 2005-02-24 2008-12-02 James Word Performing OPC on structures with virtual edges
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
US7381654B2 (en) * 2005-05-31 2008-06-03 Taiwan Semiconductor Manufacturing Co. Method for fabricating right-angle holes in a substrate
US7282401B2 (en) 2005-07-08 2007-10-16 Micron Technology, Inc. Method and apparatus for a self-aligned recessed access device (RAD) transistor gate
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US7434199B2 (en) * 2005-09-27 2008-10-07 Nicolas Bailey Cobb Dense OPC
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US7712068B2 (en) * 2006-02-17 2010-05-04 Zhuoxiang Ren Computation of electrical properties of an IC layout
US7506285B2 (en) 2006-02-17 2009-03-17 Mohamed Al-Imam Multi-dimensional analysis for predicting RET model accuracy
US7602001B2 (en) 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
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US7802226B2 (en) * 2007-01-08 2010-09-21 Mentor Graphics Corporation Data preparation for multiple mask printing
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
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Also Published As

Publication number Publication date
US6284419B2 (en) 2001-09-04
US6319644B2 (en) 2001-11-20
DE69942370D1 (de) 2010-06-24
ATE467858T1 (de) 2010-05-15
AU6280799A (en) 2000-04-17
JP2002526792A (ja) 2002-08-20
WO2000019272A1 (fr) 2000-04-06
KR20010075482A (ko) 2001-08-09
EP1125167A1 (fr) 2001-08-22
US20010002304A1 (en) 2001-05-31
US20010023045A1 (en) 2001-09-20
EP1125167B1 (fr) 2010-05-12
US6120952A (en) 2000-09-19
WO2000019272B1 (fr) 2000-05-25

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