JP3444821B2 - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物

Info

Publication number
JP3444821B2
JP3444821B2 JP28576299A JP28576299A JP3444821B2 JP 3444821 B2 JP3444821 B2 JP 3444821B2 JP 28576299 A JP28576299 A JP 28576299A JP 28576299 A JP28576299 A JP 28576299A JP 3444821 B2 JP3444821 B2 JP 3444821B2
Authority
JP
Japan
Prior art keywords
group
alicyclic hydrocarbon
carbon atoms
chemical
represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28576299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001109154A (ja
Inventor
利明 青合
健一郎 佐藤
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP28576299A priority Critical patent/JP3444821B2/ja
Priority to TW090108286A priority patent/TW562995B/zh
Publication of JP2001109154A publication Critical patent/JP2001109154A/ja
Priority to JP2003133513A priority patent/JP3620745B2/ja
Application granted granted Critical
Publication of JP3444821B2 publication Critical patent/JP3444821B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP28576299A 1999-10-06 1999-10-06 ポジ型フォトレジスト組成物 Expired - Fee Related JP3444821B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP28576299A JP3444821B2 (ja) 1999-10-06 1999-10-06 ポジ型フォトレジスト組成物
TW090108286A TW562995B (en) 1999-10-06 2001-04-06 Positive photoresist composition
JP2003133513A JP3620745B2 (ja) 1999-10-06 2003-05-12 ポジ型フォトレジスト組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28576299A JP3444821B2 (ja) 1999-10-06 1999-10-06 ポジ型フォトレジスト組成物
JP2003133513A JP3620745B2 (ja) 1999-10-06 2003-05-12 ポジ型フォトレジスト組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003133513A Division JP3620745B2 (ja) 1999-10-06 2003-05-12 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
JP2001109154A JP2001109154A (ja) 2001-04-20
JP3444821B2 true JP3444821B2 (ja) 2003-09-08

Family

ID=55182155

Family Applications (2)

Application Number Title Priority Date Filing Date
JP28576299A Expired - Fee Related JP3444821B2 (ja) 1999-10-06 1999-10-06 ポジ型フォトレジスト組成物
JP2003133513A Expired - Lifetime JP3620745B2 (ja) 1999-10-06 2003-05-12 ポジ型フォトレジスト組成物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2003133513A Expired - Lifetime JP3620745B2 (ja) 1999-10-06 2003-05-12 ポジ型フォトレジスト組成物

Country Status (2)

Country Link
JP (2) JP3444821B2 (enExample)
TW (1) TW562995B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020077099A (ko) * 2001-03-28 2002-10-11 스미또모 가가꾸 고교 가부시끼가이샤 화학 증폭형 포지티브 레지스트 조성물
KR20030035823A (ko) * 2001-08-02 2003-05-09 스미또모 가가꾸 고교 가부시끼가이샤 화학 증폭형 포지티브형 레지스트 조성물

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4768152B2 (ja) * 2000-09-01 2011-09-07 ダイセル化学工業株式会社 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
JP2002116542A (ja) * 2000-10-06 2002-04-19 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
US6927009B2 (en) * 2001-05-22 2005-08-09 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6852468B2 (en) 2001-06-12 2005-02-08 Fuji Photo Film Co., Ltd. Positive resist composition
JP3912767B2 (ja) * 2001-06-21 2007-05-09 富士フイルム株式会社 ポジ型感光性組成物
JP4262422B2 (ja) * 2001-06-28 2009-05-13 富士フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3836359B2 (ja) * 2001-12-03 2006-10-25 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP3803286B2 (ja) * 2001-12-03 2006-08-02 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
JP3841399B2 (ja) * 2002-02-21 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
WO2003082933A1 (en) 2002-04-01 2003-10-09 Daicel Chemical Industries, Ltd. Process for the production of high-molecular compounds for photoresist
JP4491503B2 (ja) * 2003-06-18 2010-06-30 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4439270B2 (ja) * 2003-06-18 2010-03-24 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
TWI375121B (en) 2004-06-28 2012-10-21 Fujifilm Corp Photosensitive composition and method for forming pattern using the same
JP4714488B2 (ja) * 2004-08-26 2011-06-29 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4472586B2 (ja) * 2005-06-20 2010-06-02 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4796792B2 (ja) 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4969916B2 (ja) * 2006-05-25 2012-07-04 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
KR100990106B1 (ko) 2007-04-13 2010-10-29 후지필름 가부시키가이샤 패턴형성방법, 이 패턴형성방법에 사용되는 레지스트 조성물, 현상액 및 린스액
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
EP1980911A3 (en) 2007-04-13 2009-06-24 FUJIFILM Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
JP4558064B2 (ja) 2007-05-15 2010-10-06 富士フイルム株式会社 パターン形成方法
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
KR20130114280A (ko) 2007-06-12 2013-10-16 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
WO2008153109A1 (ja) 2007-06-12 2008-12-18 Fujifilm Corporation ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP4919508B2 (ja) * 2007-09-13 2012-04-18 株式会社ダイセル フォトレジスト用単量体、高分子化合物及びフォトレジスト組成物
TW200916965A (en) 2007-10-01 2009-04-16 Jsr Corp Radiation-sensitive composition
JP5806800B2 (ja) 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
TWI533082B (zh) 2008-09-10 2016-05-11 Jsr股份有限公司 敏輻射性樹脂組成物
WO2010029982A1 (ja) 2008-09-12 2010-03-18 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP5591465B2 (ja) 2008-10-30 2014-09-17 丸善石油化学株式会社 濃度が均一な半導体リソグラフィー用共重合体溶液の製造方法
WO2011125685A1 (ja) 2010-03-31 2011-10-13 Jsr株式会社 感放射線性樹脂組成物
WO2012043684A1 (ja) 2010-09-29 2012-04-05 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
CN112558409B (zh) * 2019-09-25 2022-05-20 常州强力先端电子材料有限公司 能够在i线高产酸的磺酰亚胺类光产酸剂

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000159758A (ja) 1998-09-25 2000-06-13 Shin Etsu Chem Co Ltd 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパタ―ン形成方法
JP2000338673A (ja) 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP2000338674A (ja) 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3042618B2 (ja) * 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP3330903B2 (ja) * 1999-08-05 2002-10-07 ダイセル化学工業株式会社 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
JP3390702B2 (ja) * 1999-08-05 2003-03-31 ダイセル化学工業株式会社 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000159758A (ja) 1998-09-25 2000-06-13 Shin Etsu Chem Co Ltd 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパタ―ン形成方法
JP2000338673A (ja) 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP2000338674A (ja) 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020077099A (ko) * 2001-03-28 2002-10-11 스미또모 가가꾸 고교 가부시끼가이샤 화학 증폭형 포지티브 레지스트 조성물
KR20030035823A (ko) * 2001-08-02 2003-05-09 스미또모 가가꾸 고교 가부시끼가이샤 화학 증폭형 포지티브형 레지스트 조성물

Also Published As

Publication number Publication date
TW562995B (en) 2003-11-21
JP3620745B2 (ja) 2005-02-16
JP2001109154A (ja) 2001-04-20
JP2004004834A (ja) 2004-01-08

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