JP3315995B2 - ドープされた半導体材料から成る導電性尖端の製造方法 - Google Patents

ドープされた半導体材料から成る導電性尖端の製造方法

Info

Publication number
JP3315995B2
JP3315995B2 JP35526191A JP35526191A JP3315995B2 JP 3315995 B2 JP3315995 B2 JP 3315995B2 JP 35526191 A JP35526191 A JP 35526191A JP 35526191 A JP35526191 A JP 35526191A JP 3315995 B2 JP3315995 B2 JP 3315995B2
Authority
JP
Japan
Prior art keywords
layer
substrate
semiconductor material
mask layer
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP35526191A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0595140A (ja
Inventor
シユテングル ラインハルト
モイル ハンス‐ウイリー
ヘーンライン ウオルフガング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPH0595140A publication Critical patent/JPH0595140A/ja
Application granted granted Critical
Publication of JP3315995B2 publication Critical patent/JP3315995B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)
JP35526191A 1990-12-21 1991-12-20 ドープされた半導体材料から成る導電性尖端の製造方法 Expired - Lifetime JP3315995B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4041276.8 1990-12-21
DE4041276A DE4041276C1 (enExample) 1990-12-21 1990-12-21

Publications (2)

Publication Number Publication Date
JPH0595140A JPH0595140A (ja) 1993-04-16
JP3315995B2 true JP3315995B2 (ja) 2002-08-19

Family

ID=6421090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35526191A Expired - Lifetime JP3315995B2 (ja) 1990-12-21 1991-12-20 ドープされた半導体材料から成る導電性尖端の製造方法

Country Status (4)

Country Link
US (1) US5188977A (enExample)
EP (1) EP0493676B1 (enExample)
JP (1) JP3315995B2 (enExample)
DE (2) DE4041276C1 (enExample)

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US5319233A (en) * 1992-05-13 1994-06-07 Motorola, Inc. Field emission device employing a layer of single-crystal silicon
US5438343A (en) * 1992-07-28 1995-08-01 Philips Electronics North America Corporation Gas discharge displays and methodology for fabricating same by micromachining technology
EP0581376A1 (en) * 1992-07-28 1994-02-02 Koninklijke Philips Electronics N.V. Gas discharge lamps and method for fabricating same by micromachining technology
US5598052A (en) * 1992-07-28 1997-01-28 Philips Electronics North America Vacuum microelectronic device and methodology for fabricating same
KR960009127B1 (en) * 1993-01-06 1996-07-13 Samsung Display Devices Co Ltd Silicon field emission emitter and the manufacturing method
US5584739A (en) * 1993-02-10 1996-12-17 Futaba Denshi Kogyo K.K Field emission element and process for manufacturing same
US5561339A (en) * 1993-03-11 1996-10-01 Fed Corporation Field emission array magnetic sensor devices
US5903098A (en) * 1993-03-11 1999-05-11 Fed Corporation Field emission display device having multiplicity of through conductive vias and a backside connector
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
WO1994020975A1 (en) * 1993-03-11 1994-09-15 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
DE59400124D1 (de) * 1993-04-02 1996-03-28 Siemens Ag Verfahren zur Herstellung stabförmiger Siliziumstrukturen
US5378182A (en) * 1993-07-22 1995-01-03 Industrial Technology Research Institute Self-aligned process for gated field emitters
DE4325708C1 (de) * 1993-07-30 1994-06-16 Siemens Ag Verfahren zur Herstellung einer elektrisch leitenden Spitze aus dotiertem Silizium mittels lokaler Molekularstrahlepitaxie und Anwendung des Verfahrens zur Herstellung von Bauelementen der Vakuumelektronik (Feldemissionskathoden)
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5665421A (en) * 1993-09-08 1997-09-09 Candescent Technologies, Inc. Method for creating gated filament structures for field emission displays
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
JPH07193294A (ja) * 1993-11-01 1995-07-28 Matsushita Electric Ind Co Ltd 電子部品およびその製造方法
US5461009A (en) * 1993-12-08 1995-10-24 Industrial Technology Research Institute Method of fabricating high uniformity field emission display
KR970003750B1 (en) * 1993-12-14 1997-03-21 Korea Electronics Telecomm Manufacture for quantum wire semiconductor laser diode
US5394006A (en) * 1994-01-04 1995-02-28 Industrial Technology Research Institute Narrow gate opening manufacturing of gated fluid emitters
US5629583A (en) * 1994-07-25 1997-05-13 Fed Corporation Flat panel display assembly comprising photoformed spacer structure, and method of making the same
RU2074444C1 (ru) * 1994-07-26 1997-02-27 Евгений Инвиевич Гиваргизов Матричный автоэлектронный катод и электронный прибор для оптического отображения информации
US5773920A (en) * 1995-07-03 1998-06-30 The United States Of America As Represented By The Secretary Of The Navy Graded electron affinity semiconductor field emitter
US5844351A (en) * 1995-08-24 1998-12-01 Fed Corporation Field emitter device, and veil process for THR fabrication thereof
US5828288A (en) * 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US5688158A (en) * 1995-08-24 1997-11-18 Fed Corporation Planarizing process for field emitter displays and other electron source applications
US5641706A (en) * 1996-01-18 1997-06-24 Micron Display Technology, Inc. Method for formation of a self-aligned N-well for isolated field emission devices
US6027632A (en) * 1996-03-05 2000-02-22 Candescent Technologies Corporation Multi-step removal of excess emitter material in fabricating electron-emitting device
US5766446A (en) * 1996-03-05 1998-06-16 Candescent Technologies Corporation Electrochemical removal of material, particularly excess emitter material in electron-emitting device
US5893967A (en) * 1996-03-05 1999-04-13 Candescent Technologies Corporation Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
KR100278502B1 (ko) * 1996-06-28 2001-02-01 김영남 더블 게이트를 갖는 화산형 금속 fea 제조방법
JPH10149778A (ja) * 1996-09-17 1998-06-02 Toshiba Corp 微小冷陰極管とその駆動方法
US5719406A (en) * 1996-10-08 1998-02-17 Motorola, Inc. Field emission device having a charge bleed-off barrier
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same
US6193870B1 (en) * 1997-05-01 2001-02-27 The Regents Of The University Of California Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices
US6045678A (en) * 1997-05-01 2000-04-04 The Regents Of The University Of California Formation of nanofilament field emission devices
US6120674A (en) * 1997-06-30 2000-09-19 Candescent Technologies Corporation Electrochemical removal of material in electron-emitting device
US5965898A (en) * 1997-09-25 1999-10-12 Fed Corporation High aspect ratio gated emitter structure, and method of making
US6004830A (en) * 1998-02-09 1999-12-21 Advanced Vision Technologies, Inc. Fabrication process for confined electron field emission device
CN1279562C (zh) 1998-04-30 2006-10-11 叶夫根尼·因维维奇·吉瓦吉佐夫 稳定和受控的电子源,电子源的矩阵系统以及它们的生产的方法
US6235638B1 (en) * 1999-02-16 2001-05-22 Micron Technology, Inc. Simplified etching technique for producing multiple undercut profiles
US6628052B2 (en) * 2001-10-05 2003-09-30 Hewlett-Packard Development Company, L.P. Enhanced electron field emitter spindt tip and method for fabricating enhanced spindt tips

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US4786615A (en) * 1987-08-31 1988-11-22 Motorola Inc. Method for improved surface planarity in selective epitaxial silicon
US4758531A (en) * 1987-10-23 1988-07-19 International Business Machines Corporation Method of making defect free silicon islands using SEG
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US5090932A (en) * 1988-03-25 1992-02-25 Thomson-Csf Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters
JPH0278222A (ja) * 1988-09-13 1990-03-19 Nec Corp 微細電極の形成方法
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Also Published As

Publication number Publication date
DE59104547D1 (de) 1995-03-23
DE4041276C1 (enExample) 1992-02-27
US5188977A (en) 1993-02-23
EP0493676B1 (de) 1995-02-08
JPH0595140A (ja) 1993-04-16
EP0493676A1 (de) 1992-07-08

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