JP3308560B2 - 単一層コンデンサーの製造方法 - Google Patents
単一層コンデンサーの製造方法Info
- Publication number
- JP3308560B2 JP3308560B2 JP15381091A JP15381091A JP3308560B2 JP 3308560 B2 JP3308560 B2 JP 3308560B2 JP 15381091 A JP15381091 A JP 15381091A JP 15381091 A JP15381091 A JP 15381091A JP 3308560 B2 JP3308560 B2 JP 3308560B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- solution
- substrate
- noble metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000002356 single layer Substances 0.000 title claims description 6
- 239000010410 layer Substances 0.000 claims description 99
- 238000000034 method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 229910000510 noble metal Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 150000004703 alkoxides Chemical class 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 125000005595 acetylacetonate group Chemical group 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 150000003608 titanium Chemical class 0.000 claims description 2
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 claims 1
- 150000005323 carbonate salts Chemical class 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 28
- 238000009413 insulation Methods 0.000 description 21
- 239000000919 ceramic Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005119 centrifugation Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 titanium alkoxide Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 241000251238 Lamna nasus Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZRHOFLXFAAEXEE-UHFFFAOYSA-J butanoate;titanium(4+) Chemical compound [Ti+4].CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O ZRHOFLXFAAEXEE-UHFFFAOYSA-J 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002112 ferroelectric ceramic material Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4017518A DE4017518A1 (de) | 1990-05-31 | 1990-05-31 | Verfahren zur herstellung von monolayer-kondensatoren |
| DE4017518.9 | 1990-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04230011A JPH04230011A (ja) | 1992-08-19 |
| JP3308560B2 true JP3308560B2 (ja) | 2002-07-29 |
Family
ID=6407540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15381091A Expired - Fee Related JP3308560B2 (ja) | 1990-05-31 | 1991-05-30 | 単一層コンデンサーの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5160762A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0459575B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP3308560B2 (cg-RX-API-DMAC7.html) |
| DE (2) | DE4017518A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5620739A (en) * | 1991-02-25 | 1997-04-15 | Symetrix Corporation | Thin film capacitors on gallium arsenide substrate and process for making the same |
| US6007868A (en) * | 1991-08-28 | 1999-12-28 | U.S. Philips Corporation | Method of manufacturing ferroelectric bismuth-titanate layers on a substrate from solution |
| JP3235145B2 (ja) * | 1991-11-01 | 2001-12-04 | 株式会社村田製作所 | チタン酸バリウム薄膜の形成方法 |
| JP3235148B2 (ja) * | 1991-11-21 | 2001-12-04 | 株式会社村田製作所 | チタン酸ストロンチウム薄膜の形成方法 |
| US5614018A (en) * | 1991-12-13 | 1997-03-25 | Symetrix Corporation | Integrated circuit capacitors and process for making the same |
| US5723361A (en) * | 1991-12-13 | 1998-03-03 | Symetrix Corporation | Thin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same |
| US5271955A (en) * | 1992-04-06 | 1993-12-21 | Motorola, Inc. | Method for making a semiconductor device having an anhydrous ferroelectric thin film |
| JP3225583B2 (ja) * | 1992-04-10 | 2001-11-05 | 株式会社村田製作所 | チタン酸バリウム薄膜形成方法 |
| US6133050A (en) * | 1992-10-23 | 2000-10-17 | Symetrix Corporation | UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue |
| US6327135B1 (en) | 1992-12-18 | 2001-12-04 | Symetrix Corp | Thin film capacitors on gallium arsenide substrate |
| US6447838B1 (en) * | 1993-12-10 | 2002-09-10 | Symetrix Corporation | Integrated circuit capacitors with barrier layer and process for making the same |
| KR100252744B1 (ko) * | 1994-07-05 | 2000-05-01 | 모리 가즈히로 | 과잉의 A사이트와 B사이트 개질제(modifier)를 가진 ABO₃의 박막 및 그 박막을 가진 집적회로의 제조방법 |
| US5453908A (en) * | 1994-09-30 | 1995-09-26 | Texas Instruments Incorporated | Barium strontium titanate (BST) thin films by holmium donor doping |
| US6331325B1 (en) * | 1994-09-30 | 2001-12-18 | Texas Instruments Incorporated | Barium strontium titanate (BST) thin films using boron |
| AU3632697A (en) | 1996-08-12 | 1998-03-06 | Energenius, Inc. | Semiconductor supercapacitor system, method for making same and articles produced therefrom |
| KR100227070B1 (ko) * | 1996-11-04 | 1999-10-15 | 구본준 | 커패시터 및 그의 제조방법 |
| US6432472B1 (en) | 1997-08-15 | 2002-08-13 | Energenius, Inc. | Method of making semiconductor supercapacitor system and articles produced therefrom |
| WO2004028973A1 (en) * | 2002-09-25 | 2004-04-08 | Koninklijke Philips Electronics N.V. | Process to produce solutions to be used as coating in photo-catalytic and transparent films |
| DE102004005082B4 (de) * | 2004-02-02 | 2006-03-02 | Infineon Technologies Ag | Kondensator mit einem Dielektrikum aus einer selbstorganisierten Monoschicht einer organischen Verbindung und Verfahren zu dessen Herstellung |
| US20060000542A1 (en) * | 2004-06-30 | 2006-01-05 | Yongki Min | Metal oxide ceramic thin film on base metal electrode |
| US7290315B2 (en) * | 2004-10-21 | 2007-11-06 | Intel Corporation | Method for making a passive device structure |
| US20060099803A1 (en) * | 2004-10-26 | 2006-05-11 | Yongki Min | Thin film capacitor |
| US20060091495A1 (en) * | 2004-10-29 | 2006-05-04 | Palanduz Cengiz A | Ceramic thin film on base metal electrode |
| US7629269B2 (en) * | 2005-03-31 | 2009-12-08 | Intel Corporation | High-k thin film grain size control |
| US20060220177A1 (en) * | 2005-03-31 | 2006-10-05 | Palanduz Cengiz A | Reduced porosity high-k thin film mixed grains for thin film capacitor applications |
| US7375412B1 (en) | 2005-03-31 | 2008-05-20 | Intel Corporation | iTFC with optimized C(T) |
| US7453144B2 (en) * | 2005-06-29 | 2008-11-18 | Intel Corporation | Thin film capacitors and methods of making the same |
| JP2008294319A (ja) * | 2007-05-28 | 2008-12-04 | Nec Corp | 薄膜キャパシタの製造方法 |
| DE102010043748A1 (de) | 2010-11-11 | 2012-05-16 | Robert Bosch Gmbh | Verfahren zur Herstellung eines kapazitiven Speicherelements, Speicherelement und dessen Verwendung |
| WO2016003306A1 (ru) * | 2014-06-30 | 2016-01-07 | Общество С Ограниченной Ответственностью "Элемент 22" | Способ изготовления сегнетоэлектрических конденсаторов |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4485094A (en) * | 1983-01-28 | 1984-11-27 | Westinghouse Electric Corp. | Method of making ABO3 of the cubic perovskite structure |
| JPS59213660A (ja) * | 1983-05-13 | 1984-12-03 | 鐘淵化学工業株式会社 | 多孔性セラミツクス薄膜およびその製造法 |
| US4704299A (en) * | 1985-11-06 | 1987-11-03 | Battelle Memorial Institute | Process for low temperature curing of sol-gel thin films |
| ATE73739T1 (de) * | 1987-07-02 | 1992-04-15 | Mitsui Petrochemical Ind | Verfahren zur herstellung von bariumtitanaten. |
| US4963390A (en) * | 1988-10-05 | 1990-10-16 | The Aerospace Corporation | Metallo-organic solution deposition (MOSD) of transparent, crystalline ferroelectric films |
| US5006363A (en) * | 1988-12-08 | 1991-04-09 | Matsushita Electric Industries Co., Ltd. | Plasma assited MO-CVD of perooskite dalectric films |
-
1990
- 1990-05-31 DE DE4017518A patent/DE4017518A1/de not_active Withdrawn
-
1991
- 1991-05-27 EP EP91201240A patent/EP0459575B1/de not_active Expired - Lifetime
- 1991-05-27 DE DE59106928T patent/DE59106928D1/de not_active Expired - Fee Related
- 1991-05-29 US US07/706,822 patent/US5160762A/en not_active Expired - Lifetime
- 1991-05-30 JP JP15381091A patent/JP3308560B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE4017518A1 (de) | 1991-12-05 |
| EP0459575A2 (de) | 1991-12-04 |
| JPH04230011A (ja) | 1992-08-19 |
| EP0459575B1 (de) | 1995-11-22 |
| US5160762A (en) | 1992-11-03 |
| DE59106928D1 (de) | 1996-01-04 |
| EP0459575A3 (cg-RX-API-DMAC7.html) | 1994-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |