JP3282424B2 - Method of manufacturing rectangular thin film chip resistor - Google Patents
Method of manufacturing rectangular thin film chip resistorInfo
- Publication number
- JP3282424B2 JP3282424B2 JP00740895A JP740895A JP3282424B2 JP 3282424 B2 JP3282424 B2 JP 3282424B2 JP 00740895 A JP00740895 A JP 00740895A JP 740895 A JP740895 A JP 740895A JP 3282424 B2 JP3282424 B2 JP 3282424B2
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- JP
- Japan
- Prior art keywords
- thin film
- layer
- forming
- electrode
- conductive resin
- Prior art date
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- Non-Adjustable Resistors (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、一般的に電子回路に用
いられる角形薄膜チップ抵抗器の製造方法に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a rectangular thin-film chip resistor generally used for an electronic circuit.
【0002】[0002]
【従来の技術】近年、電子機器のダウンサイジング化に
伴い、その回路基板の実装密度を高めるため、搭載され
る電子部品に対する小形化への要求が高まっている。角
形チップ抵抗器に対しても小形化が進められるととも
に、高精度(抵抗値許容差、抵抗温度特性)かつ電流雑
音特性に優れた角形薄膜チップ抵抗器への要求が高まっ
ている。2. Description of the Related Art In recent years, with the downsizing of electronic devices, there has been an increasing demand for smaller electronic components to be mounted in order to increase the mounting density of circuit boards. Along with the miniaturization of square chip resistors, the demand for square thin film chip resistors having high accuracy (resistance tolerance, resistance temperature characteristics) and excellent current noise characteristics is increasing.
【0003】従来の角形薄膜チップ抵抗器の構造を図3
の断面図、その製造方法を図4の工程図に示す。FIG. 3 shows the structure of a conventional rectangular thin film chip resistor.
4 is a cross-sectional view, and a manufacturing method thereof is shown in the process chart of FIG.
【0004】図3において、従来の角形薄膜チップ抵抗
器は、方形の96%アルミナ基板11の表面上の端部に
形成したAuから成る一対の薄膜上面電極層12と、裏
面上の端部に形成した、同じくAuから成る一対の薄膜
裏面電極層13と、この一対の薄膜上面電極層12を覆
い、かつ薄膜上面電極層12間に形成したNi−Cr合
金から成る薄膜抵抗体層14と、この薄膜抵抗体層14
を完全に覆うエポキシ系樹脂保護膜層15と、一対の薄
膜上面電極層12上に露出した薄膜抵抗体層14を覆い
かつ樹脂保護膜層15の両端の一部に重なるように形成
した一対の導体樹脂上面電極層16と、導体樹脂上面電
極層16と薄膜裏面電極層13を接続するように96%
アルミナ基板11の両端部にそれぞれ形成した一対の薄
膜端面電極層17と、露出した電極部に形成したニッケ
ルおよびはんだによる電極めっき層18とから構成され
る。Referring to FIG. 3, a conventional rectangular thin film chip resistor includes a pair of thin film upper electrode layers 12 made of Au formed at the ends on the surface of a square 96% alumina substrate 11 and the ends on the back surface. A pair of formed thin film back electrode layers 13 also made of Au, a thin film resistor layer 14 made of a Ni—Cr alloy, which covers the pair of thin film top electrode layers 12 and is formed between the thin film top electrode layers 12; This thin film resistor layer 14
And a pair of epoxy resin protective film layers 15 that completely cover the thin film resistor layers 14 exposed on the pair of thin film upper electrode layers 12 and partially overlap both ends of the resin protective film layers 15. The conductive resin upper electrode layer 16 and the conductive resin upper electrode layer 16 and the thin film rear electrode layer 13 are connected by 96%
It comprises a pair of thin-film end face electrode layers 17 formed on both ends of the alumina substrate 11, respectively, and an electrode plating layer 18 of nickel and solder formed on exposed electrode portions.
【0005】次に図4により従来の角形薄膜チップ抵抗
器の製造工程を説明する。まず、96%アルミナからな
る絶縁基板11を用意する。次に、96%アルミナ基板
11の表面および裏面にAuを主成分とする金属有機物
からなる電極ペーストをスクリーン印刷・乾燥した後、
金属有機物電極ペーストの有機成分だけを飛ばし、金属
成分だけをアルミナ基板11上に焼き付けるために、ベ
ルト式連続焼成炉によって焼成し、薄膜上面電極層12
及び薄膜裏面電極層13を形成する工程を行う。Next, the manufacturing process of a conventional rectangular thin film chip resistor will be described with reference to FIG. First, an insulating substrate 11 made of 96% alumina is prepared. Next, after an electrode paste composed of a metal organic material containing Au as a main component is screen-printed and dried on the front and back surfaces of the 96% alumina substrate 11,
In order to remove only the organic components of the metal organic electrode paste and bake only the metal components onto the alumina substrate 11, the paste is fired by a belt-type continuous firing furnace, and the thin film upper electrode layer 12 is fired.
Then, a step of forming the thin film back electrode layer 13 is performed.
【0006】次に、絶縁基板11の表面上全体にNi−
Cr等の薄膜抵抗体層14を形成するスパッタ工程を行
い、前記薄膜抵抗体層を所定の抵抗パターン14aに形
成するフォトリソプロセス工程(レジスト塗布・乾燥、
露光、現像、エッチング、レジスト剥離)を行い、抵抗
パターン14aを安定な膜にするために、350〜40
0℃雰囲気での熱処理工程を行う。[0006] Next, Ni-
A photolithography process (a resist coating / drying process) for performing a sputtering process for forming a thin film resistor layer 14 of Cr or the like and forming the thin film resistor layer in a predetermined resistance pattern 14a
(Exposure, development, etching, resist stripping) to form a stable film of the resistance pattern 14a.
A heat treatment process is performed in a 0 ° C. atmosphere.
【0007】その後、抵抗パターンの抵抗値を所定の値
に修正するためにレーザートリミングにより、抵抗値修
正工程を行う。After that, a resistance value correcting step is performed by laser trimming to correct the resistance value of the resistance pattern to a predetermined value.
【0008】次に、抵抗値修正済み抵抗パターン14b
を保護するために、熱硬化性の樹脂による樹脂保護膜層
15の形成工程を行う。次に、薄膜上面電極層12上の
樹脂保護膜層15に覆われていない抵抗値修正済み抵抗
パターン14bを覆い、かつ樹脂保護膜層15の両端に
重なるように、熱硬化性の導電樹脂から成る導体樹脂上
面電極層16の形成工程を行う。Next, the resistance value corrected resistance pattern 14b
Is formed, a step of forming a resin protective film layer 15 of a thermosetting resin is performed. Next, a thermosetting conductive resin is used to cover the resistance-corrected resistance pattern 14b that is not covered by the resin protective film layer 15 on the thin film upper electrode layer 12 and to overlap both ends of the resin protective film layer 15. The step of forming the conductive resin upper surface electrode layer 16 is performed.
【0009】次に、絶縁基板11の端面にスパッタを用
い、薄膜端面電極層17を形成する端面電極形成工程を
行う。Next, an end face electrode forming step of forming a thin film end face electrode layer 17 is performed by using sputtering on the end face of the insulating substrate 11.
【0010】最後に、はんだ付け時の信頼性の確保のた
め露出した電極部に電極めっき層18を形成する電極め
っき工程を行い、角形薄膜チップ抵抗器を形成してい
た。[0010] Finally, an electrode plating step of forming an electrode plating layer 18 on the exposed electrode portion to ensure reliability at the time of soldering was performed to form a rectangular thin film chip resistor.
【0011】[0011]
【発明が解決しようとする課題】しかしながら、従来の
薄膜チップ抵抗器の製造方法では、裏面電極を形成後に
抵抗体形成を行うために、裏面電極材料が限定されてい
た。すなわち、抵抗体パターン形成のフォトリソプロセ
ス工程で行うエッチングで、エッチング液(強酸性)に
浸漬されるため、従来例のようにエッチング液に浸され
ない金系の薄膜電極を採用したり、あるいは銅、ニクロ
ム系の薄膜電極をスパッタ形成後フォトリソプロセスに
よりパターン形成することにより、裏面電極層を構成し
ていた。このため、金を使用する場合には設備コストは
高価ではないが材料コストが高くなり、銅、ニクロム系
を使用する場合には設備コストならびに工数が高くな
り、製造原価を低減することが難しいという課題があっ
た。However, in the conventional method of manufacturing a thin film chip resistor, the material of the back electrode is limited because the resistor is formed after the back electrode is formed. That is, in the etching performed in the photolithography process step of forming the resistor pattern, the substrate is immersed in an etching solution (strongly acidic). A back electrode layer is formed by patterning a Nichrome thin film electrode by a photolithography process after forming a sputter. For this reason, when gold is used, the equipment cost is not expensive, but the material cost is high, and when copper or nichrome is used, the equipment cost and man-hours are high, and it is difficult to reduce the manufacturing cost. There were challenges.
【0012】本発明は上記課題を解決するために、安価
な角形薄膜チップ抵抗器を提供することを目的とする。An object of the present invention is to provide an inexpensive rectangular thin film chip resistor in order to solve the above problems.
【0013】[0013]
【課題を解決するための手段】前記目的を達成するため
に本発明の角形薄膜チップ抵抗器の製造方法は、方形の
絶縁基板の主面上に一対の薄膜上面電極層を形成する工
程と、前記一対の薄膜上面電極層それぞれに重なり、か
つ前記絶縁基板の主面上の前記薄膜上面電極層間に薄膜
抵抗体層を形成する工程と、前記薄膜抵抗体層を完全に
覆う樹脂保護膜層を形成する工程と、前記一対の薄膜上
面電極層を覆いかつ前記樹脂保護膜層の両端の一部に重
なる一対の導体樹脂上面電極層を形成する工程と、前記
絶縁基板の裏面上に一対の導体樹脂裏面電極層を形成す
る工程と、前記絶縁基板の両端部に前記導体樹脂上面電
極層および前記導体樹脂裏面電極層と接続するよう一対
の薄膜端面電極層を形成する工程と、露出した前記導体
樹脂上面電極層および前記導体樹脂裏面電極層および前
記薄膜端面電極層を覆うように電極めっき層を形成する
工程とを備え、前記導体樹脂裏面電極層は、前記薄膜抵
抗体層を形成した後に形成することを特徴とするもので
ある。According to the present invention, there is provided a method of manufacturing a rectangular thin film chip resistor, comprising: forming a pair of thin film upper electrode layers on a main surface of a rectangular insulating substrate; Forming a thin film resistor layer between the pair of thin film upper electrode layers and between the thin film upper electrode layers on the main surface of the insulating substrate, and a resin protective film layer completely covering the thin film resistor layer. Forming, forming a pair of conductive resin upper electrode layers covering the pair of thin film upper electrode layers and partially overlapping both ends of the resin protective film layer, and forming a pair of conductors on a back surface of the insulating substrate. A step of forming a resin back electrode layer; a step of forming a pair of thin film end electrode layers at both ends of the insulating substrate so as to be connected to the conductor resin top electrode layer and the conductor resin back electrode layer; Resin top electrode layer Forming an electrode plating layer so as to cover the conductive resin back electrode layer and the thin film end face electrode layer, wherein the conductive resin back electrode layer is formed after forming the thin film resistor layer. It is assumed that.
【0014】[0014]
【作用】本発明によれば、抵抗体形成後に裏面電極を形
成するため、抵抗体パターン形成のフォトリソプロセス
工程で行うエッチング処理で、裏面電極がエッチング液
(強酸性)に浸漬されて浸されることがないことから、
裏面電極材料は限定されない。したがって、裏面電極を
従来からの、スクリーン印刷法により、通常使用されて
いる導体樹脂銀ペーストを使用して形成できるため、材
料コストおよび工数および設備コストを低減することが
できることとなり、安価な角形薄膜チップ抵抗器を実現
できる。According to the present invention, in order to form the back surface electrode after the formation of the resistor, the back surface electrode is immersed in an etching solution (strongly acidic) in the etching process performed in the photolithography process step of forming the resistor pattern. Because there is nothing
The back electrode material is not limited. Therefore, since the back electrode can be formed by a conventional screen printing method using a commonly used conductive resin silver paste, material costs, man-hours and equipment costs can be reduced, and an inexpensive rectangular thin film can be formed. A chip resistor can be realized.
【0015】[0015]
【実施例】以下、本発明の一実施例の角形薄膜チップ抵
抗器およびその製造方法について、図面を用いて説明す
る。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a rectangular thin film chip resistor according to an embodiment of the present invention;
【0016】図1は本発明の一実施例の角形薄膜チップ
抵抗器の断面図で、図2はその製造方法を示す工程図で
ある。FIG. 1 is a sectional view of a rectangular thin film chip resistor according to one embodiment of the present invention, and FIG. 2 is a process chart showing a method of manufacturing the same.
【0017】まず、図1により製品の構造を説明する。
図1において、方形の96%アルミナ基板1の表面上に
形成したAuによる一対の薄膜上面電極層2と、裏面上
に形成した銀を導電成分とする厚膜導体樹脂による一対
の導体樹脂裏面電極層3と、この一対の薄膜上面電極層
2を覆い、かつ薄膜上面電極層2間に形成したNi−C
r合金による薄膜抵抗体層4と、この薄膜抵抗体層4を
完全に覆うエポキシ系樹脂保護膜層5と、一対の薄膜上
面電極層2上に露出した薄膜抵抗体層4を覆いかつ樹脂
保護膜層5の両端の一部に重なるように形成した一対の
導体樹脂上面電極層6と、導体樹脂上面電極層6と導体
樹脂裏面電極層3を接続するように96%アルミナ基板
1の両端部にそれぞれ形成した一対の薄膜端面電極層7
と、上記各電極層のうち、露出した電極層上に形成した
ニッケルおよびはんだによる電極めっき層8とから構成
される。First, the structure of a product will be described with reference to FIG.
In FIG. 1, a pair of thin film upper electrode layers 2 made of Au formed on the surface of a square 96% alumina substrate 1 and a pair of conductive resin back electrodes made of a thick film conductive resin containing silver as a conductive component formed on the back surface. Layer 3 and a Ni-C layer that covers the pair of thin film upper electrode layers 2 and is formed between the thin film upper electrode layers 2.
a thin film resistor layer 4 made of an r alloy, an epoxy-based resin protective film layer 5 that completely covers the thin film resistor layer 4, and a thin film resistor layer 4 that is exposed on a pair of thin film upper electrode layers 2 and is covered with a resin. A pair of conductive resin upper electrode layers 6 formed so as to partially overlap both ends of the film layer 5, and both ends of the 96% alumina substrate 1 so as to connect the conductive resin upper electrode layer 6 and the conductive resin back electrode layer 3. A pair of thin-film end face electrode layers 7 formed respectively
And an electrode plating layer 8 of nickel and solder formed on the exposed electrode layer among the above electrode layers.
【0018】次に、図2により製造方法について説明す
る。まず、耐熱性及び絶縁性に優れた96%アルミナ基
板1を用意する工程Aを行う。次に、96%アルミナ基
板1の表面にAuを主成分とする金属有機物からなる電
極ペーストをスクリーン印刷・乾燥した後、有機成分を
飛ばして金属成分だけを96%アルミナ基板1上に焼き
付けるために、ベルト式連続焼成炉によって850℃の
温度で、ピーク時間6分、IN−OUT時間45分のプ
ロファイルによって焼成することにより、薄膜上面電極
層2を形成する工程Bを行う。Next, the manufacturing method will be described with reference to FIG. First, a step A of preparing a 96% alumina substrate 1 having excellent heat resistance and insulation properties is performed. Next, after an electrode paste composed of a metal organic material containing Au as a main component is screen-printed and dried on the surface of the 96% alumina substrate 1, the organic components are skipped to bake only the metal components on the 96% alumina substrate 1. The step B of forming the thin film upper surface electrode layer 2 is performed by baking at a temperature of 850 ° C. with a profile of a peak time of 6 minutes and an IN-OUT time of 45 minutes in a belt-type continuous firing furnace.
【0019】次に96%アルミナ基板1上にNi−Cr
の薄膜抵抗体層4を形成するスパッタ工程Cを経て、薄
膜抵抗体層4を所定の抵抗パターン4aに形成するフォ
トリソプロセス工程D(レジスト塗布・乾燥、露光、現
像、エッチング、レジスト剥離)を行い、抵抗パターン
4aを安定な膜にするために、350〜400℃の温度
雰囲気での熱処理工程Eを行う。Next, Ni-Cr is placed on a 96% alumina substrate 1.
And a photolithography process D (resist coating / drying, exposure, development, etching, resist peeling) for forming the thin film resistor layer 4 into a predetermined resistance pattern 4a through the sputtering process C for forming the thin film resistor layer 4 of FIG. In order to make the resistance pattern 4a a stable film, a heat treatment step E in a temperature atmosphere of 350 to 400 ° C. is performed.
【0020】その後、抵抗パターン4aの抵抗値を所定
の値に修正するためにレーザートリミングによる抵抗値
修正工程Fを行う。Thereafter, a resistance value correcting step F by laser trimming is performed to correct the resistance value of the resistance pattern 4a to a predetermined value.
【0021】次に、抵抗値修正済み抵抗パターン4bを
保護するために、樹脂ペーストをスクリーン印刷し、2
00℃・30分のプロファイルにて熱硬化して樹脂保護
膜層5を形成する工程Gを行う。Next, a resin paste is screen-printed to protect the resistance-corrected resistance pattern 4b.
Step G of forming a resin protective film layer 5 by thermosetting with a profile of 00 ° C. for 30 minutes is performed.
【0022】次に、樹脂保護膜層5に覆われていない、
薄膜上面電極層2上の抵抗値修正済みの抵抗パターン4
bを覆い、かつ樹脂保護膜層5の両端の一部に重なるよ
うに、銀を導電金属材料として含有する導電樹脂ペース
トをスクリーン印刷し、200℃・30分のプロファイ
ルにて熱硬化して導体樹脂上面電極層6を形成する工程
Hを行う。Next, it is not covered with the resin protective film layer 5,
Resistance pattern 4 with corrected resistance on thin film upper electrode layer 2
(b) is screen-printed with a conductive resin paste containing silver as a conductive metal material so as to cover part of both ends of the resin protective film layer 5 and thermally cured at a profile of 200 ° C. for 30 minutes. Step H of forming the resin upper electrode layer 6 is performed.
【0023】次に、96%アルミナ基板の裏面の導体樹
脂上面電極層6と対向する位置に、銀を導電金属材料と
して含有する導電樹脂ペーストをスクリーン印刷し、2
00℃・30分のプロファイルにて熱硬化して導体樹脂
裏面電極層3を形成する工程Iを行う。このように、樹
脂保護膜層5を形成した後に、導体樹脂裏面電極層3を
形成することにより、薄膜抵抗体層4の導電樹脂ペース
ト等からの汚れや損傷を防ぐことができる。なお、本実
施例では、抵抗体形成後に、裏面電極として導体樹脂裏
面電極を形成するために、耐エッチング液性を問わない
ので、裏面電極材料が限定されず、したがって、従来か
らのスクリーン印刷法を用いて、従来から一般に使用さ
れている導体樹脂銀ペーストを使用できるため、材料コ
ストおよび設備コストおよび工数を低減することができ
る。Next, a conductive resin paste containing silver as a conductive metal material is screen-printed on a position opposite to the conductive resin upper electrode layer 6 on the back surface of the 96% alumina substrate, and is subjected to screen printing.
Step I of forming the conductor resin back surface electrode layer 3 by thermosetting with a profile of 00 ° C. for 30 minutes is performed. By forming the conductive resin back electrode layer 3 after the formation of the resin protective film layer 5 in this manner, it is possible to prevent the thin film resistor layer 4 from being stained or damaged from the conductive resin paste or the like. In the present embodiment, since the conductive resin back electrode is formed as the back electrode after the resistor is formed, the resistance to the etchant is not limited. Therefore, the material of the back electrode is not limited. In this case, the conductive resin silver paste generally used conventionally can be used, so that material cost, equipment cost and man-hour can be reduced.
【0024】次に、96%アルミナ基板1の端面にスパ
ッタによりNi−Cr系の薄膜端面電極層7を形成する
端面電極形成工程Jを行う。Next, an end face electrode forming step J of forming a Ni—Cr thin film end face electrode layer 7 on the end face of the 96% alumina substrate 1 by sputtering is performed.
【0025】最後に、露出している導体樹脂裏面電極層
3と導体樹脂上面電極層6と薄膜端面電極層7のはんだ
付け時の電極食われの防止およびはんだ付け時の信頼性
の確保のため、電気めっきによってNiおよびSn−P
bからなる電極めっき層8を形成する電極めっき工程K
を行う。Lastly, in order to prevent electrode erosion at the time of soldering of the exposed conductive resin back electrode layer 3, conductive resin upper electrode layer 6, and thin-film end electrode layer 7, and to ensure reliability during soldering. Ni and Sn-P by electroplating
electrode plating step K for forming electrode plating layer 8 consisting of b
I do.
【0026】以上の工程により、本実施例による角形薄
膜チップ抵抗器を試作した。このような本実施例の角形
薄膜チップ抵抗器と、従来の角形薄膜チップ抵抗器とを
比較したところ、電極強度は同等であった。Through the steps described above, a square thin film chip resistor according to the present embodiment was experimentally manufactured. Comparing such a rectangular thin-film chip resistor of this example with a conventional rectangular thin-film chip resistor, the electrode strength was the same.
【0027】なお、本実施例では、導体樹脂電極層を銀
系の樹脂材料により形成したが、銀系の材料に規定され
るものではなく、銅、金等の電極材料として使用され得
るものはすべて同様の効果が得られることはいうまでも
ない。In this embodiment, the conductive resin electrode layer is formed of a silver-based resin material. However, the conductive resin electrode layer is not limited to the silver-based material, but may be used as an electrode material such as copper or gold. It goes without saying that the same effect can be obtained in all cases.
【0028】さらに本実施例では、導体樹脂裏面電極層
を導体樹脂上面電極層の後に形成したが、この工程順序
はどちらが先でもかまわない。Further, in the present embodiment, the conductor resin back surface electrode layer is formed after the conductor resin top electrode layer, but the order of the steps may be any.
【0029】[0029]
【発明の効果】以上のように本発明によれば、抵抗体形
成後に裏面電極を形成するために、裏面電極材料が限定
されない。したがって下記(1),(2)の効果が得ら
れ、安価に角形薄膜チップ抵抗器を実現できる。As described above, according to the present invention, since the back electrode is formed after the resistor is formed, the material of the back electrode is not limited. Therefore, the following effects (1) and (2) can be obtained, and a rectangular thin film chip resistor can be realized at low cost.
【0030】(1)スクリーン印刷法により形成できる
ため、フォトリソ法(スパッタ、露光、現像、エッチン
グ)よりも設備コストおよび工数を低減できる。(1) Since it can be formed by a screen printing method, equipment costs and man-hours can be reduced as compared with the photolithography method (sputtering, exposure, development, etching).
【0031】(2)通常大量に使用されている導体樹脂
銀ペーストを使用できるため、材料コストを低減でき
る。また、ペーストを印刷後200℃程度で硬化して裏
面電極層を形成するため、従来の高温焼成(850℃程
度)に比べ電力消費を低減できる。(2) Since the conductive resin silver paste which is generally used in large quantities can be used, the material cost can be reduced. In addition, since the paste is cured at about 200 ° C. after printing to form the back electrode layer, power consumption can be reduced as compared with conventional high-temperature baking (about 850 ° C.).
【0032】また、従来は薄膜で裏面電極を形成してい
たために、基板をたんざく状に一次分割する際に、分割
スリット付近の裏面電極にカケが発生していたが、裏面
電極を厚膜の導体樹脂電極層により形成することによ
り、一次分割時の分割治具との接触によるショック吸収
の機能を持たせることができ、裏面電極のカケを防止す
ることができ高信頼性を有する角形薄膜チップ抵抗器を
実現することができる。Conventionally, since the back electrode is formed of a thin film, when the substrate is firstly divided into pieces, chipping occurs on the back electrode near the dividing slit. By forming the conductive resin electrode layer of the above, it is possible to have a function of absorbing shock due to contact with the dividing jig at the time of primary division, prevent chipping of the back electrode, and have a highly reliable square thin film A chip resistor can be realized.
【図1】本発明の一実施例の角形薄膜チップ抵抗器の構
造を示す断面図FIG. 1 is a sectional view showing the structure of a rectangular thin film chip resistor according to one embodiment of the present invention.
【図2】同角形薄膜チップ抵抗器の製造方法を示す工程
図FIG. 2 is a process chart showing a method for manufacturing a conformal thin film chip resistor.
【図3】従来の角形薄膜チップ抵抗器の構造を示す断面
図FIG. 3 is a sectional view showing the structure of a conventional rectangular thin film chip resistor.
【図4】同角形薄膜チップ抵抗器の製造方法を示す工程
図FIG. 4 is a process chart showing a method for manufacturing a conformal thin film chip resistor.
1 96%アルミナ基板 2 薄膜上面電極層 3 導体樹脂裏面電極層 4 薄膜抵抗体層 5 樹脂保護膜層 6 導体樹脂上面電極層 7 薄膜端面電極層 8 電極めっき層 Reference Signs List 1 96% alumina substrate 2 Thin film top electrode layer 3 Conductive resin back electrode layer 4 Thin film resistor layer 5 Resin protective film layer 6 Conductive resin top electrode layer 7 Thin film end face electrode layer 8 Electrode plating layer
Claims (2)
面電極層を形成する工程と、前記一対の薄膜上面電極層
それぞれに重なり、かつ前記絶縁基板の主面上の前記薄
膜上面電極層間に薄膜抵抗体層を形成する工程と、前記
薄膜抵抗体層を完全に覆う樹脂保護膜層を形成する工程
と、前記一対の薄膜上面電極層を覆いかつ前記樹脂保護
膜層の両端の一部に重なる一対の導体樹脂上面電極層を
形成する工程と、絶縁基板の裏面上に一対の導体樹脂裏
面電極層を形成する工程と、前記絶縁基板の両端部に前
記導体樹脂上面電極層および前記導体樹脂裏面電極層と
接続するように一対の薄膜端面電極層を形成する工程
と、露出した前記導体樹脂上面電極層および前記導体樹
脂裏面電極層および前記薄膜端面電極層を覆うように電
極めっき層を形成する工程とを備え、前記導体樹脂裏面
電極層は、前記薄膜抵抗体層を形成した後に形成するこ
とを特徴とする角形薄膜チップ抵抗器の製造方法。1. A step of forming a pair of thin film upper electrode layers on a main surface of a rectangular insulating substrate, and said thin film upper electrode on each of said pair of thin film upper electrode layers and on a main surface of said insulating substrate. Forming a thin film resistor layer between the layers, forming a resin protective film layer that completely covers the thin film resistor layer, and covering one end of the resin protective film layer while covering the pair of thin film upper electrode layers. Forming a pair of conductive resin upper surface electrode layers overlapping the portion; forming a pair of conductive resin back electrode layers on the back surface of the insulating substrate; and forming the conductive resin upper surface electrode layer and the Forming a pair of thin-film end face electrode layers so as to be connected to the conductive resin back electrode layer; and forming an electrode plating layer so as to cover the exposed conductive resin top electrode layer, the conductive resin back electrode layer, and the thin-film end electrode layer. Form And forming the conductive resin back surface electrode layer after forming the thin film resistor layer.
した後に、導体樹脂裏面電極層を形成することを特徴と
する請求項1記載の角形薄膜チップ抵抗器の製造方法。2. The method for manufacturing a rectangular thin film chip resistor according to claim 1, wherein after forming a resin protective film layer covering the thin film resistor layer, a conductive resin back electrode layer is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00740895A JP3282424B2 (en) | 1995-01-20 | 1995-01-20 | Method of manufacturing rectangular thin film chip resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00740895A JP3282424B2 (en) | 1995-01-20 | 1995-01-20 | Method of manufacturing rectangular thin film chip resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08203713A JPH08203713A (en) | 1996-08-09 |
JP3282424B2 true JP3282424B2 (en) | 2002-05-13 |
Family
ID=11665051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP00740895A Expired - Lifetime JP3282424B2 (en) | 1995-01-20 | 1995-01-20 | Method of manufacturing rectangular thin film chip resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3282424B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7982582B2 (en) * | 2007-03-01 | 2011-07-19 | Vishay Intertechnology Inc. | Sulfuration resistant chip resistor and method for making same |
US9818512B2 (en) | 2014-12-08 | 2017-11-14 | Vishay Dale Electronics, Llc | Thermally sprayed thin film resistor and method of making |
-
1995
- 1995-01-20 JP JP00740895A patent/JP3282424B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH08203713A (en) | 1996-08-09 |
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