JP3228750B2 - スパッタエッチング制御用のプラズマ成形プラグ - Google Patents

スパッタエッチング制御用のプラズマ成形プラグ

Info

Publication number
JP3228750B2
JP3228750B2 JP52332294A JP52332294A JP3228750B2 JP 3228750 B2 JP3228750 B2 JP 3228750B2 JP 52332294 A JP52332294 A JP 52332294A JP 52332294 A JP52332294 A JP 52332294A JP 3228750 B2 JP3228750 B2 JP 3228750B2
Authority
JP
Japan
Prior art keywords
plasma
wafer
plug
selectively
wafer surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP52332294A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08508852A (ja
Inventor
ディー． ハーウィット，スチーブン
ヒエロニミ，ロバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPH08508852A publication Critical patent/JPH08508852A/ja
Application granted granted Critical
Publication of JP3228750B2 publication Critical patent/JP3228750B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP52332294A 1993-04-09 1994-04-08 スパッタエッチング制御用のプラズマ成形プラグ Expired - Lifetime JP3228750B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US045,368 1993-04-09
US08/045,368 1993-04-09
US08/045,368 US5391281A (en) 1993-04-09 1993-04-09 Plasma shaping plug for control of sputter etching
PCT/US1994/003866 WO1994024692A1 (en) 1993-04-09 1994-04-08 Plasma shaping plug for control of sputter etching

Publications (2)

Publication Number Publication Date
JPH08508852A JPH08508852A (ja) 1996-09-17
JP3228750B2 true JP3228750B2 (ja) 2001-11-12

Family

ID=21937490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52332294A Expired - Lifetime JP3228750B2 (ja) 1993-04-09 1994-04-08 スパッタエッチング制御用のプラズマ成形プラグ

Country Status (9)

Country Link
US (1) US5391281A (show.php)
EP (1) EP0694208B1 (show.php)
JP (1) JP3228750B2 (show.php)
KR (1) KR100318354B1 (show.php)
AU (1) AU6628994A (show.php)
CA (1) CA2159494A1 (show.php)
DE (1) DE69405722T2 (show.php)
TW (1) TW238405B (show.php)
WO (1) WO1994024692A1 (show.php)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH686254A5 (de) * 1992-07-27 1996-02-15 Balzers Hochvakuum Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination
JP4654176B2 (ja) * 1996-02-22 2011-03-16 住友精密工業株式会社 誘導結合プラズマ・リアクタ
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
US6271121B1 (en) 1997-02-10 2001-08-07 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US5906866A (en) * 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
JP4714309B2 (ja) 1998-12-11 2011-06-29 サーフィス テクノロジー システムズ ピーエルシー プラズマ加工装置
KR100430583B1 (ko) * 2001-12-20 2004-05-10 동부전자 주식회사 플라즈마 에칭 장비를 이용한 반도체 소자의 프로파일조절 방법
US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
US7557362B2 (en) * 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US8158016B2 (en) * 2004-02-04 2012-04-17 Veeco Instruments, Inc. Methods of operating an electromagnet of an ion source
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
US20070068795A1 (en) * 2005-09-26 2007-03-29 Jozef Brcka Hollow body plasma uniformity adjustment device and method
JP5486414B2 (ja) * 2010-06-08 2014-05-07 日本放送協会 プラズマエッチング装置
JP2014209406A (ja) * 2011-07-20 2014-11-06 キヤノンアネルバ株式会社 イオンビーム発生装置、およびイオンビームプラズマ処理装置
JP5774539B2 (ja) * 2012-04-16 2015-09-09 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング方法
JP5840268B1 (ja) 2014-08-25 2016-01-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
CN115376873A (zh) * 2021-05-18 2022-11-22 江苏鲁汶仪器有限公司 离子源装置及其使用方法和真空处理系统
KR20240016800A (ko) 2022-07-29 2024-02-06 삼성전자주식회사 플라즈마 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995022920A1 (en) 1994-02-28 1995-08-31 Alfredo De Benedictis Device and method for treatment of hair
US5997686A (en) 1992-07-27 1999-12-07 Tokyo Electron Limited Process for setting a working rate distribution in an etching or plasma CVD apparatus

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1624071A (en) * 1921-07-28 1927-04-12 Westinghouse Lamp Co Method of affixing coatings on incandescent-lamp filaments
US2103623A (en) * 1933-09-20 1937-12-28 Ion Corp Electron discharge device for electronically bombarding materials
US2305758A (en) * 1937-05-25 1942-12-22 Berghaus Bernhard Coating of articles by cathode disintegration
US2257411A (en) * 1937-11-30 1941-09-30 Berghaus Method of cathode disintegration
US2346483A (en) * 1942-08-07 1944-04-11 Gen Electric Chargeproof cover glass
US2463180A (en) * 1943-04-29 1949-03-01 Bell Telephone Labor Inc Method and apparatus for making mosaic targets for electron beams
US2843542A (en) * 1956-02-23 1958-07-15 George F Callahan Method and apparatus for producing improved abrading contours
US3100272A (en) * 1961-04-14 1963-08-06 Gen Mills Inc Low pressure mercury plasma discharge tube
US3233137A (en) * 1961-08-28 1966-02-01 Litton Systems Inc Method and apparatus for cleansing by ionic bombardment
GB1052029A (show.php) * 1962-09-20
US3329601A (en) * 1964-09-15 1967-07-04 Donald M Mattox Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial
US3458426A (en) * 1966-05-25 1969-07-29 Fabri Tek Inc Symmetrical sputtering apparatus with plasma confinement
DE1765850A1 (de) * 1967-11-10 1971-10-28 Euratom Verfahren und Vorrichtung zum Aufbringen von duennen Schichten
US3875028A (en) * 1972-08-30 1975-04-01 Picker Corp Method of manufacture of x-ray tube having focusing cup with non emitting coating
US4111782A (en) * 1974-12-23 1978-09-05 Telic Corporation Sputtering apparatus
US4342901A (en) * 1980-08-11 1982-08-03 Eaton Corporation Plasma etching electrode
JPS58157975A (ja) * 1982-03-10 1983-09-20 Tokyo Ohka Kogyo Co Ltd プラズマエツチング方法
DE3500328A1 (de) * 1985-01-07 1986-07-10 Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa Zerstaeubungsaetzvorrichtung
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
US4632719A (en) * 1985-09-18 1986-12-30 Varian Associates, Inc. Semiconductor etching apparatus with magnetic array and vertical shield
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
EP0343500B1 (en) * 1988-05-23 1994-01-19 Nippon Telegraph And Telephone Corporation Plasma etching apparatus
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
DE4118973C2 (de) * 1991-06-08 1999-02-04 Fraunhofer Ges Forschung Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997686A (en) 1992-07-27 1999-12-07 Tokyo Electron Limited Process for setting a working rate distribution in an etching or plasma CVD apparatus
WO1995022920A1 (en) 1994-02-28 1995-08-31 Alfredo De Benedictis Device and method for treatment of hair

Also Published As

Publication number Publication date
DE69405722T2 (de) 1998-01-08
TW238405B (show.php) 1995-01-11
EP0694208A1 (en) 1996-01-31
EP0694208B1 (en) 1997-09-17
AU6628994A (en) 1994-11-08
KR960702167A (ko) 1996-03-28
DE69405722D1 (de) 1997-10-23
KR100318354B1 (ko) 2002-04-22
US5391281A (en) 1995-02-21
CA2159494A1 (en) 1994-10-27
JPH08508852A (ja) 1996-09-17
WO1994024692A1 (en) 1994-10-27

Similar Documents

Publication Publication Date Title
JP3228750B2 (ja) スパッタエッチング制御用のプラズマ成形プラグ
JP4285853B2 (ja) 処理方法
US5308417A (en) Uniformity for magnetically enhanced plasma chambers
US5246532A (en) Plasma processing apparatus
US5312778A (en) Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
JP3653524B2 (ja) プラズマ発生方法、および誘導結合されたプラズマ発生源を含むプラズマ発生装置
JP2501948B2 (ja) プラズマ処理方法及びプラズマ処理装置
US6083363A (en) Apparatus and method for uniform, low-damage anisotropic plasma processing
KR100390540B1 (ko) 마그네트론 플라즈마 에칭장치
JP2002237489A (ja) 低周波誘導型高周波プラズマ反応装置
JPH0770532B2 (ja) プラズマ処理装置
US4943361A (en) Plasma treating method and apparatus therefor
KR20020027604A (ko) 마그네트론 플라즈마 처리 장치
JPWO2002021585A1 (ja) マグネトロンプラズマ用磁場発生装置、この磁場発生装置を用いたプラズマエッチング装置及び方法
JP2008028360A (ja) プラズマを用いたイオン注入装置
US6504159B1 (en) SOI plasma source ion implantation
JP2000323463A (ja) プラズマ処理方法
KR102017520B1 (ko) 저압형 플라즈마 투입 방식 이온주입기
JP2000317303A (ja) プラズマ処理装置及びこれを用いたプラズマ処理方法
JPH10256238A (ja) プラズマ処理方法及び装置
JPH10284298A (ja) プラズマ処理方法及び装置
JPH08195379A (ja) プラズマ処理方法及びプラズマ処理装置
JPH07263192A (ja) エッチング装置
JPH0620794A (ja) プラズマ発生装置およびプラズマ発生方法
JPH1145877A (ja) プラズマ処理方法及び装置

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100907

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130907

Year of fee payment: 12

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term