JP3194107U - 表示パネル - Google Patents
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- JP3194107U JP3194107U JP2014004523U JP2014004523U JP3194107U JP 3194107 U JP3194107 U JP 3194107U JP 2014004523 U JP2014004523 U JP 2014004523U JP 2014004523 U JP2014004523 U JP 2014004523U JP 3194107 U JP3194107 U JP 3194107U
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- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims description 12
- 230000007423 decrease Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 8
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
図2は、第1実施形態に係る表示パネルの導電層を示す部分側面図である。実施形態において、第2導電層の線幅変化を例示したが、本考案は、これに限らず、他の導電層を、本実施形態の精神を逸脱しない範囲で選択して実施できることは、言うまでもない。なお、添付図面においては、本考案の実施形態を容易に理解するため、当業者が本考案の技術上の意義を十分に理解できるよう、関連する要素を簡略に示す。
図4は、第2の実施形態に係る表示パネルの導電層を示す部分側面図である。第2実施例においても第1実施形態のように、第1導電層111’の上方に通過する第2導電層113’の線幅変化を例示して説明するが、本考案は、これに限らない。
図6は、第3の実施形態に係る表示パネルの導電層を示す部分平面図である。第3実施形態において、第2導電層M2がゲートラインGate(gate line)及びコモンラインCom(common line)の上方を通過することを例示するが、本考案は、図6に示す態様に限らない。実際の応用の条件に応じて適宜に変更及び調整してもよい。
110 第1基材
111、111’、M1 第1導電層
112 絶縁層
113、113’、M2 第2導電層
114 第1中間層
115 第1透明導電層
12 第2基板
120 第2基材
123 カラーフォトレジスト層
125 第2透明導電層
13 液晶層
131 液晶分子
14a 第1偏光板
14b 第2偏光板
D1 第1方向
D2 第2方向
H1 第1高さ
H2 第2高さ
P1 第1平面
P2 第2平面
S 傾斜面
W1 第1線幅
W2 第2線幅
W3 第3線幅
W4 第4線幅
O1 第1部分
O2 第2部分
L1 第1辺
L2 第2辺
E1 第1エッジ
E2 境界
A1 第1線幅変化領域
A2 第2線幅変化領域
Claims (19)
- 表示パネルであって、
第1基板と、第2基板と、表示層とを含み、
前記第1基板は導電層を含み、前記導電層は、基材上に設けられ、第1方向に沿って延伸し、第1方向に沿って、第1高さを有する第1平面と、傾斜面と、第2高さを有する第2平面とを含み、前記第1高さが前記第2高さより高く、
前記第2基板は、前記第1基板に対向して配置され、
前記表示層は、前記第1基板と前記第2基板との間に位置し、
前記導電層は、第2方向に沿って、前記第1平面の前記傾斜面に近い位置に第1線幅を有し、前記傾斜面に第2線幅を有し、前記第2方向が前記第1方向に垂直であり、前記第1線幅が前記第2線幅より小さいことを特徴とする表示パネル。 - 前記第2方向に沿って、前記第1平面の前記傾斜面から離れた位置に第3線幅を有し、前記第3線幅が前記第1線幅より小さいことを特徴とする請求項1に記載の表示パネル。
- 前記第2方向に沿って、前記第2平面の前記傾斜面から離れた位置に第4線幅を有し、前記第4線幅が前記第2線幅より小さいことを特徴とする請求項1に記載の表示パネル。
- 前記導電層の前記傾斜面には、変化する線幅分布を有し、かつ前記変化する線幅分布は、前記第1平面から前記第2平面に向かって徐々に増加することを特徴とする請求項1に記載の表示パネル。
- 前記導電層の前記第1平面の前記傾斜面に近い位置には、第1線幅変化領域を有し、前記第1線幅変化領域は、前記傾斜面に向かって徐々に増加する線幅分布を有することを特徴とする請求項1に記載の表示パネル。
- 前記第1線幅変化領域は、前記第1線幅を含むことを特徴とする請求項5に記載の表示パネル。
- 前記第1線幅変化領域における最大線幅は、前記導電層の前記傾斜面におけるいずれの線幅以下であることを特徴とする請求項5に記載の表示パネル。
- 前記第1線幅変化領域における最大線幅は、前記導電層の前記第2平面におけるいずれの線幅よりも小さいことを特徴とする請求項5に記載の表示パネル。
- 前記導電層の前記第2平面の前記傾斜面に近い位置には、第2線幅変化領域を有し、前記第2線幅変化領域は、前記傾斜面から離れて徐々に減少する線幅分布を有することを特徴とする請求項1に記載の表示パネル。
- 前記第2線幅変化領域における最小線幅は、前記導電層の前記第1平面におけるいずれの線幅よりも大きいことを特徴とする請求項9に記載の表示パネル。
- 表示パネルであって、
第1基板と、第2基板と、表示層とを含み、
前記第1基板は、基材と、第1導電層と、第2導電層とを含み、
前記第1導電層は、前記基材の上方に設けられ、第2方向に沿って延伸し、
前記第2導電層は、前記第1導電層の上方に位置し、第1方向に沿って延伸するとともに、前記第1導電層に重なる第1部分と、前記第1導電層と重ならない第2部分と、前記第1部分と前記第2部分とを接続する境界とを有し、
前記第1部分は、前記境界において、前記第2方向に沿う第1幅を有し、前記第2部分は、前記境界において、前記第2方向に沿う第2幅を有し、前記第1幅が前記第2幅より小さく、
前記第2基板は、前記第1基板に対向して配置され、
前記表示層は、前記第1基板と前記第2基板との間に位置することを特徴とする表示パネル。 - 前記第1導電層は、前記第2方向に第1エッジを有し、前記境界は、前記第1エッジの外側に位置することを特徴とする請求項11に記載の表示パネル。
- 前記第2導電層は、前記第1部分の中間点において前記第2方向に沿う第3幅を有し、前記第3幅が前記第1幅より小さいことを特徴とする請求項11に記載の表示パネル。
- 前記第2導電層の前記第2部分の中間点において前記第2方向に沿う第4幅を有し、前記第4幅が前記第2幅より小さいことを特徴とする請求項11に記載の表示パネル。
- 前記第2導電層の前記第1部分の前記境界に近い位置には、第1幅変化領域を有し、前記第1幅変化領域は、前記第2部分に向かって徐々に増加する幅分布を有することを特徴とする請求項11に記載の表示パネル。
- 前記第1幅変化領域は、前記第1幅を含むことを特徴とする請求項15に記載の表示パネル。
- 前記第1幅変化領域における最大幅は、前記第2導電層の前記第2部分におけるいずれの幅よりも小さいことを特徴とする請求項15に記載の表示パネル。
- 前記第2導電層の前記第2部分の前記境界に近い位置には、第2幅変化領域を有し、前記第2幅変化領域は、前記境界から離れて徐々に減少する幅分布を有することを特徴とする請求項11に記載の表示パネル。
- 前記第2幅変化領域における最小幅は、前記第2導電層の前記第1部分におけるいずれの幅よりも大きいことを特徴とする請求項18に記載の表示パネル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103112945A TWI631399B (zh) | 2014-04-09 | 2014-04-09 | 具有線寬變化的導電層之顯示面板 |
TW103112945 | 2014-04-09 |
Publications (1)
Publication Number | Publication Date |
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JP3194107U true JP3194107U (ja) | 2014-11-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014004523U Active JP3194107U (ja) | 2014-04-09 | 2014-08-25 | 表示パネル |
Country Status (5)
Country | Link |
---|---|
US (1) | US9494831B2 (ja) |
EP (1) | EP2930558A1 (ja) |
JP (1) | JP3194107U (ja) |
KR (1) | KR20150117200A (ja) |
TW (1) | TWI631399B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI545381B (zh) * | 2014-05-21 | 2016-08-11 | 群創光電股份有限公司 | 顯示裝置 |
US9972271B2 (en) * | 2016-05-12 | 2018-05-15 | Novatek Microelectronics Corp. | Display panel |
CN110752248A (zh) * | 2019-11-20 | 2020-02-04 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、和显示装置 |
KR20210118309A (ko) * | 2020-03-20 | 2021-09-30 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (5)
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GB9406702D0 (en) * | 1994-04-05 | 1994-05-25 | Binstead Ronald P | Multiple input proximity detector and touchpad system |
JP2003257321A (ja) * | 2002-03-06 | 2003-09-12 | Pioneer Electronic Corp | プラズマディスプレイパネル |
US7880278B2 (en) * | 2006-05-16 | 2011-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having stress tuning layer |
JP2008130967A (ja) | 2006-11-24 | 2008-06-05 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2010054871A (ja) * | 2008-08-29 | 2010-03-11 | Hitachi Displays Ltd | 表示装置 |
-
2014
- 2014-04-09 TW TW103112945A patent/TWI631399B/zh active
- 2014-06-17 EP EP14172717.2A patent/EP2930558A1/en not_active Withdrawn
- 2014-06-18 US US14/307,522 patent/US9494831B2/en active Active
- 2014-08-25 JP JP2014004523U patent/JP3194107U/ja active Active
- 2014-12-24 KR KR1020140188720A patent/KR20150117200A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
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TW201539094A (zh) | 2015-10-16 |
KR20150117200A (ko) | 2015-10-19 |
US20150293412A1 (en) | 2015-10-15 |
TWI631399B (zh) | 2018-08-01 |
US9494831B2 (en) | 2016-11-15 |
EP2930558A1 (en) | 2015-10-14 |
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