JP3163703U - Semiconductor light source - Google Patents

Semiconductor light source Download PDF

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JP3163703U
JP3163703U JP2010005468U JP2010005468U JP3163703U JP 3163703 U JP3163703 U JP 3163703U JP 2010005468 U JP2010005468 U JP 2010005468U JP 2010005468 U JP2010005468 U JP 2010005468U JP 3163703 U JP3163703 U JP 3163703U
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semiconductor light
light emitting
light source
pedestal
emitting element
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晃行 北野
晃行 北野
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Nichia Corp
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Nichia Corp
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Abstract

【課題】広範囲に照射可能な半導体発光素子からなる光源を提供する。【解決手段】半導体光源100は、内部に金属配線を持ち、複数の異なる方向を向いた側面を有する台座11と、前記台座の複数の側面にフリップチップ実装される複数の半導体発光素子10と、前記半導体発光素子を覆い、前記台座の複数の側面上に平行に形成される封止部材12と、前記半導体発光素子の実装された位置より下側、かつ、前記封止部材の表面に、前記台座と異なる材質を有する反射部材13と、を備える。【選択図】図2A light source including a semiconductor light emitting element capable of irradiating a wide range is provided. A semiconductor light source includes a pedestal having metal wiring therein and having a plurality of side surfaces facing different directions, and a plurality of semiconductor light emitting elements that are flip-chip mounted on the plurality of side surfaces of the pedestal. The sealing member 12 that covers the semiconductor light emitting element and is formed in parallel on a plurality of side surfaces of the pedestal, and below the position where the semiconductor light emitting element is mounted, and on the surface of the sealing member, And a reflecting member 13 having a material different from that of the base. [Selection] Figure 2

Description

本考案は、半導体光源に関するものであり、特に、台座に実装された半導体発光素子を有する半導体光源に関する。   The present invention relates to a semiconductor light source, and more particularly to a semiconductor light source having a semiconductor light emitting element mounted on a pedestal.

半導体光源装置として、半導体発光素子が実装基板に平面状に複数配設され、半導体発光素子の配設面から所定の距離を隔てた位置に、半導体発光素子から放射される光を波長変換する蛍光部材を設けた波長変換カバーを備える構造が知られている(例えば、特許文献1参照)。半導体発光素子を複数配設することにより発光強度は大きくなる。さらに、波長変換カバーによって、半導体発光素子単体では発光させることが困難な色や、微妙な色相の光を発光させることができる。   As a semiconductor light source device, a plurality of semiconductor light emitting elements are arranged in a planar shape on a mounting substrate, and fluorescence that converts the wavelength of light emitted from the semiconductor light emitting element at a predetermined distance from the surface of the semiconductor light emitting element. A structure including a wavelength conversion cover provided with a member is known (for example, see Patent Document 1). By providing a plurality of semiconductor light emitting elements, the emission intensity is increased. Furthermore, the wavelength conversion cover can emit light of a color that is difficult to emit light alone or a subtle hue.

特開2006−156187号公報JP 2006-156187 A

しかしながら、半導体発光素子は実装面に対して鉛直方向へは高い配光特性を示すが、半導体発光素子の側面方向への配光特性は低く、光出力が小さい。そのため、実装基板に平面状に配設された従来の半導体光源においては照射方向が限定され、電球などのように広範囲に照射することができない。   However, although the semiconductor light emitting element exhibits high light distribution characteristics in the vertical direction with respect to the mounting surface, the light distribution characteristics in the side surface direction of the semiconductor light emitting elements are low and the light output is small. Therefore, the irradiation direction is limited in the conventional semiconductor light source arranged on the mounting substrate in a planar shape, and it cannot be irradiated over a wide range like a light bulb.

そこで、本考案はかかる事情に鑑みてなされたものであり、広範囲に照射可能な半導体発光素子からなる光源を提供することを課題とする。   Therefore, the present invention has been made in view of such circumstances, and an object thereof is to provide a light source composed of a semiconductor light emitting element that can irradiate a wide range.

本考案によれば、前記課題は次の手段により解決される。   According to the present invention, the above problem is solved by the following means.

本考案の半導体光源は、内部に金属配線を持ち、複数の異なる方向を向いた側面を有する台座と、前記台座の複数の側面にフリップチップ実装される複数の半導体発光素子と、前記半導体発光素子を覆い、前記台座の複数の側面上に平行に形成される封止部材と、前記半導体発光素子の実装された位置より下側、かつ、前記封止部材の表面に、前記台座と異なる材質を有する反射部材と、を備える。
これにより、発光強度を大きくするとともに、広範囲の方向へ光を放射することができる。さらに、半導体発光素子を平面状に配設するよりも小さい空間に半導体発光素子を配置することができ、半導体光源の小型化が可能となる。
A semiconductor light source of the present invention includes a pedestal having metal wiring inside and having a plurality of side faces facing different directions, a plurality of semiconductor light emitting elements mounted on a plurality of side faces of the pedestal, and the semiconductor light emitting elements A sealing member formed in parallel on a plurality of side surfaces of the pedestal, and a material different from the pedestal on the lower side of the mounting position of the semiconductor light emitting element and on the surface of the sealing member And a reflective member.
As a result, the emission intensity can be increased and light can be emitted in a wide range of directions. Furthermore, the semiconductor light-emitting element can be arranged in a space smaller than that in which the semiconductor light-emitting element is arranged in a planar shape, and the semiconductor light source can be downsized.

また、前記台座は、正極又は負極の配線を構成する金属材料からなり、前記台座と前記金属配線の間に絶縁層を備えることが好ましい。
これにより、台座自体が配線の役割を有し、新たな配線材料が不要となる。また、台座が金属材料からなるため放熱性に優れるとともに、半導体発光素子からの光を反射してより広範囲の方向へ光を放射することができる。
Moreover, it is preferable that the said base consists of a metal material which comprises the wiring of a positive electrode or a negative electrode, and is provided with an insulating layer between the said base and the said metal wiring.
As a result, the pedestal itself has the role of wiring, and no new wiring material is required. Further, since the pedestal is made of a metal material, the heat dissipation is excellent, and light from the semiconductor light emitting element can be reflected to emit light in a wider range.

また、前記台座は、表面に凹凸を有することが好ましい。
これにより、半導体発光素子の発光により発生した熱を効率良く放射させることができる。
Moreover, it is preferable that the said base has an unevenness | corrugation on the surface.
Thereby, the heat generated by the light emission of the semiconductor light emitting element can be radiated efficiently.

また、前記半導体光源が、複数備えられている発光装置とすることが好ましい。
これにより、光を広範囲の方向へ放射可能で、小型化した発光装置とすることができる。
Moreover, it is preferable that the semiconductor light source is a light emitting device provided with a plurality.
Thus, a light emitting device that can emit light in a wide range of directions and can be downsized can be obtained.

本考案の半導体光源によれば、広範囲に照射可能な半導体発光素子からなる光源を提供することができる。   According to the semiconductor light source of the present invention, it is possible to provide a light source including a semiconductor light emitting element that can irradiate a wide range.

第一の実施形態に係る半導体光源を示す概略斜視図である。It is a schematic perspective view which shows the semiconductor light source which concerns on 1st embodiment. 第一の実施形態に係る半導体光源の封止部材の内部を示す概略斜視図である。It is a schematic perspective view which shows the inside of the sealing member of the semiconductor light source which concerns on 1st embodiment. 第一の実施形態に係る半導体光源の封止部材の内部を示す概略上面図である。It is a schematic top view which shows the inside of the sealing member of the semiconductor light source which concerns on 1st embodiment. 第一の実施形態に係る半導体光源の台座の内部を示す概略斜視図である。It is a schematic perspective view which shows the inside of the base of the semiconductor light source which concerns on 1st embodiment. 第二の実施形態に係る半導体光源の台座の内部を示す概略斜視図である。It is a schematic perspective view which shows the inside of the base of the semiconductor light source which concerns on 2nd embodiment. 第三の実施形態に係る半導体光源を示す概略斜視図である。It is a schematic perspective view which shows the semiconductor light source which concerns on 3rd embodiment. 第四の実施形態に係る半導体光源の概略斜視図である。It is a schematic perspective view of the semiconductor light source which concerns on 4th embodiment. 第五の実施形態に係る発光装置を示す概略斜視図である。It is a schematic perspective view which shows the light-emitting device which concerns on 5th embodiment. 第五の実施形態に係る発光装置を示す概略断面図である。It is a schematic sectional drawing which shows the light-emitting device which concerns on 5th embodiment.

<第一の実施形態>
第一の実施形態について図面を用いて詳述する。図1は、第一の実施形態に係る半導体光源を示す概略斜視図である。図2は、第一の実施形態に係る半導体光源の封止部材の内部を示す概略斜視図である。図3は、第一の実施形態に係る半導体光源の封止部材の内部を示す概略上面図である。図4は、第一の実施形態に係る半導体光源の台座の内部を示す概略斜視図であり、半導体発光素子、封止部材、反射部材を省略している。
<First embodiment>
The first embodiment will be described in detail with reference to the drawings. FIG. 1 is a schematic perspective view showing a semiconductor light source according to the first embodiment. FIG. 2 is a schematic perspective view showing the inside of the sealing member of the semiconductor light source according to the first embodiment. FIG. 3 is a schematic top view showing the inside of the sealing member of the semiconductor light source according to the first embodiment. FIG. 4 is a schematic perspective view showing the inside of the base of the semiconductor light source according to the first embodiment, in which the semiconductor light emitting element, the sealing member, and the reflecting member are omitted.

第一の実施形態に係る半導体光源100は、半導体発光素子10と、貫通孔14を内部に備える台座11と、封止部材12と、反射部材13と、を少なくとも有する。
台座11は複数の異なる方向を向いた側面を有するAlNやセラミックス等の高熱伝導材料からなり、側面には半導体発光素子10を載置・導通させるための電極(図示せず)を具備する。また、台座11の内部に貫通孔14を有し、半導体発光素子10に通電するための金属配線(図示せず)が貫通孔14を通して台座11の側面の電極と接続される。台座11の側面には複数の半導体発光素子10が多方面を向くように、金属などの導電バンプを介して電極部分と接続されるようフリップチップ実装される。台座11の上面に電極を設けて半導体発光素子10を実装することもでき、側面の一つ又は上面に複数の半導体発光素子10を実装してもよい。半導体発光素子10は封止部材12で覆われ、且つ封止部材12は半導体発光素子10が実装された台座11の複数の側面や上面上にも平行して形成される。特許請求の範囲及び明細書に記載されている「平行」とは、寸分違わずに平行という意味ではなく、外見上、おおよそ平行と思われる程度を意味する。例えば、台座11の側面と封止部材12の表面との角度が10度以内であればよい。また、封止部材12の表面に凹凸があっても構わない。封止部材12に、半導体発光素子10の光を波長変換可能な蛍光体や拡散剤等を含有させてもよい。さらに、半導体発光素子10が実装された位置より下側の封止部材12の表面には台座11と異なる材質の反射部材13が設けられ、反射部材13は台座11にも接している。反射部材13としてAl、Au等の金属、若しくはフィラー、拡散剤、蛍光体、反射性物質等を含有する樹脂成形体を使用することができる。
The semiconductor light source 100 according to the first embodiment includes at least a semiconductor light emitting element 10, a pedestal 11 having a through hole 14 therein, a sealing member 12, and a reflecting member 13.
The pedestal 11 is made of a highly heat conductive material such as AlN or ceramics having side surfaces facing different directions, and includes electrodes (not shown) for mounting and conducting the semiconductor light emitting element 10 on the side surfaces. The pedestal 11 has a through hole 14, and a metal wiring (not shown) for energizing the semiconductor light emitting element 10 is connected to the electrode on the side surface of the pedestal 11 through the through hole 14. A plurality of semiconductor light emitting elements 10 are flip-chip mounted on the side surface of the pedestal 11 so as to be connected to electrode portions via conductive bumps such as metal so that the semiconductor light emitting elements 10 face in many directions. An electrode may be provided on the upper surface of the pedestal 11 to mount the semiconductor light emitting device 10, or a plurality of semiconductor light emitting devices 10 may be mounted on one or the upper surface of the side surface. The semiconductor light emitting element 10 is covered with a sealing member 12, and the sealing member 12 is also formed in parallel on a plurality of side surfaces and an upper surface of the base 11 on which the semiconductor light emitting element 10 is mounted. “Parallel” described in the claims and the specification does not mean parallel without any difference in size, but means that it seems to be roughly parallel in appearance. For example, the angle between the side surface of the base 11 and the surface of the sealing member 12 may be within 10 degrees. Further, the surface of the sealing member 12 may be uneven. The sealing member 12 may contain a phosphor or a diffusing agent that can convert the wavelength of the light emitted from the semiconductor light emitting element 10. Further, a reflective member 13 made of a material different from the base 11 is provided on the surface of the sealing member 12 below the position where the semiconductor light emitting element 10 is mounted, and the reflective member 13 is also in contact with the base 11. As the reflecting member 13, a resin molded body containing a metal such as Al or Au, or a filler, a diffusing agent, a phosphor, a reflective substance, or the like can be used.

これにより、半導体発光素子10の発光による発熱はバンプを介して台座11へ放射される。また、半導体発光素子10の実装位置よりも下側に反射部材13を有するため、下方向すなわち台座11の設置面方向へ抜ける光を抑制する。さらに、複数の半導体発光素子10が、平面状に配設されるよりも小さい空間で配設でき、多方面へ光放射することが可能である。したがって、放熱性に優れ、発光強度が向上するとともに広範囲へ照射することができ、且つ半導体光源の小型化が可能である。   Thereby, the heat generated by the light emission of the semiconductor light emitting element 10 is radiated to the base 11 via the bumps. Further, since the reflecting member 13 is provided below the mounting position of the semiconductor light emitting element 10, light that passes downward, that is, toward the installation surface of the base 11 is suppressed. Further, the plurality of semiconductor light emitting elements 10 can be arranged in a smaller space than that arranged in a plane, and light can be emitted in many directions. Therefore, the heat radiation is excellent, the emission intensity is improved, the irradiation can be performed over a wide range, and the semiconductor light source can be miniaturized.

<第二の実施形態>
次に、第二の実施形態に係る半導体光源について説明する。図5は、第二の実施形態に係る半導体光源の台座の内部を示す概略斜視図である。第二の実施形態に係る半導体光源は、台座11が正極又は負極の配線を構成する金属材料からなり、貫通孔14内の金属配線と台座11との間に絶縁層15を有する以外は、第一の実施形態と実質的に同様である。
<Second Embodiment>
Next, a semiconductor light source according to the second embodiment will be described. FIG. 5 is a schematic perspective view showing the inside of the base of the semiconductor light source according to the second embodiment. The semiconductor light source according to the second embodiment is the same as the semiconductor light source except that the pedestal 11 is made of a metal material constituting the positive or negative wiring, and the insulating layer 15 is provided between the metal wiring in the through hole 14 and the pedestal 11. This is substantially the same as one embodiment.

第二の実施形態に係る半導体光源は、台座11が金属材料からなるため、台座11自体が電極の役割を併せ持つ。したがって、台座11の側面は電極が不要となる。また、貫通孔14内の金属配線と台座11は絶縁層15で電気的に絶縁される。
これにより、台座11は放熱性に優れるとともに、半導体発光素子10からの発光が台座11で反射されることができる。
In the semiconductor light source according to the second embodiment, since the pedestal 11 is made of a metal material, the pedestal 11 itself also serves as an electrode. Therefore, no electrode is required on the side surface of the base 11. Further, the metal wiring in the through hole 14 and the pedestal 11 are electrically insulated by the insulating layer 15.
Thereby, the pedestal 11 is excellent in heat dissipation, and light emitted from the semiconductor light emitting element 10 can be reflected by the pedestal 11.

<第三の実施形態>
次に、第三の実施形態に係る半導体光源について説明する。図6は、第三の実施形態に係る半導体光源を示す概略斜視図である。第三の実施形態に係る半導体光源は、台座11の形状が異なる以外は、第一又は第二の実施形態と実質的に同様である。
<Third embodiment>
Next, a semiconductor light source according to the third embodiment will be described. FIG. 6 is a schematic perspective view showing a semiconductor light source according to the third embodiment. The semiconductor light source according to the third embodiment is substantially the same as the first or second embodiment except that the shape of the base 11 is different.

第三の実施形態に係る半導体光源は、台座11が、表面に凹凸を有する。
これにより、半導体発光素子10の発光により発した熱を、効率よく放射させることが出来る。
As for the semiconductor light source which concerns on 3rd embodiment, the base 11 has an unevenness | corrugation on the surface.
Thereby, the heat generated by the light emission of the semiconductor light emitting element 10 can be efficiently radiated.

<第四の実施形態>
次に、第四の実施形態に係る半導体光源について説明する。図7は、第四の実施形態に係る半導体光源の概略斜視図である。第四の実施形態に係る半導体光源は、第一乃至第三の実施形態に係る半導体光源100を複数個配列させており、後述する説明のため封止部材12と反射部材13と貫通孔14を省略している。
<Fourth embodiment>
Next, a semiconductor light source according to the fourth embodiment will be described. FIG. 7 is a schematic perspective view of a semiconductor light source according to the fourth embodiment. In the semiconductor light source according to the fourth embodiment, a plurality of semiconductor light sources 100 according to the first to third embodiments are arranged, and the sealing member 12, the reflecting member 13, and the through hole 14 are provided for the explanation to be described later. Omitted.

半導体光源100を複数個配列する場合、隣り合う半導体光源100について、半導体発光素子10は各々向かい合わないように台座11に実装する。
これにより、台座11に実装された全ての半導体発光素子10は発光面側に光を遮るものがないため、半導体発光素子10の発光を効率良く利用することができる。
When a plurality of semiconductor light sources 100 are arranged, the semiconductor light emitting elements 10 are mounted on the base 11 so as not to face each other.
Thereby, since all the semiconductor light emitting elements 10 mounted on the pedestal 11 do not block light on the light emitting surface side, the light emission of the semiconductor light emitting elements 10 can be used efficiently.

<第五の実施形態>
次に、第五の実施形態に係る発光装置について説明する。図8は、第五の実施形態に係る発光装置を示す概略斜視図である。図9は、第五の実施形態に係る発光装置を示し、図8のA−A’での概略断面図である。
<Fifth embodiment>
Next, a light emitting device according to a fifth embodiment will be described. FIG. 8 is a schematic perspective view showing a light emitting device according to the fifth embodiment. FIG. 9 shows a light emitting device according to the fifth embodiment, and is a schematic cross-sectional view taken along line AA ′ of FIG.

第五の実施形態に係る発光装置200は、半導体光源100と、透光性カバー101と、半導体光源実装基板102と、収納部材103と、口金104と、を少なくとも有する。
半導体光源実装基板102に複数の半導体光源100が実装される。第五の実施形態に係る発光装置200において、半導体光源100は第一乃至第三の実施形態と実質的に同様であり、半導体発光素子10の実装形態は第四の実施形態と実質的に同様である。各々の半導体光源100の内部は金属配線を具備し、金属配線は半導体光源実装基板102を貫通して収納部材103で収納される。収納部材103を介して、電源が給電される口金104を備え、収納部材103の大径開口部に半球状の透光性カバー101を配置する。透光性カバー101として、ガラスや、シリコーン樹脂を圧縮成型したキャスティングケース等を使用することができる。透光性カバー101の内部や内外表面には蛍光体、フィラー、拡散剤等を具備することも可能である。
The light emitting device 200 according to the fifth embodiment includes at least a semiconductor light source 100, a translucent cover 101, a semiconductor light source mounting substrate 102, a storage member 103, and a base 104.
A plurality of semiconductor light sources 100 are mounted on the semiconductor light source mounting substrate 102. In the light emitting device 200 according to the fifth embodiment, the semiconductor light source 100 is substantially the same as in the first to third embodiments, and the mounting form of the semiconductor light emitting element 10 is substantially the same as in the fourth embodiment. It is. Each semiconductor light source 100 includes a metal wiring, and the metal wiring penetrates the semiconductor light source mounting substrate 102 and is stored in the storage member 103. A base 104 to which power is supplied via the storage member 103 is provided, and a hemispherical translucent cover 101 is disposed in a large-diameter opening of the storage member 103. As the translucent cover 101, glass, a casting case in which silicone resin is compression-molded, or the like can be used. The translucent cover 101 may have a phosphor, a filler, a diffusing agent, or the like on the inside or inside / outside surface thereof.

これにより、放熱性に優れ、発光強度が大きく、広範囲へ照射可能な発光装置を得ることができる。また、外部から埃などが半導体光源100に付着するのを防止することができるとともに、半導体光源100に直接触れることがないため、ユーザーにとって感電の恐れもない。   As a result, a light-emitting device that has excellent heat dissipation, high emission intensity, and can be irradiated over a wide range can be obtained. Further, dust and the like can be prevented from adhering to the semiconductor light source 100 from the outside, and since there is no direct contact with the semiconductor light source 100, there is no risk of electric shock for the user.

実施例の発光装置として、図8及び図9に基づいて説明する。図8は、第五の実施形態に係る発光装置を示す概略斜視図である。図9は、第五の実施形態に係る発光装置を示し、図8のA−A’での概略断面図である。   The light emitting device of the embodiment will be described with reference to FIGS. FIG. 8 is a schematic perspective view showing a light emitting device according to the fifth embodiment. FIG. 9 shows a light emitting device according to the fifth embodiment, and is a schematic sectional view taken along line A-A ′ of FIG. 8.

実施例の発光装置200は、半導体発光素子10と、貫通孔14を内部に備える台座11と、封止部材12と、反射部材13と、を備える半導体光源100を有し、また、透光性カバー101と、半導体光源実装基板102と、収納部材103と、口金104と、を有する。   The light emitting device 200 according to the embodiment includes a semiconductor light source 100 including the semiconductor light emitting element 10, a pedestal 11 having a through hole 14 therein, a sealing member 12, and a reflecting member 13. A cover 101, a semiconductor light source mounting substrate 102, a storage member 103, and a base 104 are included.

実施例の半導体発光素子10は、平面視形状が略正方形の素子であり、GaN系半導体層積層構造からなる。この半導体発光素子10がAlNからなる台座11の側面と上面に複数個フリップチップ実装され、半導体発光素子10の発光を波長変換する蛍光体を含有する封止部材12で封止される。封止部材12は半導体発光素子10を覆い、台座11の複数の側面と上面上にも平行して形成される。さらに、半導体発光素子10が実装された位置より下側の封止部材12の表面には反射部材13としてTiOを混合したシリコーン樹脂を配置し、半導体光源100とする。 The semiconductor light emitting device 10 of the embodiment is a device having a substantially square shape in plan view, and has a GaN-based semiconductor layer laminated structure. A plurality of semiconductor light emitting elements 10 are flip-chip mounted on the side surface and the upper surface of a base 11 made of AlN, and sealed with a sealing member 12 containing a phosphor that converts the wavelength of light emitted from the semiconductor light emitting element 10. The sealing member 12 covers the semiconductor light emitting element 10 and is formed in parallel on the plurality of side surfaces and the upper surface of the base 11. Further, a silicone resin mixed with TiO 2 is disposed as the reflecting member 13 on the surface of the sealing member 12 below the position where the semiconductor light emitting element 10 is mounted, thereby forming the semiconductor light source 100.

半導体光源100は台座11の内部に金属配線を有し、半導体光源実装基板102に配設される。金属配線は半導体光源実装基板102を貫通して収納部材103に収納される。収納部材103を介して、電源が給電される口金104を備え、収納部材103の大径開口部に透光性カバー101として、シリコーン樹脂を圧縮成型した半球状のキャスティングケースを配置する。   The semiconductor light source 100 has metal wiring inside the pedestal 11 and is disposed on the semiconductor light source mounting substrate 102. The metal wiring penetrates the semiconductor light source mounting substrate 102 and is stored in the storage member 103. A cap 104 to which power is supplied via the storage member 103 is provided, and a hemispherical casting case in which silicone resin is compression-molded is disposed as a translucent cover 101 in a large-diameter opening of the storage member 103.

本考案の半導体光源及び発光装置は、一般照明等に好適に利用することができる。   The semiconductor light source and the light emitting device of the present invention can be suitably used for general illumination or the like.

10 半導体発光素子
11 台座
12 封止部材
13 反射部材
14 貫通孔
15 絶縁層
100 半導体光源
101 透光性カバー
102 半導体光源実装基板
103 収納部材(ハウジング)
104 口金
200 発光装置
DESCRIPTION OF SYMBOLS 10 Semiconductor light-emitting element 11 Base 12 Sealing member 13 Reflecting member 14 Through-hole 15 Insulating layer 100 Semiconductor light source 101 Translucent cover 102 Semiconductor light source mounting board 103 Housing member (housing)
104 Base 200 Light-emitting device

Claims (4)

内部に金属配線を持ち、複数の異なる方向を向いた側面を有する台座と、
前記台座の複数の側面にフリップチップ実装される複数の半導体発光素子と、
前記半導体発光素子を覆い、前記台座の複数の側面上に平行に形成される封止部材と、
前記半導体発光素子の実装された位置より下側、かつ、前記封止部材の表面に、前記台座と異なる材質を有する反射部材と、
を備えることを特徴とする半導体光源。
A pedestal having metal wiring inside and having side surfaces facing different directions;
A plurality of semiconductor light emitting elements flip-chip mounted on a plurality of side surfaces of the pedestal;
A sealing member that covers the semiconductor light emitting element and is formed in parallel on a plurality of side surfaces of the pedestal;
A reflective member having a material different from that of the pedestal on the lower side of the position where the semiconductor light emitting element is mounted and on the surface of the sealing member;
A semiconductor light source comprising:
前記台座は、正極又は負極の配線を構成する金属材料からなり、
前記台座と前記金属配線の間に絶縁層を備えることを特徴とする請求項1に記載の半導体光源。
The pedestal is made of a metal material constituting the positive or negative wiring,
The semiconductor light source according to claim 1, further comprising an insulating layer between the pedestal and the metal wiring.
前記台座は、表面に凹凸を有することを特徴とする請求項1又は2に記載の半導体光源。   The semiconductor light source according to claim 1, wherein the pedestal has an uneven surface. 前記半導体光源が、複数備えられていることを特徴とする請求項1から3のいずれか一に記載の発光装置。   The light emitting device according to claim 1, wherein a plurality of the semiconductor light sources are provided.
JP2010005468U 2010-08-16 2010-08-16 Semiconductor light source Expired - Lifetime JP3163703U (en)

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