JP3083725B2 - シリコン・オン・サファイア・ウエーハの製造方法 - Google Patents
シリコン・オン・サファイア・ウエーハの製造方法Info
- Publication number
- JP3083725B2 JP3083725B2 JP07031925A JP3192595A JP3083725B2 JP 3083725 B2 JP3083725 B2 JP 3083725B2 JP 07031925 A JP07031925 A JP 07031925A JP 3192595 A JP3192595 A JP 3192595A JP 3083725 B2 JP3083725 B2 JP 3083725B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer
- wafer
- depositing
- sos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 229910052594 sapphire Inorganic materials 0.000 title claims description 25
- 239000010980 sapphire Substances 0.000 title claims description 25
- 235000012431 wafers Nutrition 0.000 claims description 180
- 229910052710 silicon Inorganic materials 0.000 claims description 95
- 239000010703 silicon Substances 0.000 claims description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 92
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 74
- 238000000151 deposition Methods 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 47
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 40
- 230000003287 optical effect Effects 0.000 claims description 33
- 229920005591 polysilicon Polymers 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 4
- -1 phosphorus ions Chemical class 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 93
- 238000000576 coating method Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/224,451 US5877094A (en) | 1994-04-07 | 1994-04-07 | Method for fabricating a silicon-on-sapphire wafer |
US224451 | 1994-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07283383A JPH07283383A (ja) | 1995-10-27 |
JP3083725B2 true JP3083725B2 (ja) | 2000-09-04 |
Family
ID=22840748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP07031925A Expired - Fee Related JP3083725B2 (ja) | 1994-04-07 | 1995-02-21 | シリコン・オン・サファイア・ウエーハの製造方法 |
Country Status (5)
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7893522B2 (en) | 2007-09-27 | 2011-02-22 | Oki Semiconductor Co., Ltd. | Structural body and manufacturing method thereof |
US7989324B2 (en) | 2005-03-18 | 2011-08-02 | Oki Semiconductor Co., Ltd. | Method for manufacturing silicon on sapphire wafer |
JPWO2013094665A1 (ja) * | 2011-12-22 | 2015-04-27 | 信越化学工業株式会社 | 複合基板 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6235611B1 (en) * | 1999-01-12 | 2001-05-22 | Kulite Semiconductor Products Inc. | Method for making silicon-on-sapphire transducers |
US6698295B1 (en) * | 2000-03-31 | 2004-03-02 | Shipley Company, L.L.C. | Microstructures comprising silicon nitride layer and thin conductive polysilicon layer |
US7026697B2 (en) * | 2000-03-31 | 2006-04-11 | Shipley Company, L.L.C. | Microstructures comprising a dielectric layer and a thin conductive layer |
US6544810B1 (en) * | 2000-08-31 | 2003-04-08 | Motorola, Inc. | Capacitively sensed micromachined component and method of manufacturing |
JP4910066B2 (ja) * | 2004-01-06 | 2012-04-04 | ラピスセミコンダクタ株式会社 | 半導体ウエハとその製造方法 |
JP4714423B2 (ja) * | 2004-01-06 | 2011-06-29 | Okiセミコンダクタ株式会社 | 半導体ウエハとその製造方法 |
JP4897210B2 (ja) * | 2004-11-18 | 2012-03-14 | ラピスセミコンダクタ株式会社 | 半導体装置の構造及びその製造方法 |
JP4938243B2 (ja) * | 2005-03-04 | 2012-05-23 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法、並びに、半導体ウエハ及び半導体ウエハの製造方法 |
JP4708150B2 (ja) * | 2005-10-14 | 2011-06-22 | Okiセミコンダクタ株式会社 | 半導体装置の形成方法 |
JP5219527B2 (ja) * | 2008-01-22 | 2013-06-26 | ラピスセミコンダクタ株式会社 | ウエハプロセス適用基板及びその製造方法 |
WO2009123261A1 (ja) * | 2008-04-01 | 2009-10-08 | 信越化学工業株式会社 | Soi基板の製造方法 |
JP2010010214A (ja) * | 2008-06-24 | 2010-01-14 | Oki Semiconductor Co Ltd | 半導体装置の製造方法、半導体製造装置、及び記憶媒体 |
JP5633328B2 (ja) | 2010-11-18 | 2014-12-03 | 住友電気工業株式会社 | 半導体装置の製造方法 |
US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
US9221289B2 (en) | 2012-07-27 | 2015-12-29 | Apple Inc. | Sapphire window |
US9232672B2 (en) | 2013-01-10 | 2016-01-05 | Apple Inc. | Ceramic insert control mechanism |
US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5541709A (en) * | 1978-09-16 | 1980-03-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Sos semiconductor base |
JPS55153347A (en) * | 1979-05-18 | 1980-11-29 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS5827663B2 (ja) * | 1979-06-04 | 1983-06-10 | 富士通株式会社 | 半導体装置の製造方法 |
US4230505A (en) * | 1979-10-09 | 1980-10-28 | Rca Corporation | Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal |
JPS57153445A (en) * | 1981-03-17 | 1982-09-22 | Nec Corp | Sos semiconductor substrate |
JPS57162346A (en) * | 1981-03-30 | 1982-10-06 | Jido Keisoku Gijutsu Kenkiyuukumiai | Manufacutre of insulating and isolating substrate |
US4608095A (en) * | 1983-02-14 | 1986-08-26 | Monsanto Company | Gettering |
US4608096A (en) * | 1983-04-04 | 1986-08-26 | Monsanto Company | Gettering |
JPS62193147A (ja) * | 1986-02-19 | 1987-08-25 | Toshiba Corp | 半導体装置の製造方法 |
US4732867A (en) * | 1986-11-03 | 1988-03-22 | General Electric Company | Method of forming alignment marks in sapphire |
US5006479A (en) * | 1990-02-27 | 1991-04-09 | Rockwell International Corporation | Methods for improving radiation tolerance of silicon gate CMOS/silicon on sapphire devices |
JPH0637317A (ja) * | 1990-04-11 | 1994-02-10 | General Motors Corp <Gm> | 薄膜トランジスタおよびその製造方法 |
-
1994
- 1994-04-07 US US08/224,451 patent/US5877094A/en not_active Expired - Fee Related
- 1994-12-24 TW TW083112141A patent/TW286426B/zh active
-
1995
- 1995-02-21 JP JP07031925A patent/JP3083725B2/ja not_active Expired - Fee Related
- 1995-03-08 EP EP95480014A patent/EP0676794A3/en not_active Withdrawn
- 1995-04-04 KR KR1019950007814A patent/KR0170464B1/ko not_active IP Right Cessation
-
1999
- 1999-03-01 US US09/260,404 patent/US6238935B1/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7989324B2 (en) | 2005-03-18 | 2011-08-02 | Oki Semiconductor Co., Ltd. | Method for manufacturing silicon on sapphire wafer |
US7893522B2 (en) | 2007-09-27 | 2011-02-22 | Oki Semiconductor Co., Ltd. | Structural body and manufacturing method thereof |
JPWO2013094665A1 (ja) * | 2011-12-22 | 2015-04-27 | 信越化学工業株式会社 | 複合基板 |
US9425248B2 (en) | 2011-12-22 | 2016-08-23 | Shin-Etsu Chemical Co., Ltd. | Composite substrate |
KR101852229B1 (ko) | 2011-12-22 | 2018-04-25 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 복합 기판 |
Also Published As
Publication number | Publication date |
---|---|
TW286426B (US06623731-20030923-C00012.png) | 1996-09-21 |
EP0676794A2 (en) | 1995-10-11 |
KR950030219A (ko) | 1995-11-24 |
KR0170464B1 (ko) | 1999-03-30 |
JPH07283383A (ja) | 1995-10-27 |
US5877094A (en) | 1999-03-02 |
US6238935B1 (en) | 2001-05-29 |
EP0676794A3 (en) | 1995-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |