JP3083567B2 - Ｓｒａｍメモリセル - Google Patents

Ｓｒａｍメモリセル

Info

Publication number
JP3083567B2
JP3083567B2 JP09512314A JP51231497A JP3083567B2 JP 3083567 B2 JP3083567 B2 JP 3083567B2 JP 09512314 A JP09512314 A JP 09512314A JP 51231497 A JP51231497 A JP 51231497A JP 3083567 B2 JP3083567 B2 JP 3083567B2
Authority
JP
Japan
Prior art keywords
memory cell
bistable
effect transistor
potential
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP09512314A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11500563A (ja
Inventor
ゴスナー、ハラルト
アイゼレ、イグナツ
ウイツトマン、フランツ
ラオ、フアリーペ ラムゴパル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPH11500563A publication Critical patent/JPH11500563A/ja
Application granted granted Critical
Publication of JP3083567B2 publication Critical patent/JP3083567B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP09512314A 1995-09-21 1996-09-16 Ｓｒａｍメモリセル Expired - Fee Related JP3083567B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19535106A DE19535106C2 (de) 1995-09-21 1995-09-21 SRAM-Speicherzelle
DE19535106.1 1995-09-21
PCT/DE1996/001745 WO1997011465A2 (de) 1995-09-21 1996-09-16 Sram-speicherzelle

Publications (2)

Publication Number Publication Date
JPH11500563A JPH11500563A (ja) 1999-01-12
JP3083567B2 true JP3083567B2 (ja) 2000-09-04

Family

ID=7772785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09512314A Expired - Fee Related JP3083567B2 (ja) 1995-09-21 1996-09-16 Ｓｒａｍメモリセル

Country Status (11)

Country Link
US (1) US6067247A (instruction)
EP (1) EP0852056B1 (instruction)
JP (1) JP3083567B2 (instruction)
KR (1) KR100286953B1 (instruction)
CN (1) CN1197532A (instruction)
AT (1) ATE181450T1 (instruction)
DE (2) DE19535106C2 (instruction)
ES (1) ES2135925T3 (instruction)
IN (1) IN188999B (instruction)
RU (1) RU2188465C2 (instruction)
WO (1) WO1997011465A2 (instruction)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6301147B1 (en) * 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
GB2360113B (en) * 2000-03-08 2004-11-10 Seiko Epson Corp Dynamic random access memory
JP2003257184A (ja) * 2002-02-28 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置
CN100412991C (zh) * 2006-07-05 2008-08-20 北京大学 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法
RU2470390C1 (ru) * 2011-05-03 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный политехнический университет" (ФГБОУ ВПО "СПбГПУ") Статическая запоминающая ячейка с двумя адресными входами

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7908340A (nl) * 1979-11-15 1981-06-16 Philips Nv Geheugencelinrichting voor statisch geheugen.
JPS56143587A (en) * 1980-03-26 1981-11-09 Fujitsu Ltd Static type memory circuit
FR2511822A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit
FR2629941B1 (fr) * 1988-04-12 1991-01-18 Commissariat Energie Atomique Memoire et cellule memoire statiques du type mis, procede de memorisation
RU2018979C1 (ru) * 1991-04-22 1994-08-30 Научно-исследовательский институт молекулярной электроники Запоминающее устройство
JP3288189B2 (ja) * 1994-12-12 2002-06-04 三菱電機株式会社 スタティックランダムアクセスメモリ
GB9509817D0 (en) * 1995-05-11 1995-07-05 Xilinx Inc Sense amplifier for reading logic device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Ｃ．Ｅ．ＤＡＮＩＥＬ ＣＨＥＮ"Ｓｉｎｇｌｅ−Ｔｒａｎｓｉｓｔｏｒ Ｌａｔｃｈ ｉｎ ＳＯＩ ＭＯＳＦＥＴ’ｓ"，ＩＥＥＥ ＥＬＥＣＴＲＯＮ ＤＥＶＩＣＥ ＬＥＴＴＥＲＳ，ＶＯＬ．９，ＮＯ．１２，ＤＥＣＥＭＢＥＲ １９８８
ＮＥＡＬ ＫＩＳＴＬＥＲ"Ｄｅｔａｉｌｅｄ Ｃｈａｒａｃｔｅｒｉｚａｔｉｏｎ ａｎｄ Ａｎａｌｙｓｉｓ ｏｆ Ｂｒｅａｋｄｏｗｎ Ｖｏｌｔａｇｅ ｉｎ Ｆｕｌｌｙ Ｄｅｐｌｅｔｅｄ ＳＯＩ ｎ−ＭＯＳＦＥＴ’ｓ"，ＩＥＥＥ ＴＲＡＮＳＡＣＴＩＯＮＳ ＯＮ ＥＬＥＣＴＲＯＮ ＤＥＶＩＣＥＳ，ＶＯＬ．４１，ＮＯ．７，ＪＵＬＹ １９９４

Also Published As

Publication number Publication date
RU2188465C2 (ru) 2002-08-27
DE19535106C2 (de) 1998-03-19
IN188999B (instruction) 2002-12-07
EP0852056B1 (de) 1999-06-16
ATE181450T1 (de) 1999-07-15
KR19990045750A (ko) 1999-06-25
EP0852056A2 (de) 1998-07-08
DE19535106A1 (de) 1997-03-27
CN1197532A (zh) 1998-10-28
ES2135925T3 (es) 1999-11-01
WO1997011465A2 (de) 1997-03-27
DE59602264D1 (de) 1999-07-22
KR100286953B1 (ko) 2001-04-16
JPH11500563A (ja) 1999-01-12
WO1997011465A3 (de) 1997-04-17
US6067247A (en) 2000-05-23

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