JP3013589B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- JP3013589B2 JP3013589B2 JP4092518A JP9251892A JP3013589B2 JP 3013589 B2 JP3013589 B2 JP 3013589B2 JP 4092518 A JP4092518 A JP 4092518A JP 9251892 A JP9251892 A JP 9251892A JP 3013589 B2 JP3013589 B2 JP 3013589B2
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- wiring board
- insulating resin
- wiring
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83868—Infrared [IR] curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Wire Bonding (AREA)
- Die Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＬＳＩチップを、絶縁
性樹脂を用いて配線基板に実装する半導体装置の製造方
法に関するものである。The present invention relates to a method for manufacturing a semiconductor device in which an LSI chip is mounted on a wiring board using an insulating resin.
【０００２】[0002]
【従来の技術】近年、半導体装置の高密度化が著しい
中、一つの配線基板に多数の半導体素子をベアチップの
状態で実装する、半導体装置の開発が急務となってい
る。この半導体装置を実現するための有望な実装方式と
してマイクロバンプボンディング実装方式がある。ま
ず、マイクロバンプボンディング実装方式について（図
４）を用いて説明する。2. Description of the Related Art In recent years, as the density of a semiconductor device has been remarkably increased, the development of a semiconductor device in which a large number of semiconductor elements are mounted on one wiring board in a bare chip state has been urgently required. As a promising mounting method for realizing this semiconductor device, there is a micro-bump bonding mounting method. First, the micro bump bonding mounting method will be described with reference to FIG.
【０００３】ガラス、セラミック、シリコン、ガラスエ
ポキシ等よりなる配線基板１の導体配線２を有する面上
の半導体素子６を設置する部分に、絶縁性樹脂４を塗布
する。導体配線２及び基板電極３は、クロム金、金、
銅、ＩＴＯ、アルミニュウム等からなり、絶縁性樹脂４
は、熱硬化型または紫外線硬化型のエポキシ、シリコ
ン、アクリル系の絶縁性樹脂４である。また設置される
半導体素子６は、金、アルミニュウム、銅等からなる導
電性の突起電極５を有している。次に、突起電極５と導
体配線２を一致させた後、半導体素子６を配線基板１に
加圧する。そして、加熱もしくは紫外線照射によって絶
縁性樹脂４を硬化し、半導体素子６を配線基板１に固着
させる。その後、半導体素子６の加圧力が解除されて
も、導体配線２と突起電極５の電気的接続は絶縁性樹脂
４の収縮力によって維持される。熱硬化型の絶縁性樹脂
４を用いた場合は、通常（図５）に示した加圧ツール８
やステージ７内に組み込まれたヒータによって、半導体
素子６もしくは配線基板１を加熱し、絶縁性樹脂４に伝
わった熱によって硬化を行なう。紫外線硬化型の絶縁性
樹脂４を用いた場合は、（図６）に示したように、配線
基板１が紫外線に対して透明な配線基板１であれば、石
英やガラスなどの紫外線透過性を有するステージ７上で
配線基板１の裏面側から紫外線照射を行ない、配線基板
１が紫外線に対して不透明な基板であれば、半導体素子
６の側面側から紫外線照射を行なって絶縁性樹脂４を硬
化する。[0003] An insulating resin 4 is applied to a portion of the wiring board 1 made of glass, ceramic, silicon, glass epoxy or the like on which the semiconductor element 6 is to be placed on the surface having the conductor wiring 2. The conductor wiring 2 and the substrate electrode 3 are made of chrome gold, gold,
Insulating resin 4 made of copper, ITO, aluminum, etc.
Is a thermosetting or ultraviolet curable epoxy, silicon, or acrylic insulating resin 4. The semiconductor element 6 to be installed has a conductive bump electrode 5 made of gold, aluminum, copper, or the like. Next, after the protruding electrode 5 and the conductor wiring 2 are matched, the semiconductor element 6 is pressed against the wiring board 1. Then, the insulating resin 4 is cured by heating or ultraviolet irradiation, and the semiconductor element 6 is fixed to the wiring board 1. Thereafter, even if the pressure of the semiconductor element 6 is released, the electrical connection between the conductor wiring 2 and the protruding electrode 5 is maintained by the contracting force of the insulating resin 4. When the thermosetting insulating resin 4 is used, the pressing tool 8 shown in FIG.
The semiconductor element 6 or the wiring substrate 1 is heated by a heater incorporated in the stage 7 and is cured by the heat transmitted to the insulating resin 4. When the ultraviolet-curable insulating resin 4 is used, as shown in FIG. 6, if the wiring board 1 is a wiring board 1 transparent to ultraviolet light, the ultraviolet light transmission property of quartz, glass, or the like is reduced. Ultraviolet irradiation is performed from the back side of the wiring substrate 1 on the stage 7 having the same. If the wiring substrate 1 is a substrate that is opaque to ultraviolet light, ultraviolet irradiation is performed from the side surface of the semiconductor element 6 to cure the insulating resin 4. I do.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら上記の半
導体装置とその製造方法では、以下に示す問題がある。
加熱によって絶縁性樹脂を硬化する場合は、加圧ツール
やステージを加熱すると、加圧ツールやステージに熱応
力が加わって加圧ツールやステージに歪や反りが生じる
ため、半導体素子の加圧時に局所的に大きな応力が加わ
り、均一な接続を得るのは困難となる。また、局所的な
応力は、接続性や半導体素子特性の劣化の原因ともな
る。しかも、半導体素子もしくは配線基板が直接加熱さ
れるために、半導体素子と配線基板の熱膨張係数の差か
ら、半導体素子と配線基板の間に熱応力が生じるため
に、接続性や半導体素子特性、及び、その信頼性に悪影
響を与える。However, the above-described semiconductor device and its manufacturing method have the following problems.
When the insulating resin is cured by heating, heating the pressing tool or stage will apply thermal stress to the pressing tool or stage, causing distortion or warping of the pressing tool or stage. A large stress is locally applied, and it is difficult to obtain a uniform connection. In addition, local stress causes deterioration of connectivity and semiconductor element characteristics. Moreover, since the semiconductor element or the wiring board is directly heated, a thermal stress is generated between the semiconductor element and the wiring board due to a difference in thermal expansion coefficient between the semiconductor element and the wiring board. And adversely affect its reliability.
【０００５】紫外線を用いて絶縁性樹脂を硬化させる場
合は、配線基板が紫外線に対して透明でなければなら
ず、使用可能な配線基板が限定される。紫外線に対して
不透明な基板を用いて、紫外線を半導体素子側面側から
照射して絶縁性樹脂を硬化する場合は、半導体素子と配
線基板のギャップが狭いため、絶縁性樹脂中に入射され
る紫外線の照射量が十分でなく、硬化に時間がかかりす
ぎる。特に、チップ面積の広い半導体素子ほど硬化時間
は長く、生産性に乏しい。しかも、紫外線の強度は絶縁
性樹脂中で急激に減衰するため、硬化長さには限界があ
る。そのため、チップ面積の広い半導体素子の中央付近
に接続部があるときは、半導体素子の加圧除去後、突起
電極下に絶縁性樹脂が浸入するため、信頼性の高い接続
を得るのは困難である。When the insulating resin is cured using ultraviolet rays, the wiring board must be transparent to ultraviolet rays, and the usable wiring boards are limited. When the insulating resin is cured by irradiating the ultraviolet light from the side of the semiconductor element using a substrate which is opaque to the ultraviolet light, since the gap between the semiconductor element and the wiring board is narrow, the ultraviolet light incident on the insulating resin is used. Is not enough, and it takes too long to cure. In particular, a semiconductor element having a larger chip area has a longer curing time and is less productive. In addition, since the intensity of the ultraviolet light is rapidly attenuated in the insulating resin, the curing length has a limit. Therefore, when there is a connection portion near the center of a semiconductor element having a large chip area, it is difficult to obtain a highly reliable connection because the insulating resin penetrates under the protruding electrode after the semiconductor element is removed under pressure. is there.
【０００６】[0006]
【課題を解決するための手段】上記問題点を解決するた
めに、本発明では、半導体素子と赤外線透過性を有する
配線基板間に赤外線吸収性を有する熱硬化性の絶縁性樹
脂を介存させ、樹脂を硬化させて半導体素子と基板の配
線間を突起電極を介して接続する半導体装置を得る。さ
らに、本発明では、突起電極を有した半導体素子主面、
もしくは赤外線に対して透過性を有する配線基板上の前
記半導体素子を設置する部分に、前期配線基板を透過す
る赤外線波長領域の赤外線を吸収する材料を含有させた
熱硬化型の絶縁性樹脂を塗布する。次に、前記半導体素
子の前記突起電極と前記配線基板の導体配線を一致さ
せ、前記半導体素子を前記配線基板に加圧する。その
後、前記配線基板の裏面側から、赤外線放射ランプにて
赤外線を放射させ、赤外線を前記配線基板を透過させて
前記絶縁性樹脂に照射し、前記絶縁性樹脂に含有させた
赤外線吸収性を有する材料を加熱することにより、前記
絶縁性樹脂を硬化し前記半導体素子を前記配線基板に固
着するとともに、前記突起電極と前記導体配線を電気的
な接続を得る半導体装置の製造方法とする。もしくは、
前記製造方法において、前記赤外線放射ランプ前記配線
基板との間に、前記配線基板と同じ材質のフィルタを介
在させ、前記絶縁性基板に吸収される赤外線を遮断し、
赤外線照射による前記絶縁性基板の発熱を抑える半導体
装置の製造方法とする。また、上記製造方法において、
配線基板上の電極に金属が用いられている場合は、金属
鏡面での赤外線反射を抑えるために、配線基板の電極下
に赤外線吸収性を有する膜を形成する。According to the present invention, a thermosetting insulating resin having an infrared absorbing property is interposed between a semiconductor element and a wiring board having an infrared transmitting property. By curing the resin, a semiconductor device is obtained in which the semiconductor element and the wiring of the substrate are connected via the protruding electrodes. Further, in the present invention, a semiconductor element main surface having a bump electrode,
Alternatively, a thermosetting insulating resin containing a material that absorbs infrared light in an infrared wavelength range that passes through the wiring board is applied to a portion of the wiring board having a transmittance to infrared light where the semiconductor element is to be installed. I do. Next, the protruding electrode of the semiconductor element is made to coincide with the conductor wiring of the wiring board, and the semiconductor element is pressed against the wiring board. Thereafter, from the back side of the wiring board, infrared rays are emitted by an infrared radiation lamp, the infrared rays are transmitted through the wiring board to irradiate the insulating resin, and have an infrared absorbing property contained in the insulating resin. By heating a material, the insulating resin is cured to fix the semiconductor element to the wiring board, and to provide a method of manufacturing a semiconductor device in which the protruding electrode and the conductor wiring are electrically connected. Or
In the manufacturing method, a filter made of the same material as the wiring board is interposed between the infrared radiation lamp and the wiring board, and blocks infrared rays absorbed by the insulating substrate;
A method for manufacturing a semiconductor device that suppresses heat generation of the insulating substrate due to infrared irradiation. Further, in the above manufacturing method,
When a metal is used for the electrode on the wiring board, a film having an infrared absorbing property is formed below the electrode on the wiring board in order to suppress the infrared reflection on the metal mirror surface.
【０００７】[0007]
【作用】本発明の半導体装置とその製造方法によれば、
次に示す効果がある。 （１）半導体素子や配線基板を直接加熱することなし
に、絶縁性樹脂を硬化させることができるため、加圧ツ
ールやステージ等の熱歪を生じることなくボンディング
ができ、均一な接続を得ることができる。また、半導体
素子や配線基板間の熱応力も小さく、接続性や半導体素
子特性の劣化が極めて少なく、高い信頼性を有した半導
体装置が製造できる。 （２）紫外線照射による絶縁性樹脂の硬化方法では、使
用可能な配線基板が少なく限定されたり、シリコンやセ
ラミック基板等の不透明基板において、十分な硬化度が
えられず、硬化に長時間費やしていたものが、本発明の
赤外線を用いた硬化方法では絶縁性樹脂が半導体素子下
全面に均一に硬化するため、高い信頼性を有したものが
短時間で製造できる。また、配線基板の殆どが固有の赤
外線波長領域に対して透過性を有しているため、紫外線
に比べて使用可能な配線基板の種類が多い。According to the semiconductor device and the method of manufacturing the same of the present invention,
The following effects are obtained. (1) Since the insulating resin can be cured without directly heating the semiconductor element or the wiring substrate, bonding can be performed without generating thermal distortion of a pressing tool, a stage, and the like, and uniform connection can be obtained. Can be. In addition, a semiconductor device having small thermal stress between a semiconductor element and a wiring substrate, having extremely little deterioration in connectivity and semiconductor element characteristics, and having high reliability can be manufactured. (2) In the method of curing an insulating resin by irradiating ultraviolet rays, usable wiring boards are limited to a small number, or an opaque substrate such as a silicon or ceramic substrate cannot obtain a sufficient degree of curing, and it takes a long time to cure. However, according to the curing method using infrared light of the present invention, the insulating resin is uniformly cured over the entire surface under the semiconductor element, so that a highly reliable product can be manufactured in a short time. In addition, since most of the wiring boards have transparency in a unique infrared wavelength region, there are many types of wiring boards that can be used as compared with ultraviolet rays.
【０００８】[0008]
【実施例】以下本発明における、第一の実施例の半導体
装置とその製造方法について、図を参照しながら説明す
る。（図１）は、本発明の一実施例における半導体装置
の製造方法を示すものである。（表１）は、赤外線透過
材料について、赤外線透過波長領域と透過率を示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to a first embodiment of the present invention and a method for manufacturing the same will be described below with reference to the drawings. FIG. 1 shows a method for manufacturing a semiconductor device according to one embodiment of the present invention. Table 1 shows the infrared transmission wavelength region and the transmittance of the infrared transmission material.
【０００９】[0009]
【表１】 [Table 1]
【００１０】まず、（表１）に示したような赤外線透過
率が高い材料で構成された絶縁性基板１１上に導体配線
１２を具備させて、配線基板を形成する。次に、ガラス
や石英等の高い赤外線透過性を有するステージ１７上に
配線基板を設置し、突起電極１５を有した半導体素子１
６の突起電極１５を有する面と、配線基板の導体配線１
２を有する面を向かい合う形で配置させる。配線基板の
半導体素子１６を設置する部分に、２〜１５μｍの広い
赤外線波長領域で約０．９５の高い吸収率を有するＭｎ
Ｏ2、ＣｒＯ3、ＣｕＯ系の複合酸化物を含有させた熱硬
化型の絶縁性樹脂１４を塗布する。半導体素子１６や配
線基板の厚さは、０．５ｍｍ程度である。なお、シリコ
ンやＧｅ等の半導体を前記絶縁性基板として用る場合
は、その半導体上面に１μｍ以下のＳｉＯ2、やＳｉＮX
等の絶縁膜を形成する。次に半導体素子１６の突起電極
１５と配線基板の導体配線１２を一致させた後、半導体
素子１６を上部から加圧ツールにより加圧して電気的接
続をとる。その後、配線基板裏面側から赤外線放射ラン
プ２０にて赤外線を照射し、絶縁性樹脂１４を加熱す
る。この絶縁性樹脂１４の硬化メカニズムを（図２）、
（図３）のＢ部に示した。First, a wiring substrate is formed by providing a conductor wiring 12 on an insulating substrate 11 made of a material having a high infrared transmittance as shown in (Table 1). Next, a wiring substrate is placed on a stage 17 having a high infrared transmittance, such as glass or quartz, and the semiconductor element 1 having the protruding electrodes 15 is provided.
6 having the protruding electrodes 15 and the conductor wiring 1 of the wiring board.
The two faces are arranged face-to-face. Mn having a high absorptivity of about 0.95 in a wide infrared wavelength region of 2 to 15 μm is provided on a portion of the wiring board where the semiconductor element 16 is provided.
A thermosetting insulating resin 14 containing O2, CrO3, and CuO-based composite oxide is applied. The thickness of the semiconductor element 16 and the wiring board is about 0.5 mm. When a semiconductor such as silicon or Ge is used as the insulating substrate, SiO.sub.2 or SiNX of 1 .mu.m or less is formed on the upper surface of the semiconductor.
Is formed. Next, after the protruding electrode 15 of the semiconductor element 16 is made to coincide with the conductor wiring 12 of the wiring board, the semiconductor element 16 is pressurized from above by a pressing tool to make an electrical connection. After that, the insulating resin 14 is heated by irradiating infrared rays from the rear surface side of the wiring board with the infrared radiation lamp 20. The curing mechanism of the insulating resin 14 is shown in FIG.
This is shown in part B of FIG.
【００１１】配線基板を透過した赤外線は絶縁性樹脂１
４に照射され、絶縁性樹脂１４に含有させた高い赤外線
吸収性を有する材料に吸収される。吸収された赤外線は
熱エネルギーに変換され、熱硬化型の絶縁性樹脂１４は
数秒〜数十秒の短時間に約８０〜約１５０℃まで温度上
昇し、硬化収縮する。一般の絶縁性樹脂１４でも、赤外
線を吸収するが赤外波長領域の一部波長領域にしか吸収
帯がないため、総合的に赤外線吸収率が高くない。例え
ばシリコン基板とエポキシ系樹脂を用いた場合は、シリ
コン基板を透過する３．５〜６．５μｍの波長領域の中
でエポキシ系樹脂が赤外線を吸収する波長は、３．５μ
ｍ近辺に局所的に存在するのみで、その他の赤外線に対
しては赤外線吸収率は小さく、熱硬化性型の絶縁性樹脂
１４が硬化しにくい。そこで、上記の赤外線波長領域全
般に吸収率が高い材料を含有させることにより、配線基
板を透過した赤外線を、絶縁性樹脂１４に有効に吸収さ
せることが必要である。絶縁性樹脂１４に照射される赤
外線は、配線基板やステージ１７を透過した赤外線が照
射されるため、赤外線透過率が高い配線基板ほど絶縁性
樹脂１４に照射される赤外線が多くなる。上記シリコン
基板を用いた場合に、上記ＭｎＯ2、ＣｒＯ3、ＣｕＯ系
の複合酸化物を含有させた熱硬化型の絶縁性樹脂１４と
エポキシ系樹脂とを比較して、膜厚２０μｍ、シリコン
基板の透過波長領域を３．５〜６．５μｍと規定したと
きの熱硬化性樹脂に吸収される赤外線量を比較すると、
エポキシ系樹脂９％に対して、ＭｎＯ2、ＣｒＯ3、Ｃｕ
Ｏ系の複合酸化物を含有させた熱硬化性樹脂１４は９５
％と、約１０倍近く赤外線を吸収するため、樹脂の硬化
速度が今まで、数分から数十分費やしていたものが、数
秒から数十秒で硬化可能となる。The infrared light transmitted through the wiring board is the insulating resin 1
4 and is absorbed by a material having a high infrared absorption property contained in the insulating resin 14. The absorbed infrared rays are converted into heat energy, and the thermosetting insulating resin 14 rises in temperature to about 80 to about 150 ° C. in a short time of several seconds to several tens of seconds and cures and contracts. Although the general insulating resin 14 also absorbs infrared rays, it has an absorption band only in a part of the infrared wavelength range, so that the infrared absorption rate is not high overall. For example, when a silicon substrate and an epoxy-based resin are used, the wavelength at which the epoxy-based resin absorbs infrared rays in a wavelength region of 3.5 to 6.5 μm transmitting through the silicon substrate is 3.5 μm.
Only exists locally in the vicinity of m, the infrared ray absorptivity for other infrared rays is small, and the thermosetting insulating resin 14 is hard to cure. Therefore, it is necessary to allow the insulating resin 14 to effectively absorb the infrared light transmitted through the wiring board by including a material having a high absorption rate in the entire infrared wavelength region. As the infrared rays applied to the insulating resin 14 are the infrared rays transmitted through the wiring board and the stage 17, the infrared rays applied to the insulating resin 14 increase as the wiring board has higher infrared transmittance. When the silicon substrate is used, the thermosetting insulating resin 14 containing the MnO2, CrO3, and CuO-based composite oxides is compared with the epoxy resin to have a film thickness of 20 μm and a transmission through the silicon substrate. Comparing the amount of infrared light absorbed by the thermosetting resin when the wavelength region is defined as 3.5 to 6.5 μm,
MnO2, CrO3, Cu for 9% of epoxy resin
The thermosetting resin 14 containing the O-based composite oxide has 95
%, Which is about 10 times that of infrared rays, so that the curing speed of the resin, which has been spent several minutes to several tens of minutes, can be cured in several seconds to several tens of seconds.
【００１２】シリコンやゲルマニュウムやガラスエポキ
シ系等の配線基板は、赤外線波長領域の一部に吸収率の
高い波長領域を有しているため、ガラスや石英等に比較
して赤外線透過率が低い。この赤外線吸収率の高い波長
領域の赤外線は、配線基板に吸収されて配線基板を加熱
することになるため、半導体素子１６や配線基板間の熱
応力が生じ接続性や半導体素子１６の特性劣化の原因と
なる。そのため、このような配線基板を用いた場合は、
赤外線放射ランプ２０と配線基板との間に、配線基板と
同じ材質のフィルタ１９を介在させ、絶縁性基板に吸収
される赤外線を遮断し、赤外線照射による絶縁性基板の
発熱を抑える。絶縁性樹脂１４の硬化は、その収縮力に
より、半導体素子１６の突起電極１５と配電基板の基板
電極１３間の電気的接続を維持する役割と、半導体素子
１６を配線基板に固着する役割を持つ。A wiring board made of silicon, germanium, glass epoxy, or the like has a wavelength region having a high absorptance in a part of the infrared wavelength region, and thus has a lower infrared transmittance than glass, quartz, or the like. The infrared rays in the wavelength region having a high infrared absorptivity are absorbed by the wiring board and heat the wiring board, so that a thermal stress is generated between the semiconductor elements 16 and the wiring boards, thereby deteriorating the connectivity and the characteristics of the semiconductor elements 16. Cause. Therefore, when using such a wiring board,
A filter 19 made of the same material as the wiring substrate is interposed between the infrared radiation lamp 20 and the wiring substrate to block infrared light absorbed by the insulating substrate, thereby suppressing heat generation of the insulating substrate due to infrared irradiation. The curing of the insulating resin 14 has a role of maintaining an electrical connection between the protruding electrode 15 of the semiconductor element 16 and the substrate electrode 13 of the power distribution board and a role of fixing the semiconductor element 16 to the wiring board by the contraction force. .
【００１３】また、上記第一の実施例において、配線基
板上に形成された基板電極１３が金属の場合は、金属鏡
面での赤外線反射によって、基板電極１３上部では絶縁
性樹脂１４の硬化時間の遅れや未硬化が生じる場合があ
る。この場合は、（図２）、（図３）のＡ部に示した第
２の実施例のように、基板電極１３下面に赤外線吸収性
に優れた膜２１を形成したほうがよい。絶縁性基板１１
を透過した赤外線は、まずこの赤外線吸収性の膜２１に
吸収されて熱を発生し、発生した熱は高い熱伝導性を有
する金属を介して絶縁性樹脂１４に伝わり、熱硬化性の
絶縁性樹脂が硬化収縮する。この基板電極１３下面に設
けた赤外線吸収性の膜２１は、基板電極１３上部の樹脂
の硬化遅れや未硬化を防ぐだけでなく、突起電極１５周
辺の樹脂の硬化を促進し、突起電極１５下への樹脂の回
り込みを防ぐ役割を果たすため、接続性や信頼性の向上
に有用である。上記赤外線吸収性の膜には、２〜２５μ
mの広範囲な赤外線波長領域に対して０．９以上の高く
均一な吸収率を有するＳｉＣを添加したＳｉ3Ｎ4が適し
ている。In the first embodiment, when the substrate electrode 13 formed on the wiring substrate is made of metal, the curing time of the insulating resin 14 on the substrate electrode 13 is reduced by infrared reflection on the metal mirror surface. Delay and uncuring may occur. In this case, it is better to form a film 21 having excellent infrared absorption properties on the lower surface of the substrate electrode 13 as in the second embodiment shown in part A of FIGS. 2 and 3. Insulating substrate 11
Is transmitted to the insulating resin 14 via a metal having high thermal conductivity, and the generated heat is transferred to the insulating resin 14 through a metal having high thermal conductivity. The resin cures and shrinks. The infrared-absorbing film 21 provided on the lower surface of the substrate electrode 13 not only prevents the resin on the substrate electrode 13 from being hardened or hardened, but also promotes the hardening of the resin around the protruded electrode 15 and the Since it plays a role in preventing the resin from wrapping around, it is useful for improving connectivity and reliability. The infrared absorbing film has a thickness of 2 to 25 μm.
Si3N4 doped with SiC having a high and uniform absorptivity of 0.9 or more in a wide infrared wavelength region of m is suitable.
【００１４】なお、上記実施例において、赤外線に対し
て高い放射性を有する材料を、ＭｎＯ2、ＣｒＯ3、Ｃｕ
Ｏ系の複合酸化物としたが、Ｆｅ2Ｏ3、ＣｏＯ、コージ
ェライトの複合材料や、VI〜VIII族元素の金属酸化物を
複合させた材料としてもよい。In the above embodiment, the material having a high radiation property to infrared rays is MnO2, CrO3, Cu
Although an O-based composite oxide is used, a composite material of Fe2O3, CoO, and cordierite, or a composite material of a metal oxide of a group VI to VIII element may be used.
【００１５】なお、上記実施例において、ステージの材
料をガラスや石英としたが、配線基板と同じ材質のステ
ージを用いると、上記の赤外線フィルタの効果によっ
て、赤外線がステージに吸収されないため、効率よく絶
縁性樹脂を硬化できる。In the above embodiment, the stage is made of glass or quartz. However, if a stage made of the same material as the wiring substrate is used, infrared rays are not absorbed by the stage due to the effect of the above-mentioned infrared filter, so that the stage is efficiently used. Insulating resin can be cured.
【００１６】[0016]
【発明の効果】上記の半導体装置の製造方法によれば、
半導体素子や配線基板を直接加熱することなしに、絶縁
性樹脂を硬化させることができるため、加圧ツールやス
テージ等の熱歪を生じることなくボンディングができ、
均一な接続を得ることができる。また、半導体素子や配
線基板間の熱応力も小さく、接続性や半導体素子特性の
劣化が極めて少なく、高い信頼性を有した半導体装置が
製造できる。紫外線照射による不透明基板上の半導体素
子の実装には、絶縁性樹脂の硬化に長時間費やしていた
が、本発明の赤外線を用いた硬化方法では絶縁性樹脂が
半導体素子下全面に均一に硬化するため、高い信頼性を
有したものが短時間で製造できる。また、無機系の配線
基板の殆どが固有の赤外線波長領域に対して透過性を有
しているため、紫外線に比べて使用可能な配線基板の種
類も多く、実用性に適したものである。また、絶縁性樹
脂に含有された赤外線吸収性を有する材料は、赤外線の
放射性も良いことから、半導体素子主面で発生した熱が
この赤外線吸収性を有する材料に吸収され、赤外線に変
換されて配線基板側に放射されるために半導体素子温度
を下げる効果があり、放熱性の優れたものである。従っ
て、マイクロプロッセサーユニット等の高速デバイスの
実装に非常に有利である。According to the method of manufacturing a semiconductor device described above,
Since the insulating resin can be cured without directly heating the semiconductor element or the wiring board, bonding can be performed without generating thermal distortion of a pressing tool or a stage,
A uniform connection can be obtained. In addition, a semiconductor device having small thermal stress between a semiconductor element and a wiring substrate, having extremely little deterioration in connectivity and semiconductor element characteristics, and having high reliability can be manufactured. The mounting of the semiconductor element on the opaque substrate by irradiation with ultraviolet rays has long taken time to cure the insulating resin, but the curing method using infrared rays of the present invention uniformly cures the insulating resin over the entire surface under the semiconductor element. Therefore, a product having high reliability can be manufactured in a short time. In addition, since most of inorganic wiring boards have transparency in a specific infrared wavelength region, there are many types of wiring boards that can be used as compared with ultraviolet rays, which is suitable for practical use. In addition, since the material having an infrared absorbing property contained in the insulating resin has a good infrared radiation property, the heat generated on the main surface of the semiconductor element is absorbed by the material having the infrared absorbing property and converted into infrared light. The radiation to the wiring board side has an effect of lowering the temperature of the semiconductor element, and is excellent in heat dissipation. Therefore, it is very advantageous for mounting a high-speed device such as a microprocessor unit.
【図１】本発明の第１の実施例における、半導体装置と
その製造方法を示す断面図FIG. 1 is a sectional view showing a semiconductor device and a method of manufacturing the same according to a first embodiment of the present invention.
【図２】本発明の第２の実施例における、半導体装置と
その製造方法を示す断面図FIG. 2 is a sectional view showing a semiconductor device and a method of manufacturing the same according to a second embodiment of the present invention;
【図３】図１、図２に示した半導体装置の製造方法にお
ける絶縁性樹脂の硬化メカニズムを示した断面図FIG. 3 is a sectional view showing a curing mechanism of an insulating resin in the method of manufacturing the semiconductor device shown in FIGS. 1 and 2;
【図４】従来における、半導体装置とその製造方法の一
例を示した行程断面図FIG. 4 is a process sectional view showing an example of a conventional semiconductor device and a method of manufacturing the same.
【図５】図４に示した従来例における、絶縁性樹脂の熱
硬化方法を示した断面図FIG. 5 is a cross-sectional view showing a method of thermosetting an insulating resin in the conventional example shown in FIG.
【図６】図４に示した従来例における、絶縁性樹脂の紫
外線硬化方法を示した断面図FIG. 6 is a cross-sectional view showing a method of curing an insulating resin with ultraviolet light in the conventional example shown in FIG.
１１ 赤外線透過性を有する絶縁性基板 １２ 導体配線 １３ 基板電極 １４ 赤外線吸収性を有した材料を含有させた絶縁性樹
脂 １５ 突起電極 １６ 半導体素子 １７ 赤外線透過性を有するステージ １８ 加圧ツール １９ 赤外線フィルタ ２０ 赤外線放射ランプ ２１ 赤外線吸収性を有する膜REFERENCE SIGNS LIST 11 Insulating substrate having infrared transmitting property 12 Conductive wiring 13 Substrate electrode 14 Insulating resin containing material having infrared absorbing property 15 Protruding electrode 16 Semiconductor element 17 Stage having infrared transmitting property 18 Pressurizing tool 19 Infrared filter 20 Infrared radiation lamp 21 Infrared absorbing film
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−264444（ＪＰ，Ａ) 特開 昭59−193085（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 311 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-264444 (JP, A) JP-A-59-193085 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60 311
Claims (4)
は赤外線に対して透過性を有する絶縁性基板上に電極及
び配線を具備した配線基板上の前記半導体素子を設置す
る部分に、前記配線基板を透過する赤外線波長領域に対
して赤外線吸収性を有する材料を含有させた熱硬化型の
絶縁性樹脂を塗布する工程、前記半導体素子の前記突起
電極と前記配線基板の導体配線を一致させ、前記半導体
素子を前記配線基板に加圧する工程、前記配線基板の裏
面側から前記配線基板を透過させて赤外線を前記絶縁性
樹脂に照射し、前記絶縁性樹脂に含有させた赤外線吸収
性を有する材料を加熱することにより、前記絶縁性樹脂
を硬化し前記半導体素子を前記配線基板に固着するとと
もに、前記突起電極と前記導体配線を電気的な接続を得
る工程からなり、赤外線放射ランプと前記配線基板との
間に、前記配線基板と同じ材質のフィルタを介在させ、
前記絶縁性基板に吸収される赤外線波長領域の赤外線を
遮断し、赤外線照射による前記絶縁性基板の発熱を抑え
ることを特徴とする半導体装置の製造方法。An electrode is provided on a main surface of a semiconductor element having a protruding electrode or on an insulating substrate having transparency to infrared rays.
A thermosetting insulating resin containing a material having an infrared absorptivity for an infrared wavelength region transmitting through the wiring substrate is applied to a portion of the wiring substrate having wiring and wiring where the semiconductor element is to be installed. A step of aligning the projecting electrodes of the semiconductor element with the conductor wiring of the wiring board and pressing the semiconductor element against the wiring board, and transmitting the wiring board from the back side of the wiring board to insulate the infrared rays. By irradiating the insulating resin and heating the infrared absorbing material contained in the insulating resin, the insulating resin is cured and the semiconductor element is fixed to the wiring board, and the projecting electrode and the A step of obtaining electrical connection to the conductor wiring, interposing a filter of the same material as the wiring board between the infrared radiation lamp and the wiring board,
A method of manufacturing a semiconductor device, comprising: blocking infrared rays in an infrared wavelength region absorbed by the insulating substrate; and suppressing heat generation of the insulating substrate due to infrared irradiation.
設置される部分の電極を形成する部分に、赤外線を吸収
性を有する膜が形成され、その上に導電性の電極が形成
されたことを特徴とする請求項１記載の半導体装置の製
造方法。2. An infrared-absorbing film is formed on a portion of the insulating substrate on which an electrode is formed on a portion where a semiconductor element is provided, and a conductive electrode is formed thereon. The method for manufacturing a semiconductor device according to claim 1, wherein:
添加したＳｉ3Ｎ4とすることを特徴とする請求項２記載
の半導体装置の製造方法。3. The method of manufacturing a semiconductor device according to claim 2, wherein said film having an infrared absorbing property is made of Si3N4 to which SiC is added.
た熱硬化性の絶縁性樹脂を、ＭｎＯ2、ＣｒＯ3、ＣｕＯ
系の複合酸化物を含有させた絶縁性樹脂とするか、Ｆｅ
2Ｏ3、ＣｏＯ、コージェライトの複合材料や、VI〜VIII
族元素の金属酸化物を複合させた材料とすることを特徴
とする請求項１または２記載の半導体装置とその製造方
法。4. A thermosetting insulating resin containing a material having an infrared absorbing property, comprising MnO2, CrO3, CuO
Insulating resin containing system-based composite oxide or Fe
2O3, CoO, cordierite composite materials, VI-VIII
3. The semiconductor device according to claim 1, wherein the material is a composite material of a metal oxide of a group III element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4092518A JP3013589B2 (en) | 1992-04-13 | 1992-04-13 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4092518A JP3013589B2 (en) | 1992-04-13 | 1992-04-13 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05291351A JPH05291351A (en) | 1993-11-05 |
| JP3013589B2 true JP3013589B2 (en) | 2000-02-28 |
Family
ID=14056553
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4092518A Expired - Fee Related JP3013589B2 (en) | 1992-04-13 | 1992-04-13 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3013589B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109824A (en) * | 1991-10-15 | 1993-04-30 | Omron Corp | Method of mounting flip chip of electronic parts |
| JP3323395B2 (en) * | 1995-03-24 | 2002-09-09 | 松下電器産業株式会社 | Method of bonding IC components to flat panel display |
| JP2000195879A (en) * | 1998-12-25 | 2000-07-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| DE10046296C2 (en) * | 2000-07-17 | 2002-10-10 | Infineon Technologies Ag | Electronic chip component with an integrated circuit and method for its production |
| JP2009076595A (en) * | 2007-09-19 | 2009-04-09 | Canon Machinery Inc | Mounting device for electronic component |
| WO2010050062A1 (en) * | 2008-10-31 | 2010-05-06 | パイオニア株式会社 | Speaker manufacturing method |
| WO2010050063A1 (en) * | 2008-10-31 | 2010-05-06 | パイオニア株式会社 | Speaker manufacturing method |
| JP2011062963A (en) * | 2009-09-18 | 2011-03-31 | Canon Inc | Manufacturing method of liquid discharging head |
| JP2015065383A (en) * | 2013-09-26 | 2015-04-09 | パナソニックＩｐマネジメント株式会社 | Component mounting apparatus |
| JP6925021B2 (en) * | 2017-03-27 | 2021-08-25 | ナミックス株式会社 | Flip chip mounting method |
| WO2019065473A1 (en) * | 2017-09-28 | 2019-04-04 | 株式会社新川 | Mounting device and production method |
| JP7426693B2 (en) * | 2019-12-13 | 2024-02-02 | 日本パッケージ・システム株式会社 | RFID inlay |
| JP2023156541A (en) * | 2020-09-04 | 2023-10-25 | Tdk株式会社 | Bond structure |
-
1992
- 1992-04-13 JP JP4092518A patent/JP3013589B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JPH05291351A (en) | 1993-11-05 |
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