JP2871460B2 - シリコンのエッチング方法 - Google Patents

シリコンのエッチング方法

Info

Publication number
JP2871460B2
JP2871460B2 JP6106447A JP10644794A JP2871460B2 JP 2871460 B2 JP2871460 B2 JP 2871460B2 JP 6106447 A JP6106447 A JP 6106447A JP 10644794 A JP10644794 A JP 10644794A JP 2871460 B2 JP2871460 B2 JP 2871460B2
Authority
JP
Japan
Prior art keywords
etching
silicon
sample
rate
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP6106447A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07321092A (ja
Inventor
芳文 小川
久夫 安並
和典 辻本
誠 縄田
哲徳 加治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6106447A priority Critical patent/JP2871460B2/ja
Priority to TW084104844A priority patent/TW275704B/zh
Priority to SG1995000472A priority patent/SG32354A1/en
Priority to EP95303360A priority patent/EP0683510A1/en
Priority to KR1019950012507A priority patent/KR950034553A/ko
Publication of JPH07321092A publication Critical patent/JPH07321092A/ja
Application granted granted Critical
Publication of JP2871460B2 publication Critical patent/JP2871460B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP6106447A 1994-05-20 1994-05-20 シリコンのエッチング方法 Expired - Fee Related JP2871460B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6106447A JP2871460B2 (ja) 1994-05-20 1994-05-20 シリコンのエッチング方法
TW084104844A TW275704B (enrdf_load_stackoverflow) 1994-05-20 1995-05-16
SG1995000472A SG32354A1 (en) 1994-05-20 1995-05-18 Method of plasma etching
EP95303360A EP0683510A1 (en) 1994-05-20 1995-05-19 Method of plasma etching
KR1019950012507A KR950034553A (ko) 1994-05-20 1995-05-19 플라즈마 에칭방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6106447A JP2871460B2 (ja) 1994-05-20 1994-05-20 シリコンのエッチング方法

Publications (2)

Publication Number Publication Date
JPH07321092A JPH07321092A (ja) 1995-12-08
JP2871460B2 true JP2871460B2 (ja) 1999-03-17

Family

ID=14433877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6106447A Expired - Fee Related JP2871460B2 (ja) 1994-05-20 1994-05-20 シリコンのエッチング方法

Country Status (4)

Country Link
EP (1) EP0683510A1 (enrdf_load_stackoverflow)
JP (1) JP2871460B2 (enrdf_load_stackoverflow)
KR (1) KR950034553A (enrdf_load_stackoverflow)
TW (1) TW275704B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100239442B1 (ko) * 1996-12-26 2000-01-15 김영환 콘택홀 내의 전도성 플로그 형성방법
KR102109884B1 (ko) * 2018-05-17 2020-05-12 삼성전기주식회사 체적 음향 공진기 및 이의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799991A (en) * 1987-11-02 1989-01-24 Motorola, Inc. Process for preferentially etching polycrystalline silicon
US4832787A (en) * 1988-02-19 1989-05-23 International Business Machines Corporation Gas mixture and method for anisotropic selective etch of nitride
JPH0294520A (ja) 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
JPH0779102B2 (ja) 1990-08-23 1995-08-23 富士通株式会社 半導体装置の製造方法
KR100237687B1 (ko) * 1991-04-04 2000-01-15 가나이 쓰도무 드라이에칭 방법
JPH05267249A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法

Also Published As

Publication number Publication date
KR950034553A (ko) 1995-12-28
TW275704B (enrdf_load_stackoverflow) 1996-05-11
EP0683510A1 (en) 1995-11-22
JPH07321092A (ja) 1995-12-08

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Legal Events

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