JP2810444B2 - 結晶材料の微細加工方法 - Google Patents
結晶材料の微細加工方法Info
- Publication number
- JP2810444B2 JP2810444B2 JP1255504A JP25550489A JP2810444B2 JP 2810444 B2 JP2810444 B2 JP 2810444B2 JP 1255504 A JP1255504 A JP 1255504A JP 25550489 A JP25550489 A JP 25550489A JP 2810444 B2 JP2810444 B2 JP 2810444B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- etching
- region
- ion implantation
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002178 crystalline material Substances 0.000 title claims description 19
- 238000003672 processing method Methods 0.000 title claims description 9
- 238000005530 etching Methods 0.000 claims description 70
- 238000005468 ion implantation Methods 0.000 claims description 43
- 150000002500 ions Chemical class 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 30
- 238000010884 ion-beam technique Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 238000002513 implantation Methods 0.000 claims description 10
- 238000003486 chemical etching Methods 0.000 claims description 7
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 description 20
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910001423 beryllium ion Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- IRYJRGCIQBGHIV-UHFFFAOYSA-N trimethadione Chemical compound CN1C(=O)OC(C)(C)C1=O IRYJRGCIQBGHIV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1255504A JP2810444B2 (ja) | 1988-10-02 | 1989-09-29 | 結晶材料の微細加工方法 |
| EP89309977A EP0363099B1 (de) | 1988-10-02 | 1989-09-29 | Feinbearbeitungsmethode für kristallines Material |
| DE68925774T DE68925774T2 (de) | 1988-10-02 | 1989-09-29 | Feinbearbeitungsmethode für kristallines Material |
| US07/415,766 US4999083A (en) | 1988-10-02 | 1989-10-02 | Method of etching crystalline material with etchant injection inlet |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24781788 | 1988-10-02 | ||
| JP63-247817 | 1988-10-02 | ||
| JP1255504A JP2810444B2 (ja) | 1988-10-02 | 1989-09-29 | 結晶材料の微細加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02191326A JPH02191326A (ja) | 1990-07-27 |
| JP2810444B2 true JP2810444B2 (ja) | 1998-10-15 |
Family
ID=26538436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1255504A Expired - Fee Related JP2810444B2 (ja) | 1988-10-02 | 1989-09-29 | 結晶材料の微細加工方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4999083A (de) |
| EP (1) | EP0363099B1 (de) |
| JP (1) | JP2810444B2 (de) |
| DE (1) | DE68925774T2 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5437729A (en) * | 1993-04-08 | 1995-08-01 | Martin Marietta Energy Systems, Inc. | Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy |
| US5385630A (en) * | 1993-06-29 | 1995-01-31 | Digital Equipment Corporation | Process for increasing sacrificial oxide etch rate to reduce field oxide loss |
| EP0658924B1 (de) * | 1993-12-17 | 2000-07-12 | Canon Kabushiki Kaisha | Herstellungsverfahren einer Elektronen emittierenden Vorrichtung, einer Elektronenquelle und eine Bilderzeugungsvorrichtung |
| US5817243A (en) * | 1996-10-30 | 1998-10-06 | Shaffer; Wayne K. | Method for applying decorative contrast designs to automotive and motorcycle parts using lasers |
| IL124592A (en) | 1997-05-23 | 2002-07-25 | Gersan Ets | Method of marking a gemstone or diamond |
| KR100587273B1 (ko) * | 1999-06-24 | 2006-06-08 | 엘지전자 주식회사 | 그라스의 이방성 에칭방법 및 이를 이용한 평판표시장치의 격벽 제조 방법 |
| JP4786783B2 (ja) * | 2000-08-18 | 2011-10-05 | 日本板硝子株式会社 | ガラス板の切断方法及び記録媒体用ガラス円盤 |
| JP4178741B2 (ja) * | 2000-11-02 | 2008-11-12 | 株式会社日立製作所 | 荷電粒子線装置および試料作製装置 |
| DE10163346A1 (de) * | 2001-12-21 | 2003-07-10 | Infineon Technologies Ag | Resistloses Lithographieverfahren zur Herstellung feiner Strukturen |
| CA2408483C (en) * | 2002-10-17 | 2011-01-04 | Yujie Han | Laser chemical fabrication of nanostructures |
| JP2006239787A (ja) * | 2005-03-01 | 2006-09-14 | National Institute Of Advanced Industrial & Technology | 微細構造作製方法及び装置 |
| US8815720B2 (en) * | 2011-04-12 | 2014-08-26 | Varian Semiconductor Equipment Associates, Inc. | Method of etching a workpiece |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS568495B2 (de) * | 1972-07-24 | 1981-02-24 | ||
| JPS5639052B2 (de) * | 1972-12-29 | 1981-09-10 | ||
| DE2554638A1 (de) * | 1975-12-04 | 1977-06-16 | Siemens Ag | Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante |
| JPS53138286A (en) * | 1977-05-10 | 1978-12-02 | Sony Corp | Manufacture of semiconductor device |
| US4264382A (en) * | 1978-05-25 | 1981-04-28 | International Business Machines Corporation | Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions |
| JPS5621331A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Manufcture of semiconductor device |
| US4450041A (en) * | 1982-06-21 | 1984-05-22 | The United States Of America As Represented By The Secretary Of The Navy | Chemical etching of transformed structures |
| DE3337227A1 (de) * | 1983-10-13 | 1985-04-25 | Gesellschaft für Schwerionenforschung mbH Darmstadt, 6100 Darmstadt | Verfahren zum bestimmen des durchmessers von mikroloechern |
| JPS60128622A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | エツチング法 |
| US4523971A (en) * | 1984-06-28 | 1985-06-18 | International Business Machines Corporation | Programmable ion beam patterning system |
| DD238468A1 (de) * | 1985-06-18 | 1986-08-20 | Akad Wissenschaften Ddr | Kernspurmikrofilter mit integrierterm vorfilter und verfahren zur seiner herstellung |
| US4888300A (en) * | 1985-11-07 | 1989-12-19 | Fairchild Camera And Instrument Corporation | Submerged wall isolation of silicon islands |
| JPH0831441B2 (ja) * | 1986-12-04 | 1996-03-27 | 株式会社日立製作所 | 表面処理方法 |
-
1989
- 1989-09-29 DE DE68925774T patent/DE68925774T2/de not_active Expired - Fee Related
- 1989-09-29 EP EP89309977A patent/EP0363099B1/de not_active Expired - Lifetime
- 1989-09-29 JP JP1255504A patent/JP2810444B2/ja not_active Expired - Fee Related
- 1989-10-02 US US07/415,766 patent/US4999083A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02191326A (ja) | 1990-07-27 |
| US4999083A (en) | 1991-03-12 |
| DE68925774D1 (de) | 1996-04-04 |
| EP0363099A1 (de) | 1990-04-11 |
| EP0363099B1 (de) | 1996-02-28 |
| DE68925774T2 (de) | 1996-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |