DE68925774D1 - Feinbearbeitungsmethode für kristallines Material - Google Patents

Feinbearbeitungsmethode für kristallines Material

Info

Publication number
DE68925774D1
DE68925774D1 DE68925774T DE68925774T DE68925774D1 DE 68925774 D1 DE68925774 D1 DE 68925774D1 DE 68925774 T DE68925774 T DE 68925774T DE 68925774 T DE68925774 T DE 68925774T DE 68925774 D1 DE68925774 D1 DE 68925774D1
Authority
DE
Germany
Prior art keywords
crystalline material
finishing method
finishing
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925774T
Other languages
English (en)
Other versions
DE68925774T2 (de
Inventor
Nobuo Watanabe
Takeo Tsukamoto
Toshihiko Takeda
Haruhito Ono
Masahiko Okunuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE68925774D1 publication Critical patent/DE68925774D1/de
Application granted granted Critical
Publication of DE68925774T2 publication Critical patent/DE68925774T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
DE68925774T 1988-10-02 1989-09-29 Feinbearbeitungsmethode für kristallines Material Expired - Fee Related DE68925774T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24781788 1988-10-02
JP1255504A JP2810444B2 (ja) 1988-10-02 1989-09-29 結晶材料の微細加工方法

Publications (2)

Publication Number Publication Date
DE68925774D1 true DE68925774D1 (de) 1996-04-04
DE68925774T2 DE68925774T2 (de) 1996-08-08

Family

ID=26538436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925774T Expired - Fee Related DE68925774T2 (de) 1988-10-02 1989-09-29 Feinbearbeitungsmethode für kristallines Material

Country Status (4)

Country Link
US (1) US4999083A (de)
EP (1) EP0363099B1 (de)
JP (1) JP2810444B2 (de)
DE (1) DE68925774T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5437729A (en) * 1993-04-08 1995-08-01 Martin Marietta Energy Systems, Inc. Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy
US5385630A (en) * 1993-06-29 1995-01-31 Digital Equipment Corporation Process for increasing sacrificial oxide etch rate to reduce field oxide loss
DE69425230T2 (de) * 1993-12-17 2001-02-22 Canon Kk Herstellungsverfahren einer Elektronen emittierenden Vorrichtung, einer Elektronenquelle und eine Bilderzeugungsvorrichtung
US5817243A (en) * 1996-10-30 1998-10-06 Shaffer; Wayne K. Method for applying decorative contrast designs to automotive and motorcycle parts using lasers
IL124592A (en) 1997-05-23 2002-07-25 Gersan Ets Method of marking a gemstone or diamond
KR100587273B1 (ko) * 1999-06-24 2006-06-08 엘지전자 주식회사 그라스의 이방성 에칭방법 및 이를 이용한 평판표시장치의 격벽 제조 방법
JP4786783B2 (ja) * 2000-08-18 2011-10-05 日本板硝子株式会社 ガラス板の切断方法及び記録媒体用ガラス円盤
JP4178741B2 (ja) * 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
DE10163346A1 (de) * 2001-12-21 2003-07-10 Infineon Technologies Ag Resistloses Lithographieverfahren zur Herstellung feiner Strukturen
US6864190B2 (en) * 2002-10-17 2005-03-08 National Research Council Of Canada Laser chemical fabrication of nanostructures
JP2006239787A (ja) * 2005-03-01 2006-09-14 National Institute Of Advanced Industrial & Technology 微細構造作製方法及び装置
US8815720B2 (en) * 2011-04-12 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Method of etching a workpiece

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568495B2 (de) * 1972-07-24 1981-02-24
JPS5639052B2 (de) * 1972-12-29 1981-09-10
DE2554638A1 (de) * 1975-12-04 1977-06-16 Siemens Ag Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante
JPS53138286A (en) * 1977-05-10 1978-12-02 Sony Corp Manufacture of semiconductor device
US4264382A (en) * 1978-05-25 1981-04-28 International Business Machines Corporation Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions
JPS5621331A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufcture of semiconductor device
US4450041A (en) * 1982-06-21 1984-05-22 The United States Of America As Represented By The Secretary Of The Navy Chemical etching of transformed structures
DE3337227A1 (de) * 1983-10-13 1985-04-25 Gesellschaft für Schwerionenforschung mbH Darmstadt, 6100 Darmstadt Verfahren zum bestimmen des durchmessers von mikroloechern
JPS60128622A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd エツチング法
US4523971A (en) * 1984-06-28 1985-06-18 International Business Machines Corporation Programmable ion beam patterning system
DD238468A1 (de) * 1985-06-18 1986-08-20 Akad Wissenschaften Ddr Kernspurmikrofilter mit integrierterm vorfilter und verfahren zur seiner herstellung
US4888300A (en) * 1985-11-07 1989-12-19 Fairchild Camera And Instrument Corporation Submerged wall isolation of silicon islands
JPH0831441B2 (ja) * 1986-12-04 1996-03-27 株式会社日立製作所 表面処理方法

Also Published As

Publication number Publication date
EP0363099B1 (de) 1996-02-28
EP0363099A1 (de) 1990-04-11
DE68925774T2 (de) 1996-08-08
JPH02191326A (ja) 1990-07-27
US4999083A (en) 1991-03-12
JP2810444B2 (ja) 1998-10-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee