JP2785444B2 - Semiconductor device, manufacturing method thereof, and electronic circuit device using semiconductor device - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for a wide variety of electronic devices, a method for manufacturing the same, and an electronic circuit device using the semiconductor device.

2. Description of the Related Art In recent years, as the demands for miniaturization, higher performance, and higher functionality of electronic devices have increased, the importance of high-density packaging technology for semiconductor devices has been increasing.

Under such circumstances, recently, as a mounting method aimed at increasing the density of semiconductor elements, a mounting technique based on a TAB method or a flip chip method has been increasingly used.

In general, the TAB method uses thermocompression bonding between a finger-like copper foil pattern (tin-plated) provided on a polyimide film and a semiconductor IC chip provided with gold bumps on external connection terminals.
It is electrically connected by forming a eutectic of -Sn.

On the other hand, in the flip chip method, as shown in FIG. 4, the external connection terminal layer made of aluminum of the semiconductor IC chip 21 is formed.
A circuit board 22 on which bumps (projection electrode layers) 23 of gold or solder are formed in the same manner as the TAB method, and the semiconductor IC chip 21 is provided with a circuit conductor layer 24 for connection by a face-down method.
25, a solder 26 is directly connected by solder reflow method or the like.

SUMMARY OF THE INVENTION In such a conventional semiconductor device and a method of manufacturing the same, in the former TAB method, a pitch of a finger-shaped copper foil pattern for an inner lead or a copper foil pattern for an outer lead is formed on a polyimide film. Since the accuracy is difficult to obtain and the external connection terminal layer 22 of the semiconductor IC chip 21 must be formed along the four peripheral edges of the chip, the chip size increases as the number of connection terminals increases, resulting in higher density. There is a problem that it is difficult to implement.

On the other hand, the latter flip-chip mounting method increases the degree of freedom in semiconductor circuit design because the external connection terminal layer 22 of the semiconductor IC chip 21 can be configured at an arbitrary position on the semiconductor IC chip 21. Since the connection terminal layer 22 and the circuit conductor layer 24 of the circuit board 25 to be mounted are directly connected one-to-one, it is convenient for increasing the density of the circuit, but the material of the circuit board 25 to be mounted is a semiconductor IC. If the chip (silicon) 21 does not have the same coefficient of thermal expansion, it is difficult to ensure the reliability of electrical connection due to thermal shock and the like. Therefore, a flip chip using a normal printed wiring board such as glass epoxy as a circuit board material There is a problem that it cannot be implemented by the method.

Further, since the flip-chip method is mounted on the circuit board 25 by the face-down method, it is extremely difficult to fill a gap between the semiconductor IC chip 21 and the circuit board 25 with a moisture-resistant resin in a mounted state. Has a problem that it is difficult to secure the reliability, especially the moisture resistance.

The present invention solves the above-mentioned problems, and is a semiconductor device that can be mounted at high density on a resin-based printed wiring board such as glass epoxy, which is generally most widely used, and has excellent moisture resistance and connection reliability. And an electronic circuit device using the semiconductor device.

Means for Solving the Problems In order to achieve the above object, the present invention provides a rigid substrate having a concave portion and at least an external connection terminal layer provided on a predetermined surface portion embedded in the concave portion so that the surface is flush with the rigid substrate. A semiconductor IC chip provided with an insulating resin layer having an opening in an external connection terminal layer formed on the surface of the semiconductor IC chip and the surface of the rigid substrate, and an insulating resin layer including the external connection terminal layer in the opening A circuit conductor layer having a pattern formed thereon, an insulating solder resist layer having an opening in a predetermined portion formed on the circuit conductor layer, and a circuit conductor layer formed on the opening of the solder resist layer. It has a configuration having a protruding external electrode layer.

Function The present invention can provide an external connection terminal layer at an arbitrary position on an insulating resin layer coated on a semiconductor IC chip and a rigid substrate by the above-described configuration, and is not easily affected by humidity, and can be printed. Even if the wiring board and the solder layer are connected to each other, the connection is hardly affected by the thermal shock.

Embodiment An embodiment of the present invention will be described below with reference to FIGS. 1, 2, and 3. FIG.

In FIG. 1, 1 is a semiconductor IC chip, and 2 is a semiconductor IC.
The external connection terminal layer 3 of the chip 1 is a hard substrate, 4 is an insulating resin layer, 5 is a circuit conductor layer, 6 is an insulating solder resist layer, and 7 is a protruding external electrode layer.

The manufacturing method of the semiconductor device configured as described above will be described in detail below.

In the present embodiment, first, as shown in FIG.
A recess 3a having substantially the same outer dimensions as the semiconductor IC chip 1 of FIG. 1 is formed at a substantially central portion of the semiconductor IC chip 1 already cut into a predetermined size by dicing in the recess 3a. With a rigid substrate 3
Was fixed with an adhesive or the like so as to be flush with the surface.

In this case, the semiconductor IC chip 1 has its external connection terminal layer 2
In order to compose the aluminum electrode pad portion, a metal layer of chromium, titanium, nickel, palladium or the like is coated as a barrier metal layer in advance by a vacuum deposition method or an electroless plating method, or the surface of the barrier metal layer is coated with copper. ,
A metal such as gold formed into a projection by plating,
Furthermore, various electrode structures such as those in which gold or copper bumps were directly formed on the pads by a ball bonding method were used.

The rigid substrate 3 in contact with the semiconductor IC chip 1 was made of various materials depending on the purpose. That is, when manufacturing a semiconductor device having good heat dissipation, a concave portion 3a into which the semiconductor IC chip 1 is to be fitted is provided at the center by etching or mechanical cutting using a metal such as aluminum, copper, or nickel. The semiconductor IC chip 1 was fixed to the recess 3a with an adhesive having excellent thermal conductivity.

Further, in the case of a semiconductor device which does not need to consider heat dissipation, the concave portion 3a is partially cut by a mechanical cutting method using, for example, an epoxy resin or a triazine resin as a thermosetting resin having high heat resistance. Or a heat-resisting resin having high heat resistance such as polysulfone resin, polyethersulfone resin, polyphenylene sulfide resin, polyamideimide resin, polyetherimide resin, polyetheretherketone. resin,
Using a polyimide resin, a fluorine resin, a liquid crystal polyester resin, or the like, a rigid substrate 3 partially provided with a concave portion 3a was formed by an injection molding method.

After bonding the semiconductor IC chip 1 to the recess 3a with the semiconductor IC chip 1 facing upward on the rigid substrate 3 partially provided with the recess 3a, as shown in FIG.
Is coated and cured, and the portion of the insulating resin layer 4 corresponding to the external connection terminal layer 2 of the semiconductor IC chip 1 is removed to expose the external connection terminal layer 2 covered with the barrier metal layer of the semiconductor IC chip 1. I let it.

In this case, the insulating resin layer 4 is preferably made of a resin having high purity and photosensitivity, and excellent in heat resistance and electrical insulation. In this embodiment, a photosensitive polyimide resin or epoxy resin is used as an insulating resin meeting this purpose. And acrylic resin.

Then, a conductive metal layer made of copper or nickel metal is formed on the surface of the insulating resin layer 4 by vacuum evaporation, ion plating, electroless plating, or the like, including the external connection terminal layer 2 of the semiconductor IC chip 1. After forming a film on the entire surface of the resin layer 4 and then dissolving and removing the conductive metal layer unnecessarily by a photo-etching method or the like to form the circuit conductor layer 5 in a desired pattern, the circuit conductor layer 5 having the pattern Is covered with an insulating solder resist layer 6 except for the portion where the projecting external electrode layer is formed, and a metal layer such as copper or nickel is selectively thickened on the exposed circuit conductor layer 5. The external electrode layer 7 was formed to complete the semiconductor device.

In the semiconductor device obtained by this method, the external electrode layer 7 can be formed at an arbitrary position on the solder resist layer 6, so that the device can be downsized. Has a configuration in which the insulating solder resist layer 6 is covered, so that a semiconductor device having particularly excellent humidity resistance is obtained.

FIG. 3 is a sectional view of a main part of an electronic circuit device in which a plurality of semiconductor devices obtained by this method are mounted on a printed wiring board to constitute an electronic circuit device.

In FIG. 3, the same portions as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. That is, 8 is an electronic circuit device, 9 is a printed wiring board, 10 is a circuit conductor layer of the printed wiring board 9,
11 is a solder layer.

The electronic circuit device 8 includes a printed wiring board 9 made of a synthetic resin-based substrate such as glass epoxy and a protruding external electrode formed in an opening of an insulating solder resist layer 6 covering the surface of the semiconductor IC chip 1. Since the layer 7 is connected by the solder layer 11, the reliability of the solder connection due to the difference in thermal expansion coefficient between the printed circuit board 9 and the thermal expansion coefficient when the electronic circuit device 8 is miniaturized and increased in density and subjected to thermal shock, etc. Deterioration is eliminated.

Advantages of the Invention As is apparent from the above embodiments, according to the present invention, at least an external connection terminal layer and the like are provided on a hard substrate having a concave portion and a predetermined surface embedded in the concave portion so that the surface is flush with the rigid substrate. A semiconductor IC chip provided with: an insulating resin layer having an opening in the external connection terminal layer formed on the surface of the semiconductor IC chip and the surface of the rigid substrate; and an external connection terminal layer having the opening. A circuit conductor layer having a pattern formed on an insulating resin layer, an insulating solder resist layer having an opening in a predetermined portion formed on the circuit conductor layer, and the circuit conductor layer having an opening in the solder resist layer The external connection terminal layer can be configured at any position on the surface of the insulating resin layer, and the surface of the semiconductor IC chip is covered with the insulating resin layer. What Thus, a small and highly moisture-resistant semiconductor device can be provided.

Further, since the external connection terminal layer is formed on the surface of the insulating resin layer, the semiconductor device can be directly soldered and mounted on a resin-based printed wiring board such as glass epoxy by a face-down method to form an electronic circuit device. Since the printed wiring board and the semiconductor device have the same thermal expansion coefficient, it is possible to provide an electronic circuit device that does not impair the reliability of connection in a thermal shock test.

[Brief description of the drawings]

FIG. 1 is a sectional view of a main part of a semiconductor device according to an embodiment of the present invention,
FIG. 2 is a perspective view of a rigid substrate used in the device, FIG. 3 is a sectional view of a main part of an electronic circuit device in which the semiconductor device according to the present invention is mounted on a printed wiring board, and FIG. It is principal part sectional drawing. DESCRIPTION OF SYMBOLS 1 ... Semiconductor IC chip, 2 ... External connection terminal layer of semiconductor IC chip, 3 ... Hard board, 3a ... Recess of hard lending board, 4 ... Insulating resin layer, 5 ... Circuit conductor layer, 6: an insulating solder resist layer; 7: a protruding external electrode layer.

Claims (3)

(57) [Claims] 1. A semiconductor IC having a hard substrate having a concave portion, and at least an external connection terminal layer provided at a predetermined surface portion embedded in the concave portion so as to have the same surface.
A chip, an insulating resin layer having an opening in the external connection terminal layer formed on the surface of the semiconductor IC chip and the surface of the hard substrate, and on the insulating resin layer including the external connection terminal layer in the opening A circuit conductor layer patterned on the circuit conductor layer, an insulating solder resist layer having an opening in a predetermined portion formed on the circuit conductor layer, and an insulating solder resist layer formed on the circuit conductor layer in the opening of the solder resist layer. A semiconductor device having a protruding external electrode layer. 2. A semiconductor IC chip having at least an external connection terminal layer provided on a predetermined portion of one main surface with the one main surface facing upward, and the one main surface and the surface of a hard substrate having a concave portion are flush with each other. A step of embedding and fixing in the recess, and a step of patterning an insulating resin layer on the surface of the semiconductor IC chip on the same surface and the surface of the hard substrate except for an opening on the external connection terminal layer. Patterning a circuit conductor layer on the insulating resin layer including the external connection terminal layer in the opening; and patterning an insulating solder resist layer having an opening in a predetermined portion on the circuit conductor layer. A method for manufacturing a semiconductor device, comprising: a step of forming a protruding external electrode layer on the circuit conductor layer in an opening of the solder resist layer. 3. An electronic circuit device according to claim 1, wherein the protruding external electrode layer of the semiconductor device is connected to a circuit conductor layer patterned on a printed wiring board via a solder layer.