JP2758769B2 - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method

Info

Publication number
JP2758769B2
JP2758769B2 JP4042650A JP4265092A JP2758769B2 JP 2758769 B2 JP2758769 B2 JP 2758769B2 JP 4042650 A JP4042650 A JP 4042650A JP 4265092 A JP4265092 A JP 4265092A JP 2758769 B2 JP2758769 B2 JP 2758769B2
Authority
JP
Japan
Prior art keywords
resin
cavity
semiconductor device
lead frame
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4042650A
Other languages
Japanese (ja)
Other versions
JPH05243301A (en
Inventor
直人 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP4042650A priority Critical patent/JP2758769B2/en
Publication of JPH05243301A publication Critical patent/JPH05243301A/en
Application granted granted Critical
Publication of JP2758769B2 publication Critical patent/JP2758769B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は半導体装置の製造方法に
関し、特にプラスチックパッケージの封止方法に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for sealing a plastic package.

【0002】[0002]

【従来の技術】従来のプラスチックパッケージの封止方
法は、図4の断面図に示す様に、チップ(半導体素子)
6が搭載されたリードフレーム7を下金型のキャビティ
1上に載置し、上金型9を重ねて型締めし、この上下金
型で形成されるキャビティ内にセンタポット3で加熱加
圧された溶融樹脂をゲート2を経て注入することにより
封止を行っていた。
2. Description of the Related Art A conventional plastic package sealing method uses a chip (semiconductor element) as shown in a sectional view of FIG.
The lead frame 7 on which the mold 6 is mounted is placed on the cavity 1 of the lower mold, the upper mold 9 is overlaid and clamped, and the center pot 3 heats and presses the cavity formed by the upper and lower molds. The sealing was performed by injecting the melted resin through the gate 2.

【0003】[0003]

【発明が解決しようとする課題】従来の半導体装置製造
方法では、前述のように下型のキャビティ1にリードフ
レーム7を載置後型締めし樹脂を注入しているため、こ
のリードフレームによる影響さらにゲート2の注入角度
の影響等により、キャビティに流入する樹脂の充填状態
が均一でなく、特に下型のキャビティ1の底面部にボイ
ド16が発生するという問題点があった。
In the conventional method for manufacturing a semiconductor device, as described above, after the lead frame 7 is placed in the lower cavity 1, the mold clamping resin is injected. Furthermore, due to the influence of the injection angle of the gate 2 and the like, the filling state of the resin flowing into the cavity is not uniform, and there is a problem that voids 16 are generated particularly on the bottom surface of the lower cavity 1.

【0004】[0004]

【課題を解決するための手段】本発明は、図2(a)に
示すように、キャビティ1に多層構造の固形樹脂12を
予め供給した後溶融させ、リードフレーム7を載置して
型締めし樹脂を注入するという製造方法である。
According to the present invention, as shown in FIG. 2 (a), a solid resin 12 having a multilayer structure is supplied to a cavity 1 in advance, melted, a lead frame 7 is placed thereon, and a mold is clamped. This is a manufacturing method of injecting resin.

【0005】次に本発明について図面を参照して説明す
る。図1は本発明の関連技術を工程順に示す図で、同図
(a)〜(e)はそれぞれ断面図である。同図(a)は
関連技術で使用する下金型をセットした状態を示し、
この金型にはキャビティ1、ゲート2、センタポット3
を有する。同図(b)では、キャビティ1に樹脂供給ノ
ズル4からエポキシ樹脂の粉末樹脂5を供給する状況を
示している。同図(c)は、アイランド8上にチップ6
を搭載したリードフレーム7をキャビティ1上に載置し
た状態を示している。この時に粉末樹脂5は加熱された
金型により溶融状態にある。同図(d)は上金型9を重
ねて型締めし、センタポット3に供給されたエポキシ樹
脂からなるタブレット樹脂10に圧力を加えて溶融させ
注入する状態を示す。同図(e)は樹脂成形が完了した
状態を示す。
Next, the present invention will be described with reference to the drawings. FIGS. 1A to 1E show the related art of the present invention in the order of steps, and FIGS. 1A to 1E are cross-sectional views. FIG. 1A shows a state in which a lower mold used in the related technique is set.
This mold has cavity 1, gate 2, center pot 3
Having. FIG. 2B shows a state in which the epoxy resin powder resin 5 is supplied from the resin supply nozzle 4 to the cavity 1. FIG. 3C shows the chip 6 on the island 8.
2 shows a state in which a lead frame 7 on which the device is mounted is placed on the cavity 1. At this time, the powder resin 5 is in a molten state by the heated mold. FIG. 3D shows a state in which the upper mold 9 is overlaid and clamped, and the tablet resin 10 made of epoxy resin supplied to the center pot 3 is melted and injected by applying pressure. FIG. 7E shows a state in which the resin molding has been completed.

【0006】[0006]

【実施例】 次に図2は本発明の一実施例を工程順に示
す。同図(a)、(b)はそれぞれ断面図である。ま
ず、図3の断面図に示すように、固形樹脂12を使用す
る。固形樹脂12は、その密度が樹脂粗部分13、樹脂
中間部14及び樹脂密部分15の三層で構成される。固
形層の形成は圧力を変えることにより容易に形成でき
る。まず、同図(a)に示すように、キャビティ1に固
形樹脂12を供給し、リードフレーム7を載置し、セン
タポット3から樹脂を注入する。樹脂注入前に固形樹脂
12は溶融状態にある。三層構造にしたのは溶融を促進
するためである。同図(b)は樹脂成形が完了した状態
である。
EXAMPLES Next Figure 2 shows one embodiment of the present invention in order of steps. 2A and 2B are cross-sectional views. First, as shown in the sectional view of FIG. 3, a solid resin 12 is used. The solid resin 12 has a density of three layers: a resin coarse portion 13, a resin intermediate portion 14, and a resin dense portion 15. The solid layer can be easily formed by changing the pressure. First, as shown in FIG. 1A, the solid resin 12 is supplied to the cavity 1, the lead frame 7 is placed, and the resin is injected from the center pot 3. Before the injection of the resin, the solid resin 12 is in a molten state. The three-layer structure is used to promote melting. FIG. 2B shows a state in which the resin molding has been completed.

【0007】[0007]

【発明の効果】以上説明したように本発明は、キャビテ
ィ下部のボイドが発生しやすい個所に予め固形樹脂を供
給して溶融させておき、その後通常の樹脂を注入するの
でボイドの発生を回避できるという効果がある。
As described above, according to the present invention, a solid resin is supplied and melted in advance at a portion where a void is likely to be generated in the lower portion of the cavity, and then the ordinary resin is injected, so that the generation of a void can be avoided. This has the effect.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の関連技術を工程順に示す図で、同図
(a)〜(e)はそれぞれ断面図である。
FIGS. 1A to 1E are views showing a related technique of the present invention in the order of steps, and FIGS. 1A to 1E are cross-sectional views.

【図2】本発明の実施例を工程順に示す図で、同図
(a)、(b)はそれぞれ断面図である。
FIG. 2 is a view showing an embodiment of the present invention in the order of steps, and FIGS. 2 (a) and 2 (b) are cross-sectional views.

【図3】本発明の実施例に用いる固形樹脂の断面図で
ある。
FIG. 3 is a sectional view of a solid resin used in one embodiment of the present invention.

【図4】従来の製造方法を説明する断面図である。FIG. 4 is a cross-sectional view illustrating a conventional manufacturing method.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 半導体素子を搭載したリードフレームを
上下金型ではさんでキャビティに樹脂を注入する半導体
装置製造方法において、前記リードフレームの載置前に
キャビティ内に多層構造の固形樹脂を供給し、その後キ
ャビティ内に溶融樹脂を注入して樹脂成形を行うことを
特徴とする半導体装置製造方法。
1. A method of manufacturing a semiconductor device in which a lead frame mounting a semiconductor element is sandwiched between upper and lower molds to inject resin into a cavity, wherein a solid resin having a multilayer structure is supplied into the cavity before the lead frame is mounted. A method of manufacturing a semiconductor device, comprising: injecting a molten resin into a cavity to perform resin molding.
【請求項2】 前記多層構造の固形樹脂は、各層の樹脂
密度がキャビティ底面に接する側を密として順次密から
粗に変化していることを特徴とする請求項1記載の半導
体装置製造方法。
2. A solid resin of the multilayer structure, from sequential dense side resin density of each layer is in contact with the cavity bottom face as tightly
2. The method according to claim 1, wherein the change is a rough change.
JP4042650A 1992-02-28 1992-02-28 Semiconductor device manufacturing method Expired - Lifetime JP2758769B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4042650A JP2758769B2 (en) 1992-02-28 1992-02-28 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4042650A JP2758769B2 (en) 1992-02-28 1992-02-28 Semiconductor device manufacturing method

Publications (2)

Publication Number Publication Date
JPH05243301A JPH05243301A (en) 1993-09-21
JP2758769B2 true JP2758769B2 (en) 1998-05-28

Family

ID=12641890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4042650A Expired - Lifetime JP2758769B2 (en) 1992-02-28 1992-02-28 Semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JP2758769B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4741383B2 (en) 2006-02-17 2011-08-03 富士通セミコンダクター株式会社 Resin sealing method for electronic parts
US7993092B2 (en) 2007-08-14 2011-08-09 Samsung Electronics Co., Ltd. Moving carrier for lead frame and method of moving lead frame using the moving carrier
JP5308108B2 (en) * 2008-09-11 2013-10-09 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Circuit device manufacturing method
JP5308107B2 (en) * 2008-09-11 2013-10-09 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Circuit device manufacturing method
JP2012004435A (en) * 2010-06-18 2012-01-05 On Semiconductor Trading Ltd Method for manufacturing circuit device and resin sealing device
JP5824765B2 (en) * 2011-01-11 2015-12-02 アピックヤマダ株式会社 Resin molding method, resin molding apparatus, and supply handler
JP5953600B2 (en) * 2011-08-12 2016-07-20 アピックヤマダ株式会社 Resin supply device, resin mold device, and resin supply method
JP5891544B2 (en) * 2011-10-14 2016-03-23 アピックヤマダ株式会社 Resin sealing device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138039A (en) * 1982-02-10 1983-08-16 Nec Home Electronics Ltd Manufacture of resin sealed type semiconductor device
JPH05102216A (en) * 1991-10-09 1993-04-23 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH05243301A (en) 1993-09-21

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Effective date: 19980210