TW202038349A - Resin sealing device and resin sealing method for avoiding generation of insufficient bottom filling, voids, bubbles, and other molding defects even for larger semiconductor chips - Google Patents
Resin sealing device and resin sealing method for avoiding generation of insufficient bottom filling, voids, bubbles, and other molding defects even for larger semiconductor chips Download PDFInfo
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- 239000011347 resin Substances 0.000 title claims abstract description 140
- 229920005989 resin Polymers 0.000 title claims abstract description 140
- 238000007789 sealing Methods 0.000 title claims abstract description 122
- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 238000000465 moulding Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000007547 defect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 78
- 238000010438 heat treatment Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14647—Making flat card-like articles with an incorporated IC or chip module, e.g. IC or chip cards
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/46—Means for plasticising or homogenising the moulding material or forcing it into the mould
- B29C45/56—Means for plasticising or homogenising the moulding material or forcing it into the mould using mould parts movable during or after injection, e.g. injection-compression moulding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/54—Providing fillings in containers, e.g. gas fillings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/46—Means for plasticising or homogenising the moulding material or forcing it into the mould
- B29C45/56—Means for plasticising or homogenising the moulding material or forcing it into the mould using mould parts movable during or after injection, e.g. injection-compression moulding
- B29C2045/569—Means for plasticising or homogenising the moulding material or forcing it into the mould using mould parts movable during or after injection, e.g. injection-compression moulding using a mould part for decreasing and a mould part for increasing the volume of the mould cavity
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
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Abstract
Description
本發明係關於樹脂密封裝置及樹脂密封方法,該樹脂密封裝置及樹脂密封方法用於對通過在基板的表面以倒裝晶片的方式連接半導體晶片所做成的成型物件進行樹脂密封。The present invention relates to a resin sealing device and a resin sealing method for resin sealing a molded article made by connecting a semiconductor wafer to the surface of a substrate by flip chip.
在基板的表面以倒裝晶片的方式連接半導體晶片之後,為了保護其連接部,並且為了緩和因基板與半導體晶片之間的熱應力帶來的影響,利用液狀密封材料進行底部填充,但近年來,為了減少組裝成本和工時,一直進行的是所謂的模塑底部填充(MUF)。作為現有的基於MUF的樹脂密封裝置,公知有例如專利文獻1所述的樹脂密封裝置。圖11的(a)是專利文獻1所述的樹脂密封裝置的模塑模具的示意性仰視圖,圖11的(b)是沿圖11的(a)中的A-A的剖面視圖,圖11的(c)是表示樹脂填充完成之前和之後的狀態的沿圖11的(a)中的B-B的剖面視圖。After the semiconductor chip is connected to the surface of the substrate by flip chip, in order to protect the connection part, and to alleviate the influence of the thermal stress between the substrate and the semiconductor chip, the liquid sealing material is used for underfilling, but in recent years In order to reduce assembly costs and man-hours, so-called molded underfill (MUF) has been performed. As a conventional resin sealing device based on MUF, for example, a resin sealing device described in
如圖11所示,該樹脂密封裝置具有上模104和下模103,該上模104和下模103係夾持通過在基板102以倒裝晶片的方式連接半導體晶片106所做成的成型物件,在上模104,針對半導體晶片106的兩側面部(相對於向底部填充部填充樹脂的方向而言的兩側部)設有可動塊(圓角叉)110,該可動塊能夠突出到模腔凹部107內。As shown in FIG. 11, the resin sealing device has an
就該樹脂密封裝置而言,如圖11的(c)中的左半圖所示,通過使預先在半導體晶片106的兩側面部設置的可動塊110突出到模腔凹部107內,成為使脫模膜118壓接在基板102上的狀態,從而優先向半導體晶片106與基板102之間的間隙部分121壓送密封樹脂122,來進行底部填充模塑。
先前技術文獻
專利文獻With regard to this resin sealing device, as shown in the left half of Figure 11(c), the
專利文獻1:日本特開2002-9096號公報Patent Document 1: Japanese Patent Application Publication No. 2002-9096
發明所欲解決之課題The problem to be solved by the invention
就上述現有的樹脂密封裝置而言,可動塊110僅在半導體晶片106的兩側面部(相對於向底部填充部填充樹脂的方向而言的兩側部)進行升降,通過將該半導體晶片106的兩側面部封閉,從而能夠期待優先向半導體晶片106與基板102之間的間隙部分121壓送密封樹脂122。然而,在為近年來做得較大型的半導體晶片的情況下,當半導體晶片的兩側面部封閉時,大面積的半導體晶片與基板之間的連接電極就會成為樹脂流動的阻力,密封樹脂僅從單向流動的話,會有無法充分地流向間隙部分,發生底部填充不充分的問題。而且,若打開兩側面部而要向剩餘空間填充樹脂的話,樹脂壓力也會同時施加於已經樹脂填充的部位,填充樹脂會被向兩側面側推擠,這會對從澆口側向通氣孔側去的單向的樹脂流動形成阻力,導致流動平衡變差,在重疊的樹脂彼此的間隙處會產生空隙、氣泡等,導致整體的成型品質變差。In the above-mentioned conventional resin sealing device, the
因此,本發明的目的係提供即使是針對近年來做得較大型的半導體晶片,也能夠避免發生底部填充不充分以及空隙、氣泡等成型不良的樹脂密封裝置及樹脂密封方法。 用於解決課題的手段Therefore, the object of the present invention is to provide a resin sealing device and a resin sealing method that can avoid insufficient underfilling and poor molding such as voids and bubbles even for semiconductor wafers that have been made larger in recent years. Means to solve the problem
本發明的樹脂密封裝置利用第一模具和第二模具夾持成型物件,該成型物件是通過在基板的表面借助連接電極以倒裝晶片的方式連接半導體晶片所做成的,將密封樹脂注入到包含基板的表面與半導體晶片的連接面之間的間隙部分在內的模腔凹部,來進行樹脂密封成型,其中,該樹脂密封裝置包含:進退構件,系朝向基板的表面進退於模腔凹部內的該進退構件,且包圍半導體晶片的側面整周的至少一部;及控制部,係在使進退構件向模腔凹部內進入至半導體晶片的連接面的位置為止的狀態下,向模腔凹部注入密封樹脂,將密封樹脂填充到基板的表面與半導體晶片的連接面之間的間隙部分以及基板的表面與進退構件之間的間隙部分,之後使進退構件從模腔凹部內退回,並向半導體晶片的側面整周填充密封樹脂。The resin sealing device of the present invention clamps a molded article between a first mold and a second mold. The molded article is made by connecting a semiconductor wafer on the surface of a substrate by flip-chip connection with a connecting electrode, and injecting a sealing resin into The cavity recess including the gap portion between the surface of the substrate and the connecting surface of the semiconductor wafer is resin-sealed and molded, wherein the resin sealing device includes: an advance and retreat member that advances and retreats into the cavity recess toward the surface of the substrate The advancing and retreating member that surrounds at least a part of the entire circumference of the side surface of the semiconductor wafer; and the control section is in a state in which the advancing and retreating member enters the cavity concave portion to the position of the semiconductor wafer connection surface, and is directed to the cavity concave portion Inject the sealing resin, fill the gap between the surface of the substrate and the connection surface of the semiconductor wafer, and the gap between the surface of the substrate and the advance and retreat member, and then retreat the advance and retreat member from the cavity of the cavity to the semiconductor The side surface of the wafer is filled with sealing resin all around.
本發明的樹脂密封方法利用第一模具和第二模具夾持成型物件,該成型物件是通過在基板的表面借助連接電極以倒裝晶片的方式連接半導體晶片所做成的,將密封樹脂注入到包含基板的表面與半導體晶片的連接面之間的間隙部分在內的模腔凹部,來進行樹脂密封成型,其中,該樹脂密封方法包括:使進退構件向模腔凹部內進入至半導體晶片的連接面的位置為止,向模腔凹部注入密封樹脂,將密封樹脂填充到基板的表面與半導體晶片的連接面之間的間隙部分以及基板的表面與進退構件之間的間隙部分,其中,該進退構件係朝向基板的表面進退於模腔凹部內,該進退構件包含半導體晶片的側面整周的至少一部分;以及使進退構件從模腔凹部內退回,並向半導體晶片的側面整周填充密封樹脂。The resin sealing method of the present invention uses a first mold and a second mold to clamp a molded object. The molded object is made by connecting a semiconductor wafer on the surface of a substrate by flip-chip through a connecting electrode, and injecting a sealing resin into The cavity recess including the gap portion between the surface of the substrate and the connection surface of the semiconductor wafer is resin-sealed and molded, wherein the resin sealing method includes: the advance and retreat member enters the cavity recess to the connection of the semiconductor wafer Fill the gap between the surface of the substrate and the connection surface of the semiconductor wafer and the gap between the surface of the substrate and the advance and retreat member by injecting the sealing resin into the cavity recess, and fill the gap portion between the surface of the substrate and the advance and retreat member. It advances and retreats toward the surface of the substrate in the cavity recess, the advance and retreat member includes at least a part of the entire circumference of the side surface of the semiconductor wafer; and the advance and retreat member retreats from the cavity recess and fills the entire circumference of the semiconductor wafer with sealing resin.
依據該等發明,在使包圍半導體晶片的側面整周的至少一部分的進退構件向模腔凹部內進入至半導體晶片的連接面的位置為止的狀態下,亦即,不將半導體晶片的側面整周封閉,而是在不僅在基板的表面與半導體晶片之間存在間隙部分,也在基板的表面與進退構件之間存在間隙部分的狀態下,向模腔凹部內注入密封樹脂,所以,被注入進來的密封樹脂不僅直接被填充到基板的表面與半導體晶片之間的間隙部分,還在基板與進退構件之間的間隙部分迂迴地被填充到基板的表面與半導體晶片之間的間隙部分,密封樹脂充分地流到基板的表面與半導體晶片的連接面之間的間隙部分。According to these inventions, the advancing and retreating member surrounding at least a part of the entire circumference of the side surface of the semiconductor wafer enters the cavity recess to the position of the connection surface of the semiconductor wafer, that is, the entire circumference of the side surface of the semiconductor wafer is not Sealing, but in a state where there is not only a gap between the surface of the substrate and the semiconductor wafer, but also a gap between the surface of the substrate and the advance and retreat member, the sealing resin is injected into the cavity recess, so it is injected The sealing resin is not only directly filled in the gap between the surface of the substrate and the semiconductor wafer, but also filled in the gap between the surface of the substrate and the semiconductor wafer in a roundabout way. The sealing resin It sufficiently flows to the gap between the surface of the substrate and the connection surface of the semiconductor wafer.
又,進退構件係從基板的表面側來看,被分割成複數部分,控制部單獨控制進退構件的多個部分的進退為佳。藉此,通過單獨控制被分割成複數部分的進退構件的進退,能夠使被注入進來的密封樹脂的流動成為最佳化。 發明的效果In addition, the advancing and retreating member is divided into a plurality of parts when viewed from the surface side of the substrate, and it is preferable that the control unit individually controls the advancing and retreating of a plurality of parts of the advancing and retreating member. Thereby, by individually controlling the advance and retreat of the advance and retreat members divided into plural parts, the flow of the injected sealing resin can be optimized. Effect of invention
(1)依據本發明,被注入進來的密封樹脂在基板與進退構件之間的間隙部分迂迴地被填充到基板的表面與半導體晶片之間的間隙部分,密封樹脂充分地流到基板的表面與半導體晶片的連接面之間的間隙部分,即使是針對近年來做得較大型的半導體晶片,也能夠避免發生底部填充不充分,能夠避免發生因底部填充不充分導致的空隙,而且,樹脂從澆口側向通氣孔側單向流動,因此,樹脂流動平衡較佳,能夠實現無空隙、氣泡等的高品質成型。(1) According to the present invention, the injected sealing resin is filled in the gap between the surface of the substrate and the semiconductor wafer in a roundabout way in the gap between the substrate and the advance and retreat member, and the sealing resin sufficiently flows to the surface of the substrate and The gap between the connecting surfaces of semiconductor wafers, even for semiconductor wafers that have been made larger in recent years, can avoid insufficient underfilling, and can avoid voids caused by insufficient underfilling. Moreover, the resin is poured from The port side flows unidirectionally to the vent side, so the resin flow balance is better, and high-quality molding without voids, bubbles, etc. can be achieved.
(2)進退構件係從基板的表面側來看,被分割成複數部分,控制部單獨控制進退構件的複數部分的進退,藉此,能夠使被注入進來的密封樹脂的流動成為最佳化,能夠減少未被填充的情況,能夠減少空隙的產生、氣泡的產生,能夠實現更高品質的成型。(2) The advancing and retreating member is divided into plural parts when viewed from the surface side of the substrate, and the control unit individually controls the advancing and retreating of the plural parts of the advancing and retreating member, thereby optimizing the flow of the injected sealing resin. It is possible to reduce unfilled conditions, to reduce the generation of voids and bubbles, and to achieve higher-quality molding.
圖1是本發明的實施方式的樹脂密封裝置之模具的示意前視剖面圖,圖2是圖1中的上模的仰視圖,圖3~圖5是表示本實施方式的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。Fig. 1 is a schematic front sectional view of a mold of a resin sealing device according to an embodiment of the present invention, Fig. 2 is a bottom view of the upper mold in Fig. 1, and Figs. 3 to 5 are diagrams showing how the resin sealing device of this embodiment is performed The schematic front sectional view of the resin sealing molding project.
本發明的實施方式的樹脂密封裝置係如圖1和圖2所示,對通過在基板1的表面借助連接電極3以倒裝晶片的方式連接半導體晶片2所做成的成型物件4進行樹脂密封成型的裝置。樹脂密封裝置具有作為第一模具的上模5和作為第二模具的下模6,該上模5和下模6能夠夾持成型物件4。The resin sealing device according to the embodiment of the present invention is shown in FIGS. 1 and 2, and resin sealing is performed on a molded
在上模5形成有:收納安裝於基板1的半導體晶片2的模腔凹部7、及澆口8A和澆道8B等樹脂路徑,它們與模腔凹部7相連通。而且,在上模5的、隔著模腔凹部7在與澆口8A所在側相反的那側形成有用於排氣的通氣孔9。在模腔凹部7的底面7A具有與半導體晶片2的側面2A的外周以及樹脂密封成型品的外周相對應的貫通孔10。The
而且,上模5具有與貫通孔10相對應的進退構件11。進退構件11藉由驅動部20驅動,如圖3所示,朝向基板1的表面1A進退於模腔凹部7內。驅動部20藉由控制部21控制。進退構件11在進入到模腔凹部7內時,從基板1的表面1A側來看,呈包圍半導體晶片2的側面2整周之大略ロ字形狀來。Furthermore, the
下模6係具有載置基板1的基板載置部12、對密封樹脂13加熱,使之熔融的加熱容器14、及將密封樹脂13從加熱容器14經澆口8A和澆道8B向模腔凹部7壓送的推柱15。另外,在對30mm~40mm大小的呈方形的半導體晶片2進行樹脂密封的情況下,密封樹脂13的注入壓力為7MPa~8MPa。The
在上述樹脂密封裝置的樹脂密封方法中,如圖1所示,將借助連接電極3以倒裝晶片的方式連接有半導體晶片2的基板1(成型對象4)搬入到下模6的基板載置部12,向加熱容器14中倒入密封樹脂13之後,利用上模5和下模6,隔著脫模膜16夾持基板1。此時,模腔凹部7的底面7A對半導體晶片2的表面2B進行推壓,以防止半導體晶片2的表面2B被樹脂浸漬(參照圖3。)。In the resin sealing method of the resin sealing device described above, as shown in FIG. 1, the substrate 1 (molding object 4) to which the
接著,如圖3所示,使進退構件11向模腔凹部7內進入至半導體晶片2的連接面2C的位置為止,使進退構件11的頂端面11A與半導體晶片2的連接面2C處於同一平面。藉此,由基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分以及基板1的表面1A與進退構件11之間的間隙部分所構成之模腔凹部7的底部填充空間7B,變為厚度與連接電極3的高度(0.05mm~0.1mm)相當,大致均勻的薄板狀空間。Next, as shown in FIG. 3, the advance and
然後,如圖4所示,使推柱15上升,將密封樹脂13從加熱容器14經澆道8B和澆口8A向模腔凹部7注入,將密封樹脂13填充到由基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分以及基板1的表面1A與進退構件11之間的間隙部分所構成之模腔凹部7的底部填充空間7B,來進行底部填充成型。由於底部填充空間7B幾乎無凸凹,因此,流體阻力較小,被注入進來的密封樹脂13能順暢地流進去。Then, as shown in FIG. 4, the
在底部填充成型之後,如圖5所示,使進退構件11從模腔凹部7內退至規定位置(圖示例中,使進退構件11的頂端面11A退至模腔凹部7的底面7A)為止,並進一步注入密封樹脂13,對半導體晶片2的側面2A整周填充密封樹脂,來完成樹脂密封。上述樹脂密封裝置的動作藉由控制部21來控制。After the underfill molding, as shown in FIG. 5, the advance and
如上所述,在本實施方式的樹脂密封裝置及樹脂密封方法中,使包圍半導體晶片2的側面2A整周的進退構件11向模腔凹部7內進出於半導體晶片2的連接面2C的位置為止,在該狀態下,注入密封樹脂13。藉此,被注入進來的密封樹脂13不僅能直接被填充到基板1的表面1A與半導體晶片2之間的間隙部分,還能夠在基板1與進退構件11之間的間隙部分迂迴地被填充到基板1的表面1A與半導體晶片2之間的間隙部分,密封樹脂能夠充分地流到基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分,即使是針對近年來做得較大型的半導體晶片,也能夠避免發生底部填充不充分,而且,樹脂從澆口側向通氣孔側單向流動,因此,樹脂流動平衡較佳,能夠實現無空隙、氣泡等的高品質成型。As described above, in the resin sealing device and the resin sealing method of the present embodiment, the advancing and retreating
另外,上述實施方式中,如圖3所示,在使進退構件11向模腔凹部7內進出於半導體晶片2的連接面2C的位置為止時,使進退構件11的頂端面11A與半導體晶片2的連接面2C處於同一平面,但是,不一定處於同一平面亦可。關鍵是作為不將半導體晶片2的側面2A整周封閉,而是在不僅在基板1的表面1A與半導體晶片2之間存在間隙部分,也在基板1的表面1A與進退構件11之間存在間隙部分的狀態下,向模腔凹部7內注入密封樹脂13的構造即可。In addition, in the above embodiment, as shown in FIG. 3, when the advance and
接著,參照圖6,說明進退構件11的變形例。圖6的(a)~(c)分別是表示進退構件的變形例之上模的仰視圖。Next, referring to FIG. 6, a modification example of the advance and
圖6的(a)所示的例子中,從進退構件17的進退方向來看時的進退構件17的外周角部17A、以及該進退構件17的外周角部17A所對應的模腔凹部10的內周角部10A都為曲面。曲面的半徑R為1mm以上,更理想為2mm以上,進一步理想為3mm以上。藉此,在利用上模5和下模6隔著脫模膜16夾持基板1時,能夠防止脫模膜16的被進退構件17的外周角部17A和模腔凹部10的內周角部10A夾著的部分破損。In the example shown in FIG. 6(a), the outer
圖6的(b)所示的例子中,進退構件18係從基板1的表面1A側來看,呈包圍半導體晶片2的側面2A整周中的除了澆口8A側部分之外的部分的大略コ字形狀。即使構造中,在使進退構件18向模腔凹部7內進出於半導體晶片2的連接面2C的位置為止的狀態下注入密封樹脂13時,被注入進來的密封樹脂13也是不僅直接被填充到基板1的表面1A與半導體晶片2之間的間隙部分,還在基板1與進退構件18之間的間隙部分迂迴地被填充到基板1的表面1A與半導體晶片2之間的間隙部分,密封樹脂能夠充分地流到基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分。而且,由於在模腔凹部7的面對澆口8A的部分不存在進退構件18,因此,通過增加澆口8A的厚度,能夠增加每單位時間的密封樹脂13的注入量。In the example shown in FIG. 6(b), the advancing and retracting
圖6的(c)所示的例子中,進退構件19係從基板1的表面1A側來看,呈包圍半導體晶片2的側面2A整周中除了通氣孔9側部分之外的部分來的大略反コ字形狀。即使於該構造中,在使進退構件19向模腔凹部7內進出於半導體晶片2的連接面2C的位置為止的狀態下注入密封樹脂13時,被注入進來的密封樹脂13也是不僅直接被填充到基板1的表面1A與半導體晶片2之間的間隙部分,還在基板1與進退構件19之間的間隙部分迂迴地被填充到基板1的表面1A與半導體晶片2之間的間隙部分,密封樹脂能夠充分地流到基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分。另外,在像上述這樣的通氣孔9側開放的情況下,底部填充空間7B中,因連接電極3造成的樹脂流動阻力使各位置的填充速度不均勻時,在密封樹脂13向通氣孔9側的空間填充的期間,對填充速度較慢的位置進行填充,從而能夠解決未被填充的問題。In the example shown in FIG. 6(c), the advancing and retreating
接著,說明進退構件11的另其他變形例。圖7的(a)和(b)分別是表示進退構件的其他變形例之上模的仰視圖,圖8是圖7的(b)的例子之樹脂密封裝置的模具的示意前視剖面圖,圖9和圖10是表示圖7的(b)的例子的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。Next, another modification example of the advance and retreat
圖7的(a)和(b)所示的例子中,進退構件30、進退構件40係從基板1的表面1A側來看,被分割成複數部分。圖7的(a)所示的進退構件30係由與上述進退構件18(參照圖6的(b)。)同樣地,從基板1的表面1A側來看,呈包含半導體晶片2的側面2A整周中的除了澆口8A側部分之外的部分的大略コ字形狀的第一進退構件31,與填補該第一進退構件31的開放的部分的第二進退構件32所構成。In the example shown in (a) and (b) of FIG. 7, the advancing and retracting
另一方面,圖7的(b)所示的進退構件40係由與上述進退構件19(參照圖6的(c)。)同樣地,從基板1的表面1A側來看,呈包圍半導體晶片2的側面2A整周中除了通氣孔9側部分之外的部分來的大略反コ字形狀,與填補該第一進退構件41的開放的部分的第二進退構件42所構成。On the other hand, the advancing and retreating
以圖7的(b)所示的例子進行說明,如圖8所示,第一進退構件41和第二進退構件42分別被單獨的驅動部20A、驅動部20B驅動,從而朝向基板1的表面1A進退於模腔凹部7內。利用控制部21控制驅動部20A、驅動部20B,從而對第一進退構件41和第二進退構件42單獨地控制進退。Taking the example shown in FIG. 7(b) for explanation, as shown in FIG. 8, the first advance and retreat
該例中,與上述同樣地,將借助連接電極3以倒裝晶片的方式連接有半導體晶片2的基板1(成型對象4)放入到下模6的基板載置部12,向加熱容器14中倒入密封樹脂13之後,利用上模5和下模6,隔著脫模膜16夾持基板1,之後使第一進退構件41和第二進退構件42向模腔凹部7內進入至半導體晶片2的連接面2C的位置,使第一進退構件41的頂端面41A和第二進退構件42的頂端面42A與半導體晶片2的連接面2C處於同一平面。In this example, in the same manner as described above, the substrate 1 (molding object 4) to which the
接著,如圖9所示,使推柱15上升,將密封樹脂13從加熱容器14經澆道8B及澆口8A向模腔凹部7注入,將密封樹脂填充到由基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分以及基板1的表面1A與第一進退構件41及第二進退構件42之間的間隙部分所構成之模腔凹部7的底部填充空間7B,來進行底部填充成型。Next, as shown in FIG. 9, the
然後,在經過規定時間A之後,僅使第二進退構件42退回至規定位置為止,再經過規定時間B之後,如圖10所示,使第一進退構件41和第二進退構件42都從模腔凹部7內退至規定位置(使第一進退構件41的頂端面41A和第二進退構件42的頂端面42A退至模腔凹部7的底面7A的位置)為止,並進一步注入密封樹脂13,對半導體晶片2的側面2A整周填充密封樹脂,來完成樹脂密封。Then, after a predetermined time A has elapsed, only the second advancing and retreating
如此,進退構件40係從基板1的表面1A側來看,被分割成第一進退構件41和第二進退構件42的複數部分,利用控制部21單獨控制進退構件40的複數部分的進退,從而能夠使被注入進來的密封樹脂13的流動成為最佳化,能夠減少未被填充的情況,能夠減少空隙的產生、氣泡的產生,能夠實現更高品質的成型。In this way, the advancing and retreating
另外,控制部21所致之驅動部20A、20B的控制,也可將因應成型品的構造預先決定第一進退構件41及第二進退構件42的進退條件的表儲存至樹脂密封裝置,在樹脂密封時,使用該表來決定條件。
產業上的可利用性In addition, the control of the
本發明的樹脂密封裝置及樹脂密封方法作為針對在基板的表面以倒裝晶片的方式連接半導體晶片所做成的成型物件進行樹脂密封的裝置及方法是有效的,尤其,理想地適用於即使是針對近年來做得較大型的半導體晶片,也能夠避免發生底部填充不充分以及空隙、氣泡等成型不良的樹脂密封裝置及樹脂密封方法。The resin sealing device and the resin sealing method of the present invention are effective as a device and method for resin sealing a molded article made by flip-chip connection of semiconductor wafers on the surface of a substrate. In particular, it is ideally suited for For semiconductor wafers that have been made larger in recent years, resin sealing devices and resin sealing methods that can avoid insufficient underfilling and poor molding such as voids and bubbles.
1:基板
2:半導體晶片
3:連接電極
4:成型對象
5:上模
6:下模
7:模腔凹部
7B:底部填充空間
8A:澆口
8B:澆道
10:貫通孔
11,17,18,19:進退構件
12:基板載置部
13:密封樹脂
14:加熱容器
15:推柱
16:脫模膜
20:驅動部
21:控制部
22:表
30,31,32,40,41,42:進退構件1: substrate
2: Semiconductor wafer
3: Connect the electrodes
4: molding object
5: Upper die
6: Lower die
7:
[圖1]本發明的實施方式之樹脂密封裝置的模具的示意前視剖面圖。 [圖2]圖1中的上模的仰視圖。 [圖3]表示本實施方式的樹脂密封裝置所進行之樹脂密封成型工程的示意性正面剖視圖。 [圖4]表示本實施方式的樹脂密封裝置所進行之樹脂密封成型工程的示意性正面剖視圖。 [圖5]表示本實施方式的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。 [圖6](a)~(c)分別是表示進退構件的變形例之上模的仰視圖。 [圖7](a)和(b)分別是表示進退構件的其他變形例之上模的仰視圖。 [圖8]圖7的(b)的例子的樹脂密封裝置的模具的示意前視剖面圖。 [圖9]表示圖7的(b)的例子的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。 [圖10]表示圖7的(b)的例子的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。 [圖11]先前之樹脂密封裝置的模塑模具的示意仰視圖,圖11的(b)是沿圖11的(a)中的A-A的剖面圖,圖11的(c)是表示樹脂填充完成之前和之後的狀態的沿圖11的(a)中的B-B的剖面圖。[Fig. 1] A schematic front sectional view of a mold of a resin sealing device according to an embodiment of the present invention. [Fig. 2] A bottom view of the upper mold in Fig. 1. [Fig. 3] A schematic front cross-sectional view showing a resin sealing molding process performed by the resin sealing device of this embodiment. [Fig. 4] A schematic front cross-sectional view showing a resin sealing molding process performed by the resin sealing device of this embodiment. [Fig. 5] A schematic front cross-sectional view showing a resin sealing molding process performed by the resin sealing device of this embodiment. [Fig. 6] (a) to (c) are bottom views of the upper mold showing a modification of the advance and retreat member, respectively. [Fig. 7] (a) and (b) are bottom views of the upper mold showing other modifications of the advance and retreat member. [Fig. 8] A schematic front sectional view of a mold of the resin sealing device of the example of Fig. 7(b). [Fig. 9] A schematic front sectional view showing a resin sealing molding process performed by the resin sealing device of the example of Fig. 7(b). [Fig. 10] A schematic front sectional view showing a resin sealing molding process performed by the resin sealing device of the example of Fig. 7(b). [Fig. 11] A schematic bottom view of the molding die of the previous resin sealing device, Fig. 11(b) is a cross-sectional view along AA in Fig. 11(a), and Fig. 11(c) shows that the resin filling is completed A cross-sectional view along BB in FIG. 11(a) of the state before and after.
1:基板 1: substrate
1A:表面 1A: Surface
2:半導體晶片 2: Semiconductor wafer
2A:側面 2A: side
2B:表面 2B: Surface
3:連接電極 3: Connect the electrodes
4:成型對象 4: molding object
5:上模 5: Upper die
6:下模 6: Lower die
7B:底部填充空間 7B: Fill space at the bottom
8A:澆口 8A: Gate
8B:澆道 8B: runner
10:貫通孔 10: Through hole
11:進退構件 11: advance and retreat components
11A:頂端面 11A: Top side
12:基板載置部 12: Board placement section
13:密封樹脂 13: Sealing resin
14:加熱容器 14: Heating container
15:推柱 15: Push column
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JP5202016B2 (en) * | 2008-02-14 | 2013-06-05 | シャープ株式会社 | Resin sealing method and resin sealing device |
JP2011029471A (en) * | 2009-07-28 | 2011-02-10 | Renesas Electronics Corp | Method of manufacturing semiconductor device, and device for manufacturing semiconductor |
WO2015159743A1 (en) * | 2014-04-18 | 2015-10-22 | アピックヤマダ株式会社 | Resin molding die and resin molding method |
JP6320172B2 (en) * | 2014-05-29 | 2018-05-09 | Towa株式会社 | Resin sealing method and resin sealing device for electronic parts |
JP6749167B2 (en) * | 2016-07-21 | 2020-09-02 | アピックヤマダ株式会社 | Resin molding equipment |
-
2019
- 2019-04-09 JP JP2019074277A patent/JP6678973B1/en active Active
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2020
- 2020-01-20 TW TW109101921A patent/TWI720789B/en active
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TWI827989B (en) * | 2020-11-04 | 2024-01-01 | 日商Towa股份有限公司 | Resin molding apparatus and method for producing a resin molded product |
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TWI720789B (en) | 2021-03-01 |
JP2020174089A (en) | 2020-10-22 |
JP6678973B1 (en) | 2020-04-15 |
CN111799187A (en) | 2020-10-20 |
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