TW202038349A - Resin sealing device and resin sealing method for avoiding generation of insufficient bottom filling, voids, bubbles, and other molding defects even for larger semiconductor chips - Google Patents

Resin sealing device and resin sealing method for avoiding generation of insufficient bottom filling, voids, bubbles, and other molding defects even for larger semiconductor chips Download PDF

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TW202038349A
TW202038349A TW109101921A TW109101921A TW202038349A TW 202038349 A TW202038349 A TW 202038349A TW 109101921 A TW109101921 A TW 109101921A TW 109101921 A TW109101921 A TW 109101921A TW 202038349 A TW202038349 A TW 202038349A
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substrate
resin
semiconductor wafer
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advancing
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TWI720789B (en
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石井正明
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日商朝日科技股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14647Making flat card-like articles with an incorporated IC or chip module, e.g. IC or chip cards
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17Component parts, details or accessories; Auxiliary operations
    • B29C45/46Means for plasticising or homogenising the moulding material or forcing it into the mould
    • B29C45/56Means for plasticising or homogenising the moulding material or forcing it into the mould using mould parts movable during or after injection, e.g. injection-compression moulding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/54Providing fillings in containers, e.g. gas fillings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17Component parts, details or accessories; Auxiliary operations
    • B29C45/46Means for plasticising or homogenising the moulding material or forcing it into the mould
    • B29C45/56Means for plasticising or homogenising the moulding material or forcing it into the mould using mould parts movable during or after injection, e.g. injection-compression moulding
    • B29C2045/569Means for plasticising or homogenising the moulding material or forcing it into the mould using mould parts movable during or after injection, e.g. injection-compression moulding using a mould part for decreasing and a mould part for increasing the volume of the mould cavity

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

The present invention provides a resin sealing device and a resin sealing method, which do not cause insufficient bottom filling, voids, bubbles, and other molding defects, even for larger semiconductor chips in recent years. The resin sealing device comprises: an advancing and retreating member (11) that can advance and retreat from a cavity recess (7) toward the surface (1A) of a substrate (1), and surrounds at least a part of the entire circumference of a side surface (2A) of a semiconductor chip (2); and a control section, which injects sealing resin (13) into the cavity recess (7) in a state where the advancing and retreating member (11) enters the cavity recess (7) to reach the position of the connection surface (2C) of the semiconductor chip (2), , such that the sealing resin is filled in the gap between the surface of the substrate and the connection surface (2C) of the semiconductor chip (2) and the gap between the surface (1A) of the substrate and the advancing and retreating member (11), and then the advancing and retreating member (11) is retreated from the cavity recess (7), so as to fill up the sealing resin in the entire circumference of the side surface (2A) of the semiconductor chip (2).

Description

樹脂密封裝置及樹脂密封方法Resin sealing device and resin sealing method

本發明係關於樹脂密封裝置及樹脂密封方法,該樹脂密封裝置及樹脂密封方法用於對通過在基板的表面以倒裝晶片的方式連接半導體晶片所做成的成型物件進行樹脂密封。The present invention relates to a resin sealing device and a resin sealing method for resin sealing a molded article made by connecting a semiconductor wafer to the surface of a substrate by flip chip.

在基板的表面以倒裝晶片的方式連接半導體晶片之後,為了保護其連接部,並且為了緩和因基板與半導體晶片之間的熱應力帶來的影響,利用液狀密封材料進行底部填充,但近年來,為了減少組裝成本和工時,一直進行的是所謂的模塑底部填充(MUF)。作為現有的基於MUF的樹脂密封裝置,公知有例如專利文獻1所述的樹脂密封裝置。圖11的(a)是專利文獻1所述的樹脂密封裝置的模塑模具的示意性仰視圖,圖11的(b)是沿圖11的(a)中的A-A的剖面視圖,圖11的(c)是表示樹脂填充完成之前和之後的狀態的沿圖11的(a)中的B-B的剖面視圖。After the semiconductor chip is connected to the surface of the substrate by flip chip, in order to protect the connection part, and to alleviate the influence of the thermal stress between the substrate and the semiconductor chip, the liquid sealing material is used for underfilling, but in recent years In order to reduce assembly costs and man-hours, so-called molded underfill (MUF) has been performed. As a conventional resin sealing device based on MUF, for example, a resin sealing device described in Patent Document 1 is known. Fig. 11(a) is a schematic bottom view of the molding die of the resin sealing device described in Patent Document 1, Fig. 11(b) is a cross-sectional view along AA in Fig. 11(a), and Fig. 11 (c) is a cross-sectional view along BB in FIG. 11(a) showing a state before and after completion of resin filling.

如圖11所示,該樹脂密封裝置具有上模104和下模103,該上模104和下模103係夾持通過在基板102以倒裝晶片的方式連接半導體晶片106所做成的成型物件,在上模104,針對半導體晶片106的兩側面部(相對於向底部填充部填充樹脂的方向而言的兩側部)設有可動塊(圓角叉)110,該可動塊能夠突出到模腔凹部107內。As shown in FIG. 11, the resin sealing device has an upper mold 104 and a lower mold 103. The upper mold 104 and the lower mold 103 clamp a molded object made by connecting a semiconductor wafer 106 to a substrate 102 by flip chip. In the upper mold 104, movable blocks (round forks) 110 are provided on both sides of the semiconductor wafer 106 (both sides with respect to the direction in which the resin is filled in the underfill), and the movable blocks can protrude into the mold Cavities 107.

就該樹脂密封裝置而言,如圖11的(c)中的左半圖所示,通過使預先在半導體晶片106的兩側面部設置的可動塊110突出到模腔凹部107內,成為使脫模膜118壓接在基板102上的狀態,從而優先向半導體晶片106與基板102之間的間隙部分121壓送密封樹脂122,來進行底部填充模塑。 先前技術文獻 專利文獻With regard to this resin sealing device, as shown in the left half of Figure 11(c), the movable blocks 110 previously provided on both sides of the semiconductor wafer 106 are protruded into the cavity recess 107, thereby making the The mold film 118 is pressed against the substrate 102, so that the sealing resin 122 is preferentially sent to the gap 121 between the semiconductor wafer 106 and the substrate 102 to perform underfill molding. Prior art literature Patent literature

專利文獻1:日本特開2002-9096號公報Patent Document 1: Japanese Patent Application Publication No. 2002-9096

發明所欲解決之課題The problem to be solved by the invention

就上述現有的樹脂密封裝置而言,可動塊110僅在半導體晶片106的兩側面部(相對於向底部填充部填充樹脂的方向而言的兩側部)進行升降,通過將該半導體晶片106的兩側面部封閉,從而能夠期待優先向半導體晶片106與基板102之間的間隙部分121壓送密封樹脂122。然而,在為近年來做得較大型的半導體晶片的情況下,當半導體晶片的兩側面部封閉時,大面積的半導體晶片與基板之間的連接電極就會成為樹脂流動的阻力,密封樹脂僅從單向流動的話,會有無法充分地流向間隙部分,發生底部填充不充分的問題。而且,若打開兩側面部而要向剩餘空間填充樹脂的話,樹脂壓力也會同時施加於已經樹脂填充的部位,填充樹脂會被向兩側面側推擠,這會對從澆口側向通氣孔側去的單向的樹脂流動形成阻力,導致流動平衡變差,在重疊的樹脂彼此的間隙處會產生空隙、氣泡等,導致整體的成型品質變差。In the above-mentioned conventional resin sealing device, the movable block 110 is only raised and lowered on both side surfaces of the semiconductor wafer 106 (both sides with respect to the direction of filling the underfill portion with resin), and the semiconductor wafer 106 Since both side surfaces are closed, it can be expected that the sealing resin 122 is preferentially fed to the gap 121 between the semiconductor wafer 106 and the substrate 102. However, in the case of large-sized semiconductor wafers that have been made in recent years, when the sides of the semiconductor wafer are closed, the connecting electrodes between the large-area semiconductor wafer and the substrate will become resistance to resin flow, and the sealing resin will only If the flow is in one direction, it will not flow sufficiently to the gap part, resulting in insufficient underfill. Moreover, if the both sides are opened to fill the remaining space with resin, the resin pressure will also be applied to the part that has been filled with resin at the same time, and the filled resin will be pushed to both sides, which will affect the flow from the gate side to the vent side. The unidirectional resin flow that goes out creates resistance, which leads to poor flow balance, voids, air bubbles, etc. are generated in the gap between the overlapping resins, resulting in poor overall molding quality.

因此,本發明的目的係提供即使是針對近年來做得較大型的半導體晶片,也能夠避免發生底部填充不充分以及空隙、氣泡等成型不良的樹脂密封裝置及樹脂密封方法。 用於解決課題的手段Therefore, the object of the present invention is to provide a resin sealing device and a resin sealing method that can avoid insufficient underfilling and poor molding such as voids and bubbles even for semiconductor wafers that have been made larger in recent years. Means to solve the problem

本發明的樹脂密封裝置利用第一模具和第二模具夾持成型物件,該成型物件是通過在基板的表面借助連接電極以倒裝晶片的方式連接半導體晶片所做成的,將密封樹脂注入到包含基板的表面與半導體晶片的連接面之間的間隙部分在內的模腔凹部,來進行樹脂密封成型,其中,該樹脂密封裝置包含:進退構件,系朝向基板的表面進退於模腔凹部內的該進退構件,且包圍半導體晶片的側面整周的至少一部;及控制部,係在使進退構件向模腔凹部內進入至半導體晶片的連接面的位置為止的狀態下,向模腔凹部注入密封樹脂,將密封樹脂填充到基板的表面與半導體晶片的連接面之間的間隙部分以及基板的表面與進退構件之間的間隙部分,之後使進退構件從模腔凹部內退回,並向半導體晶片的側面整周填充密封樹脂。The resin sealing device of the present invention clamps a molded article between a first mold and a second mold. The molded article is made by connecting a semiconductor wafer on the surface of a substrate by flip-chip connection with a connecting electrode, and injecting a sealing resin into The cavity recess including the gap portion between the surface of the substrate and the connecting surface of the semiconductor wafer is resin-sealed and molded, wherein the resin sealing device includes: an advance and retreat member that advances and retreats into the cavity recess toward the surface of the substrate The advancing and retreating member that surrounds at least a part of the entire circumference of the side surface of the semiconductor wafer; and the control section is in a state in which the advancing and retreating member enters the cavity concave portion to the position of the semiconductor wafer connection surface, and is directed to the cavity concave portion Inject the sealing resin, fill the gap between the surface of the substrate and the connection surface of the semiconductor wafer, and the gap between the surface of the substrate and the advance and retreat member, and then retreat the advance and retreat member from the cavity of the cavity to the semiconductor The side surface of the wafer is filled with sealing resin all around.

本發明的樹脂密封方法利用第一模具和第二模具夾持成型物件,該成型物件是通過在基板的表面借助連接電極以倒裝晶片的方式連接半導體晶片所做成的,將密封樹脂注入到包含基板的表面與半導體晶片的連接面之間的間隙部分在內的模腔凹部,來進行樹脂密封成型,其中,該樹脂密封方法包括:使進退構件向模腔凹部內進入至半導體晶片的連接面的位置為止,向模腔凹部注入密封樹脂,將密封樹脂填充到基板的表面與半導體晶片的連接面之間的間隙部分以及基板的表面與進退構件之間的間隙部分,其中,該進退構件係朝向基板的表面進退於模腔凹部內,該進退構件包含半導體晶片的側面整周的至少一部分;以及使進退構件從模腔凹部內退回,並向半導體晶片的側面整周填充密封樹脂。The resin sealing method of the present invention uses a first mold and a second mold to clamp a molded object. The molded object is made by connecting a semiconductor wafer on the surface of a substrate by flip-chip through a connecting electrode, and injecting a sealing resin into The cavity recess including the gap portion between the surface of the substrate and the connection surface of the semiconductor wafer is resin-sealed and molded, wherein the resin sealing method includes: the advance and retreat member enters the cavity recess to the connection of the semiconductor wafer Fill the gap between the surface of the substrate and the connection surface of the semiconductor wafer and the gap between the surface of the substrate and the advance and retreat member by injecting the sealing resin into the cavity recess, and fill the gap portion between the surface of the substrate and the advance and retreat member. It advances and retreats toward the surface of the substrate in the cavity recess, the advance and retreat member includes at least a part of the entire circumference of the side surface of the semiconductor wafer; and the advance and retreat member retreats from the cavity recess and fills the entire circumference of the semiconductor wafer with sealing resin.

依據該等發明,在使包圍半導體晶片的側面整周的至少一部分的進退構件向模腔凹部內進入至半導體晶片的連接面的位置為止的狀態下,亦即,不將半導體晶片的側面整周封閉,而是在不僅在基板的表面與半導體晶片之間存在間隙部分,也在基板的表面與進退構件之間存在間隙部分的狀態下,向模腔凹部內注入密封樹脂,所以,被注入進來的密封樹脂不僅直接被填充到基板的表面與半導體晶片之間的間隙部分,還在基板與進退構件之間的間隙部分迂迴地被填充到基板的表面與半導體晶片之間的間隙部分,密封樹脂充分地流到基板的表面與半導體晶片的連接面之間的間隙部分。According to these inventions, the advancing and retreating member surrounding at least a part of the entire circumference of the side surface of the semiconductor wafer enters the cavity recess to the position of the connection surface of the semiconductor wafer, that is, the entire circumference of the side surface of the semiconductor wafer is not Sealing, but in a state where there is not only a gap between the surface of the substrate and the semiconductor wafer, but also a gap between the surface of the substrate and the advance and retreat member, the sealing resin is injected into the cavity recess, so it is injected The sealing resin is not only directly filled in the gap between the surface of the substrate and the semiconductor wafer, but also filled in the gap between the surface of the substrate and the semiconductor wafer in a roundabout way. The sealing resin It sufficiently flows to the gap between the surface of the substrate and the connection surface of the semiconductor wafer.

又,進退構件係從基板的表面側來看,被分割成複數部分,控制部單獨控制進退構件的多個部分的進退為佳。藉此,通過單獨控制被分割成複數部分的進退構件的進退,能夠使被注入進來的密封樹脂的流動成為最佳化。 發明的效果In addition, the advancing and retreating member is divided into a plurality of parts when viewed from the surface side of the substrate, and it is preferable that the control unit individually controls the advancing and retreating of a plurality of parts of the advancing and retreating member. Thereby, by individually controlling the advance and retreat of the advance and retreat members divided into plural parts, the flow of the injected sealing resin can be optimized. Effect of invention

(1)依據本發明,被注入進來的密封樹脂在基板與進退構件之間的間隙部分迂迴地被填充到基板的表面與半導體晶片之間的間隙部分,密封樹脂充分地流到基板的表面與半導體晶片的連接面之間的間隙部分,即使是針對近年來做得較大型的半導體晶片,也能夠避免發生底部填充不充分,能夠避免發生因底部填充不充分導致的空隙,而且,樹脂從澆口側向通氣孔側單向流動,因此,樹脂流動平衡較佳,能夠實現無空隙、氣泡等的高品質成型。(1) According to the present invention, the injected sealing resin is filled in the gap between the surface of the substrate and the semiconductor wafer in a roundabout way in the gap between the substrate and the advance and retreat member, and the sealing resin sufficiently flows to the surface of the substrate and The gap between the connecting surfaces of semiconductor wafers, even for semiconductor wafers that have been made larger in recent years, can avoid insufficient underfilling, and can avoid voids caused by insufficient underfilling. Moreover, the resin is poured from The port side flows unidirectionally to the vent side, so the resin flow balance is better, and high-quality molding without voids, bubbles, etc. can be achieved.

(2)進退構件係從基板的表面側來看,被分割成複數部分,控制部單獨控制進退構件的複數部分的進退,藉此,能夠使被注入進來的密封樹脂的流動成為最佳化,能夠減少未被填充的情況,能夠減少空隙的產生、氣泡的產生,能夠實現更高品質的成型。(2) The advancing and retreating member is divided into plural parts when viewed from the surface side of the substrate, and the control unit individually controls the advancing and retreating of the plural parts of the advancing and retreating member, thereby optimizing the flow of the injected sealing resin. It is possible to reduce unfilled conditions, to reduce the generation of voids and bubbles, and to achieve higher-quality molding.

圖1是本發明的實施方式的樹脂密封裝置之模具的示意前視剖面圖,圖2是圖1中的上模的仰視圖,圖3~圖5是表示本實施方式的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。Fig. 1 is a schematic front sectional view of a mold of a resin sealing device according to an embodiment of the present invention, Fig. 2 is a bottom view of the upper mold in Fig. 1, and Figs. 3 to 5 are diagrams showing how the resin sealing device of this embodiment is performed The schematic front sectional view of the resin sealing molding project.

本發明的實施方式的樹脂密封裝置係如圖1和圖2所示,對通過在基板1的表面借助連接電極3以倒裝晶片的方式連接半導體晶片2所做成的成型物件4進行樹脂密封成型的裝置。樹脂密封裝置具有作為第一模具的上模5和作為第二模具的下模6,該上模5和下模6能夠夾持成型物件4。The resin sealing device according to the embodiment of the present invention is shown in FIGS. 1 and 2, and resin sealing is performed on a molded article 4 made by connecting a semiconductor wafer 2 on the surface of a substrate 1 via a connecting electrode 3 in a flip chip manner. Molded device. The resin sealing device has an upper mold 5 as a first mold and a lower mold 6 as a second mold, and the upper mold 5 and the lower mold 6 can clamp the molded article 4.

在上模5形成有:收納安裝於基板1的半導體晶片2的模腔凹部7、及澆口8A和澆道8B等樹脂路徑,它們與模腔凹部7相連通。而且,在上模5的、隔著模腔凹部7在與澆口8A所在側相反的那側形成有用於排氣的通氣孔9。在模腔凹部7的底面7A具有與半導體晶片2的側面2A的外周以及樹脂密封成型品的外周相對應的貫通孔10。The upper mold 5 is formed with a cavity recess 7 that accommodates the semiconductor wafer 2 mounted on the substrate 1, and resin paths such as gate 8A and runner 8B, which communicate with the cavity recess 7. Furthermore, the upper mold 5 has a vent hole 9 for exhaust gas formed on the side opposite to the side where the gate 8A is located via the cavity recess 7. The bottom surface 7A of the cavity recess 7 has a through hole 10 corresponding to the outer circumference of the side surface 2A of the semiconductor wafer 2 and the outer circumference of the resin-sealed molded product.

而且,上模5具有與貫通孔10相對應的進退構件11。進退構件11藉由驅動部20驅動,如圖3所示,朝向基板1的表面1A進退於模腔凹部7內。驅動部20藉由控制部21控制。進退構件11在進入到模腔凹部7內時,從基板1的表面1A側來看,呈包圍半導體晶片2的側面2整周之大略ロ字形狀來。Furthermore, the upper mold 5 has an advance and retreat member 11 corresponding to the through hole 10. The advancing and retreating member 11 is driven by the driving part 20 and, as shown in FIG. 3, advances and retreats into the cavity recess 7 toward the surface 1A of the substrate 1. The drive unit 20 is controlled by the control unit 21. When the advancing and retracting member 11 enters the cavity recess 7, when viewed from the surface 1A side of the substrate 1, it has a substantially square shape surrounding the entire circumference of the side surface 2 of the semiconductor wafer 2.

下模6係具有載置基板1的基板載置部12、對密封樹脂13加熱,使之熔融的加熱容器14、及將密封樹脂13從加熱容器14經澆口8A和澆道8B向模腔凹部7壓送的推柱15。另外,在對30mm~40mm大小的呈方形的半導體晶片2進行樹脂密封的情況下,密封樹脂13的注入壓力為7MPa~8MPa。The lower mold 6 has a substrate placing portion 12 on which the substrate 1 is placed, a heating vessel 14 for heating and melting the sealing resin 13, and the sealing resin 13 from the heating vessel 14 to the cavity through the gate 8A and runner 8B The recess 7 presses the push post 15. In addition, when resin sealing is performed on the square semiconductor wafer 2 having a size of 30 mm to 40 mm, the injection pressure of the sealing resin 13 is 7 MPa to 8 MPa.

在上述樹脂密封裝置的樹脂密封方法中,如圖1所示,將借助連接電極3以倒裝晶片的方式連接有半導體晶片2的基板1(成型對象4)搬入到下模6的基板載置部12,向加熱容器14中倒入密封樹脂13之後,利用上模5和下模6,隔著脫模膜16夾持基板1。此時,模腔凹部7的底面7A對半導體晶片2的表面2B進行推壓,以防止半導體晶片2的表面2B被樹脂浸漬(參照圖3。)。In the resin sealing method of the resin sealing device described above, as shown in FIG. 1, the substrate 1 (molding object 4) to which the semiconductor wafer 2 is connected by flip-chip via the connecting electrode 3 is carried into the substrate mounting of the lower mold 6. In the section 12, after pouring the sealing resin 13 into the heating vessel 14, the upper mold 5 and the lower mold 6 sandwich the substrate 1 with the release film 16 therebetween. At this time, the bottom surface 7A of the cavity recess 7 presses the surface 2B of the semiconductor wafer 2 to prevent the surface 2B of the semiconductor wafer 2 from being impregnated with resin (refer to FIG. 3).

接著,如圖3所示,使進退構件11向模腔凹部7內進入至半導體晶片2的連接面2C的位置為止,使進退構件11的頂端面11A與半導體晶片2的連接面2C處於同一平面。藉此,由基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分以及基板1的表面1A與進退構件11之間的間隙部分所構成之模腔凹部7的底部填充空間7B,變為厚度與連接電極3的高度(0.05mm~0.1mm)相當,大致均勻的薄板狀空間。Next, as shown in FIG. 3, the advance and retreat member 11 is entered into the cavity recess 7 to the position of the connection surface 2C of the semiconductor wafer 2, and the tip surface 11A of the advance and retreat member 11 and the connection surface 2C of the semiconductor wafer 2 are in the same plane . Thereby, the underfill space 7B of the cavity recess 7 constituted by the gap portion between the surface 1A of the substrate 1 and the connection surface 2C of the semiconductor wafer 2 and the gap portion between the surface 1A of the substrate 1 and the advance and retreat member 11, The thickness is equivalent to the height of the connection electrode 3 (0.05 mm to 0.1 mm), and it becomes a substantially uniform thin plate-like space.

然後,如圖4所示,使推柱15上升,將密封樹脂13從加熱容器14經澆道8B和澆口8A向模腔凹部7注入,將密封樹脂13填充到由基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分以及基板1的表面1A與進退構件11之間的間隙部分所構成之模腔凹部7的底部填充空間7B,來進行底部填充成型。由於底部填充空間7B幾乎無凸凹,因此,流體阻力較小,被注入進來的密封樹脂13能順暢地流進去。Then, as shown in FIG. 4, the pusher 15 is raised, the sealing resin 13 is injected from the heating container 14 through the runner 8B and the gate 8A into the cavity recess 7, and the sealing resin 13 is filled on the surface 1A of the substrate 1 and The underfill space 7B of the cavity recess 7 formed by the gap portion between the connection surfaces 2C of the semiconductor wafer 2 and the gap portion between the surface 1A of the substrate 1 and the advance and retreat member 11 is used for underfill molding. Since the underfill space 7B has almost no projections and depressions, the fluid resistance is small, and the injected sealing resin 13 can flow in smoothly.

在底部填充成型之後,如圖5所示,使進退構件11從模腔凹部7內退至規定位置(圖示例中,使進退構件11的頂端面11A退至模腔凹部7的底面7A)為止,並進一步注入密封樹脂13,對半導體晶片2的側面2A整周填充密封樹脂,來完成樹脂密封。上述樹脂密封裝置的動作藉由控制部21來控制。After the underfill molding, as shown in FIG. 5, the advance and retract member 11 is retracted from the cavity recess 7 to a predetermined position (in the example shown, the front end surface 11A of the advance and retract member 11 is retracted to the bottom surface 7A of the cavity recess 7) , And further inject the sealing resin 13 to fill the entire circumference of the side surface 2A of the semiconductor wafer 2 with the sealing resin to complete the resin sealing. The operation of the resin sealing device described above is controlled by the control unit 21.

如上所述,在本實施方式的樹脂密封裝置及樹脂密封方法中,使包圍半導體晶片2的側面2A整周的進退構件11向模腔凹部7內進出於半導體晶片2的連接面2C的位置為止,在該狀態下,注入密封樹脂13。藉此,被注入進來的密封樹脂13不僅能直接被填充到基板1的表面1A與半導體晶片2之間的間隙部分,還能夠在基板1與進退構件11之間的間隙部分迂迴地被填充到基板1的表面1A與半導體晶片2之間的間隙部分,密封樹脂能夠充分地流到基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分,即使是針對近年來做得較大型的半導體晶片,也能夠避免發生底部填充不充分,而且,樹脂從澆口側向通氣孔側單向流動,因此,樹脂流動平衡較佳,能夠實現無空隙、氣泡等的高品質成型。As described above, in the resin sealing device and the resin sealing method of the present embodiment, the advancing and retreating member 11 surrounding the entire circumference of the side surface 2A of the semiconductor wafer 2 is advanced into the cavity recess 7 and out of the position of the connection surface 2C of the semiconductor wafer 2 In this state, the sealing resin 13 is injected. Thereby, the injected sealing resin 13 can not only be directly filled in the gap between the surface 1A of the substrate 1 and the semiconductor wafer 2, but also can be filled in the gap between the substrate 1 and the advance and retreat member 11 in a roundabout manner. In the gap between the surface 1A of the substrate 1 and the semiconductor wafer 2, the sealing resin can sufficiently flow to the gap between the surface 1A of the substrate 1 and the connection surface 2C of the semiconductor wafer 2, even if it is made larger in recent years For semiconductor wafers, insufficient underfilling can also be avoided, and the resin flows unidirectionally from the gate side to the vent side. Therefore, the resin flow is balanced and high-quality molding without voids, bubbles, etc. can be achieved.

另外,上述實施方式中,如圖3所示,在使進退構件11向模腔凹部7內進出於半導體晶片2的連接面2C的位置為止時,使進退構件11的頂端面11A與半導體晶片2的連接面2C處於同一平面,但是,不一定處於同一平面亦可。關鍵是作為不將半導體晶片2的側面2A整周封閉,而是在不僅在基板1的表面1A與半導體晶片2之間存在間隙部分,也在基板1的表面1A與進退構件11之間存在間隙部分的狀態下,向模腔凹部7內注入密封樹脂13的構造即可。In addition, in the above embodiment, as shown in FIG. 3, when the advance and retreat member 11 is advanced into and out of the position of the connection surface 2C of the semiconductor wafer 2 into the cavity recess 7, the front end surface 11A of the advance and retreat member 11 is connected to the semiconductor wafer 2 The connecting surfaces 2C are on the same plane, but they are not necessarily on the same plane. The key is not to close the side surface 2A of the semiconductor wafer 2 all around, but to have a gap not only between the surface 1A of the substrate 1 and the semiconductor wafer 2, but also between the surface 1A of the substrate 1 and the advance and retreat member 11. In the partial state, a structure in which the sealing resin 13 is injected into the cavity recess 7 is sufficient.

接著,參照圖6,說明進退構件11的變形例。圖6的(a)~(c)分別是表示進退構件的變形例之上模的仰視圖。Next, referring to FIG. 6, a modification example of the advance and retreat member 11 will be described. (A) to (c) of Fig. 6 are bottom views of the upper mold showing a modification of the advance and retreat member, respectively.

圖6的(a)所示的例子中,從進退構件17的進退方向來看時的進退構件17的外周角部17A、以及該進退構件17的外周角部17A所對應的模腔凹部10的內周角部10A都為曲面。曲面的半徑R為1mm以上,更理想為2mm以上,進一步理想為3mm以上。藉此,在利用上模5和下模6隔著脫模膜16夾持基板1時,能夠防止脫模膜16的被進退構件17的外周角部17A和模腔凹部10的內周角部10A夾著的部分破損。In the example shown in FIG. 6(a), the outer peripheral corner 17A of the advancing and retreating member 17 viewed from the advancing and retreating direction of the advancing and retreating member 17 and the cavity recessed portion 10 corresponding to the outer peripheral corner 17A of the advancing and retreating member 17 All the inner peripheral corners 10A are curved surfaces. The radius R of the curved surface is 1 mm or more, more desirably 2 mm or more, and still more desirably 3 mm or more. Thereby, when the substrate 1 is clamped by the upper mold 5 and the lower mold 6 with the release film 16 therebetween, the outer peripheral corner portion 17A of the member 17 and the inner peripheral corner portion of the cavity recess 10 of the mold release film 16 can be prevented The part sandwiched by 10A is damaged.

圖6的(b)所示的例子中,進退構件18係從基板1的表面1A側來看,呈包圍半導體晶片2的側面2A整周中的除了澆口8A側部分之外的部分的大略コ字形狀。即使構造中,在使進退構件18向模腔凹部7內進出於半導體晶片2的連接面2C的位置為止的狀態下注入密封樹脂13時,被注入進來的密封樹脂13也是不僅直接被填充到基板1的表面1A與半導體晶片2之間的間隙部分,還在基板1與進退構件18之間的間隙部分迂迴地被填充到基板1的表面1A與半導體晶片2之間的間隙部分,密封樹脂能夠充分地流到基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分。而且,由於在模腔凹部7的面對澆口8A的部分不存在進退構件18,因此,通過增加澆口8A的厚度,能夠增加每單位時間的密封樹脂13的注入量。In the example shown in FIG. 6(b), the advancing and retracting member 18 is viewed from the surface 1A side of the substrate 1 and is roughly enclosing the side surface 2A of the semiconductor wafer 2 except for the gate 8A side portion.コ shape. Even in the structure, when the sealing resin 13 is injected in a state where the advancing and retracting member 18 enters and exits the position of the connection surface 2C of the semiconductor wafer 2 into the cavity recess 7, the injected sealing resin 13 is not only directly filled into the substrate The gap between the surface 1A of 1 and the semiconductor wafer 2 is also filled in the gap between the surface 1A of the substrate 1 and the semiconductor wafer 2 in a circuitous manner in the gap between the substrate 1 and the advancing and retracting member 18. The sealing resin can It sufficiently flows to the gap portion between the surface 1A of the substrate 1 and the connection surface 2C of the semiconductor wafer 2. Furthermore, since the advancing and retreating member 18 does not exist in the portion of the cavity recess 7 facing the gate 8A, by increasing the thickness of the gate 8A, the injection amount of the sealing resin 13 per unit time can be increased.

圖6的(c)所示的例子中,進退構件19係從基板1的表面1A側來看,呈包圍半導體晶片2的側面2A整周中除了通氣孔9側部分之外的部分來的大略反コ字形狀。即使於該構造中,在使進退構件19向模腔凹部7內進出於半導體晶片2的連接面2C的位置為止的狀態下注入密封樹脂13時,被注入進來的密封樹脂13也是不僅直接被填充到基板1的表面1A與半導體晶片2之間的間隙部分,還在基板1與進退構件19之間的間隙部分迂迴地被填充到基板1的表面1A與半導體晶片2之間的間隙部分,密封樹脂能夠充分地流到基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分。另外,在像上述這樣的通氣孔9側開放的情況下,底部填充空間7B中,因連接電極3造成的樹脂流動阻力使各位置的填充速度不均勻時,在密封樹脂13向通氣孔9側的空間填充的期間,對填充速度較慢的位置進行填充,從而能夠解決未被填充的問題。In the example shown in FIG. 6(c), the advancing and retreating member 19 is viewed from the surface 1A side of the substrate 1 and is roughly formed by a portion surrounding the side surface 2A of the semiconductor wafer 2 except for the portion on the side of the vent 9 Reverse コ shape. Even in this structure, when the sealing resin 13 is injected in a state where the advancing and retracting member 19 enters and exits the position of the connection surface 2C of the semiconductor wafer 2 into the cavity recess 7, the injected sealing resin 13 is not only directly filled The gap between the surface 1A of the substrate 1 and the semiconductor wafer 2 is also filled in the gap between the substrate 1 and the advancing and retracting member 19 in a roundabout manner to seal the gap between the surface 1A of the substrate 1 and the semiconductor wafer 2 The resin can sufficiently flow to the gap portion between the surface 1A of the substrate 1 and the connection surface 2C of the semiconductor wafer 2. In addition, in the case where the vent hole 9 side is open as described above, when the resin flow resistance caused by the connection electrode 3 in the underfill space 7B makes the filling speed of each position uneven, the sealing resin 13 faces the vent hole 9 side During the space filling period, fill the position with a slower filling speed, so as to solve the problem of not being filled.

接著,說明進退構件11的另其他變形例。圖7的(a)和(b)分別是表示進退構件的其他變形例之上模的仰視圖,圖8是圖7的(b)的例子之樹脂密封裝置的模具的示意前視剖面圖,圖9和圖10是表示圖7的(b)的例子的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。Next, another modification example of the advance and retreat member 11 will be described. 7(a) and (b) are bottom views of the upper mold of another modification of the advance and retreat member, and FIG. 8 is a schematic front sectional view of the mold of the resin sealing device in the example of FIG. 7(b), 9 and 10 are schematic front cross-sectional views showing the resin sealing molding process performed by the resin sealing device of the example of FIG. 7(b).

圖7的(a)和(b)所示的例子中,進退構件30、進退構件40係從基板1的表面1A側來看,被分割成複數部分。圖7的(a)所示的進退構件30係由與上述進退構件18(參照圖6的(b)。)同樣地,從基板1的表面1A側來看,呈包含半導體晶片2的側面2A整周中的除了澆口8A側部分之外的部分的大略コ字形狀的第一進退構件31,與填補該第一進退構件31的開放的部分的第二進退構件32所構成。In the example shown in (a) and (b) of FIG. 7, the advancing and retracting member 30 and the advancing and retracting member 40 are divided into plural parts when viewed from the surface 1A side of the substrate 1. The advancing and retreating member 30 shown in FIG. 7(a) is formed of the side surface 2A including the semiconductor wafer 2 when viewed from the surface 1A side of the substrate 1 in the same way as the foregoing advancing and retreating member 18 (see FIG. 6(b).) The roughly U-shaped first advancing and retreating member 31 in the entire circumference except for the gate 8A side portion, and the second advancing and retreating member 32 that fills the open portion of the first advancing and retreating member 31 are constituted.

另一方面,圖7的(b)所示的進退構件40係由與上述進退構件19(參照圖6的(c)。)同樣地,從基板1的表面1A側來看,呈包圍半導體晶片2的側面2A整周中除了通氣孔9側部分之外的部分來的大略反コ字形狀,與填補該第一進退構件41的開放的部分的第二進退構件42所構成。On the other hand, the advancing and retreating member 40 shown in FIG. 7(b) is composed of the same as the foregoing advancing and retreating member 19 (see FIG. 6(c).), when viewed from the surface 1A side of the substrate 1, it surrounds the semiconductor wafer The side surface 2A of 2 has a roughly reversed U-shape from the part excluding the part on the side of the vent hole 9 and the second advance and retreat member 42 that fills the open portion of the first advance and retreat member 41.

以圖7的(b)所示的例子進行說明,如圖8所示,第一進退構件41和第二進退構件42分別被單獨的驅動部20A、驅動部20B驅動,從而朝向基板1的表面1A進退於模腔凹部7內。利用控制部21控制驅動部20A、驅動部20B,從而對第一進退構件41和第二進退構件42單獨地控制進退。Taking the example shown in FIG. 7(b) for explanation, as shown in FIG. 8, the first advance and retreat member 41 and the second advance and retreat member 42 are driven by separate driving portions 20A and 20B, respectively, so as to face the surface of the substrate 1. 1A advances and retreats in the cavity recess 7. The driving part 20A and the driving part 20B are controlled by the control part 21, so that the first advancing and retreating member 41 and the second advancing and retreating member 42 are individually controlled to advance and retreat.

該例中,與上述同樣地,將借助連接電極3以倒裝晶片的方式連接有半導體晶片2的基板1(成型對象4)放入到下模6的基板載置部12,向加熱容器14中倒入密封樹脂13之後,利用上模5和下模6,隔著脫模膜16夾持基板1,之後使第一進退構件41和第二進退構件42向模腔凹部7內進入至半導體晶片2的連接面2C的位置,使第一進退構件41的頂端面41A和第二進退構件42的頂端面42A與半導體晶片2的連接面2C處於同一平面。In this example, in the same manner as described above, the substrate 1 (molding object 4) to which the semiconductor wafer 2 is flip-chip connected via the connection electrode 3 is placed in the substrate mounting portion 12 of the lower mold 6 and placed in the heating container 14 After pouring the sealing resin 13 into the upper mold 5 and the lower mold 6, the substrate 1 is clamped with the release film 16 therebetween, and then the first advance and retreat member 41 and the second advance and retreat member 42 are moved into the cavity recess 7 into the semiconductor The connection surface 2C of the wafer 2 is positioned such that the tip surface 41A of the first advancing and retracting member 41 and the tip surface 42A of the second advancing and retracting member 42 are in the same plane as the connecting surface 2C of the semiconductor wafer 2.

接著,如圖9所示,使推柱15上升,將密封樹脂13從加熱容器14經澆道8B及澆口8A向模腔凹部7注入,將密封樹脂填充到由基板1的表面1A與半導體晶片2的連接面2C之間的間隙部分以及基板1的表面1A與第一進退構件41及第二進退構件42之間的間隙部分所構成之模腔凹部7的底部填充空間7B,來進行底部填充成型。Next, as shown in FIG. 9, the pusher 15 is raised, and the sealing resin 13 is injected from the heating container 14 through the runner 8B and the gate 8A into the cavity recess 7, and the sealing resin is filled on the surface 1A of the substrate 1 and the semiconductor The gap portion between the connection surface 2C of the wafer 2 and the gap portion between the surface 1A of the substrate 1 and the first advance and retreat member 41 and the second advance and retreat member 42 constitute the underfill space 7B of the cavity recess 7 to perform the bottom Filling and molding.

然後,在經過規定時間A之後,僅使第二進退構件42退回至規定位置為止,再經過規定時間B之後,如圖10所示,使第一進退構件41和第二進退構件42都從模腔凹部7內退至規定位置(使第一進退構件41的頂端面41A和第二進退構件42的頂端面42A退至模腔凹部7的底面7A的位置)為止,並進一步注入密封樹脂13,對半導體晶片2的側面2A整周填充密封樹脂,來完成樹脂密封。Then, after a predetermined time A has elapsed, only the second advancing and retreating member 42 is retracted to a predetermined position, and after a predetermined time B has elapsed, as shown in FIG. 10, both the first advancing and retreating member 41 and the second advancing and retreating member 42 are removed from the mold. The cavity recess 7 is retracted to a predetermined position (the front end surface 41A of the first advancing and retreating member 41 and the end surface 42A of the second advancing and retreating member 42 are retracted to the position of the bottom surface 7A of the cavity recess 7), and the sealing resin 13 is further injected. The side surface 2A of the semiconductor wafer 2 is filled with sealing resin over the entire circumference to complete resin sealing.

如此,進退構件40係從基板1的表面1A側來看,被分割成第一進退構件41和第二進退構件42的複數部分,利用控制部21單獨控制進退構件40的複數部分的進退,從而能夠使被注入進來的密封樹脂13的流動成為最佳化,能夠減少未被填充的情況,能夠減少空隙的產生、氣泡的產生,能夠實現更高品質的成型。In this way, the advancing and retreating member 40 is divided into plural parts of the first advancing and retreating member 41 and the second advancing and retreating member 42 when viewed from the surface 1A side of the substrate 1, and the advancing and retreating member 40 is individually controlled by the control unit 21 to advance and retreat, thereby The flow of the injected sealing resin 13 can be optimized, unfilled conditions can be reduced, the generation of voids and bubbles can be reduced, and higher-quality molding can be achieved.

另外,控制部21所致之驅動部20A、20B的控制,也可將因應成型品的構造預先決定第一進退構件41及第二進退構件42的進退條件的表儲存至樹脂密封裝置,在樹脂密封時,使用該表來決定條件。 產業上的可利用性In addition, the control of the drive units 20A and 20B by the control unit 21 can also store a table that predetermines the advance and retreat conditions of the first advance and retreat member 41 and the second advance and retreat member 42 in accordance with the structure of the molded product in the resin sealing device. When sealing, use this table to determine the conditions. Industrial availability

本發明的樹脂密封裝置及樹脂密封方法作為針對在基板的表面以倒裝晶片的方式連接半導體晶片所做成的成型物件進行樹脂密封的裝置及方法是有效的,尤其,理想地適用於即使是針對近年來做得較大型的半導體晶片,也能夠避免發生底部填充不充分以及空隙、氣泡等成型不良的樹脂密封裝置及樹脂密封方法。The resin sealing device and the resin sealing method of the present invention are effective as a device and method for resin sealing a molded article made by flip-chip connection of semiconductor wafers on the surface of a substrate. In particular, it is ideally suited for For semiconductor wafers that have been made larger in recent years, resin sealing devices and resin sealing methods that can avoid insufficient underfilling and poor molding such as voids and bubbles.

1:基板 2:半導體晶片 3:連接電極 4:成型對象 5:上模 6:下模 7:模腔凹部 7B:底部填充空間 8A:澆口 8B:澆道 10:貫通孔 11,17,18,19:進退構件 12:基板載置部 13:密封樹脂 14:加熱容器 15:推柱 16:脫模膜 20:驅動部 21:控制部 22:表 30,31,32,40,41,42:進退構件1: substrate 2: Semiconductor wafer 3: Connect the electrodes 4: molding object 5: Upper die 6: Lower die 7: cavity recess 7B: Fill space at the bottom 8A: Gate 8B: runner 10: Through hole 11, 17, 18, 19: advance and retreat components 12: Board placement section 13: Sealing resin 14: Heating container 15: Push column 16: Release film 20: Drive 21: Control Department 22: table 30, 31, 32, 40, 41, 42: advance and retreat components

[圖1]本發明的實施方式之樹脂密封裝置的模具的示意前視剖面圖。 [圖2]圖1中的上模的仰視圖。 [圖3]表示本實施方式的樹脂密封裝置所進行之樹脂密封成型工程的示意性正面剖視圖。 [圖4]表示本實施方式的樹脂密封裝置所進行之樹脂密封成型工程的示意性正面剖視圖。 [圖5]表示本實施方式的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。 [圖6](a)~(c)分別是表示進退構件的變形例之上模的仰視圖。 [圖7](a)和(b)分別是表示進退構件的其他變形例之上模的仰視圖。 [圖8]圖7的(b)的例子的樹脂密封裝置的模具的示意前視剖面圖。 [圖9]表示圖7的(b)的例子的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。 [圖10]表示圖7的(b)的例子的樹脂密封裝置所進行之樹脂密封成型工程的示意前視剖面圖。 [圖11]先前之樹脂密封裝置的模塑模具的示意仰視圖,圖11的(b)是沿圖11的(a)中的A-A的剖面圖,圖11的(c)是表示樹脂填充完成之前和之後的狀態的沿圖11的(a)中的B-B的剖面圖。[Fig. 1] A schematic front sectional view of a mold of a resin sealing device according to an embodiment of the present invention. [Fig. 2] A bottom view of the upper mold in Fig. 1. [Fig. 3] A schematic front cross-sectional view showing a resin sealing molding process performed by the resin sealing device of this embodiment. [Fig. 4] A schematic front cross-sectional view showing a resin sealing molding process performed by the resin sealing device of this embodiment. [Fig. 5] A schematic front cross-sectional view showing a resin sealing molding process performed by the resin sealing device of this embodiment. [Fig. 6] (a) to (c) are bottom views of the upper mold showing a modification of the advance and retreat member, respectively. [Fig. 7] (a) and (b) are bottom views of the upper mold showing other modifications of the advance and retreat member. [Fig. 8] A schematic front sectional view of a mold of the resin sealing device of the example of Fig. 7(b). [Fig. 9] A schematic front sectional view showing a resin sealing molding process performed by the resin sealing device of the example of Fig. 7(b). [Fig. 10] A schematic front sectional view showing a resin sealing molding process performed by the resin sealing device of the example of Fig. 7(b). [Fig. 11] A schematic bottom view of the molding die of the previous resin sealing device, Fig. 11(b) is a cross-sectional view along AA in Fig. 11(a), and Fig. 11(c) shows that the resin filling is completed A cross-sectional view along BB in FIG. 11(a) of the state before and after.

1:基板 1: substrate

1A:表面 1A: Surface

2:半導體晶片 2: Semiconductor wafer

2A:側面 2A: side

2B:表面 2B: Surface

3:連接電極 3: Connect the electrodes

4:成型對象 4: molding object

5:上模 5: Upper die

6:下模 6: Lower die

7B:底部填充空間 7B: Fill space at the bottom

8A:澆口 8A: Gate

8B:澆道 8B: runner

10:貫通孔 10: Through hole

11:進退構件 11: advance and retreat components

11A:頂端面 11A: Top side

12:基板載置部 12: Board placement section

13:密封樹脂 13: Sealing resin

14:加熱容器 14: Heating container

15:推柱 15: Push column

Claims (7)

一種樹脂密封裝置,該樹脂密封裝置利用第一模具及第二模具夾持成型物件,該成型物件是通過在基板的表面借助連接電極以倒裝晶片的方式連接半導體晶片所做成的,將密封樹脂注入到包含前述基板的表面與前述半導體晶片的連接面之間的間隙部分在內的模腔凹部,來進行樹脂密封成型,其特徵為包含: 進退構件,係朝向前述基板的表面進退於前述模腔凹部內的進退構件,且包圍前述半導體晶片的側面整周的至少一部分;及 控制部,係在使前述進退構件向前述模腔凹部內進入至前述半導體晶片的連接面的位置為止的狀態下,向前述模腔凹部注入前述密封樹脂,將前述密封樹脂填充到前述基板的表面與前述半導體晶片的連接面之間的間隙部分以及前述基板的表面與前述進退構件之間的間隙部分,之後使前述進退構件從前述模腔凹部內退回,並向前述半導體晶片的側面整周填充前述密封樹脂。A resin sealing device uses a first mold and a second mold to clamp a molded object. The molded object is made by connecting a semiconductor wafer on the surface of a substrate by a flip chip using a connecting electrode to seal Resin is injected into the cavity recess including the gap between the surface of the substrate and the connecting surface of the semiconductor wafer to perform resin sealing molding, which is characterized by including: The advance and retreat member is an advance and retreat member that advances and retreats in the cavity recess toward the surface of the substrate, and surrounds at least a part of the entire circumference of the side surface of the semiconductor wafer; and The control unit injects the sealing resin into the cavity recess and fills the sealing resin on the surface of the substrate while the advance and retreat member enters the cavity recess to the position of the connection surface of the semiconductor wafer. The gap portion between the connection surface with the semiconductor wafer and the gap portion between the surface of the substrate and the advance and retreat member, and then the advance and retreat member is retracted from the cavity recess and filled the entire circumference of the side surface of the semiconductor wafer The aforementioned sealing resin. 如請求項1所記載之樹脂密封裝置,其中, 從前述進退構件的進退方向來看時的前述進退構件的外周角部和前述模腔凹部的內周角部都為曲面。The resin sealing device described in claim 1, wherein: When viewed from the advancing and retreating direction of the advancing and retreating member, the outer peripheral corners of the advancing and retreating member and the inner peripheral corners of the cavity recess are both curved. 如請求項1或2所記載之樹脂密封裝置,其中, 前述進退構件,係從前述基板的表面側來看,呈包圍前述半導體晶片的側面整周的大略ロ字形狀來。The resin sealing device described in claim 1 or 2, wherein: The advancing and retreating member has a substantially square shape that surrounds the entire circumference of the side surface of the semiconductor wafer when viewed from the surface side of the substrate. 如請求項1或2所記載之樹脂密封裝置,其中, 前述進退構件,係從前述基板的表面側來看,呈包圍前述半導體晶片的側面整周之除了澆口側部分的大略コ字形狀來。The resin sealing device described in claim 1 or 2, wherein: The advancing and retreating member is formed in a roughly U shape that surrounds the entire circumference of the side surface of the semiconductor wafer except for the gate side portion when viewed from the surface side of the substrate. 如請求項1或2所記載之樹脂密封裝置,其中, 前述進退構件,係從前述基板的表面側來看,呈包圍前述半導體晶片的側面整周之除了通氣孔側部分的大略反コ字形狀來。The resin sealing device described in claim 1 or 2, wherein: The advancing and retreating member has a substantially reverse U-shape that surrounds the entire circumference of the side surface of the semiconductor wafer except for the portion on the side of the vent when viewed from the surface side of the substrate. 如請求項1至5中任一項所記載之樹脂密封裝置,其中, 前述進退構件,係從前述基板的表面側來看,被分割成複數部分, 前述控制部,係單獨控制前述進退構件的複數部分的進退。The resin sealing device described in any one of claims 1 to 5, wherein: The advance and retreat member is divided into plural parts when viewed from the surface side of the substrate, The control unit individually controls the advance and retreat of the plural parts of the advance and retreat member. 一種樹脂密封方法,在該樹脂密封方法中,利用第一模具及第二模具夾持成型物件,該成型物件是通過在基板的表面借助連接電極以倒裝晶片的方式連接半導體晶片所做成的,將密封樹脂注入到包含前述基板的表面與前述半導體晶片的連接面之間的間隙部分在內的模腔凹部,來進行樹脂密封成型,其特徵為包含: 使進退構件朝向前述模腔凹部內進入至前述半導體晶片的連接面的位置為止,向前述模腔凹部注入前述密封樹脂,將前述密封樹脂填充到前述基板的表面與前述半導體晶片的連接面之間的間隙部分以及前述基板的表面與前述進退構件之間的間隙部分,其中,該進退構件係朝向前述基板的表面進退於前述模腔凹部內,且該進退構件包圍前述半導體晶片的側面整周的至少一部分;以及 使前述進退構件從前述模腔凹部內退回,並向前述半導體晶片的側面整周填充前述密封樹脂。A resin sealing method. In the resin sealing method, a first mold and a second mold are used to clamp a molded object, and the molded object is made by connecting a semiconductor chip on the surface of a substrate by flip chip connection with a connection electrode , Inject a sealing resin into the cavity recess including the gap between the surface of the substrate and the connection surface of the semiconductor wafer to perform resin sealing molding, which is characterized by including: The advance and retreat member is moved into the cavity recessed portion to the position of the connection surface of the semiconductor wafer, the sealing resin is injected into the cavity recess, and the sealing resin is filled between the surface of the substrate and the connection surface of the semiconductor wafer The gap portion between the surface of the substrate and the advance and retreat member, wherein the advance and retreat member advances and retreats in the cavity recess toward the surface of the substrate, and the advance and retreat member surrounds the entire circumference of the side surface of the semiconductor wafer At least part of; and The advance and retreat member is retracted from the cavity recess, and the sealing resin is filled all around the side surface of the semiconductor wafer.
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