JP2002009096A - Method and apparatus for resin sealing - Google Patents

Method and apparatus for resin sealing

Info

Publication number
JP2002009096A
JP2002009096A JP2000185328A JP2000185328A JP2002009096A JP 2002009096 A JP2002009096 A JP 2002009096A JP 2000185328 A JP2000185328 A JP 2000185328A JP 2000185328 A JP2000185328 A JP 2000185328A JP 2002009096 A JP2002009096 A JP 2002009096A
Authority
JP
Japan
Prior art keywords
resin
substrate
semiconductor chip
sealing
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000185328A
Other languages
Japanese (ja)
Inventor
Fumio Miyajima
文夫 宮島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Apic Yamada Corp
Original Assignee
Apic Yamada Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apic Yamada Corp filed Critical Apic Yamada Corp
Priority to JP2000185328A priority Critical patent/JP2002009096A/en
Priority to US09/884,054 priority patent/US20020017738A1/en
Publication of JP2002009096A publication Critical patent/JP2002009096A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • B29C2045/14663—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame the mould cavity walls being lined with a film, e.g. release film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H01L2224/75315—Elastomer inlay
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for resin sealing which can perform a uniform underfill molding for a flip-chip bonded semiconductor package and can reduce a manufacturing cost and running cost. SOLUTION: For underfill molding, sealing resin 22 is force-fed priorly into a space 21 between a semiconductor chip 6 and a substrate 2. A molded gate runner 25 connected to an underfill section 24 is separated at the end of the substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する利用分野】本発明は、基板に半導体チッ
プがフリップチップ接続された被成形品をモールド金型
によりクランプし、半導体チップと基板との隙間部分を
含むキャビティに封止樹脂を圧送して樹脂封止する樹脂
封止方法及び樹脂封止装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for clamping a molded product in which a semiconductor chip is flip-chip connected to a substrate by a mold, and forcing the sealing resin into a cavity including a gap between the semiconductor chip and the substrate. The present invention relates to a resin sealing method and a resin sealing device for performing resin sealing with a resin.

【０００２】[0002]

【従来の技術】半導体チップを基板にフリップチップ接
続した後、該半導体チップと基板との間の熱応力による
影響を緩和するため、所謂アンダーフィルモールドが行
われている。このアンダーフィルモールドは、半導体チ
ップの一辺又は二辺に相当する周囲にポッティングによ
り液状樹脂を垂らして基板を傾けることにより、毛細管
現象により半導体チップと基板との隙間に樹脂を注入
し、加熱硬化させて樹脂封止するものである。2. Description of the Related Art After a semiconductor chip is flip-chip connected to a substrate, so-called underfill molding is performed to reduce the influence of thermal stress between the semiconductor chip and the substrate. In this underfill mold, a liquid resin is dropped by potting around a side corresponding to one side or two sides of a semiconductor chip to incline the substrate, thereby injecting the resin into a gap between the semiconductor chip and the substrate by a capillary phenomenon and heating and curing. And resin sealing.

【０００３】また、半導体チップと基板との隙間が狭小
化して液状樹脂に気泡が生じ易く、フィラーなどを含有
するため流れ性が悪いこと、更には生産効率の低さなど
の理由から、本件出願人は、ポッティング法に替えてト
ランスファー成形法によりアンダーフィルモールドを行
う樹脂封止方法及び樹脂封止装置を提案した（特開平１
１−２７４１９７号公報参照）。[0003] Further, because the gap between the semiconductor chip and the substrate is narrowed, bubbles are easily generated in the liquid resin, the flowability is poor due to the inclusion of fillers, and the production efficiency is low. A person has proposed a resin sealing method and a resin sealing apparatus for performing an underfill mold by a transfer molding method instead of the potting method (Japanese Patent Laid-Open Publication No.
1-274197).

【０００４】この方法は、半導体チップがフリップチッ
プされた基板（被成形品）を下型へセットし、基板上及
び樹脂路を覆うリリースフイルムを上下金型面に各々吸
着させて、ポットに樹脂タブレットを投入する。そし
て、モールド金型を型閉じして被成形品をクランプし
て、樹脂タブレットを加熱溶融させながらプランジャに
より圧送りして樹脂封止するものである。この場合、半
導体チップと基板との隙間部分へのアンダーフィルモー
ルドを確実に行うため、半導体チップの両側面部（アン
ダーフィル部への樹脂充填方向に対して両側部）にサイ
ドブロックを設けて、該サイドブロックを予めキャビテ
ィ凹部内へ突出させてリリースフィルムを基板上に押さ
えてアンダーフィルモールドを行い、樹脂が半導体チッ
プの下流側より流出する際にサイドブロックを退避させ
て半導体チップの残る両側面部を樹脂封止するようにな
っている。In this method, a substrate (molded product) on which a semiconductor chip is flip-chip mounted is set on a lower mold, and a release film covering the substrate and the resin path is adsorbed to upper and lower mold surfaces, respectively, and the resin is placed in a pot. Insert the tablet. Then, the mold is closed, the molded object is clamped, and the resin tablet is heated and melted, and is pressure-fed by a plunger to seal the resin. In this case, in order to reliably perform underfill molding in the gap between the semiconductor chip and the substrate, side blocks are provided on both side surfaces of the semiconductor chip (both sides in the resin filling direction of the underfill portion). The side block is projected into the cavity recess in advance, the release film is pressed onto the substrate, and underfill molding is performed. When the resin flows out from the downstream side of the semiconductor chip, the side block is retracted and the remaining side surfaces of the semiconductor chip are removed. It is designed to be sealed with resin.

【０００５】[0005]

【発明が解決しようとする課題】特開平１１−２７４１
９７号公報に開示されている樹脂封止方法及び樹脂封止
装置は、上下リリースフィルムにより挟まれてモールド
金型より離型した成形品には、不用樹脂である成形品ゲ
ートランナが一体となっており、この成形品のゲートブ
レイクをモールド金型上で行うか或いはモールド金型外
へ取出してから行うかのいずれかにより行う必要があ
る。しかしながら、モールド金型上でゲートブレイクし
ても上下にリリースフィルムにより覆われている状態
で、成形品（パッケージ）と不要樹脂とをいかにして分
離して取出すかが課題として残り、封止装置を自動化す
るには成形品の取出構造が煩雑になるおそれがある。ま
た、成形品をモールド金型外へ取出してからゲートブレ
イクする場合には、リリースフィルムと共に成形品を搬
送する際に、パッケージに成形品ゲートランナが一体に
なっているため成形品が撓み易いため、成形品を破損し
易く、不要樹脂が成形品ランナの途中などで折れて落下
するおそれがあるなどの不具合が生ずる。Problems to be Solved by the Invention
In the resin sealing method and the resin sealing device disclosed in Japanese Patent Publication No. 97, a molded product gate runner, which is an unnecessary resin, is integrated with a molded product sandwiched between upper and lower release films and released from a mold. Therefore, it is necessary to perform the gate break of this molded product either on the mold or after taking it out of the mold. However, even if a gate break occurs on a mold, how to separate and remove a molded product (package) and unnecessary resin remains in the state of being covered with a release film at the top and bottom. In order to automate the process, there is a possibility that the structure for taking out the molded product becomes complicated. Also, when the molded product is taken out of the mold and then gate-breaked, when the molded product is transported together with the release film, the molded product is easily bent because the molded product gate runner is integrated into the package. In addition, the molded product is easily damaged, and there arises a problem that the unnecessary resin may be broken and fall in the middle of the molded product runner.

【０００６】本発明の目的は、上記従来技術の課題を解
決し、フリップチップ実装されたパッケージのアンダー
フィルモールドが均一に行え、製造コスト、ランニング
コストが削減でき、しかも成形後のゲートブレイクが定
位置で容易に行える樹脂封止方法及び樹脂封止装置を提
供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems of the prior art, to uniformly perform underfill molding of a package mounted with flip chips, to reduce manufacturing costs and running costs, and to reduce gate breaks after molding. An object of the present invention is to provide a resin sealing method and a resin sealing device which can be easily performed at a position.

【０００７】[0007]

【課題を解決するための手段】上記課題を解決するた
め、本発明は次の構成を備える。即ち、樹脂封止方法に
おいては、被成形品をモールド金型内に搬入し、半導体
チップを収容するキャビティ凹部及び該キャビティ凹部
に連通する樹脂路を含む上型面をリリースフィルムによ
り覆って上型及び下型により被成形品をクランプし、半
導体チップと基板との隙間部分へ優先的に封止樹脂を圧
送りしてアンダーフィルモールドを行い、アンダーフィ
ル部に接続する成形品ゲートランナを基板端位置で分離
することを特徴とする。また、半導体チップの両側面部
で上型に設けられた可動ブロックを予めキャビティ凹部
内へ突出させリリースフィルムを基板上に押接してアン
ダーフィルモールドを行い、可動ブロックを退避させて
半導体チップの両側面部を樹脂封止することを特徴とす
る。また、成形品ゲートランナのうち基板端からアンダ
ーフィル部に連絡する部位の成形樹脂厚が、基板端より
ポット側の成形樹脂厚より薄くなるように樹脂封止する
ことを特徴とする。また、基板上に残存する成形品ラン
ナの基板端位置にはＶ溝が形成されて樹脂封止されるこ
とを特徴とする。また、上型の基板端位置には可動ゲー
トピンが樹脂路に対して突き出し可能に設けられてお
り、アンダーフィルモールド後に可動ゲートピンにより
樹脂路を閉鎖することにより、基板端位置の封止樹脂を
ポット側へ押し戻して樹脂封止することを特徴とする。
また、上型には基板端よりキャビティ凹部に連絡する樹
脂路へ可動ランナブロックが突き出し可能に設けられて
おり、アンダーフィルモールド後に可動ランナブロック
により樹脂路を閉鎖することにより、基板上の封止樹脂
をポット側へ押し戻して樹脂封止することを特徴とす
る。To solve the above-mentioned problems, the present invention has the following arrangement. That is, in the resin sealing method, an article to be molded is carried into a mold, and an upper mold surface including a cavity recess accommodating a semiconductor chip and a resin path communicating with the cavity recess is covered by a release film. Then, the molded product is clamped by the lower die, the sealing resin is preferentially fed to the gap between the semiconductor chip and the substrate, and underfill molding is performed, and the molded product gate runner connected to the underfill portion is connected to the substrate end. It is characterized by separating at a position. Also, the movable block provided on the upper mold on both sides of the semiconductor chip is projected in advance into the cavity recess, the release film is pressed against the substrate to perform underfill molding, and the movable block is retracted to remove the movable block. Is resin-sealed. The resin sealing is performed so that the molded resin thickness at a portion of the molded product gate runner that communicates from the substrate end to the underfill portion is smaller than the molded resin thickness at the pot side from the substrate end. Further, a V-groove is formed at a substrate end position of the molded product runner remaining on the substrate, and is sealed with a resin. In addition, a movable gate pin is provided at the end of the upper substrate so as to protrude from the resin path. By closing the resin path by the movable gate pin after underfill molding, the sealing resin at the end of the substrate is potted. It is characterized by being pushed back to the side and sealed with resin.
A movable runner block is provided on the upper mold so as to protrude from the end of the substrate to a resin path communicating with the cavity recess, and the resin path is closed by the movable runner block after underfill molding, thereby sealing the substrate. It is characterized in that the resin is pushed back to the pot side and sealed with the resin.

【０００８】また、樹脂封止装置においては、被成形品
を載置する下型と、半導体チップを収容するキャビティ
凹部、該キャビティ凹部に連通する樹脂路が形成された
上型とを具備したモールド金型と、上型のキャビティ凹
部及び該キャビティ凹部に連通する樹脂路を覆うリリー
スフィルムとを備え、半導体チップと基板との隙間部分
より優先的に封止樹脂を圧送りしてアンダーフィルモー
ルドを行うと共に、該アンダーフィル部に接続する成形
品ゲートランナを基板上に残したまま半導体チップを樹
脂封止することを特徴とする。また、上型には、半導体
チップの両側面部に可動ブロックがキャビティ凹部内へ
突出可能に設けられており、該可動ブロックを予めキャ
ビティ凹部内へ突出させてリリースフィルムを基板上に
押接してアンダーフィルモールドを行い、可動ブロック
を退避させて半導体チップの両側面部を樹脂封止するこ
とを特徴とする。また、上型に形成された金型ゲートラ
ンナのうち基板端からキャビティ凹部に連絡する部位の
樹脂路断面が、基板端よりポットに連絡する部位の樹脂
路断面より小さく形成されていることを特徴とする。ま
た、半導体チップの少なくとも各コーナー部を含む上縁
部には面取り部が形成されていることを特徴とする。ま
た、上型の基板端位置には可動ゲートピンが樹脂路に対
して突き出し可能に設けられており、アンダーフィルモ
ールド後に可動ゲートピンにより樹脂路を閉鎖すること
により、基板端位置の封止樹脂をポット側へ押し戻して
樹脂封止することを特徴とする。また、上型には基板端
よりキャビティ凹部に連絡する樹脂路へ可動ランナブロ
ックが突き出し可能に設けられており、アンダーフィル
モールド後に可動ランナブロックにより樹脂路を閉鎖す
ることにより、基板上の封止樹脂をポット側へ押し戻し
て樹脂封止することを特徴とする。In a resin sealing device, a mold having a lower mold for mounting a molded article, a cavity recess for accommodating a semiconductor chip, and an upper mold having a resin passage communicating with the cavity recess is formed. A mold and a release film that covers a cavity recess of the upper mold and a resin path communicating with the cavity recess, and the underfill mold is formed by pressure-feeding the sealing resin preferentially from a gap between the semiconductor chip and the substrate. In addition, the semiconductor chip is sealed with a resin while the molded product gate runner connected to the underfill portion is left on the substrate. In the upper die, movable blocks are provided on both side surfaces of the semiconductor chip so as to be able to protrude into the cavity recess. The movable block is protruded into the cavity recess in advance, and the release film is pressed against the substrate so that the under film is pressed. The semiconductor device is characterized in that fill molding is performed, the movable block is retracted, and both side surfaces of the semiconductor chip are sealed with resin. In addition, the resin path cross section of a portion of the mold gate runner formed on the upper die that communicates from the substrate end to the cavity recess is formed to be smaller than the resin path cross section of the portion that communicates with the pot from the substrate end. And In addition, a chamfer is formed at an upper edge portion including at least each corner portion of the semiconductor chip. In addition, a movable gate pin is provided at the end of the upper substrate so as to protrude from the resin path. By closing the resin path by the movable gate pin after underfill molding, the sealing resin at the end of the substrate is potted. It is characterized by being pushed back to the side and sealed with resin. In addition, a movable runner block is provided on the upper mold so as to protrude from the end of the substrate to a resin path communicating with the cavity recess, and the resin path is closed by the movable runner block after underfill molding, thereby sealing the substrate. It is characterized in that the resin is pushed back to the pot side and sealed with the resin.

【０００９】[0009]

【発明の実施の形態】以下、本発明に係る樹脂封止方法
及び樹脂封止装置の好適な実施の形態について添付図面
と共に詳述する。 ［第１実施例］先ず、基板に半導体チップがフリップチ
ップ接続された被成形品をトランスファ成形により樹脂
封止する樹脂封止方法及び樹脂封止装置について説明す
る。図１（ａ）（ｂ）（ｃ）は樹脂封止装置のモールド
金型の模式上視図、矢印Ａ−Ａ断面図及び樹脂充填完了
前後の状態を示す矢印Ｂ−Ｂ断面図、図２（ａ）（ｂ）
（ｃ）は樹脂封止後の成形品の斜視図、上視図及び矢印
Ｃ−Ｃ断面図、図３（ａ）（ｂ）（ｃ）（ｄ）（ｅ）は
他例に係る樹脂封止後の成形品の斜視図、上視図、矢印
Ｃ−Ｃ断面図、矢印Ｄ−Ｄ断面図及び半導体チップ形状
の説明図、図４（ａ）（ｂ）（ｃ）は可動ブロックの形
状を示す説明図、図５（ａ）（ｂ）（ｃ）及び図６
（ａ）（ｂ）（ｃ）は他例に示す樹脂封止装置のモール
ド金型の模式上視図、矢印Ａ−Ａ断面図及び樹脂充填完
了前後の状態を示す矢印Ｂ−Ｂ断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a resin sealing method and a resin sealing apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. [First Embodiment] First, a resin sealing method and a resin sealing apparatus for resin-sealing a molded product in which a semiconductor chip is flip-chip connected to a substrate by transfer molding will be described. 1 (a), 1 (b), and 1 (c) are a schematic top view of a mold for a resin sealing device, a cross-sectional view taken along a line AA, and a cross-sectional view taken along a line BB showing states before and after completion of resin filling. (A) (b)
(C) is a perspective view, a top view, and an arrow CC cross-sectional view of the molded product after resin sealing, and FIGS. 3 (a), (b), (c), (d), and (e) show resin sealing according to another example. 4 (a), 4 (b) and 4 (c) are perspective views, a top view, an arrow CC cross-sectional view, an arrow DD cross-sectional view, and an explanatory view of a semiconductor chip shape after stopping. FIGS. 5 (a), 5 (b), (c) and 6
(A), (b), and (c) are a schematic top view of a molding die of a resin sealing device shown in another example, an arrow AA cross-sectional view, and an arrow BB cross-sectional view showing a state before and after resin filling is completed. is there.

【００１０】先ず、樹脂封止装置の概略構成について図
１及び図２を参照して説明する。図１（ｂ）において、
１はモールド金型であり、基板２を載置する下型３と、
樹脂路が形成された上型４とを備えている。上型４の上
型ブロック５には、基板２にフリップチップ接続された
半導体チップ６を収容するキャビティ凹部７、該キャビ
ティ凹部７に連通する金型ゲートランナ８、金型カル９
などの樹脂路が形成されている。被成形品は、半導体チ
ップ６をバンプ又ははんだボールなどの電極端子６ａを
介してフリップチップ接続された基板２が用いられる。
基板２としては、エポキシ系樹脂基板、ポリイミド系樹
脂基板、ＢＴ（Bismaleimide・Triazine）基板の他にセ
ラミックス基板なども用いられる。また、基板２は、単
層基板でも多層基板のいずれでも良い。First, a schematic configuration of a resin sealing device will be described with reference to FIGS. In FIG. 1B,
Reference numeral 1 denotes a molding die, and a lower die 3 on which the substrate 2 is placed;
And an upper mold 4 in which a resin path is formed. The upper die block 5 of the upper die 4 has a cavity recess 7 for accommodating a semiconductor chip 6 flip-chip connected to the substrate 2, a mold gate runner 8 communicating with the cavity recess 7, and a mold cull 9.
Resin path is formed. The substrate 2 to which the semiconductor chip 6 is flip-chip connected to the semiconductor chip 6 via an electrode terminal 6a such as a bump or a solder ball is used.
As the substrate 2, a ceramic substrate or the like is used in addition to an epoxy resin substrate, a polyimide resin substrate, and a BT (Bismaleimide / Triazine) substrate. Further, the substrate 2 may be a single-layer substrate or a multilayer substrate.

【００１１】上型４には、半導体チップ６の両側面部
（アンダーフィル部への樹脂充填方向に対して両側部）
に可動ブロック（フィレットフォーク）１０がキャビテ
ィ凹部７内へ突出可能に設けられている。この可動ブロ
ック１０は、図示しないシリンダ駆動により、キャビテ
ィ凹部７内へ突出可能に設けられている。尚、アンダー
フィルモールドが優先的に行えるのであれば、可動ブロ
ック１０は省略可能であり、この場合には半導体チップ
６の両側面部はキャビティ凹部７の内壁面であっても良
い。また、下型３には基板２を載置する基板搭載部１
１、該基板搭載部１１を形成する下型インサートブロッ
ク１２、図示しないプランジャを内臓したポット１３、
ポット１３の周囲に設けられたポットインサート１４、
下型インサートブロック１２の周囲に設けられたエンド
ブロック１５、上記ポットインサート１４、下型インサ
ートブロック１２、エンドブロック１５を支持する下型
ベースブロック１６などが設けられている。下型インサ
ートブロック１２は下型ベースブロック１６との間に弾
装された下型スプリング１７により上方へ付勢されてい
る。The upper die 4 has both side surfaces of the semiconductor chip 6 (both sides in the direction of filling the underfill portion with the resin).
A movable block (fillet fork) 10 is provided to be able to protrude into the cavity recess 7. The movable block 10 is provided so as to be able to protrude into the cavity recess 7 by driving a cylinder (not shown). Note that the movable block 10 can be omitted if underfill molding can be performed preferentially. In this case, both side surfaces of the semiconductor chip 6 may be the inner wall surfaces of the cavity recess 7. The lower die 3 has a substrate mounting portion 1 on which the substrate 2 is mounted.
1, a lower insert block 12 for forming the substrate mounting portion 11, a pot 13 with a built-in plunger (not shown),
A pot insert 14 provided around the pot 13,
An end block 15 provided around the lower insert block 12, the pot insert 14, the lower insert block 12, a lower base block 16 for supporting the end block 15, and the like are provided. The lower insert block 12 is urged upward by a lower spring 17 elastically mounted between the lower insert block 12 and the lower base block 16.

【００１２】１８はリリースフィルムであり、上型４の
キャビティ凹部７及び該キャビティ凹部７に連通する樹
脂路（金型ゲートランナ８、金型カル９など）を覆い、
半導体チップ６及び基板２の上面を露出させて樹脂封止
する。リリースフィルム１８は、モールド金型１の加熱
温度に耐えられる耐熱性を有するもので、金型面より容
易に剥離するものであって、柔軟性、伸展性を有するフ
ィルム材、例えば、ＰＴＦＥ、ＥＴＦＥ、ＰＥＴ、ＦＥ
Ｐ、フッ素含浸ガラスクロス、ポリプロピレン、ポリ塩
化ビニリジン等が好適に用いられる。リリースフィルム
１８は、上型ブロック５のパーティング面に形成された
図示しない吸着穴よりエアーを吸引することで、吸着保
持される。リリースフィルム１８は、リール間に巻回さ
れた長尺状のものをリリースフィルム供給機構（図示せ
ず）により連続してモールド金型１へ供給するようにな
っていても、或いは予め短冊状に切断されたものを用い
ても良い。Reference numeral 18 denotes a release film which covers the cavity recess 7 of the upper mold 4 and a resin path (mold gate runner 8, mold cull 9, etc.) communicating with the cavity recess 7.
The upper surfaces of the semiconductor chip 6 and the substrate 2 are exposed and sealed with resin. The release film 18 has heat resistance to withstand the heating temperature of the mold 1 and is easily peeled off from the mold surface. The release film 18 has flexibility and extensibility, for example, PTFE, ETFE. , PET, FE
P, fluorine impregnated glass cloth, polypropylene, polyvinylidene chloride and the like are preferably used. The release film 18 is suction-held by sucking air from suction holes (not shown) formed in the parting surface of the upper die block 5. The release film 18 may be configured such that a long film wound between reels is continuously supplied to the mold 1 by a release film supply mechanism (not shown), or it may be previously formed into a strip shape. Cut pieces may be used.

【００１３】下型インサートブロック１２には、突出ピ
ン１９が上方に突出して設けられており、先端部が基板
２より上方に突出している。上型ブロック５には、突出
ピン１９に対向する位置に挿入穴２０が設けられてい
る。モールド金型１をクランプする際に、突出ピン１９
がリリースフィルム１８を挿入穴２０に若干押し込んで
リリースフィルム１８の皺やたるみを矯正するようにな
っている。また、図１（ａ）（ｂ）において、上型４の
金型ゲートランナ８のうち基板端からキャビティ凹部７
に連絡する部位の樹脂路断面が、基板端よりポット１３
に連絡する部位の樹脂路断面より小さく形成されてい
る。これによって、成形品ランナの基板端に応力集中し
易くして、ゲートブレイクが定位置で容易に行える。ま
た、樹脂封止装置は、例えば下型３を電動モータにより
トグル機構などを用いて上下動させてモールド金型１を
開閉する公知の型開閉機構、ポット１３より樹脂路を経
て封止樹脂をキャビティへ圧送するトランスファ機構な
どが装備されている。A projecting pin 19 is provided on the lower mold insert block 12 so as to protrude upward, and a tip end protrudes above the substrate 2. The upper die block 5 is provided with an insertion hole 20 at a position facing the protruding pin 19. When clamping the mold 1, the projecting pins 19
However, the release film 18 is slightly pressed into the insertion hole 20 to correct wrinkles and slack of the release film 18. 1 (a) and 1 (b), the cavity recesses 7 from the substrate end of the die gate runner 8 of the upper die 4.
The cross section of the resin path at the portion contacting the
Is formed smaller than the section of the resin path at the portion that communicates with. As a result, stress is easily concentrated on the substrate end of the molded product runner, and gate break can be easily performed at a fixed position. Further, the resin sealing device is, for example, a known mold opening and closing mechanism that opens and closes the mold 1 by moving the lower mold 3 up and down by an electric motor using a toggle mechanism or the like. It is equipped with a transfer mechanism for pressure feeding to the cavity.

【００１４】樹脂封止方法について説明すると、上型４
の半導体チップ６を収容するキャビティ凹部７、該キャ
ビティ凹部７に連通する樹脂路を含む上型面にリリース
フィルム１８を吸着保持しておく。そして、半導体チッ
プ６をフリップチップ接続された基板２をモールド金型
１の下型３の基板搭載部１１に搬入し、ポットに樹脂タ
ブレットを投入して図示しない型開閉機構を作動させて
モールド金型１をクランプする。そして、図示しないト
ランスファ機構を作動させて、プランジャを上昇させて
ポット１３より樹脂路を経てキャビティへ封止樹脂を圧
送りする。The resin sealing method will be described.
The release film 18 is suction-held on the upper mold surface including the cavity recess 7 for accommodating the semiconductor chip 6 and the resin path communicating with the cavity recess 7. Then, the substrate 2 to which the semiconductor chip 6 is flip-chip connected is carried into the substrate mounting portion 11 of the lower mold 3 of the molding die 1, a resin tablet is put into a pot, and a mold opening / closing mechanism (not shown) is operated to activate the molding die. Clamp the mold 1. Then, by operating a transfer mechanism (not shown), the plunger is raised, and the sealing resin is pressure-fed from the pot 13 to the cavity via the resin path.

【００１５】このとき、図１（ｃ）の左半図に示すよう
に、予め半導体チップ６両側面部に設けられた可動ブロ
ック１０をキャビティ凹部７内へ突出させてリリースフ
ィルム１８を基板２上に押接した状態にすることによ
り、半導体チップ６と基板２との隙間部分２１へ優先的
に封止樹脂２２を圧送りしてアンダーフィルモールドを
行う。そして、封止樹脂２２が半導体チップ６のゲート
側から下流側に到達すると、図１（ｃ）の右半図に示す
ように、可動ブロック１０を上方に退避させて樹脂封止
を行う。尚、可動ブロック１０を基板２より退避させる
タイミングは、少なくともアンダーフィル部２４に封止
樹脂２２が充填されると同時若しくはそれ以降であるの
が望ましい。これにより、図２（ａ）〜（ｃ）に示すよ
うに、成形品２３はアンダーフィル部２４に接続する成
形品ゲートランナ２５の一部を基板２上に残したまま樹
脂成形される。成形品ゲートランナ２５は、基板端にお
いて樹脂路断面が絞られて形成されているので、基板端
に応力集中し易く、ゲートブレイクが定位置で容易に行
われる。尚、図２（ｂ）に示すように、半導体チップ６
の各コーナー部６ｂより周囲に封止樹脂２２が回り込ん
で樹脂リング部２４ａが形成されていても良い。この場
合には、半導体チップ６のコーナー部６ｂで発生し易い
応力集中を緩和でき、半導体チップ６を損傷するおそれ
がない。この場合には、基板２上の樹脂路にも金めっき
が施されているのが望ましい。At this time, as shown in the left half view of FIG. 1C, the movable blocks 10 provided in advance on both side surfaces of the semiconductor chip 6 are projected into the cavity recesses 7 and the release film 18 is placed on the substrate 2. With the pressed state, the sealing resin 22 is preferentially fed to the gap 21 between the semiconductor chip 6 and the substrate 2 to perform underfill molding. Then, when the sealing resin 22 reaches the downstream side from the gate side of the semiconductor chip 6, as shown in the right half view of FIG. 1C, the movable block 10 is retracted upward to perform resin sealing. It is desirable that the movable block 10 be retracted from the substrate 2 at the same time as the sealing resin 22 is filled into the underfill portion 24 or later. As a result, as shown in FIGS. 2A to 2C, the molded product 23 is resin-molded while leaving a part of the molded product gate runner 25 connected to the underfill portion 24 on the substrate 2. Since the molded product gate runner 25 is formed by narrowing the resin path cross section at the end of the substrate, stress is easily concentrated on the end of the substrate, and gate break is easily performed at a fixed position. Note that, as shown in FIG.
The sealing resin 22 may extend around each corner 6b to form a resin ring 24a. In this case, the stress concentration easily generated at the corner portion 6b of the semiconductor chip 6 can be reduced, and there is no possibility that the semiconductor chip 6 is damaged. In this case, it is desirable that the resin path on the substrate 2 is also plated with gold.

【００１６】また、図３（ａ）〜（ｃ）において、基板
２上に残存する成形品ゲートランナ２５の基板端位置に
は基板端面に対して傾斜したＶ溝２６が形成されていて
も良い。このＶ溝２６は、上型ブロック５に形成された
樹脂路のうちの基板端位置に突設された突部などにより
形成しても良い。この場合には、成形品ゲートランナ２
５の基板端位置に形成されたＶ溝２６より確実かつ少な
い応力でゲートブレイクすることができる。また、図３
（ｄ）に示すように、半導体チップ６の各コーナー部６
ｂには面取り部６ｃが形成されているのが好ましく、更
には図３（ｅ）に示すように、各コーナー部６ｂを含む
上縁部全周に面取り部６ｃが形成されていても良い。面
取り部６ｃは、例えば段付きの砥石を用いて半導体チッ
プ６に対して面取り加工して形成する。この面取り部６
ｃにより、リリースフィルム１８が破れ難くなり、生産
性が向上する。また、リリースフィルム１８の過度の伸
びが防止できるので、該フィルム１８が膨らまされたと
きの各コーナー部６ｂによるエッジ痕跡を無くすことが
できる。3 (a) to 3 (c), a V-groove 26 inclined with respect to the substrate end surface may be formed at the substrate end position of the molded product gate runner 25 remaining on the substrate 2. . The V-groove 26 may be formed by a protrusion or the like protruding from the resin path formed in the upper die block 5 at the end of the substrate. In this case, the molded product gate runner 2
The gate break can be performed more reliably and with less stress than the V-groove 26 formed at the end position of the substrate 5. FIG.
As shown in (d), each corner 6 of the semiconductor chip 6
It is preferable that a chamfered portion 6c is formed in b. Further, as shown in FIG. 3E, a chamfered portion 6c may be formed on the entire periphery of the upper edge portion including each corner 6b. The chamfered portion 6c is formed by chamfering the semiconductor chip 6 using, for example, a stepped grindstone. This chamfer 6
With c, the release film 18 is hardly torn, and the productivity is improved. Further, since the release film 18 can be prevented from being excessively stretched, it is possible to eliminate an edge trace due to each corner 6b when the film 18 is expanded.

【００１７】また、可動ブロック１０の先端部形状は、
図４（ａ）に示すように、半導体チップ側先端部に段差
１０ａが形成されたもの、図４（ｂ）に示すように半導
体チップ側先端部にテーパー部１０ｂが形成されたも
の、図４（ｃ）に示すように半導体チップ側先端部に面
取り部１０ｃが形成されたものなどいずれの態様を採用
しても良い。The shape of the tip of the movable block 10 is as follows.
As shown in FIG. 4A, a semiconductor chip having a step 10a formed at the tip thereof, a semiconductor chip having a tapered portion 10b formed at the tip as shown in FIG. 4B, FIG. As shown in (c), any mode such as one having a chamfered portion 10c formed at the tip of the semiconductor chip side may be adopted.

【００１８】上記樹脂封止方法及び樹脂封止装置によれ
ば、従来モールド金型１の上下に使用しているリリース
フィルム１８のうち、上フィルムのみ使用し下フィルム
を省略して既存の樹脂封止方法及び樹脂封止装置を使用
できるため、製造コストやランニングコストを低減でき
る。また、下フィルムを省略できるので、成形品２３を
下型３側に載置したまま型開きして取り出しできるの
で、取出動作が簡略化できる。また、基板端の成形品ゲ
ートランナ２５の断面積を絞ったりＶ溝２６を形成した
りすることで該基板端に応力集中し易く、不要樹脂のゲ
ートブレイクが小さい応力でしかも定位置で確実に行え
る。According to the resin sealing method and the resin sealing apparatus, of the release films 18 conventionally used above and below the mold 1, only the upper film is used, and the lower film is omitted, and the existing resin sealing is omitted. Since the stopping method and the resin sealing device can be used, manufacturing costs and running costs can be reduced. Further, since the lower film can be omitted, the molded product 23 can be opened and removed while the molded product 23 is placed on the lower mold 3 side, so that the removing operation can be simplified. Further, by narrowing the cross-sectional area of the molded product gate runner 25 at the end of the substrate or forming the V-groove 26, stress is easily concentrated on the end of the substrate, and the gate break of unnecessary resin is small stress and surely at a fixed position. I can do it.

【００１９】次に、樹脂封止方法及び樹脂封止装置の他
例について図５及び図６を参照して説明する。尚、図１
の樹脂封止装置と同一部材には、同一番号を付して説明
を援用する。図５（ａ）（ｂ）において、上型４の樹脂
路の基板端位置に、可動ゲートピン２７が樹脂路に対し
て突き出し可能に設けられている。可動ゲートピン２７
は、図示しないシリンダ等による駆動により樹脂路に突
出して該樹脂路を閉鎖可能に設けられている。この可動
ゲートピン２７は、例えばアンダーフィルモールド後
に、図５（ｃ）に示す半導体チップ６の両側面部（アン
ダーフィル部への樹脂充填方向に対して両側部）に設け
られた可動ブロック１０を退避させるのと同時かそれ以
降の所定のタイミングで可動ゲートピン２７を樹脂路へ
突き出して閉鎖することにより、基板端位置の封止樹脂
２２をポット１３側へ押し戻して樹脂封止する。上記樹
脂封止方法及び樹脂封止装置によれば、成形品２３の基
板端の成形品ゲートランナ２５の樹脂厚を薄くでき、ゲ
ートブレイクをし易くできる。Next, another example of the resin sealing method and the resin sealing apparatus will be described with reference to FIGS. FIG.
The same members as those of the resin sealing device described above are denoted by the same reference numerals, and the description is referred to. In FIGS. 5A and 5B, a movable gate pin 27 is provided at the end of the resin path of the upper die 4 so as to protrude from the resin path. Movable gate pin 27
Is provided so as to protrude into the resin path by being driven by a not-shown cylinder or the like so that the resin path can be closed. The movable gate pins 27 retract the movable blocks 10 provided on both side surfaces (both sides in the resin filling direction of the underfill portion) of the semiconductor chip 6 shown in FIG. 5C, for example, after underfill molding. The movable gate pin 27 is protruded into the resin path and closed at the same time as or at a predetermined timing thereafter, whereby the sealing resin 22 at the substrate end position is pushed back to the pot 13 side and sealed with the resin. According to the resin sealing method and the resin sealing device, the resin thickness of the molded product gate runner 25 at the substrate end of the molded product 23 can be reduced, and gate break can be easily performed.

【００２０】また、図６（ａ）（ｂ）において、上型４
の基板端から隙間部分にわたる樹脂路に対して可動ラン
ナブロック２８が突き出し可能に設けられている。この
可動ランナブロック２８は図示しないシリンダ等による
駆動により樹脂路に突出して該樹脂路を閉鎖可能に設け
られている。可動ランナブロック２８は、アンダーフィ
ルモールド後に、図６（ｃ）に示す半導体チップ６の両
側面部（アンダーフィル部への樹脂充填方向に対して両
側部）に設けられた可動ブロック１０を退避させるのと
同時かそれ以降の所定のタイミングで可動ランナブロッ
ク２８により樹脂路を閉鎖することにより、基板上の封
止樹脂２２をポット１３側へ押し戻して樹脂封止する。
上記樹脂封止方法及び樹脂封止装置によれば、成形品２
３の基板上の成形品ゲートランナ２５が残っても薄ばり
状であるため、ゲートブレイクが不要若しくは極めて簡
略化できる。6 (a) and 6 (b), the upper mold 4
The movable runner block 28 is provided so as to be able to protrude from the resin path extending from the end of the substrate to the gap. The movable runner block 28 is provided so as to protrude into the resin path by being driven by a cylinder or the like (not shown) and close the resin path. The movable runner block 28 retracts the movable block 10 provided on both side surfaces (both sides in the resin filling direction of the underfill portion) of the semiconductor chip 6 shown in FIG. 6C after the underfill molding. At the same time or at a predetermined timing thereafter, the resin path is closed by the movable runner block 28, whereby the sealing resin 22 on the substrate is pushed back to the pot 13 side and sealed with the resin.
According to the resin sealing method and the resin sealing device, the molded product 2
Even if the molded product gate runner 25 on the substrate of No. 3 remains thin, the gate runner 25 does not require a gate break or can be extremely simplified.

【００２１】更に、樹脂封止方法及び樹脂封止装置の他
例について図７〜図９を参照して説明する。尚、図１の
樹脂封止装置と同一部材には、同一番号を付して説明を
援用する。図７（ａ）〜（ｃ）において、モールド金型
３０のうち、上型ブロック３１のキャビティ凹部７には
金型凸部３２が形成されている。この金型凸部３２は、
半導体チップ６を樹脂封止する際に、該半導体チップ６
の周囲の樹脂封止部３７に成形品凹部３４を形成して樹
脂封止するようにしたものである（図９（ａ）〜（ｃ）
参照）。半導体チップ６の上面には樹脂封止後に図示し
ない放熱板が接着される。このとき、樹脂封止部３７に
形成された成形品凹部３４に接着剤が塗布されて放熱板
が貼り合わされる。図８（ａ）（ｂ）にモールド金型３
０の構成を示す。本実施例の場合、図８（ａ）に示すよ
うに、上型３２のキャビティ凹部７には、半導体チップ
６をクランプする金型凹部３３が設けられその周囲に金
型凸部３２が設けられている。この場合、樹脂封止後の
半導体チップ６の露出部分が、成形品凹部３４より例え
ば０．０５ｍｍ程度の高さとなる程度に凹凸部が設計さ
れていれば充分である。また、上型３２には、基板端に
金型ゲートランナ８が接続するように形成されており、
該金型ゲートランナ８のディゲートライン３５は図８
（ｂ）の部分拡大図の破線に示すように基板端部より突
出しないように設計されている。Further, another example of the resin sealing method and the resin sealing device will be described with reference to FIGS. Note that the same members as those of the resin sealing device in FIG. 7A to 7C, a mold projection 32 is formed in the cavity recess 7 of the upper mold block 31 in the mold 30. As shown in FIG. This mold projection 32 is
When the semiconductor chip 6 is sealed with a resin, the semiconductor chip 6
9 (a) to 9 (c), a molded product concave portion 34 is formed in a resin sealing portion 37 around the periphery of the substrate to seal the resin.
reference). A heat sink (not shown) is bonded to the upper surface of the semiconductor chip 6 after resin sealing. At this time, an adhesive is applied to the concave portion 34 of the molded product formed in the resin sealing portion 37, and the heat sink is bonded. FIGS. 8A and 8B show the mold 3.
0 is shown. In the case of the present embodiment, as shown in FIG. 8A, a mold concave portion 33 for clamping the semiconductor chip 6 is provided in the cavity concave portion 7 of the upper die 32, and a mold convex portion 32 is provided therearound. ing. In this case, it is sufficient if the concave and convex portions are designed such that the exposed portion of the semiconductor chip 6 after resin sealing has a height of, for example, about 0.05 mm from the molded product concave portion 34. The upper mold 32 is formed so that the mold gate runner 8 is connected to the end of the substrate.
The degate line 35 of the mold gate runner 8 is shown in FIG.
It is designed so as not to protrude from the end of the substrate as shown by the broken line in the partial enlarged view of FIG.

【００２２】図７のモールド金型３０を用いて樹脂封止
した成形品３６を図９（ａ）〜（ｃ）に示す。図９
（ａ）〜（ｃ）において、成形品ゲート３８には図８
（ｂ）に示すディゲートライン３５に沿ってゲートブレ
イクされた結果、基板端面に対して傾斜したテーパー部
３９が形成されている。FIGS. 9 (a) to 9 (c) show a molded product 36 sealed with a resin using the mold 30 of FIG. FIG.
In FIGS. 8A to 8C, the molded product gate 38 is shown in FIG.
As a result of the gate break along the degate line 35 shown in FIG. 3B, a tapered portion 39 inclined with respect to the substrate end surface is formed.

【００２３】このように、半導体チップ６の上面に図示
しない放熱板を接着するため、半導体チップ６の周囲を
封止する樹脂封止部３７に成形品凹部３４を形成するこ
とにより、放熱板を接着する接着剤層の厚さを樹脂封止
部３７で吸収できるため、パッケージの高さを低く抑え
ることができる。As described above, in order to adhere a heat sink (not shown) to the upper surface of the semiconductor chip 6, the heat sink is formed by forming the molded product concave portion 34 in the resin sealing portion 37 that seals the periphery of the semiconductor chip 6. Since the thickness of the adhesive layer to be bonded can be absorbed by the resin sealing portion 37, the height of the package can be reduced.

【００２４】以上本発明の好適な実施例について種々述
べてきたが、樹脂封止装置及び樹脂封止方法は上述した
各実施例に限定されるのではなく、例えば基板上に形成
される成形品ゲートランナの樹脂厚などは任意に設計で
き、アンダーフィルモールド後にキャビティ凹部に突き
出した可動ブロックを退避させるタイミングなどは任意
である等、発明の精神を逸脱しない範囲で多くの改変を
施し得るのはもちろんである。Various preferred embodiments of the present invention have been described above. However, the resin sealing device and the resin sealing method are not limited to the above-described embodiments. For example, a molded product formed on a substrate may be used. The gate runner resin thickness and the like can be designed arbitrarily, and the timing to retract the movable block protruding into the cavity recess after underfill molding is arbitrary, and many modifications can be made without departing from the spirit of the invention. Of course.

【００２５】[0025]

【発明の効果】本発明に係る、樹脂封止方法及び樹脂封
止装置によれば、従来樹脂封止装置のモールド金型に上
下に使用しているリリースフィルムのうち、上フィルム
のみ使用し下フィルムを省略して既存の樹脂封止方法及
び樹脂封止装置を使用できるため、製造コストやランニ
ングコストを低減できる。また、下フィルムを省略でき
るので、成形品を下型側に載置したまま型開きして取り
出しできるので、取出動作が簡略化できる。また、基板
端の成形品ゲートランナの断面積を絞ったりＶ溝を形成
したりすることで該基板端に応力集中し易く、不要樹脂
のゲートブレイクが小さい応力でしかも定位置で確実に
行える。また、上型の基板端位置に可動ゲートピンを樹
脂路に突き出し可能に設けたり、基板端からキャビティ
凹部に連絡する樹脂路に可動ランナブロックを突き出し
可能に設けた場合には、アンダーフィルモールド後に可
動ゲートピン又は可動ランナブロックにより樹脂路を閉
鎖することにより、基板上の封止樹脂をポット側へ押し
戻して樹脂封止できるので、基板上の成形品ゲートラン
ナの樹脂厚を薄くしたり、薄ばり状にして、ゲートブレ
イクが極めて容易若しくは省略することができる。ま
た、半導体チップの少なくとも各コーナー部を含む上縁
部には面取り部が形成されている場合には、該面取り部
によりリリースフィルムが破れ難くなり、生産性が向上
するうえに、リリースフィルムの過度の伸びが防止でき
るので、該フィルムが膨らまされたときの各コーナー部
によるエッジ痕跡を無くすことができる。また、半導体
チップに放熱板を接着するため、該半導体チップの周囲
を封止する樹脂封止部に凹部を形成する場合には、放熱
板を接着する接着剤層の厚さを樹脂封止部で吸収できる
ため、パッケージの高さを低く抑えることができる。According to the resin sealing method and the resin sealing device according to the present invention, only the upper film is used among the release films used up and down in the mold for the conventional resin sealing device. Since the film can be omitted and the existing resin sealing method and resin sealing device can be used, manufacturing costs and running costs can be reduced. Further, since the lower film can be omitted, the molded product can be opened and taken out with the molded product placed on the lower mold side, so that the taking-out operation can be simplified. Further, by narrowing the cross-sectional area of the molded product gate runner at the end of the substrate or forming a V-groove, stress is easily concentrated on the end of the substrate, and gate breaks of unnecessary resin can be reliably performed at a fixed position with small stress. In addition, when the movable gate pin is provided at the end of the upper substrate so that it can protrude into the resin path, or when the movable runner block is provided so that it can protrude from the end of the substrate to the resin path that communicates with the cavity recess, it is movable after underfill molding By closing the resin path with gate pins or movable runner blocks, the sealing resin on the substrate can be pushed back to the pot side and sealed with the resin, so that the resin thickness of the molded gate runner on the substrate can be reduced or thinned. Thus, the gate break can be extremely easily or omitted. Further, when a chamfered portion is formed at least on the upper edge portion including each corner portion of the semiconductor chip, the chamfered portion makes it difficult for the release film to be torn, and the productivity is improved. Can be prevented, so that the edge trace due to each corner when the film is expanded can be eliminated. When a concave portion is formed in a resin sealing portion for sealing the periphery of the semiconductor chip in order to bond the heat sink to the semiconductor chip, the thickness of the adhesive layer for bonding the heat sink is set to the resin sealing portion. Therefore, the height of the package can be kept low.

【図面の簡単な説明】[Brief description of the drawings]

【図１】樹脂封止装置のモールド金型の模式上視図、矢
印Ａ−Ａ断面図及び樹脂充填完了前後の状態を示す矢印
Ｂ−Ｂ断面図である。FIG. 1 is a schematic top view of a molding die of a resin sealing device, an arrow AA cross-sectional view, and an arrow BB cross-sectional view showing a state before and after completion of resin filling.

【図２】樹脂封止後の成形品の斜視図、上視図及び矢印
Ｃ−Ｃ断面図である。FIG. 2 is a perspective view, a top view, and an arrow CC sectional view of a molded product after resin sealing.

【図３】他例に係る樹脂封止後の成形品の斜視図、上視
図及び矢印Ｃ−Ｃ断面図、矢印Ｄ−Ｄ断面図及び半導体
チップ形状の説明図である。FIG. 3 is a perspective view, a top view, an arrow CC sectional view, an arrow DD sectional view, and an explanatory view of a semiconductor chip shape of a molded product according to another example after resin sealing.

【図４】可動ブロックの形状を示す説明図である。FIG. 4 is an explanatory diagram showing a shape of a movable block.

【図５】他例に示す樹脂封止装置のモールド金型の模式
上視図、矢印Ａ−Ａ断面図及び樹脂充填完了前後の状態
を示す矢印Ｂ−Ｂ断面図である。FIG. 5 is a schematic top view of a molding die of a resin sealing device according to another example, a cross-sectional view taken along a line AA, and a cross-sectional view taken along a line BB showing states before and after completion of resin filling.

【図６】他例に示す樹脂封止装置のモールド金型の模式
上視図、矢印Ａ−Ａ断面図及び樹脂充填完了前後の状態
を示す矢印Ｂ−Ｂ断面図である。FIG. 6 is a schematic top view of a molding die of a resin sealing device according to another example, a cross-sectional view taken along line AA, and a cross-sectional view taken along arrow BB showing states before and after completion of resin filling.

【図７】他例に示す樹脂封止装置のモールド金型の模式
上視図、矢印Ａ−Ａ断面図及び樹脂充填完了前後の状態
を示す矢印Ｂ−Ｂ断面図である。FIG. 7 is a schematic top view of a molding die of a resin sealing device according to another example, a cross-sectional view taken along a line AA, and a cross-sectional view taken along a line BB showing a state before and after completion of resin filling.

【図８】図７のモールド金型の断面説明図及び部分拡大
図である。FIG. 8 is an explanatory cross-sectional view and a partially enlarged view of the mold shown in FIG. 7;

【図９】図７の樹脂封止後の成形品の斜視図、上視図及
び矢印Ｃ−Ｃ断面図である。9 is a perspective view, a top view, and an arrow CC sectional view of the molded product after resin sealing in FIG. 7;

【符号の説明】[Explanation of symbols]

１、３０ モールド金型 ２ 基板 ３ 下型 ４ 上型 ５、３１ 上型ブロック ６ 半導体チップ ６ａ 電極端子 ６ｂ コーナー部 ６ｃ 面取り部 ７ キャビティ凹部 ８ 金型ゲートランナ ９ 金型カル １０ 可動ブロック １１ 基板搭載部 １２ 下型インサートブロック １３ ポット １４ ポットインサート １５ エンドブロック １６ 下型ベースブロック １７ 下型スプリング １８ リリースフィルム １９ 突出ピン ２０ 挿入穴 ２１ 隙間部分 ２２ 封止樹脂 ２３、３６ 成形品 ２４ アンダーフィル部 ２５ 成形品ゲートランナ ２６ Ｖ溝 ２７ 可動ゲートピン ２８ 可動ランナブロック ３２ 金型凸部 ３３ 金型凹部 ３４ 成形品凹部 ３５ ディゲートライン ３７ 樹脂封止部 ３８ 成形品ゲート ３９ テーパー部 Reference Signs List 1, 30 Mold die 2 Substrate 3 Lower die 4 Upper die 5, 31 Upper die block 6 Semiconductor chip 6a Electrode terminal 6b Corner 6c Chamfered portion 7 Cavity recess 8 Die gate runner 9 Die cull 10 Movable block 11 Substrate mounting Part 12 Lower mold insert block 13 Pot 14 Pot insert 15 End block 16 Lower mold base block 17 Lower mold spring 18 Release film 19 Projection pin 20 Insert hole 21 Clearance part 22 Sealing resin 23, 36 Molded product 24 Underfill part 25 Molding Product gate runner 26 V-groove 27 Movable gate pin 28 Movable runner block 32 Mold convex part 33 Mold concave part 34 Mold concave part 35 Degate line 37 Resin sealing part 38 Mold gate 39 Tapered part

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） // Ｂ２９Ｌ 31:34 Ｂ２９Ｌ 31:34 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) // B29L 31:34 B29L 31:34

Claims (12)

【特許請求の範囲】[Claims] 【請求項１】 基板に半導体チップがフリップチップ接
続された被成形品をモールド金型によりクランプし、前
記半導体チップと基板との隙間部分を含むキャビティに
封止樹脂を圧送して樹脂封止する樹脂封止方法におい
て、 前記被成形品をモールド金型内に搬入し、前記半導体チ
ップを収容するキャビティ凹部及び該キャビティ凹部に
連通する樹脂路を含む上型面をリリースフィルムにより
覆って上型及び下型により前記被成形品をクランプし、 前記半導体チップと基板との隙間部分へ優先的に封止樹
脂を圧送りしてアンダーフィルモールドを行い、アンダ
ーフィル部に接続する成形品ゲートランナを基板端位置
で分離することを特徴とする樹脂封止方法。1. A molded product in which a semiconductor chip is flip-chip connected to a substrate is clamped by a mold, and a sealing resin is pressure-fed to a cavity including a gap between the semiconductor chip and the substrate to perform resin sealing. In the resin sealing method, the molded article is carried into a mold, and an upper mold surface including a cavity recess accommodating the semiconductor chip and a resin path communicating with the cavity recess is covered with a release film. The lower mold is used to clamp the molded article, the sealing resin is preferentially fed to the gap between the semiconductor chip and the substrate to perform underfill molding, and the molded product gate runner to be connected to the underfill portion is mounted on the substrate. A resin sealing method comprising separating at an end position. 【請求項２】 前記半導体チップの両側面部で前記上型
に設けられた可動ブロックを予めキャビティ凹部内へ突
出させ前記リリースフィルムを基板上に押接してアンダ
ーフィルモールドを行い、前記可動ブロックを退避させ
て前記半導体チップの両側面部を樹脂封止することを特
徴とする請求項１記載の樹脂封止方法。2. A movable block provided on the upper mold is projected in advance into a cavity concave portion on both side surfaces of the semiconductor chip, and the release film is pressed against a substrate to perform underfill molding, and the movable block is retracted. 2. The resin sealing method according to claim 1, wherein both sides of the semiconductor chip are resin-sealed. 【請求項３】 前記成形品ゲートランナのうち基板端か
らアンダーフィル部に連絡する部位の成形樹脂厚が、前
記基板端よりポット側の成形樹脂厚より薄くなるように
樹脂封止することを特徴とする請求項１記載の樹脂封止
方法。3. The resin sealing is performed such that a molded resin thickness of a portion of the molded product gate runner that communicates from the substrate end to the underfill portion is smaller than a molded resin thickness on the pot side from the substrate end. The resin sealing method according to claim 1, wherein 【請求項４】 前記基板上に残存する成形品ランナの基
板端位置にはＶ溝が形成されて樹脂封止されることを特
徴とする請求項１記載の樹脂封止方法。4. The resin sealing method according to claim 1, wherein a V-groove is formed at a substrate end position of the molded product runner remaining on the substrate and is sealed with a resin. 【請求項５】 前記上型の基板端位置には可動ゲートピ
ンが樹脂路に対して突き出し可能に設けられており、ア
ンダーフィルモールド後に前記可動ゲートピンにより樹
脂路を閉鎖することにより、基板端位置の封止樹脂をポ
ット側へ押し戻して樹脂封止することを特徴とする請求
項１記載の樹脂封止方法。5. A movable gate pin is provided at an upper substrate end position so as to be able to protrude from a resin path, and the resin path is closed by the movable gate pin after underfill molding, so that the substrate end position is reduced. 2. The resin sealing method according to claim 1, wherein the sealing resin is pushed back to the pot side to seal the resin. 【請求項６】 前記上型には基板端よりキャビティ凹部
に連絡する樹脂路へ可動ランナブロックが突き出し可能
に設けられており、アンダーフィルモールド後に前記可
動ランナブロックにより樹脂路を閉鎖することにより、
前記基板上の封止樹脂をポット側へ押し戻して樹脂封止
することを特徴とする請求項１記載の樹脂封止方法。6. A movable runner block is provided on the upper mold so as to protrude from a substrate end to a resin path communicating with a cavity recess, and the resin path is closed by the movable runner block after underfill molding.
2. The resin sealing method according to claim 1, wherein the sealing resin on the substrate is pushed back to the pot side to seal the resin. 【請求項７】 基板に半導体チップがフリップチップ接
続された被成形品をモールド金型によりクランプし、前
記半導体チップと基板との隙間部分を含むキャビティに
封止樹脂を圧送して樹脂封止する樹脂封止装置におい
て、 前記被成形品を載置する下型と、前記半導体チップを収
容するキャビティ凹部、該キャビティ凹部に連通する樹
脂路が形成された上型とを具備した前記モールド金型
と、 前記上型のキャビティ凹部及び該キャビティ凹部に連通
する樹脂路を覆うリリースフィルムとを備え、 前記半導体チップと基板との隙間部分より優先的に封止
樹脂を圧送りしてアンダーフィルモールドを行うと共
に、該アンダーフィル部に接続する成形品ゲートランナ
を基板上に残したまま前記半導体チップを樹脂封止する
ことを特徴とする樹脂封止装置。7. A molded product in which a semiconductor chip is flip-chip connected to a substrate is clamped by a mold, and a sealing resin is pressure-fed to a cavity including a gap between the semiconductor chip and the substrate to perform resin sealing. In the resin sealing device, the molding die including a lower die on which the molded article is placed, a cavity concave portion that accommodates the semiconductor chip, and an upper die formed with a resin path communicating with the cavity concave portion. A release film covering the cavity recess of the upper die and a resin path communicating with the cavity recess, and underfill molding by pressure-feeding the sealing resin preferentially from a gap between the semiconductor chip and the substrate. Resin sealing the semiconductor chip while leaving a molded product gate runner connected to the underfill portion on the substrate. Stop device. 【請求項８】 前記上型には、前記半導体チップの両側
面部に可動ブロックがキャビティ凹部内へ突出可能に設
けられており、該可動ブロックを予めキャビティ凹部内
へ突出させて前記リリースフィルムを基板上に押接して
アンダーフィルモールドを行い、前記可動ブロックを退
避させて前記半導体チップの両側面部を樹脂封止するこ
とを特徴とする請求項７記載の樹脂封止装置。8. The upper die is provided with movable blocks on both side surfaces of the semiconductor chip so as to be able to protrude into the cavity recess. The movable block is previously projected into the cavity recess and the release film is mounted on the substrate. 8. The resin sealing device according to claim 7, wherein the movable block is retracted by pressing the semiconductor chip upward, and the side surfaces of the semiconductor chip are sealed with a resin. 【請求項９】 前記上型に形成された金型ゲートランナ
のうち基板端から前記キャビティ凹部に連絡する部位の
樹脂路断面が、基板端よりポットに連絡する部位の樹脂
路断面より小さく形成されていることを特徴とする請求
項７記載の樹脂封止装置。9. A resin path cross section of a portion of the mold gate runner formed on the upper die, which connects from the substrate end to the cavity recess, is formed smaller than a resin path cross section of a portion connecting from the substrate end to the pot. The resin sealing device according to claim 7, wherein: 【請求項１０】 前記半導体チップの少なくとも各コー
ナー部を含む上縁部には面取り部が形成されていること
を特徴とする請求項７記載の樹脂封止装置。10. The resin sealing device according to claim 7, wherein a chamfered portion is formed at an upper edge portion including at least each corner portion of the semiconductor chip. 【請求項１１】 前記上型の基板端位置には可動ゲート
ピンが樹脂路に対して突き出し可能に設けられており、
アンダーフィルモールド後に前記可動ゲートピンにより
樹脂路を閉鎖することにより、基板端位置の封止樹脂を
ポット側へ押し戻して樹脂封止することを特徴とする請
求項７記載の樹脂封止装置。11. A movable gate pin is provided at an end position of the upper die so as to protrude from a resin path.
8. The resin sealing apparatus according to claim 7, wherein the resin path is closed by the movable gate pin after the underfill molding, whereby the sealing resin at the end of the substrate is pushed back to the pot side to seal the resin. 【請求項１２】 前記上型には基板端よりキャビティ凹
部に連絡する樹脂路へ可動ランナブロックが突き出し可
能に設けられており、アンダーフィルモールド後に前記
可動ランナブロックにより樹脂路を閉鎖することによ
り、前記基板上の封止樹脂をポット側へ押し戻して樹脂
封止することを特徴とする請求項７記載の樹脂封止装
置。12. A movable runner block is provided on the upper mold so as to protrude from a substrate end to a resin path communicating with a cavity recess. By closing the resin path by the movable runner block after underfill molding, 8. The resin sealing device according to claim 7, wherein the sealing resin on the substrate is pushed back to the pot side to seal the resin.
JP2000185328A 2000-06-20 2000-06-20 Method and apparatus for resin sealing Pending JP2002009096A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000185328A JP2002009096A (en) 2000-06-20 2000-06-20 Method and apparatus for resin sealing
US09/884,054 US20020017738A1 (en) 2000-06-20 2001-06-20 Resin sealing method and resin sealing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000185328A JP2002009096A (en) 2000-06-20 2000-06-20 Method and apparatus for resin sealing

Publications (1)

Publication Number Publication Date
JP2002009096A true JP2002009096A (en) 2002-01-11

Family

ID=18685659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000185328A Pending JP2002009096A (en) 2000-06-20 2000-06-20 Method and apparatus for resin sealing

Country Status (2)

Country Link
US (1) US20020017738A1 (en)
JP (1) JP2002009096A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005219297A (en) * 2004-02-04 2005-08-18 Apic Yamada Corp Method and apparatus for molding resin
WO2007060812A1 (en) * 2005-11-22 2007-05-31 Sony Corporation Semiconductor device and method for manufacturing semiconductor device
JP2007335740A (en) * 2006-06-16 2007-12-27 Sony Computer Entertainment Inc Semiconductor device and method for manufacturing the same
US7326379B2 (en) 2002-03-22 2008-02-05 Kao Corporation Apparatus and method for producing soap cake
JP2010109252A (en) * 2008-10-31 2010-05-13 Apic Yamada Corp Transfer molding mold, transfer molding device, resin molding method using the same, and semiconductor device
JP2013123063A (en) * 2013-01-17 2013-06-20 Apic Yamada Corp Transfer molding mold and transfer molding apparatus using the same
JP2014221527A (en) * 2013-05-13 2014-11-27 アピックヤマダ株式会社 Resin mold device and resin molding method
KR20160133468A (en) * 2014-03-17 2016-11-22 아피쿠 야마다 가부시키가이샤 Resin molding method and resin molding die set
JP2019181872A (en) * 2018-04-16 2019-10-24 アピックヤマダ株式会社 Mold tool, resin molding device and resin molding method
JP2020174089A (en) * 2019-04-09 2020-10-22 アサヒ・エンジニアリング株式会社 Resin sealing device and resin sealing method

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4102634B2 (en) * 2002-09-27 2008-06-18 Ｔｏｗａ株式会社 Resin injection device for electronic parts
NL1024248C2 (en) * 2003-09-09 2005-03-10 Fico Bv Method and device for encapsulating electronic components with the aid of a flexible pressure element.
JP4855026B2 (en) * 2005-09-27 2012-01-18 Ｔｏｗａ株式会社 Resin sealing molding method and apparatus for electronic parts
US7898093B1 (en) 2006-11-02 2011-03-01 Amkor Technology, Inc. Exposed die overmolded flip chip package and fabrication method
TW200935527A (en) * 2008-02-15 2009-08-16 Chipmos Technologies Inc Chip package apparatus and chip package process
KR101708272B1 (en) 2009-10-28 2017-02-21 삼성전자주식회사 Apparatus and method of forming semiconductor package
US20120098114A1 (en) * 2010-10-21 2012-04-26 Nokia Corporation Device with mold cap and method thereof
KR20120081809A (en) * 2011-01-12 2012-07-20 삼성엘이디 주식회사 Method of depositing phosphor on semiconductor light emitting device and an apparatus for depositing phosphor on semiconductor light emitting device
US8940587B1 (en) 2012-07-11 2015-01-27 Amkor Technology, Inc. Die seal design and method and apparatus for integrated circuit production
JP6273362B2 (en) * 2013-12-23 2018-01-31 インテル コーポレイション Package on package structure and method for manufacturing the same
NL2013978B1 (en) * 2014-12-15 2016-10-11 Besi Netherlands Bv Device and method for controlled moulding and degating of a carrier with electronic components and moulded product.
US10109547B2 (en) * 2016-01-29 2018-10-23 Taiwan Semiconductor Manufacturing Company, Llc Semiconductor device and method of manufacture
JP6845903B1 (en) * 2019-09-18 2021-03-24 Ｔｏｗａ株式会社 Molding mold, resin molding equipment and manufacturing method of resin molded products
CN118116883B (en) * 2024-04-30 2024-07-16 深圳市科敏传感器有限公司 Sensor packaging structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213937A (en) * 1985-07-12 1987-01-22 Matsushita Electric Ind Co Ltd Air conditioner
JPH02129933A (en) * 1988-11-09 1990-05-18 Mitsubishi Electric Corp Manufacture of ic card module
JPH07212131A (en) * 1994-01-12 1995-08-11 Japan Energy Corp Millimeter wave oscillator
JPH08306719A (en) * 1995-04-27 1996-11-22 Nec Corp Method and apparatus for resin sealing semiconductor device
JPH11274197A (en) * 1998-01-23 1999-10-08 Apic Yamada Corp Method and apparatus for encapsulating semiconductor device with resin
JP2000040775A (en) * 1998-07-23 2000-02-08 Fujitsu Ltd Semiconductor device and manufacture thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69501632T2 (en) * 1994-11-21 1998-07-23 Apic Yamada Corp Resin molding machine with release film
JP3246848B2 (en) * 1995-02-22 2002-01-15 アピックヤマダ株式会社 General-purpose gate position resin molding apparatus and resin molding method
US5817545A (en) * 1996-01-24 1998-10-06 Cornell Research Foundation, Inc. Pressurized underfill encapsulation of integrated circuits
US6048483A (en) * 1996-07-23 2000-04-11 Apic Yamada Corporation Resin sealing method for chip-size packages
US6255142B1 (en) * 1999-10-29 2001-07-03 Nordson Corporation Method for underfilling semiconductor devices
JP3971541B2 (en) * 1999-12-24 2007-09-05 富士通株式会社 Semiconductor device manufacturing method and split mold used in this method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213937A (en) * 1985-07-12 1987-01-22 Matsushita Electric Ind Co Ltd Air conditioner
JPH02129933A (en) * 1988-11-09 1990-05-18 Mitsubishi Electric Corp Manufacture of ic card module
JPH07212131A (en) * 1994-01-12 1995-08-11 Japan Energy Corp Millimeter wave oscillator
JPH08306719A (en) * 1995-04-27 1996-11-22 Nec Corp Method and apparatus for resin sealing semiconductor device
JPH11274197A (en) * 1998-01-23 1999-10-08 Apic Yamada Corp Method and apparatus for encapsulating semiconductor device with resin
JP2000040775A (en) * 1998-07-23 2000-02-08 Fujitsu Ltd Semiconductor device and manufacture thereof

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326379B2 (en) 2002-03-22 2008-02-05 Kao Corporation Apparatus and method for producing soap cake
JP2005219297A (en) * 2004-02-04 2005-08-18 Apic Yamada Corp Method and apparatus for molding resin
JP4827851B2 (en) * 2005-11-22 2011-11-30 ソニー株式会社 Semiconductor device and manufacturing method of semiconductor device
US7880317B2 (en) 2005-11-22 2011-02-01 Sony Corporation Semiconductor device and method of manufacturing semiconductor device
WO2007060812A1 (en) * 2005-11-22 2007-05-31 Sony Corporation Semiconductor device and method for manufacturing semiconductor device
JP2007335740A (en) * 2006-06-16 2007-12-27 Sony Computer Entertainment Inc Semiconductor device and method for manufacturing the same
JP2010109252A (en) * 2008-10-31 2010-05-13 Apic Yamada Corp Transfer molding mold, transfer molding device, resin molding method using the same, and semiconductor device
JP2013123063A (en) * 2013-01-17 2013-06-20 Apic Yamada Corp Transfer molding mold and transfer molding apparatus using the same
JP2014221527A (en) * 2013-05-13 2014-11-27 アピックヤマダ株式会社 Resin mold device and resin molding method
KR20160133468A (en) * 2014-03-17 2016-11-22 아피쿠 야마다 가부시키가이샤 Resin molding method and resin molding die set
KR102203761B1 (en) 2014-03-17 2021-01-18 아피쿠 야마다 가부시키가이샤 Resin molding method and resin molding die set
JP2019181872A (en) * 2018-04-16 2019-10-24 アピックヤマダ株式会社 Mold tool, resin molding device and resin molding method
JP7029342B2 (en) 2018-04-16 2022-03-03 アピックヤマダ株式会社 Mold mold, resin molding device and resin molding method
JP2020174089A (en) * 2019-04-09 2020-10-22 アサヒ・エンジニアリング株式会社 Resin sealing device and resin sealing method

Also Published As

Publication number Publication date
US20020017738A1 (en) 2002-02-14

Similar Documents

Publication Publication Date Title
JP2002009096A (en) Method and apparatus for resin sealing
US7618573B2 (en) Resin sealing method for electronic part and mold used for the method
JP3581814B2 (en) Resin sealing method and resin sealing device
JP2004098364A (en) Method and apparatus for resin seal molding of electronic part
JP2004179284A (en) Method of sealing with resin, method of manufacturing semiconductor device, and resin material
JP2000277551A (en) Resin sealing device and method
JP2001007131A (en) Manufacturing semiconductor device die for manufacturing semiconductor device
JP2006027082A (en) Resin-sealing molding method for semiconductor device
JP2001053094A (en) Resin sealing method and device
JP2004134591A (en) Method for manufacturing semiconductor integrated circuit device
JP2007036273A (en) Method for manufacturing semiconductor integrated circuit device
JP2004230707A (en) Method and apparatus for sealing and molding electronic component with resin
JP5364944B2 (en) Mold
JP4052939B2 (en) Resin sealing molding method and apparatus for electronic parts
JP2002176067A (en) Resin sealing method and resin sealing apparatus
JP4358501B2 (en) Resin sealing molding method for electronic parts and mold
JP3139981B2 (en) Resin sealing method and resin sealing device for chip size package
JP3581816B2 (en) Flip chip resin injection method
JP2002118130A (en) Resin sealing method for matrix package
JP2005085832A (en) Resin molding apparatus
JP2021086866A (en) Manufacturing method of resin-molded lead frame, manufacturing method of resin-molded product, and lead frame
JP2000176967A (en) Resin sealing device
JPH1187433A (en) Semiconductor device and its manufacture
JP5723800B2 (en) Compressed resin sealing molding method and apparatus for semiconductor chip
JP3477488B2 (en) Resin sealing method and resin sealing device

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20040406