TWI228784B - Mold for semiconductor packages - Google Patents
Mold for semiconductor packages Download PDFInfo
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- TWI228784B TWI228784B TW92136047A TW92136047A TWI228784B TW I228784 B TWI228784 B TW I228784B TW 92136047 A TW92136047 A TW 92136047A TW 92136047 A TW92136047 A TW 92136047A TW I228784 B TWI228784 B TW I228784B
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Description
1228784 五、發明說明(1) 【發明所屬之技術領域】 本發明是有關於一種描 體封裝模具。 種_具,且特別是有關於一種半導 【先前技術】 隨著電子技術的日新月異,高技 世。近年來,電子產品邁向輕薄短小 趨勢發展,使得高密声^ 夕力此、同速度之 兩東漸辦 η接&又一兩輸入7輸出之半導體封裝件之 而求漸乓。同樣地,就半導體封裝製, 限的時間中,做出大量且 σ亦追求在有 八里丑同口口質的丰導體封裝件。 面方ΐΐί相=間内提高產量,傳統係將整組模具採平 如::第-1圖:繪示傳統之半導體封裝模具 A Γ ^ /所不,半導體封裝模具1 〇係用以製造 Λ之描模具。半導體之封裝模具10包括上模110 、,♦、蓄1 16。值Μ 、、U更包括具有數個模穴之下表面1 1 2及 '^ ,洗上半導體封裝模具1〇之壓模流程如下:首 先,將配置有數個晶片之基板132置入上模12〇之下表面 由及二二1;0,上表面124之間再使封裝材料從澆道116 裝H ;流入模穴以填充之’最後形成半導體封 裝件 134、136、138。 然而封裝所採用的模具體積很大,若採用傳統之方 將整組模具平面式擴大’則需要使用到相當大的區域。再 者’由於模具面積變大,容易使封裝材料在未流至定位前 即硬化,導致在模流時間内無法完成灌膠,進而使產品良1228784 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a tracing packaging mold. Species, and in particular a semiconductor [Previous technology] With the rapid development of electronic technology, the high-tech world. In recent years, the development of electronic products has become thinner, lighter and shorter, which has led to high-density sounds. At the same speed, the two east and west regions gradually dominated the need for two-input and seven-output semiconductor packages. Similarly, in terms of semiconductor packaging, in a limited time, a large number of and σ is also pursued in high-conductor packages with the same quality.面面 ΐΐίphase = Increase production in time, the traditional system is to flatten the entire set of molds, such as: Figure -1: The traditional semiconductor packaging mold A is shown Γ ^ / No, the semiconductor packaging mold 10 is used to manufacture Λ Of the stencil. The semiconductor package mold 10 includes an upper mold 110, ♦, and 116. The values M, and U further include a plurality of lower surfaces of the cavity 1 1 2 and ^, and the stamping process for washing the semiconductor package mold 10 is as follows: First, the substrate 132 configured with a plurality of wafers is placed in the upper mold 12 〇 The lower surface is made up of 22; 0, and the upper surface 124 makes the packaging material from the runner 116 to be filled with H; it flows into the cavity to be filled, and finally the semiconductor packages 134, 136, 138 are formed. However, the mold used in the package is very large. If the traditional method is used to expand the entire group of molds in a planar manner, a relatively large area needs to be used. Furthermore, as the mold area becomes larger, it is easy for the packaging material to harden before it flows to the positioning, resulting in the failure to complete the potting within the mold flow time, which in turn makes the product good.
TW1292F(日月光).ptd 第10頁 1228784TW1292F (Sun Moonlight) .ptd Page 10 1228784
率降低。 【發明内容】 有鐘於此 體封裝模具, 行灌膠作業, 度,進而增加 ,本發明的目的就是在提供一種立體式半導 具有層疊式設計,不但能讓各層模具同時進 且能有效縮短整體灌膠時間,提高製程穩定 產能及產品良率。 3本::的目:,提出一種立體式半導體封裝模 模之二中間模。中間模配置於上模與-Rate decreases. [Summary of the invention] There is a bell in this body packaging mold, which performs the glue filling operation, and the degree is further increased. The object of the present invention is to provide a three-dimensional semiconductor with a stacked design, which can not only advance the molds of each layer at the same time, but also effectively shorten The overall pouring time improves the stable production capacity and product yield of the process. Three books :: Purpose: To propose a three-dimensional semiconductor package mold, the second intermediate mold. The middle mold is configured on the upper mold and-
ίί:表下模具有上表面,而中_ 组表面與上表面係相對設置」 ,,且口形成第一空腔,用以配置第一半導體封裝件。 ,與下表面相對設置且組合形成第:空腔,用 半導體封裝件。 -置第- 根據本發明的目的,更提出一種立體式半導體 具’包括下模及數個上模。數個上模係層疊式配置於下模 之上。兩兩相鄰之該些上模之間、以及下模與相鄰對應之 上模之間分別組合形成數個空腔,用以配置數個半導^ 裝件。ίί: The lower surface mold has an upper surface, and the middle surface is opposite to the upper surface, and the mouth forms a first cavity for configuring a first semiconductor package. , Opposite to the lower surface and combined to form the first: cavity, using a semiconductor package. -置 第-According to the object of the present invention, a three-dimensional semiconductor device is further provided, which includes a lower mold and a plurality of upper molds. Several upper molds are stacked on the lower mold. A plurality of cavities are respectively formed between the upper molds adjacent to each other, and between the lower mold and the adjacent corresponding upper molds to form a plurality of semiconducting components.
根據本發明的目的,另出一種立體式半導體封裝模 二包括·上模、下模與數個中間模。數個中間模係声疊 式配置於上模與下模之間。下模與其相鄰對應之中間^之 間形成第一空腔,兩兩相鄰之該些中間模之間、及上模與 其相鄰對應之中間模之間分別組合形成數個空腔,用以配According to the object of the present invention, another three-dimensional semiconductor package mold is provided, which includes an upper mold, a lower mold, and a plurality of intermediate molds. Several intermediate modes are acoustically stacked between the upper and lower molds. A first cavity is formed between the lower mold and its adjacent corresponding middle ^, and a plurality of cavities are formed by combining the two adjacent adjacent intermediate molds and between the upper mold and its adjacent corresponding intermediate mold. Match
1228784 五、發明說明(3) 置數個半導體封裝件。 為讓本發明之上述目的、特徵、和優點能更明顯易 懂’下文特舉一較佳實施例,並配合所附圖式,作詳細說 明如下: 【實施方式】1228784 V. Description of the invention (3) Several semiconductor packages are installed. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible ', a preferred embodiment is given below, and in conjunction with the accompanying drawings, the detailed description is as follows: [Embodiment]
凊參照第2〜3圖,其緣示依照本發明第一實施例的立 體式半導體封裝模具之示意圖。立體式半導體封裝模具 2 〇 ’包括:上模21 〇、下模2 2 0及中間模2 3 0。中間模2 3 0係 配置於上模210與下模220之間。如第2圖所示,上模210具 有下表面212,中間模230具有第一表面232及第二表面 234,而下模220具有上表面224。中間模230更具有第一上 模穴238,配置於第一表面232。上模210具有第二上模穴 218,配置於下表面212。中間模23 0之第一表面232與下模 220之上表面224相對設置且組合形成形成第一空腔,用以 配置具晶片之載板,以形成第一半導體封裝件332。中間 模230之第二表面234與上模210之下表面212相對設置且組 合形成第二空腔,用以配置另一具晶片之載板,以形成第 二半導體封裝件312。 封裝模具更可繼續向上擴 。因此可於兩兩相鄰之上 之上模之間分別組合形成 裝件。如第3圖所示,上 ’使得上模21 〇與另一上(2) Referring to FIGS. 2 to 3, a schematic diagram of a solid-state semiconductor package mold according to a first embodiment of the present invention is shown. The three-dimensional semiconductor package mold 2 0 'includes an upper mold 21 0, a lower mold 2 2 0, and an intermediate mold 2 3 0. The middle mold 2 3 0 is disposed between the upper mold 210 and the lower mold 220. As shown in Fig. 2, the upper mold 210 has a lower surface 212, the intermediate mold 230 has a first surface 232 and a second surface 234, and the lower mold 220 has an upper surface 224. The intermediate mold 230 further has a first upper cavity 238 disposed on the first surface 232. The upper mold 210 has a second upper mold cavity 218 and is disposed on the lower surface 212. The first surface 232 of the intermediate mold 230 and the upper surface 224 of the lower mold 220 are oppositely disposed and combined to form a first cavity for configuring a carrier plate with a wafer to form a first semiconductor package 332. The second surface 234 of the intermediate mold 230 is opposite to the lower surface 212 of the upper mold 210 and combined to form a second cavity for configuring another carrier plate with a wafer to form a second semiconductor package 312. Packaging molds can continue to expand upwards. Therefore, the assembly can be formed between two adjacent upper molds. As shown in Fig. 3, the upper ′ makes the upper die 21 〇 and the other upper
第一實施例之立體式半導體 充而具有層疊式配置之數個上模 模之間、以及下模與其相鄰對應 數個空腔,以配置數個半導體封 模210的上方更配置另一上模24〇The three-dimensional semiconductor of the first embodiment has a plurality of cavities in a stacked configuration, and a plurality of cavities corresponding to the lower mold and its adjacent ones. Mod 24〇
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模240之間可再配置設有晶片之基板344。立體式半導體封 裝模具2 0及3 0係用以製造基板式封裝件之模具。因此,第 一半導體封裝件332、第二半導體封裝件312及第三半導體 封裝件342係為基板式封裝件。 立體式半導體封裝模具20之壓模流程如下:首先,將 配置有晶片之數個基板314、334、344同時對應置放在中 間模230、下模220、上模210之上表面。接著,加壓使得 上模2 1 0、中間模2 3 0、另一上模2 4 0之下表面分別與基板 314、334、344密合。再同時將封裝材料從之澆道216、 23 6、246直接流入對應之模穴以填充之,最後形成半導體 封裝件312、332 '342。需說明的是,洗道設置的位置並 限定模穴頂端,亦可如第1圖所示,洗道係位於模穴底 端。 一 請參照第4〜5圖,其繪示依照本發明第二實施例的立 體式半導體封裝模具之示意圖。立體式半導體封裝模具 40,包括:上模410、下模420及中間模430。中間模430係A substrate 344 on which a wafer is disposed may be disposed between the molds 240. The three-dimensional semiconductor packaging molds 20 and 30 are molds for manufacturing substrate-type packages. Therefore, the first semiconductor package 332, the second semiconductor package 312, and the third semiconductor package 342 are substrate-type packages. The stamping process of the three-dimensional semiconductor package mold 20 is as follows: First, a plurality of substrates 314, 334, and 344 on which wafers are arranged are simultaneously placed on the upper surfaces of the intermediate mold 230, the lower mold 220, and the upper mold 210, respectively. Then, the lower surfaces of the upper mold 2 10, the middle mold 2 30, and the other upper mold 2 40 are pressed to the substrates 314, 334, and 344, respectively, by pressing. At the same time, the packaging material is directly flowed from the runners 216, 23 6, 246 into the corresponding cavity to fill it, and finally the semiconductor packages 312, 332'342 are formed. It should be noted that the position of the washing channel is limited to the top of the cavity, as shown in Figure 1, the washing channel is located at the bottom of the cavity. 1 Please refer to FIGS. 4 to 5, which are schematic diagrams of a solid-state semiconductor packaging mold according to a second embodiment of the present invention. The three-dimensional semiconductor package mold 40 includes an upper mold 410, a lower mold 420, and an intermediate mold 430. Intermediate mold 430 series
配置於上模410與下模420之間。如第4圖所示,上模41()具 有下表面412,中間模430具有第一表面432及第二表面… 434,而下模420具有上表面424。中間模430更具有第一上 模八438及第一上模穴439,分別配置於第一表面432及第 二表面434。上模41〇具有第二下模穴418,配置於下表面 412 '下模420更具有第一下模穴429,配置於上表面424。 中間模430之第一表面432與下模42〇之上表面424相對設置 且組合形成形成第一空腔。第一空腔包括第一上模穴43 8It is arranged between the upper mold 410 and the lower mold 420. As shown in Fig. 4, the upper mold 41 () has a lower surface 412, the middle mold 430 has a first surface 432 and a second surface ... 434, and the lower mold 420 has an upper surface 424. The intermediate mold 430 further includes a first upper mold eight 438 and a first upper mold cavity 439, which are respectively disposed on the first surface 432 and the second surface 434. The upper die 41 has a second lower die cavity 418 and is disposed on the lower surface 412 ′. The lower die 420 further has a first lower die cavity 429 and is disposed on the upper surface 424. The first surface 432 of the intermediate mold 430 is opposite to the upper surface 424 of the lower mold 42 and is combined to form a first cavity. The first cavity includes a first upper mold cavity 43 8
12287841228784
五、發明說明(5) 「。下二'腔係用以形成第-半導體封裝 相對設置且組合形成第二空腔。第—* :表面412 Λ: 用以形成第二半導體封裝件512。 間模以擴充之,而具有声Π = 可繼續增加中 μ挺η λ ’層唛式配置之數個中間模,插詈於 、與下模420之間。因此可於兩兩相鄰之中間模之、 間 '上模與相鄰對應上模中 1模之 鄰併雍夕Φ Μ @ > Μ 甲間模之間、以及下模與其相 個半導二彳生二楚分別組合形成數個空腔,以配置數 :圖所示’上模410與中間麵之 = 2:ίί ,使得另一上模44°與中間模之 ν成第二半導體封裝件542。立體式半導體封裝模具 〇及50係用以製造導線架式封裝件之模具。因此,第一半 mu2:第二半導體封裝件512及第三半導體封裝 件542係導線架式封裝件。 立體式半導體封裝模具5〇之壓模流程如下:首先,將 配置有晶片之數個導線架514、534、544同時對應置放在 另一中間模440、下模420、中間模430之上表面。接著, 加壓使得上模410、中間模430、另一中間模44〇之下表面 分別與導線架514、534、544密合。再同時將封裝材料從 之澆道416、436、446直接流入對應之模穴以填充之,最 後形成半導體封裝件512、532、542。 本發明上述實施例所揭露之立體式半導體封裝模具, 具有層疊式結構,利用垂直方向增層的方式可讓多個基板 TW1292F(日月光).ptd 第14頁 1228784 五、發明說明(6) 或導線架同 同時進行灌 於傳統平面 灌膠時間縮 品良率。此 之體積較小 模之上模及 壓模作業。 綜上戶斤 然其並非用 本發明之精 本發明之保 準0 時間載入/載出(l〇a(j/uni〇acj), 膠’製程上較容易控制環境因素等 式封裝模具採用擴大面積的方式, 短’有效縮短模流時間,提高製程 外’立體式半導體封裝模具之垂直 ,中間模可同時作為上模、相鄰中 下模,且僅需一次加壓,即可完成 述’雖然本發明已以一較佳實施例 以限定本發明,任何熟習此技藝者 ,和範圍内,當可作各種之更動與 遵範圍當視後附之申請專利範圍所 mm _ 且各層亦可 條件。相較 且能使整體 穩定度及產 式設計所需 間模、或下 多層模具之 揭露如上, ’在不脫離 潤飾,因此 界定者為 TW1292F(日月光).ptd 第15頁 1228784V. Description of the invention (5) ". The next two 'cavities are used to form the first semiconductor package oppositely arranged and combined to form the second cavity. The first-*: surface 412 Λ: used to form the second semiconductor package 512. The module can be expanded, and it has sound Π = can continue to increase the number of intermediate modes in the medium μ η λ 'layer configuration, inserted between and between the lower mold 420. Therefore, it can be in two adjacent intermediate modes. Zhi, Jian's upper die and the adjacent one of the corresponding upper die and Yongxi Φ Μ @ > Μ between the former die, and the lower die and its semi-conducting two-born two chus are combined to form several Cavity with the number of configurations: 'the upper mold 410 and the middle surface = 2: ί, so that another upper mold 44 ° and the middle mold ν form a second semiconductor package 542. Three-dimensional semiconductor packaging mold 0 and 50 is a mold for manufacturing lead frame packages. Therefore, the first half mu2: the second semiconductor package 512 and the third semiconductor package 542 are lead frame packages. The three-dimensional semiconductor package mold 50 is a stamper. The process is as follows: First, a plurality of lead frames 514, 534, and 544 configured with a chip are simultaneously corresponded. It is placed on the upper surface of the other middle mold 440, the lower mold 420, and the middle mold 430. Then, the lower surface of the upper mold 410, the middle mold 430, and the other middle mold 44 is pressed with the lead frame 514, 534, and 544, respectively At the same time, the packaging material is directly flowed from the runners 416, 436, and 446 into the corresponding mold cavity to fill it, and finally the semiconductor packages 512, 532, and 542 are formed. The three-dimensional semiconductor package disclosed in the above embodiment of the present invention The mold has a layered structure, and multiple substrates TW1292F (sun and moon light) can be used in the vertical direction to increase the number of substrates TW1292F (sun and moon light). Ptd page 14 1228784 V. Description of the invention (6) or the lead frame is simultaneously filled with the traditional plane filling time reduction Product yield. This is a relatively small volume mold and die operation. In summary, it is not used to load / load (10) (j / uni 〇acj), the plastic 'process is easier to control the environmental factors. The packaging mold adopts the method of expanding the area. The short' effectively shortens the mold flow time and improves the verticality of the three-dimensional semiconductor packaging mold outside the process. The intermediate mold can also be used at the same time. Mold, adjacent middle and lower mold, and only need to press once to complete the description 'Although the present invention has been limited to the present invention with a preferred embodiment, anyone skilled in this art, and within the scope, can be used for a variety of The range of changes and compliance should be in accordance with the scope of the attached patent application. And each layer can also be in a condition. Compared with the above, it can make the overall mold and the design of the production model design required, or the disclosure of the next multi-layer mold is as above. Retouched, so the definition is TW1292F (Sun Moonlight) .ptd Page 15 1228784
圖式簡單說明 【圖式簡單說明】 導體 第1圖繪示習知之半導體封裝模具之示意圖。 第2〜3圖繪示依照本發明第一實施例的立體 封裝模具之示意圖。 第4〜5圖繪示依照本發明第二實施例的立體 封裝模具之示意圖。 >千导體 圖式標號說明 I 0 :半導體封裝模具 II 0、21 0、41 〇 ··上模 11 2、21 2 ··下表面 11 6 :澆道 11 8、11 9 ·•通道 120、220、420 :下模 124、224 ·上表面 132、314、334、344 :基板 134、136、138、312、332、342 :基板式半導體封裝 512、532、542 :導線架式半導體封裝件 20、30、40、50 :立體式半導體封裝模具 216、416 :第二澆道 218、418 :第二上模穴 230、430 :中間模 232、432 :第一表面Brief Description of Drawings [Simple Description of Drawings] Conductor Figure 1 shows a schematic diagram of a conventional semiconductor packaging mold. Figures 2 to 3 show the three-dimensional packaging molds according to the first embodiment of the present invention. 4 to 5 are schematic diagrams of a three-dimensional packaging mold according to a second embodiment of the present invention. > Explanation of reference symbols of thousand conductor pattern I 0: Semiconductor package mold II 0, 21 0, 41 〇 · Upper mold 11 2, 21 2 · Lower surface 11 6: Sprue 11 8, 11 9 · Channel 120 , 220, 420: Lower molds 124, 224Upper surfaces 132, 314, 334, 344: Substrates 134, 136, 138, 312, 332, 342: Substrate-type semiconductor packages 512, 532, 542: Lead-frame semiconductor packages 20, 30, 40, 50: three-dimensional semiconductor package molds 216, 416: second runners 218, 418: second upper mold cavity 230, 430: intermediate molds 232, 432: first surface
TW1292F(日月光).Ptd 第16頁 1228784 圖式簡單說明 234、434 :第二表面 236、436 :第一澆道 238、438 :第一上模穴 240 :另一上模 429 :第一下模穴 439 :第二下模穴 440 :另一中間模 514、534、544 :導線架TW1292F (sun and moonlight). Ptd Page 16 1228784 Simple illustration of the drawings 234, 434: second surface 236, 436: first runner 238, 438: first upper die cavity 240: another upper die 429: first lower die Cavity 439: Second lower mold cavity 440: Another middle mold 514, 534, 544: Lead frame
TW1292F(日月光).ptd 第17頁TW1292F (Sun and Moonlight) .ptd Page 17
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TW92136047A TWI228784B (en) | 2003-12-18 | 2003-12-18 | Mold for semiconductor packages |
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TW92136047A TWI228784B (en) | 2003-12-18 | 2003-12-18 | Mold for semiconductor packages |
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