JP2003174124A - Method of forming external electrode of semiconductor device - Google Patents

Method of forming external electrode of semiconductor device

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Publication number
JP2003174124A
JP2003174124A JP2001370598A JP2001370598A JP2003174124A JP 2003174124 A JP2003174124 A JP 2003174124A JP 2001370598 A JP2001370598 A JP 2001370598A JP 2001370598 A JP2001370598 A JP 2001370598A JP 2003174124 A JP2003174124 A JP 2003174124A
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Japan
Prior art keywords
resin
electrodes
semiconductor device
resin sealing
mold
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Pending
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JP2001370598A
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Japanese (ja)
Inventor
Masaru Fukuoka
Yuuki Kuro
大 福岡
勇旗 黒
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Sainekkusu:Kk
株式会社サイネックス
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Priority to JP2001370598A priority Critical patent/JP2003174124A/en
Publication of JP2003174124A publication Critical patent/JP2003174124A/en
Application status is Pending legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of forming external electrodes of a semiconductor device capable of easily forming external electrodes that are exposed on a sealing-resin surface. <P>SOLUTION: Resin material 5 is loaded on the upper face of a lower mold 12 while the object 4 to be molded is arranged between an upper mold 14 and a lower mold 13. After the resin material 5 is heated to be melted, the total of the lower mold 13 is raised to clamp the peripheral part of the object 4 to be molded. By raising the movable lower mold 12 to apply a compressive force to bump electrodes 3 and the melted resin 5, resin molding of the object 4 to be molded is performed while the bump electrodes 3 are squeezed to a specific height. By squeezing the bump electrodes 3 to reduce their height by about 5-50% of the height at their formation, the top-end surfaces of the bump electrodes 3 after the resin molding are surely exposed on the resin surface. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は、半導体装置の外部電極形成方法に関するものであり、特に、ボールグリッドアレイ(以下、BGAと略称する)の作製や三次元実装に有利な外部電極を形成するための方法に関するものである。 BACKGROUND OF THE INVENTION [0001] [Technical Field of the Invention The present invention relates to an external electrode forming method of a semiconductor device, in particular, a ball grid array (hereinafter referred to as BGA) Preparation and tertiary to a method for forming a favorable external electrodes based implementation. 【0002】 【従来の技術】従来、半導体素子を樹脂封止してなる半導体装置の樹脂封止面に外部電極を形成するための各種の方法が提案されている。 [0002] Conventionally, various methods for forming the external electrodes has been proposed a semiconductor device in a resin sealing surface of the semiconductor device formed by resin sealing. 例えば、半導体装置を積層して三次元実装する場合のスルー電極を形成する方法としては、基板上の突起電極全体を半導体素子と共に樹脂封止した後に、突起電極が露出するまで樹脂表面を研削する方法が存在している。 For example, as a method for forming a through electrode in the case of three-dimensional mounting by stacking semiconductor device, the whole projecting electrode on the substrate after resin sealing with a semiconductor device, grinding the resin surface to the protruding electrodes are exposed the method is present. このように形成された半導体装置においては、研削後に露出した突起電極にハンダボールを載置することによりBGAを作製することもできる。 In this semiconductor device which is formed as it can also be made BGA by placing a solder ball protruding electrode exposed after grinding. 【0003】また、図8は、従来方法で作製されたE− [0003] FIG. 8 is made in a conventional manner E-
BGAの一例を示す説明図であり、図9は図8のX矢視図である。 Is an explanatory view showing one example of BGA, Figure 9 is a view on arrow X of FIG. 図8に示すように、多層基板41と、多層基板41に金ワイヤ42で接続された半導体素子43とを枠体44で支持してなる被成形品45は、その半導体素子43が樹脂46によって樹脂封止された後、多層基板41の配線パターン上にハンダボール47が載置されている。 As shown in FIG. 8, the multi-layer substrate 41, the semiconductor element 43 and the molded article 45 obtained by supporting at frame 44 connected by a gold wire 42 to the multilayer substrate 41, the semiconductor element 43 is a resin 46 after being sealed with a resin, a solder ball 47 is placed on the wiring pattern of the multilayer substrate 41. この場合、半導体素子43の樹脂封止の際には、 In this case, when the resin sealing of the semiconductor element 43,
多層基板41の最外層の配線パターンを露出させるためにその内側部分のみを液状樹脂のポッティングによって樹脂封止している。 It is sealed with resin by potting a liquid resin only the inner portion to expose the outermost layer of the wiring pattern of the multilayer substrate 41. また、m−BGAを作製する場合にも、同様に基板の配線パターンを露出させる必要から、 Moreover, the need to also expose the wiring pattern of the substrate as well the case of producing a m-BGA,
ポッティングによる樹脂封止を行っている。 It is performed resin sealing by potting. 【0004】 【発明が解決しようとする課題】しかしながら、以上のような従来の半導体装置の外部電極製造方法には、次のような問題点がある。 [0004] The present invention is, however, the external electrode manufacturing method of the above-described conventional semiconductor device, has the following problems. 【0005】まず、突起電極全体を樹脂封止する方法においては、封止後の樹脂表面全体を均一に研削する工程が必要であり、その分だけ製造効率が低下するという問題がある。 [0005] First, in the method of the entire projection electrode sealed with a resin, it is necessary step for uniformly grind the entire resin surface after sealing, that much production efficiency is lowered. また、樹脂と突起電極という異種材料を同時に研削しなければならないという技術的な問題や、研削時に発生する熱ストレスなどに起因する反りの問題もある。 Further, there is and technical problem of the different materials that resin and the bump electrode must be simultaneously ground, warp problems caused such as heat stress generated during grinding. これらの問題を解決するために突起電極の表面すれすれに樹脂封止しようとしても、突起電極の高さにばらつきがあるため、突起電極が露出しない部分があり、それを例えばレーザなどで除去する必要がある。 If you try surface grazing the resin sealing of the bump electrode in order to solve these problems, because there are variations in height of the bump electrode, there is a portion where the protrusion electrodes are not exposed, necessary to remove it for example laser, etc. there is. 【0006】また、E−BGAやm−BGAを作製する場合には、ポッティング等の樹脂封止を行う関係から、 [0006] In the case of manufacturing the E-BGA or m-BGA is the relationship of performing resin sealing potting,
個々の半導体装置単位での樹脂封止しかできず、複数の半導体装置を一括的に樹脂封止することはできない。 Can only resin sealing of the individual semiconductor device unit, it is impossible to collectively resin-sealing the plurality of semiconductor devices. したがって、多数の半導体装置を製造する場合の製造効率の向上に限界がある。 Therefore, there is a limit to the improvement of production efficiency in the case of producing a large number of semiconductor devices. 【0007】本発明は、以上のような従来技術の問題点を解決するために提案されたものであり、その目的は、 [0007] The present invention has been proposed in order to solve the above described problems of the prior art, and its object is
樹脂封止面から露出する外部電極を容易に形成可能な半導体装置の外部電極形成方法を提供することであり、それによって、BGAの作製や三次元実装における製造効率の向上を実現することである。 Is to provide an external electrode forming method of easily forming a semiconductor device capable of external electrodes exposed from the resin sealing surface, whereby it is possible to achieve an improvement in production efficiency in BGA fabrication and three-dimensional mounting . 【0008】 【課題を解決するための手段】上記の目的を達成するため、本発明の半導体装置の外部電極形成方法は、樹脂封止時に突起電極を押し潰すことにより、突起電極を樹脂表面から確実に露出させるようにしたものである。 [0008] [Means for Solving the Problems] To achieve the above object, the external electrode forming method of a semiconductor device of the present invention, by crushing the projection electrodes during resin sealing, the protruding electrodes from the resin surface it is obtained so as to reliably exposed. 【0009】請求項1の発明は、半導体素子と接続され、外部電極形成用の突起電極を有する基板を樹脂封止してなる半導体装置の外部電極形成方法において、樹脂封止時に、樹脂封止用金型で突起電極を圧縮して押し潰すことにより樹脂封止後に突起電極を樹脂表面から露出させることを特徴としている。 [0009] according to claim 1 the invention is connected to the semiconductor element, the external electrode forming method of a semiconductor device comprising resin encapsulation substrate having a protruding electrode for external electrode formation, during resin sealing, resin sealing It is characterized by causing the protruding electrodes after the resin sealing is exposed from the resin surface by crushing by compressing the protruding electrodes with mold. 【0010】この特徴によれば、樹脂封止時に樹脂封止用金型で突起電極を圧縮して押し潰すことにより、押し潰された突起電極の先端面を樹脂封止用金型に十分に密着させた状態で、この部分に樹脂が付着することなしに樹脂成形を行うことができる。 According to this feature, by crushing a resin sealing mold upon resin sealing by compressing the protruding electrodes, the distal end surface of the crushed projections electrodes sufficiently to the resin sealing mold in a state of close contact, it is possible to perform the resin molding without the resin from adhering to this portion. したがって、樹脂封止後には突起電極の先端面を樹脂表面から確実に露出させることができる。 Therefore, after the resin sealing can be surely exposed the tip surface of the bump electrode from the resin surface. また、樹脂封止時に樹脂封止用金型を利用して突起電極を押し潰すことは、特別な手段を要することもなく容易に実現可能である。 Further, it utilizes a resin sealing mold during resin sealing crushing the projecting electrodes may also not readily feasible require special means. 【0011】請求項2の発明は、請求項1の半導体装置の外部電極形成方法において、樹脂封止時に、樹脂封止用金型の間に突起電極を含む被成形品と樹脂を配置して突起電極および樹脂に圧縮力を加えることにより突起電極を押し潰しながら樹脂成形を行うことを特徴としている。 [0011] The second aspect of the present invention, in the external electrode forming method of a semiconductor device according to claim 1, at the time of resin sealing, between the resin sealing mold by placing the molded article and a resin containing projecting electrodes It is characterized by performing resin molding while crushing the projecting electrodes by applying a compressive force to the protruding electrodes and the resin. この特徴によれば、樹脂の圧縮成形時に樹脂封止用金型によって突起電極を押し潰しながら同時に樹脂成形を行うことができるため、突起電極を押し潰すだけの工程が不要である。 According to this feature, it is possible to simultaneously resin molding while crushing the projecting electrodes by the resin sealing die during compression molding of the resin, only steps crushing the protruding electrode is unnecessary. 【0012】請求項3の発明は、請求項1の半導体装置の外部電極形成方法において、樹脂封止時に、樹脂封止用金型の間に突起電極を含む被成形品を配置して突起電極に圧縮力を加えることにより突起電極を押し潰し、突起電極を押し潰した樹脂封止用金型と被成形品の基板との間に形成されるキャビティ内に樹脂を供給して樹脂成形を行うことを特徴としている。 [0012] A third aspect of the present invention, the external electrode forming method of a semiconductor device according to claim 1, at the time of resin sealing, the projection electrodes by placing the molded article comprising a protruding electrode during the resin sealing mold performing resin molding a resin is supplied into the cavity formed between the protruding electrodes crushing, the substrate of the resin sealing die and the molded article was crushed protruding electrodes by applying a compressive force to it is characterized in that. この特徴によれば、突起電極を押し潰して樹脂封止用金型に確実に密着させた後に樹脂を供給することにより、突起電極の形成時の高さにある程度のばらつきがある場合でも、形成時の高さの低い突起電極の先端面に樹脂が付着することはないため、突起電極形成時の高さの精度を緩和できる。 According to this feature, after it allowed to reliably contact the resin sealing die by crushing the projecting electrodes by supplying a resin, even when the height at the time of forming the protruding electrodes there is some variation, formation since no resin adheres to the front end surface of the lower protruding electrode height of time, it can relax the accuracy of height during projection electrode formed. 【0013】請求項4の発明は、請求項1から3のいずれか1項の半導体装置の外部電極形成方法において、樹脂封止時に、突起電極の高さを形成時の高さの5%以上減少させるように突起電極を押し潰すことを特徴とする。 [0013] A fourth aspect of the present invention, the external electrode forming method of a semiconductor device according to any one of claims 1 to 3, during resin sealing, more than 5% of the height of the formation of the height of the bump electrode wherein the crushing the projection electrode to reduce. この特徴によれば、突起電極を十分に押し潰すことによりその押し潰された先端面を樹脂封止用金型に確実に密着させることができる。 According to this feature, the distal end surface of mashed its press by crushing sufficiently press the protruding electrodes can be securely adhered to the resin sealing die. 【0014】 【発明の実施の形態】以下には、本発明を適用した実施の形態として、樹脂成形時に半導体装置に外部電極を形成する具体的な方法について図面を参照して具体的に説明する。 [0014] The following DETAILED DESCRIPTION OF THE INVENTION, as an embodiment according to the present invention will be described with reference to the drawings specific method for forming the external electrodes on the semiconductor device during the resin molding . 【0015】[第1の実施の形態]図1〜図3は、本発明を適用した第1の実施の形態として、圧縮成形時に突起電極を押し潰す場合の樹脂封止工程の一例を示す図であり、図1は、金型の間に被成形品を配置した状態を示す説明図、図2は被成形品を拡大して示す説明図、図3 [0015] First Embodiment FIGS. 1-3, a first embodiment according to the present invention, an example of a resin sealing step in the case of crushing the projecting electrodes during compression molding Figure , and the FIG. 1 is an explanatory view showing a state of arranging an object to be molded article during the mold 2 is an explanatory view showing an enlarged the molded article, 3
は、図1の状態後に被成形品を圧縮した状態を示す説明図である。 Is an explanatory view showing a compressed state the molded article after the state of FIG. 【0016】図2に示すように、本実施の形態においては、圧縮成形される被成形品として、回路基板1と、この回路基板1上にフリップチップ接続された半導体素子2と、回路基板1上における半導体素子2の周辺に形成された突起電極3とからなる被成形品4が示されている。 [0016] As shown in FIG. 2, in the present embodiment, as the molded article to be compacted, the circuit board 1, and the semiconductor element 2 is flip-chip connected onto the circuit board 1, the circuit board 1 the molded article 4 is shown comprising a protruding electrode 3 formed on the periphery of the semiconductor element 2 on. ここで、突起電極3は、ワイヤボンダで作製された金バンプを半導体素子2より高く積み上げることで形成されている。 Here, the protrusion electrodes 3 are formed by stacking high manufacturing gold bump from the semiconductor element 2 by the wire bonder. 【0017】図1に示すように、本実施の形態においては、このような被成形品4を圧縮成形するための樹脂封止用金型として、枠状の固定下型11とその内部を移動する可動下型12からなる下型13、および上型14からなる金型15を使用する。 As shown in FIG. 1, in this embodiment, as the resin sealing die for compression molding of such the molded article 4, move inside a frame-shaped fixed lower mold 11 lower die 13 made of movable lower mold 12, and using the mold 15 composed of the upper die 14. なお、金型15には、樹脂材料を加熱溶融させるための図示しないヒータが内蔵されている。 Note that the die 15, a heater (not shown) for causing the resin material heating and melting is built. また、下型13は図示していない昇降機構によって上型14に対して昇降するようになっている。 Also, so as to move in the vertical direction with respect to the upper mold 14 by the elevating mechanism lower die 13 are not shown. 本実施の形態においては、この金型15により、次のようにして被成形品4の樹脂封止を行う。 In the present embodiment, this mold 15, sealed with resin of the molded article 4 in the following manner. 【0018】[樹脂封止工程]まず、図1に示すように、上型14と下型13とを対向して配置した状態で、 [0018] [resin sealing step] First, as shown in FIG. 1, in a state of being disposed to face an upper die 14 and lower die 13,
可動下型12の上面に樹脂材料5を載置すると共に、上型14と下型13との間に、被成形品4の半導体素子2 While placing the resin material 5 on the upper surface of the movable lower mold 12, between the upper die 14 and the lower mold 13, of the molded article 4 semiconductor element 2
や突起電極3の配置された中央部分が可動下型12上に位置し、かつ、被成形品4の周縁部が固定下型11上に位置するように被成形品4を配置する。 And located placed central portion of the protrusion electrode 3 on the movable lower mold 12, and, placing the molded article 4 as the peripheral portion of the molded article 4 is positioned on the fixed lower die 11. この状態で、金型15に内蔵した図示しないヒータにより樹脂材料5を加熱し溶融状態にする。 In this state, by a heater (not shown) incorporated in the mold 15 to heat the resin material 5 is in a molten state. 【0019】続いて、図示しない昇降機構により、固定下型11および可動下型12を上昇させて、固定下型1 [0019] Then, the elevating mechanism (not shown), raises the fixed lower die 11 and movable lower die 12, fixed lower die 1
1の上面と上型14の下面とで被成形品4の周縁部をクランプする。 Clamping the periphery of the molded article 4 in the first upper and lower surfaces of the upper die 14. この状態で、図3に示すように、可動下型12のみをさらに上昇させて突起電極3および溶融した樹脂材料5に圧縮力を加える。 In this state, as shown in FIG. 3, apply a compressive force to the protrusion electrode 3 and the molten resin material 5 is further increased only movable lower die 12. これにより、突起電極3 Thus, the protrusion electrode 3
を所定の高さまで押し潰しながら、これと並行して、被成形品4の回路基板1と固定下型11および可動下型1 While crushed to a predetermined height, parallel to this, the circuit board 1 and the stationary lower die 11 and movable lower die 1 of the molded article 4
2によって形成されるキャビティ内に溶融した樹脂材料5を充満させて樹脂成形を行う。 2 is filled with the resin material 5 which is melted in the cavity formed by performing resin molding. この場合、突起電極3 In this case, the protruding electrodes 3
の形成時における高さの5〜50%程度減少させるようにして突起電極3を押し潰す。 Way to reduce 5 to 50% of the height crushing the protrusion electrodes 3 during the formation. なお、回路基板1の表面からの高さを考えた場合、突起電極3の形成時における高さA、半導体素子2の高さB、押し潰した後(樹脂封止後)の突起電極3の高さC、の関係は、A>C≧B、 Incidentally, when considering the height from the surface of the circuit board 1, the height A at the time of formation of the bump electrode 3, the height B of the semiconductor element 2, after crushing the protruding electrodes 3 (after resin sealing) the height C, the relationship, a> C ≧ B,
となる。 To become. 【0020】[作用効果]以上のような樹脂封止工程で外部電極形成を行った場合の作用効果について、次に説明する。 The operation and effect of the case of performing the external electrodes formed at Advantageous Effects] as described above resin sealing step, described below. 【0021】まず、樹脂封止工程時に樹脂封止用の金型15で突起電極3を圧縮して押し潰すことにより、押し潰された突起電極3の先端面を金型15に十分に密着させた状態で、この部分に樹脂が付着することなしに樹脂成形を行うことができる。 Firstly, by crushing by compressing the protruding electrodes 3 in the mold 15 for resin sealing during resin sealing step, is sufficiently close contact with the distal end surface of the protrusion electrode 3 crushed mold 15 in the state, it is possible to perform the resin molding without the resin from adhering to this portion. 特に、突起電極3の形成時における高さの5〜50%程度減少させるようにして突起電極3を十分に押し潰すことによりその押し潰された先端面を樹脂封止用金型に確実に密着させることができる。 In particular, reliably contact the crushed tip surface resin sealing die by as decrease of about 5-50% of the height at the time of formation of the bump electrode 3 crushed sufficiently press the protruding electrodes 3 it can be. 【0022】したがって、樹脂封止後には突起電極3の先端面を樹脂表面から確実に露出させることができる。 [0022] Thus, after the resin sealing can be surely exposed the tip surface of the bump electrode 3 from the resin surface.
例えば、直径70μmで高さが50μmの金バンプを3 For example, height diameter 70μm are gold bumps of 50 [mu] m 3
段積み上げて高さが150μmの突起電極3を形成し、 Height stacked stages to form a protrusion electrode 3 of 150 [mu] m,
この突起電極3を樹脂封止時に高さが100μmとなるまで押し潰した場合には、積み上げられた金バンプが潰れ、樹脂表面には直径100μm程度の金バンプすなわち突起電極3の先端面が露出する。 If this height protruding electrodes 3 during resin sealing crushed until 100μm is crushed piled up gold bumps, on the resin surface is exposed distal end surface of the gold bump or projection electrodes 3 having a diameter of about 100μm to. 【0023】このように、樹脂封止時に使用する金型をそのまま利用して突起電極を押し潰すことは、特別な手段を要することもなく容易に実現可能であり、この方法により、突起電極3の先端面を樹脂表面から確実に露出させることができる。 [0023] Thus, it utilizes a mold used when the resin sealing as crushing the projection electrodes it is also not readily achievable requiring special measures, by this method, the protruding electrodes 3 the distal end surface can be reliably exposed from the resin surface. したがって、突起電極を樹脂中に埋没させて樹脂封止する従来技術に比べて、半導体素子の表面全体を均一に研削する必要がない分だけ半導体装置の製造効率を向上することができる。 Therefore, the protruding electrodes as compared with the prior art resin sealing by buried in the resin, it is possible to only increase the manufacturing efficiency of the semiconductor device divided need not be uniformly ground the entire surface of the semiconductor element. 【0024】さらに、本実施の形態に係る方法によれば、樹脂の圧縮成形時に樹脂封止用の金型によって突起電極を押し潰しながら同時に樹脂成形を行うことができるため、突起電極を押し潰すだけの工程が不要である。 Furthermore, the method according to the present embodiment, it is possible to simultaneously resin molding while crushing the projecting electrodes by a mold for resin sealing during compression molding of the resin, crushing the projecting electrodes only of the process is not required.
さらにまた、本発明とは異なり、突起電極すれすれに樹脂封止する場合には突起電極のばらつきを抑えないと樹脂が突起電極表面に被ってしまうが、本発明のように突起電極を確実に押し潰す方法では、突起電極の形成時の高さに多少のばらつきがある場合でも、最も高い突起電極から順次押し潰す形で均一化することができる。 Furthermore, unlike the present invention, when in the case of resin sealing skimmed protruding electrodes is not suppressed variation of the bump electrode is resin will suffer the protruding electrode surface, reliably press the protrusion electrodes as in the present invention the crushing method, even when the height at the time of forming the protruding electrodes there is some variation, can be homogenized in a sequential pressing crushed form from the highest protrusion electrodes. したがって、突起電極形成時の高さの精度を緩和することができる。 Therefore, it is possible to relax the accuracy of height during projection electrode formed. 【0025】また、本実施の形態に係る方法によって突起電極を樹脂表面から露出させた半導体装置は、BGA Further, the semiconductor device to expose the protruding electrodes from the resin surface by the method according to the present embodiment, BGA
の作製や三次元実装における製造効率の向上に有用である。 Preparation and useful in improving the manufacturing efficiency in three-dimensional mounting. すなわち、樹脂表面に露出した突起電極3にハンダボールを載置することにより、BGAを容易に作製することができる。 In other words, by placing the solder balls to the protruding electrodes 3 exposed to the resin surface, it is possible to easily prepare a BGA. また、本実施の形態に係る方法で作製された半導体装置の樹脂表面から露出する突起電極は、三次元実装用のスルー電極としても利用可能である。 Further, the protruding electrodes exposed from the resin surface of the semiconductor device manufactured by the method according to the present embodiment can also be utilized as a through electrode for three-dimensional mounting. 【0026】さらに、従来技術ではポッティング等による個々の半導体装置単位での樹脂封止しかできなかったE−BGAやm−BGAを、多数の半導体装置用である大判の被成形品を作製、樹脂封止した後に分離する、等の方法で一括的に効率よく製造可能となる。 Furthermore, the E-BGA or m-BGA which could only resin sealing of the individual semiconductor device unit according to potting in the prior art, produce a large format of the molded article is for a number of semiconductor device, the resin separated after sealing, collectively becomes efficiently be produced by the method and the like. 図4は、本実施の形態に係る方法で作製されたE−BGAの一例を示す説明図である。 Figure 4 is an explanatory diagram showing an example of the produced E-BGA by the method according to the present embodiment. 【0027】この図4に示すように、多層基板21と、 As shown in FIG. 4, the multilayer substrate 21,
多層基板21に金ワイヤ22で接続された複数の半導体素子23と、それらを支持する枠体24、多層基板21 Frame 24 supporting a plurality of semiconductor elements 23 that are connected by a gold wire 22 to the multilayer substrate 21, their multilayer substrate 21
の最外層に載置された金バンプ(突起電極)25からなる、複数の半導体装置用である大判の被成形品26の全面が、金バンプ25を押し潰して露出させるようにして樹脂27によって樹脂封止されている。 Of consisting placed gold bump (protruding electrode) 25 on the outermost layer, the entire surface of the large format of the molded article 26 is for a plurality of semiconductor devices, a resin 27 so as to expose crushed gold bumps 25 It is sealed with resin. 樹脂封止後の成形品は、パッケージダイシングライン28によって分離され、個々のE−BGAが作製される。 Molded article after the resin sealing are separated by the package dicing line 28, the individual E-BGA is produced. 【0028】この場合、一括的な樹脂封止により、複数の半導体装置について、半導体素子23だけでなく多層基板21の配線パターンも全て樹脂でカバーされ、金バンプ25のみを露出させることができるため、ポッティングにより個々の半導体装置の半導体素子を樹脂封止していた従来技術に比べて格段に製造効率が高くなっている。 [0028] In this case, by collectively resin sealing, the plurality of semiconductor devices, the wiring pattern of the multilayer substrate 21 as well as the semiconductor element 23 is also covered by all resin, it is possible to expose only the gold bumps 25 is higher is much production efficiency of semiconductor devices of each of the semiconductor device as compared with the resin-sealed have the prior art by potting. また、図8に示すような従来のE−BGAでは、多層基板にハンダボールを載置するための配線パターンを出すためにレジストを塗る必要があったが、金バンプ2 Further, in the conventional E-BGA shown in FIG. 8, it was necessary to coat the resist in order to produce a wiring pattern for placing solder balls in the multilayer substrate, the gold bumps 2
5だけを露出させた図4のE−BGAにおいては、表面の樹脂がレジストの代わりとなるため、レジストを塗る必要もない。 In 5 only E-BGA of FIG. 4 to expose, the resin surface becomes the place of the resist, there is no need to paint the resist. 【0029】[第2の実施の形態]図5〜図7は、本発明を適用した第2の実施の形態として、突起電極を押し潰した後にトランスファ成形を行う場合の樹脂封止工程の一例を示す説明図であり、図5は、金型の間に被成形品を配置した状態、図6は、被成形品を圧縮した状態、 [0029] Second Embodiment FIGS. 5-7, a second embodiment according to the present invention, an example of a resin sealing step of performing a transfer molding after crushed projection electrodes is an explanatory view showing a state 5, state arranged to be molded article during the mold 6 is obtained by compressing the molded article,
図7は、トランスファ成形を行った状態、をそれぞれ示している。 Figure 7 shows a state of performing a transfer molding, respectively. 【0030】本実施の形態において樹脂封止される被成形品は、前述した第1の実施の形態と同様の、回路基板1、半導体素子2、突起電極3からなる被成形品4であり、突起電極3は金バンプから形成されている。 [0030] the molded article in the present embodiment are sealed with the resin is the same as in the first embodiment described above, the circuit board 1, the semiconductor element 2 is to be molded article 4 comprising a protrusion electrode 3, protruding electrodes 3 are formed of gold bumps. そして、図5に示すように、本実施の形態においては、このような被成形品4をトランスファ成形するための樹脂封止用金型として、下型31と上型32からなる金型33 Then, as shown in FIG. 5, in the present embodiment, such the molded article 4 as a resin sealing die for transfer molding, mold made of the lower die 31 and upper die 32 33
を使用する。 To use. 金型33に、樹脂材料を加熱溶融させるための図示しないヒータが内蔵されている点は第1の実施の形態における金型15と同様である。 The mold 33, that a heater (not shown) for causing the resin material heating and melting are incorporated is similar to the mold 15 in the first embodiment. また、本実施の形態に係る金型33は、上型32が図示していない昇降機構によって下型31に対して昇降するようになっている。 Further, the mold 33 according to this embodiment is raised and lowered relative to the lower mold 31 by the elevating mechanism the upper die 32 is not shown. 【0031】また、下型31には、樹脂投入用のポット31aが形成され、このポット31aに樹脂加圧用のプランジャ34が挿入されている。 Further, the lower mold 31, the pot 31a of resin introduced is formed, the plunger 34 of the resin pressurizing is inserted into the pot 31a. 一方、上型32には、 On the other hand, the upper mold 32,
樹脂成形用のキャビティ32aと、このキャビティ32 The cavity 32a of the resin molding, the cavity 32
a内に樹脂を流入させるためのランナ32bおよびゲート32cが形成されている。 Runner 32b and the gate 32c for introducing the resin is formed into a. 本実施の形態においては、 In this embodiment,
この金型33により、次のようにして被成形品4の樹脂封止を行う。 The mold 33, sealed with resin of the molded article 4 in the following manner. 【0032】[樹脂封止工程]まず、図1に示すように、上型32と下型31とを対向して配置した状態で、 [0032] [resin sealing step] First, as shown in FIG. 1, in a state of being disposed to face the upper mold 32 and lower mold 31,
下型31のポット31a内にタブレット状の樹脂材料5 Resin material tablet shaped into the pot 31a of the lower die 31 5
を投入すると共に、下型31の上面に、被成形品4の半導体素子2や突起電極3の配置された中央部分が上型3 While introducing, on the upper surface of the lower mold 31, upper mold 3 is arranged a central portion of the semiconductor element 2 and the protrusion electrode 3 of the molded article 4
2のキャビティ32aに対向するように被成形品4を配置する。 So as to face the second cavity 32a to place the molded article 4. 【0033】続いて、図6に示すように、図示しない昇降機構により、上型32を下降させて、この上型32の下面と下型31の上面とで被成形品4の周縁部をクランプすることにより、突起電極3に圧縮力を加えて所定の高さまで押し潰す。 [0033] Subsequently, as shown in FIG. 6, the elevating mechanism (not shown), lowers the upper mold 32, clamping the periphery of the molded article 4 in the lower surface of the upper mold 32 and the upper surface of the lower mold 31 by, crushed to a predetermined height by applying a compressive force to the protruding electrodes 3. すなわち、第1の実施の形態と同様に、突起電極3の形成時における高さの5〜50%程度減少させるようにして突起電極3を押し潰す。 That is, like the first embodiment, crushing the protrusion electrodes 3 so as to reduce 5 to 50% of the height at the time of formation of the bump electrode 3. 【0034】この後、図7に示すように、下型31のポット31aに投入されたタブレット状の樹脂材料5を、 [0034] Thereafter, as shown in FIG. 7, the tablet form of the resin material 5 is put into the pot 31a of the lower die 31,
金型33に内蔵した図示しないヒータによる加熱で溶融しながら、プランジャ34の圧力により、ポット31a While melted by heating with a heater (not shown) incorporated in the mold 33, the pressure of the plunger 34, the pot 31a
からランナ32bおよびゲート32cを介してキャビティ32a内に流し込み、樹脂成形を行う。 From through runners 32b and the gate 32c poured into the cavity 32a, performs resin molding. 【0035】[作用効果]以上のような樹脂封止工程で外部電極形成を行った場合の作用効果について、次に説明する。 The operation and effect of the case of performing the external electrodes formed at Advantageous Effects] as described above resin sealing step, described below. 【0036】まず、樹脂封止工程時に樹脂封止用の金型33で突起電極3を圧縮して押し潰すことにより、押し潰された突起電極3の先端面を金型33に十分に密着させた状態で、この部分に樹脂が付着することなしに樹脂成形を行うことができるため、第1の実施の形態と同様に、樹脂封止後には突起電極3の先端面を樹脂表面から確実に露出させることができ、半導体装置の製造効率を向上することができる。 Firstly, by crushing by compressing the protruding electrodes 3 in the mold 33 for resin sealing during resin sealing step, is sufficiently close contact with the distal end surface of the protrusion electrode 3 crushed mold 33 in state, it is possible to perform the resin molding without the resin adheres to this portion, as in the first embodiment, after the resin sealing reliably tip surface of the bump electrode 3 from the resin surface can be exposed, it is possible to improve the manufacturing efficiency of the semiconductor device. そして、この方法によって得られた半導体装置もまた、第1の実施の形態に係る方法で得られた半導体装置と同様に、BGAの作製や三次元実装における製造効率の向上に有用である。 The semiconductor device obtained by this method is also similar to the semiconductor device obtained by the method according to the first embodiment, it is useful in improving the production efficiency of BGA fabrication and three-dimensional mounting. 【0037】以上のような作用効果に加えて、本実施の形態に係る方法は、高さに拘わらず全ての突起電極を十分に押し潰して金型に密着させた後に樹脂を供給することから、突起電極の形成時の高さにかなりのばらつきがある場合でも、高い突起電極を押し潰している間に低い突起電極の先端面と金型との間に樹脂が入り込む等の不都合を確実に防止することができる。 In addition to the above-described advantageous effects, the method according to the present embodiment, since the supply of the resin after in close contact with the mold crushes fully pushed all the projection electrodes regardless of the height , even if the height of the formation of the protruding electrodes there is considerable variation, the inconvenience such as the resin enters securely between the front end surface and the mold of the projection electrodes and the low while crushing high projecting electrode it is possible to prevent. したがって、突起電極の形成時の高さにかなりのばらつきがある場合でも、全ての突起電極を樹脂表面から確実に露出させることができるため、突起電極形成時の高さの精度をより一層緩和できるという効果が得られる。 Therefore, even if the height of the formation of the protruding electrodes there is considerable variation, it is possible to reliably expose the entire protruding electrode from the resin surface, it can be further relax the accuracy of height during projection electrode formed the effect is obtained that. 【0038】[他の実施の形態]なお、本発明は、上記のような実施の形態に限定されるものではなく、他にも多種多様な形態が実施可能である。 [0038] [Other Embodiments] The present invention is not limited to the embodiment as described above, a wide variety of forms in other are feasible. 例えば、次のような形態を包含するものである。 For example, it is intended to cover the following form. 【0039】まず、前記実施の形態においては、上型と下型の一方を昇降させて樹脂封止を行う場合について説明したが、他方の型を昇降させるか、あるいは、上下両型を反対方向に昇降させた場合でも同様の効果を得ることができる。 Firstly, in the embodiments has described the case of performing the resin encapsulation by lifting one of the upper and lower molds, either by lifting the other type, or the opposite direction the upper and lower dies it is possible to obtain the same effect even when moved up and down on. すなわち、本発明においては、樹脂封止用の金型によって突起電極を押し潰す限り、使用する金型本体の具体的な構成は適宜選択可能である。 That is, in the present invention, so long as crushing the projecting electrodes by a mold for resin sealing, the specific structure of the mold body to be used can be appropriately selected. 【0040】また、前記実施の形態においては、突起電極を金バンプの積み重ねによって形成した場合について説明したが、突起電極の形成方法は自由に選択可能であり、例えば、ハンダボールやスタッド棒等によって突起電極を形成することも可能である。 Further, in the above embodiment has described the case where the protrusion electrodes were formed by stacking a gold bump, a method of forming the protruding electrodes is freely selectable, for example, by solder balls or stud bars etc. it is also possible to form the protrusion electrode. 【0041】 【発明の効果】以上説明したように、本発明によれば、 [0041] As has been described in the foregoing, according to the present invention,
樹脂封止時に突起電極を押し潰すことにより、突起電極を樹脂表面から確実に露出させることができるため、樹脂封止面から露出する外部電極を容易に形成可能な半導体装置の外部電極形成方法を提供することができる。 By the time of resin sealing crushing the protruding electrode, it is possible to reliably expose the protruding electrodes from the resin surface, the external electrode forming method of easily forming a semiconductor device capable of external electrodes exposed from the resin sealing surface it is possible to provide. その結果、BGAの作製や三次元実装における製造効率の向上を実現することができる。 As a result, it is possible to achieve an improvement in production efficiency in BGA fabrication and three-dimensional mounting.

【図面の簡単な説明】 【図1】本発明を適用した第1の実施の形態として、圧縮成形時に突起電極を押し潰す場合の樹脂封止工程の一例を示す図であり、金型の間に被成形品を配置した状態を示す説明図である。 As a first embodiment according to the BRIEF DESCRIPTION OF THE DRAWINGS [Figure 1] The present invention is a diagram showing an example of a resin sealing step in the case of crushing the projecting electrodes during compression molding, during the mold it is an explanatory view showing a state of arranging an object to be molded article. 【図2】図1に示す被成形品を拡大して示す説明図である。 FIG. 2 is an explanatory view showing an enlarged the molded product shown in FIG. 【図3】図1に示す状態後に被成形品を圧縮した状態を示す説明図である。 3 is an explanatory view showing a compressed state the molded article after the state shown in FIG. 【図4】図1に示す樹脂封止工程で作製されたE−BG [4] made of a resin sealing step shown in FIG. 1 E-BG
Aの一例を示す説明図である。 Is an explanatory diagram showing an example of A. 【図5】本発明を適用した第2の実施の形態として、突起電極を押し潰した後にトランスファ成形を行う場合の樹脂封止工程の一例を示す図であり、金型の間に被成形品を配置した状態を示す説明図である。 As a second embodiment according to the FIG. 5 present invention is a diagram showing an example of a resin sealing step of performing a transfer molding after crushed protruding electrodes, the molded article during the mold is an explanatory view showing an arrangement state of. 【図6】図5に示す状態後に被成形品を圧縮した状態を示す説明図である。 6 is an explanatory view showing a compressed state the molded article after the state shown in FIG. 【図7】図6に示す状態後にトランスファ成形を行った状態を示す説明図である。 7 is an explanatory view showing a state of performing a transfer molding after the state shown in FIG. 【図8】従来方法で作製されたE−BGAの一例を示す説明図である。 8 is an explanatory diagram showing an example of the produced E-BGA in a conventional manner. 【図9】図8のX矢視図である。 Is an X-arrow view of FIG. 8; 【符号の説明】 1…回路基板2…半導体素子3…突起電極4…成形品5…樹脂材料11…固定下型12…可動下型13…下型14…上型15…金型21…多層基板22…金ワイヤ23…半導体素子24…枠体25…被成形品26…金バンプ27…樹脂28…パッケージダイシングライン31…金型31a…ポット32…下型32a…キャビティ32b…ランナ32c…ゲート33…上型34…プランジャ [Description of Reference Numerals] 1 ... circuit board 2 ... semiconductor elements 3 projecting electrodes 4 ... moldings 5 ​​... resin material 11 ... fixed bottom die 12 ... movable lower mold 13 ... lower mold 14 ... upper die 15 ... die 21 ... multilayer substrate 22 ... gold wire 23 ... semiconductor device 24 ... frame 25 ... the molded article 26 ... gold bump 27 ... resin 28 ... package dicing lines 31 ... die 31a ... pot 32 ... lower mold 32a ... cavity 32 b ... runner 32c ... gate 33 ... upper mold 34 ... plunger

Claims (1)

  1. 【特許請求の範囲】 【請求項1】 半導体素子と接続され、外部電極形成用の突起電極を有する基板を樹脂封止してなる半導体装置の外部電極形成方法において、 前記樹脂封止時に、樹脂封止用金型で前記突起電極を圧縮して押し潰すことにより樹脂封止後に突起電極を樹脂表面から露出させる、ことを特徴とする半導体装置の外部電極形成方法。 [Claims 1] is connected to the semiconductor element, the external electrode forming method of a semiconductor device comprising resin encapsulation substrate having a protruding electrode for external electrode formation, during the resin sealing, resin protruding electrodes after the resin sealing is exposed from the resin surface by squeezing and compressing the protruding electrodes with a sealing mold, the external electrode forming method of a semiconductor device, characterized in that. 【請求項2】 前記樹脂封止時に、 前記樹脂封止用金型の間に前記突起電極を含む被成形品と樹脂を配置して突起電極および樹脂に圧縮力を加えることにより突起電極を押し潰しながら樹脂成形を行う、 To wherein during said resin sealing, press bump electrodes by applying a compressive force to the protruding electrodes and the resin by placing the molded product and the resin containing the projecting electrodes during the resin sealing mold performing a resin molding while crushing,
    ことを特徴とする請求項1に記載の半導体装置の外部電極形成方法。 External electrode forming method of a semiconductor device according to claim 1, characterized in that. 【請求項3】 前記樹脂封止時に、 前記樹脂封止用金型の間に前記突起電極を含む被成形品を配置して突起電極に圧縮力を加えることにより突起電極を押し潰し、 前記突起電極を押し潰した前記樹脂封止用金型と前記被成形品の前記基板との間に形成されるキャビティ内に樹脂を供給して樹脂成形を行う、ことを特徴とする請求項1に記載の半導体装置の外部電極形成方法。 When wherein the resin sealing, crushed protruding electrodes by applying a compressive force to the projecting electrodes by placing the molded article comprising the projection electrodes during the resin sealing die, the projections according to claim 1, wherein said resin sealing die crushed electrodes by supplying a resin into the cavity formed between the substrate of the molded article performing resin molding, characterized in that external electrode forming method of a semiconductor device. 【請求項4】 前記樹脂封止時に、前記突起電極の高さを形成時の高さの5%以上減少させるように突起電極を押し潰すことを特徴とする請求項1から3のいずれか1 When wherein said resin sealing, any one of claims 1 to 3, characterized in that crushing the protruding electrodes so as to decrease more than 5% of the height of the formation of the height of the projecting electrodes 1
    項に記載の半導体装置の外部電極形成方法。 External electrode forming method of a semiconductor device according to claim.
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