JP2702807B2 - 半導体中の深い不純物準位の測定方法及びその装置 - Google Patents
半導体中の深い不純物準位の測定方法及びその装置Info
- Publication number
- JP2702807B2 JP2702807B2 JP2211122A JP21112290A JP2702807B2 JP 2702807 B2 JP2702807 B2 JP 2702807B2 JP 2211122 A JP2211122 A JP 2211122A JP 21112290 A JP21112290 A JP 21112290A JP 2702807 B2 JP2702807 B2 JP 2702807B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- semiconductor
- signal
- impurity level
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 54
- 239000012535 impurity Substances 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000000523 sample Substances 0.000 claims description 43
- 238000012545 processing Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 10
- 238000004364 calculation method Methods 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 230000002123 temporal effect Effects 0.000 claims description 3
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 claims 2
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 claims 2
- 238000001773 deep-level transient spectroscopy Methods 0.000 claims 2
- 239000000284 extract Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2211122A JP2702807B2 (ja) | 1990-08-09 | 1990-08-09 | 半導体中の深い不純物準位の測定方法及びその装置 |
| US07/612,926 US5047713A (en) | 1990-08-09 | 1990-11-14 | Method and apparatus for measuring a deep impurity level of a semiconductor crystal |
| EP91304408A EP0470692A2 (en) | 1990-08-09 | 1991-05-16 | Method and apparatus for measuring a deep inpurity level of a semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2211122A JP2702807B2 (ja) | 1990-08-09 | 1990-08-09 | 半導体中の深い不純物準位の測定方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0493043A JPH0493043A (ja) | 1992-03-25 |
| JP2702807B2 true JP2702807B2 (ja) | 1998-01-26 |
Family
ID=16600762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2211122A Expired - Lifetime JP2702807B2 (ja) | 1990-08-09 | 1990-08-09 | 半導体中の深い不純物準位の測定方法及びその装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5047713A (OSRAM) |
| EP (1) | EP0470692A2 (OSRAM) |
| JP (1) | JP2702807B2 (OSRAM) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5646540A (en) * | 1989-04-19 | 1997-07-08 | Interuniversitair Micro-Elektronic Centrum Vzw | Apparatus and method for measuring electromagnetic ageing parameter of a circuit element and predicting its values |
| US5406214A (en) * | 1990-12-17 | 1995-04-11 | Semilab Felvezeto Fizikai Lab, Rt | Method and apparatus for measuring minority carrier lifetime in semiconductor materials |
| JP2943474B2 (ja) * | 1992-01-20 | 1999-08-30 | 日本電気株式会社 | 波形解析方法 |
| US5361032A (en) * | 1992-01-27 | 1994-11-01 | Motorola, Inc. | Method of troubleshooting electronic circuit board assemblies using temperature isolation |
| JPH06151538A (ja) * | 1992-02-03 | 1994-05-31 | Leo Giken:Kk | 半導体ウエハの評価方法及びその装置 |
| US5417494A (en) * | 1992-05-01 | 1995-05-23 | Exid, Inc. | Contactless testing of electronic materials and devices using microwaves |
| JPH0697248A (ja) * | 1992-09-16 | 1994-04-08 | Shin Etsu Handotai Co Ltd | ライフタイム測定装置及びこれを用いた測定方法 |
| JPH07105427B2 (ja) * | 1992-10-19 | 1995-11-13 | 学校法人幾徳学園 | 半導体材料のライフタイム評価方法とその装置 |
| US5521839A (en) * | 1993-09-02 | 1996-05-28 | Georgia Tech Research Corporation | Deep level transient spectroscopy (DLTS) system and method |
| JPH07153809A (ja) * | 1993-11-26 | 1995-06-16 | Nec Corp | 半導体基板の不純物分析装置および不純物分析方法 |
| CA2126481C (en) * | 1994-06-22 | 2001-03-27 | Andreas Mandelis | Non-contact photothermal method for measuring thermal diffusivity and electronic defect properties of solids |
| JP3670051B2 (ja) * | 1995-06-06 | 2005-07-13 | 株式会社神戸製鋼所 | 半導体試料のキャリアのライフタイム測定方法及びその装置 |
| US5847573A (en) * | 1995-10-13 | 1998-12-08 | Massachusetts Technological Laboratory, Inc. | Method and apparatus for structure characterization of layered semiconductors |
| US5966019A (en) * | 1996-04-24 | 1999-10-12 | Boxer Cross, Inc. | System and method for measuring properties of a semiconductor substrate in a fabrication line |
| US5867034A (en) * | 1997-01-30 | 1999-02-02 | Sokolov; Vladimir | Non-destructive method and apparatus for monitoring carrier lifetime of a semiconductor sample during fabrication |
| TW359864B (en) * | 1997-03-13 | 1999-06-01 | United Microelectronics Corp | Method for detecting dosage of polysilicon implantation |
| US5929652A (en) * | 1997-09-02 | 1999-07-27 | Midwest Research Institute | Apparatus for measuring minority carrier lifetimes in semiconductor materials |
| US6369603B1 (en) * | 1997-09-02 | 2002-04-09 | Midwest Research Institute | Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials |
| US6275060B1 (en) * | 1997-09-02 | 2001-08-14 | Midwest Research Institute | Apparatus and method for measuring minority carrier lifetimes in semiconductor materials |
| US6078183A (en) | 1998-03-03 | 2000-06-20 | Sandia Corporation | Thermally-induced voltage alteration for integrated circuit analysis |
| US6260998B1 (en) * | 2000-01-19 | 2001-07-17 | Visteon Global Technologies, Inc. | Method for specifying accelerated thermal cycling tests for electronic solder joint durability |
| HU227170B1 (en) * | 2000-02-17 | 2010-09-28 | Semilab Felvezetoe Fiz Lab Rt | Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors |
| US6909273B1 (en) * | 2000-05-05 | 2005-06-21 | Chartered Semiconductor Manufacturing Ltd. | Zero-temperature-gradient zero-bias thermally stimulated current technique to characterize defects in semiconductors or insulators |
| US6549022B1 (en) * | 2000-06-02 | 2003-04-15 | Sandia Corporation | Apparatus and method for analyzing functional failures in integrated circuits |
| TWI223097B (en) * | 2003-04-14 | 2004-11-01 | Toppoly Optoelectronics Corp | Method and apparatus for testing OLED pixels |
| US7520667B2 (en) * | 2006-05-11 | 2009-04-21 | John Bean Technologies Ab | Method and system for determining process parameters |
| ATE514095T1 (de) * | 2007-09-11 | 2011-07-15 | Soitec Silicon On Insulator | Volumenlebensdauermessung |
| US7898280B2 (en) * | 2008-09-08 | 2011-03-01 | Emil Kamieniecki | Electrical characterization of semiconductor materials |
| RU2431216C1 (ru) * | 2010-06-15 | 2011-10-10 | Государственное образовательное учреждение высшего профессионального образования Рязанский государственный радиотехнический университет | Способ определения энергии ионизации глубоких уровней в полупроводниковых барьерных структурах и устройство для его осуществления |
| CN112786472B (zh) * | 2021-01-06 | 2023-01-10 | 电子科技大学 | 一种介电温度系数修正的深能级瞬态谱测试方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1644032A1 (de) * | 1966-12-30 | 1971-03-25 | Texas Instruments Inc | Verfahren zur Einstellung der Fremdatomkonzentration bei Halbleitern |
| US3605015A (en) * | 1970-01-19 | 1971-09-14 | Bell Telephone Labor Inc | Method and apparatus for determining deep impurity concentration in semiconductors |
| HU181136B (en) * | 1980-06-07 | 1983-06-28 | Mta Mueszaki Fiz Kutato Inteze | Method and instrument for measuring change in transient capacity of semiconducting elements |
| US4427937A (en) * | 1981-09-25 | 1984-01-24 | Lin Hung C | Method of measuring time constant using a spectrum analyzer |
| US4551674A (en) * | 1982-11-12 | 1985-11-05 | At&T Bell Laboratories | Noncontacting conductivity type determination and surface state spectroscopy of semiconductor materials |
| JPS59141238A (ja) * | 1983-02-01 | 1984-08-13 | Hitachi Ltd | キヤリア寿命測定装置 |
| DE3407850A1 (de) * | 1984-02-29 | 1985-09-05 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Mikrowellen-messverfahren und -messapparatur zur kontaktlosen und zerstoerungsfreien untersuchung photoempfindlicher materialien |
| JPS61101045A (ja) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | 半導体評価方法 |
| US4755748A (en) * | 1985-06-05 | 1988-07-05 | Bell Communications Research, Inc. | Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy |
| HU196262B (en) * | 1986-03-17 | 1988-10-28 | Mta Mueszaki Fiz Kutato Inteze | Method for testing electrically active impuritles in semiconductor materials and structures and measuring arrangement for implementing method |
| US4875004A (en) * | 1988-06-01 | 1989-10-17 | The United States Of America As Represented By The Secretary Of The Army | High speed semiconductor characterization technique |
| JPH067564B2 (ja) * | 1988-09-07 | 1994-01-26 | 三菱マテリアル株式会社 | ウェーハ表面の半導体特性測定方法 |
-
1990
- 1990-08-09 JP JP2211122A patent/JP2702807B2/ja not_active Expired - Lifetime
- 1990-11-14 US US07/612,926 patent/US5047713A/en not_active Expired - Fee Related
-
1991
- 1991-05-16 EP EP91304408A patent/EP0470692A2/en not_active Withdrawn
Non-Patent Citations (3)
| Title |
|---|
| Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，４５〔７〕 （１９７４−７） Ｐ．３０２３−３０２８ |
| 応用物理、５０〔７〕 （１９８１） Ｐ．７３１−７３４ |
| 生駒俊昭、河東田隆、長谷川文夫 「電子材料シリーズ ガリウムヒ素」 （昭６３−１−３０） 丸善 Ｐ．１００−１０５ |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0470692A2 (en) | 1992-02-12 |
| EP0470692A3 (OSRAM) | 1994-02-23 |
| US5047713A (en) | 1991-09-10 |
| JPH0493043A (ja) | 1992-03-25 |
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