JP2664510B2 - 光検出装置,および光検出方法 - Google Patents
光検出装置,および光検出方法Info
- Publication number
- JP2664510B2 JP2664510B2 JP2052393A JP5239390A JP2664510B2 JP 2664510 B2 JP2664510 B2 JP 2664510B2 JP 2052393 A JP2052393 A JP 2052393A JP 5239390 A JP5239390 A JP 5239390A JP 2664510 B2 JP2664510 B2 JP 2664510B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- photodetector
- layer
- wavelength
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 90
- 238000001514 detection method Methods 0.000 claims description 58
- 238000010521 absorption reaction Methods 0.000 claims description 51
- 230000031700 light absorption Effects 0.000 claims description 45
- 238000001228 spectrum Methods 0.000 claims description 37
- 239000012535 impurity Substances 0.000 claims description 30
- 238000000862 absorption spectrum Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 10
- 238000005513 bias potential Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 description 58
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 20
- 238000010586 diagram Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 230000004044 response Effects 0.000 description 9
- 241001125929 Trisopterus luscus Species 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/028—Optical bistable devices based on self electro-optic effect devices [SEED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5265289 | 1989-03-03 | ||
JP5265189 | 1989-03-03 | ||
JP5549789 | 1989-03-08 | ||
JP5549889 | 1989-03-08 | ||
JP1-52652 | 1989-11-22 | ||
JP1-52651 | 1989-11-22 | ||
JP1-55497 | 1989-11-22 | ||
JP1-301935 | 1989-11-22 | ||
JP1-55498 | 1989-11-22 | ||
JP30193589 | 1989-11-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03227578A JPH03227578A (ja) | 1991-10-08 |
JP2664510B2 true JP2664510B2 (ja) | 1997-10-15 |
Family
ID=27523022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2052393A Expired - Fee Related JP2664510B2 (ja) | 1989-03-03 | 1990-03-02 | 光検出装置,および光検出方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5144397A (fr) |
EP (1) | EP0385803B1 (fr) |
JP (1) | JP2664510B2 (fr) |
DE (1) | DE69020189T2 (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU649672B2 (en) * | 1990-04-20 | 1994-06-02 | Telstra Corporation Limited | An electro-optic device |
WO1991016729A1 (fr) * | 1990-04-20 | 1991-10-31 | Australian And Overseas Telecommunications Corporation Limited | Dispositif electro-optique |
JP2906713B2 (ja) * | 1991-03-29 | 1999-06-21 | 三菱電機株式会社 | 光素子の多重安定性取得方法 |
JPH05264339A (ja) * | 1992-03-17 | 1993-10-12 | Hamamatsu Photonics Kk | 光検出器 |
US5302838A (en) * | 1992-06-09 | 1994-04-12 | University Of Cincinnati | Multi-quantum well injection mode device |
US5508529A (en) * | 1992-06-09 | 1996-04-16 | University Of Cincinnati | Multi-quantum well injection mode device and associated electronic neuron apparatus |
US5329136A (en) * | 1993-04-30 | 1994-07-12 | At&T Bell Laboratories | Voltage-tunable photodetector |
US5382788A (en) * | 1993-07-16 | 1995-01-17 | The United States Of America As Represented By The Secretary Of The Army | Monolithic photoconductive bipolar pulsar utilizing a radial transmission line |
JP3009562B2 (ja) * | 1993-07-30 | 2000-02-14 | 三菱電機株式会社 | 光スイッチング装置 |
US5488504A (en) * | 1993-08-20 | 1996-01-30 | Martin Marietta Corp. | Hybridized asymmetric fabry-perot quantum well light modulator |
US5552603A (en) * | 1994-09-15 | 1996-09-03 | Martin Marietta Corporation | Bias and readout for multicolor quantum well detectors |
US5615143A (en) * | 1994-09-19 | 1997-03-25 | Cornell Research Foundation, Inc. | Optomechanical terabit data storage system |
FR2756667B1 (fr) * | 1996-12-04 | 1999-02-19 | Thomson Csf | Detecteur d'ondes electromagnetiques bispectral |
KR19980050460A (ko) * | 1996-12-20 | 1998-09-15 | 양승택 | 다중 파장 동시 인식을 위한 광검출기 구조 및 그를 이용한 광검출방법 |
US5949561A (en) * | 1997-04-15 | 1999-09-07 | Lucent Technologies Inc. | Wavelength demultiplexing multiple quantum well photodetector |
JP3455456B2 (ja) * | 1998-01-09 | 2003-10-14 | Kddi株式会社 | 半導体記憶装置 |
JP2002033507A (ja) * | 2000-07-18 | 2002-01-31 | Nippon Sheet Glass Co Ltd | 受光素子および光分波器 |
KR100444912B1 (ko) * | 2002-01-21 | 2004-08-21 | 광주과학기술원 | Wdm 광통신 시스템에서 광채널의 파장/광출력 안정화방법 및 그 시스템 |
US7308202B2 (en) * | 2002-02-01 | 2007-12-11 | Cubic Corporation | Secure covert combat identification friend-or-foe (IFF) system for the dismounted soldier |
US7329895B2 (en) * | 2002-02-22 | 2008-02-12 | Honeywell International Inc. | Dual wavelength detector |
WO2009009765A1 (fr) * | 2007-07-11 | 2009-01-15 | Cubic Corporation | Modulateur à puits quantiques sur puce de type “ flip-chip ” |
US8027591B2 (en) * | 2007-10-29 | 2011-09-27 | Cubic Corporation | Resonant quantum well modulator driver |
US7859675B2 (en) * | 2007-11-06 | 2010-12-28 | Cubic Corporation | Field test of a retro-reflector and detector assembly |
JP5293257B2 (ja) * | 2009-02-20 | 2013-09-18 | 富士通株式会社 | イメージセンサ |
EP2377607B1 (fr) * | 2010-04-19 | 2018-05-30 | Corning Incorporated | Raccords fluides pour modules de microréacteur |
US9726913B2 (en) * | 2014-01-30 | 2017-08-08 | Awenyx Inc. | Semiconductor interferometric device |
JP6909165B2 (ja) * | 2018-01-15 | 2021-07-28 | 富士通株式会社 | 赤外線検出器、撮像素子、撮像システム、赤外線検出器の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4205331A (en) * | 1978-06-09 | 1980-05-27 | The United States Of America As Represented By The Secretary Of The Army | Infrared optical devices of layered structure |
JPS5516479A (en) * | 1978-07-21 | 1980-02-05 | Sumitomo Electric Ind Ltd | Heterojunction light receiving diode |
JPS5593275A (en) * | 1979-01-09 | 1980-07-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light wave separating detector |
JPS5762573A (en) * | 1980-10-03 | 1982-04-15 | Fujitsu Ltd | Multiple wavelength photoelectric converter |
JPS5927581A (ja) * | 1982-08-03 | 1984-02-14 | Seisan Gijutsu Shinko Kyokai | 光センサ |
JPS6074569A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | イメ−ジセンサ |
JPS61182273A (ja) * | 1985-02-08 | 1986-08-14 | Nippon Telegr & Teleph Corp <Ntt> | 多波長受光素子 |
US4786951A (en) * | 1985-02-12 | 1988-11-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical element and a process for producing the same |
JPH079996B2 (ja) * | 1985-03-08 | 1995-02-01 | 日本電信電話株式会社 | 半導体受光装置 |
US4843439A (en) * | 1985-08-28 | 1989-06-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
JPH0728047B2 (ja) * | 1986-02-17 | 1995-03-29 | 日本電気株式会社 | 光トランジスタ |
US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
JPH0259625A (ja) * | 1988-08-26 | 1990-02-28 | Canon Inc | 波長選択機能付光検出器 |
JPH02170581A (ja) * | 1988-12-23 | 1990-07-02 | Fujitsu Ltd | 半導体受光装置 |
JPH02194655A (ja) * | 1989-01-24 | 1990-08-01 | Nippon Telegr & Teleph Corp <Ntt> | 光検出用導波路型pinフォトダイオード |
-
1990
- 1990-03-02 DE DE69020189T patent/DE69020189T2/de not_active Expired - Fee Related
- 1990-03-02 EP EP90302263A patent/EP0385803B1/fr not_active Expired - Lifetime
- 1990-03-02 JP JP2052393A patent/JP2664510B2/ja not_active Expired - Fee Related
- 1990-03-02 US US07/487,292 patent/US5144397A/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
IEEE Journal of Quantum Electronics,Vol.QE−21,No.9,P.1462−1476(1985) |
Also Published As
Publication number | Publication date |
---|---|
DE69020189T2 (de) | 1996-02-29 |
EP0385803A3 (fr) | 1992-04-15 |
EP0385803A2 (fr) | 1990-09-05 |
JPH03227578A (ja) | 1991-10-08 |
US5144397A (en) | 1992-09-01 |
DE69020189D1 (de) | 1995-07-27 |
EP0385803B1 (fr) | 1995-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |