JP2660128B2 - 位相変化マスクの製造方法 - Google Patents

位相変化マスクの製造方法

Info

Publication number
JP2660128B2
JP2660128B2 JP32588791A JP32588791A JP2660128B2 JP 2660128 B2 JP2660128 B2 JP 2660128B2 JP 32588791 A JP32588791 A JP 32588791A JP 32588791 A JP32588791 A JP 32588791A JP 2660128 B2 JP2660128 B2 JP 2660128B2
Authority
JP
Japan
Prior art keywords
etching
phase change
film
etched
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32588791A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04355758A (ja
Inventor
浩 英 姜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansei Denshi Co Ltd
Original Assignee
Sansei Denshi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansei Denshi Co Ltd filed Critical Sansei Denshi Co Ltd
Publication of JPH04355758A publication Critical patent/JPH04355758A/ja
Application granted granted Critical
Publication of JP2660128B2 publication Critical patent/JP2660128B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
JP32588791A 1991-04-30 1991-12-10 位相変化マスクの製造方法 Expired - Fee Related JP2660128B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR91-6990 1991-04-30
KR1019910006990A KR940003582B1 (ko) 1991-04-30 1991-04-30 위상변화 마스크의 제조방법

Publications (2)

Publication Number Publication Date
JPH04355758A JPH04355758A (ja) 1992-12-09
JP2660128B2 true JP2660128B2 (ja) 1997-10-08

Family

ID=19313910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32588791A Expired - Fee Related JP2660128B2 (ja) 1991-04-30 1991-12-10 位相変化マスクの製造方法

Country Status (2)

Country Link
JP (1) JP2660128B2 (ko)
KR (1) KR940003582B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257893B2 (ja) * 1993-10-18 2002-02-18 三菱電機株式会社 位相シフトマスク、その位相シフトマスクの製造方法およびその位相シフトマスクを用いた露光方法
JP3713921B2 (ja) * 1996-10-24 2005-11-09 セイコーエプソン株式会社 インクジェット式記録ヘッドの製造方法
JP5229838B2 (ja) * 2011-11-09 2013-07-03 Ｈｏｙａ株式会社 マスクブランク及びフォトマスク

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02211450A (ja) * 1989-02-10 1990-08-22 Fujitsu Ltd 位相シフトマスクおよびその製造方法

Also Published As

Publication number Publication date
KR940003582B1 (ko) 1994-04-25
JPH04355758A (ja) 1992-12-09
KR920020615A (ko) 1992-11-21

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