JP2562569Y2 - フオトダイオード - Google Patents

フオトダイオード

Info

Publication number
JP2562569Y2
JP2562569Y2 JP1990103194U JP10319490U JP2562569Y2 JP 2562569 Y2 JP2562569 Y2 JP 2562569Y2 JP 1990103194 U JP1990103194 U JP 1990103194U JP 10319490 U JP10319490 U JP 10319490U JP 2562569 Y2 JP2562569 Y2 JP 2562569Y2
Authority
JP
Japan
Prior art keywords
electrode
photodiode
layer
film
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1990103194U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0459965U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
勝彦 徳田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP1990103194U priority Critical patent/JP2562569Y2/ja
Publication of JPH0459965U publication Critical patent/JPH0459965U/ja
Application granted granted Critical
Publication of JP2562569Y2 publication Critical patent/JP2562569Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP1990103194U 1990-09-28 1990-09-28 フオトダイオード Expired - Lifetime JP2562569Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990103194U JP2562569Y2 (ja) 1990-09-28 1990-09-28 フオトダイオード

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990103194U JP2562569Y2 (ja) 1990-09-28 1990-09-28 フオトダイオード

Publications (2)

Publication Number Publication Date
JPH0459965U JPH0459965U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-05-22
JP2562569Y2 true JP2562569Y2 (ja) 1998-02-10

Family

ID=31847976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990103194U Expired - Lifetime JP2562569Y2 (ja) 1990-09-28 1990-09-28 フオトダイオード

Country Status (1)

Country Link
JP (1) JP2562569Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122180A (ja) * 1986-11-11 1988-05-26 Fujitsu Ltd Ｐｉｎ型半導体受光装置
JP2778956B2 (ja) * 1987-02-03 1998-07-23 株式会社東芝 カプラ
JPS63239872A (ja) * 1987-03-27 1988-10-05 Hitachi Ltd 半導体受光装置

Also Published As

Publication number Publication date
JPH0459965U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-05-22

Similar Documents

Publication Publication Date Title
JP3601761B2 (ja) 受光素子およびその製造方法
US8362354B2 (en) Photovoltaic apparatus and method of manufacturing the same
US6399967B1 (en) Device for selectively detecting light by wavelengths
US6781211B2 (en) Photodiode having an active region shaped in a convex lens
JP2018152369A (ja) 裏面入射型受光素子およびその製造方法
JP5307750B2 (ja) 半導体受光素子
JP2014013844A (ja) 半導体受光素子およびその製造方法
JP2952906B2 (ja) フォトダイオード
JP2562569Y2 (ja) フオトダイオード
CN104576806A (zh) 侧入光式pin光电探测器芯片及其制作方法
JP3674255B2 (ja) 受光素子の製造方法
JPH03109779A (ja) フォトダイオード
JPS6193678A (ja) 光電変換装置
JP2007504659A (ja) 埋め込み酸化物層による金属−半導体−金属（ｍｓｍ）光検出器を有するシステムおよび方法
JP2774006B2 (ja) 半導体受光装置及びその製造方法
US6589848B1 (en) Photodetector device and method for manufacturing the same
JP2675574B2 (ja) 半導体受光素子
JPH05267708A (ja) 光半導体装置の電極構造
JPH0537005A (ja) 受光素子及びその製造方法
JP3442493B2 (ja) 半導体受光素子およびその製造方法
JP2005129776A (ja) 半導体受光素子
JPH10163516A (ja) 半導体受光素子
JPS6041737Y2 (ja) 受光素子
JPH11163383A (ja) 半導体受光素子
JP2001094087A (ja) 半導体装置の製造方法