JP2025025459A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2025025459A
JP2025025459A JP2023130237A JP2023130237A JP2025025459A JP 2025025459 A JP2025025459 A JP 2025025459A JP 2023130237 A JP2023130237 A JP 2023130237A JP 2023130237 A JP2023130237 A JP 2023130237A JP 2025025459 A JP2025025459 A JP 2025025459A
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JP
Japan
Prior art keywords
region
fwd
igbt
width
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023130237A
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English (en)
Japanese (ja)
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JP2025025459A5 (https=
Inventor
征典 宮田
Masanori Miyata
祥弘 堀田
Yoshihiro Hotta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2023130237A priority Critical patent/JP2025025459A/ja
Priority to PCT/JP2024/027756 priority patent/WO2025033354A1/ja
Priority to CN202480051834.7A priority patent/CN121713664A/zh
Publication of JP2025025459A publication Critical patent/JP2025025459A/ja
Publication of JP2025025459A5 publication Critical patent/JP2025025459A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2023130237A 2023-08-09 2023-08-09 半導体装置 Pending JP2025025459A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023130237A JP2025025459A (ja) 2023-08-09 2023-08-09 半導体装置
PCT/JP2024/027756 WO2025033354A1 (ja) 2023-08-09 2024-08-02 半導体装置
CN202480051834.7A CN121713664A (zh) 2023-08-09 2024-08-02 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023130237A JP2025025459A (ja) 2023-08-09 2023-08-09 半導体装置

Publications (2)

Publication Number Publication Date
JP2025025459A true JP2025025459A (ja) 2025-02-21
JP2025025459A5 JP2025025459A5 (https=) 2025-10-17

Family

ID=94534834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023130237A Pending JP2025025459A (ja) 2023-08-09 2023-08-09 半導体装置

Country Status (3)

Country Link
JP (1) JP2025025459A (https=)
CN (1) CN121713664A (https=)
WO (1) WO2025033354A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5680299B2 (ja) * 2009-12-25 2015-03-04 トヨタ自動車株式会社 半導体装置
JP7404702B2 (ja) * 2019-08-09 2023-12-26 富士電機株式会社 半導体装置
JP7459666B2 (ja) * 2020-06-04 2024-04-02 三菱電機株式会社 半導体装置
JP7706415B2 (ja) * 2022-04-26 2025-07-11 三菱電機株式会社 半導体装置および電力変換装置

Also Published As

Publication number Publication date
CN121713664A (zh) 2026-03-20
WO2025033354A1 (ja) 2025-02-13

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