CN121713664A - 半导体装置 - Google Patents
半导体装置Info
- Publication number
- CN121713664A CN121713664A CN202480051834.7A CN202480051834A CN121713664A CN 121713664 A CN121713664 A CN 121713664A CN 202480051834 A CN202480051834 A CN 202480051834A CN 121713664 A CN121713664 A CN 121713664A
- Authority
- CN
- China
- Prior art keywords
- region
- fwd
- igbt
- width
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-130237 | 2023-08-09 | ||
| JP2023130237A JP2025025459A (ja) | 2023-08-09 | 2023-08-09 | 半導体装置 |
| PCT/JP2024/027756 WO2025033354A1 (ja) | 2023-08-09 | 2024-08-02 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN121713664A true CN121713664A (zh) | 2026-03-20 |
Family
ID=94534834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480051834.7A Pending CN121713664A (zh) | 2023-08-09 | 2024-08-02 | 半导体装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2025025459A (https=) |
| CN (1) | CN121713664A (https=) |
| WO (1) | WO2025033354A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5680299B2 (ja) * | 2009-12-25 | 2015-03-04 | トヨタ自動車株式会社 | 半導体装置 |
| JP7404702B2 (ja) * | 2019-08-09 | 2023-12-26 | 富士電機株式会社 | 半導体装置 |
| JP7459666B2 (ja) * | 2020-06-04 | 2024-04-02 | 三菱電機株式会社 | 半導体装置 |
| JP7706415B2 (ja) * | 2022-04-26 | 2025-07-11 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
-
2023
- 2023-08-09 JP JP2023130237A patent/JP2025025459A/ja active Pending
-
2024
- 2024-08-02 CN CN202480051834.7A patent/CN121713664A/zh active Pending
- 2024-08-02 WO PCT/JP2024/027756 patent/WO2025033354A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025025459A (ja) | 2025-02-21 |
| WO2025033354A1 (ja) | 2025-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |