JP2024541191A - 高屈折率フォトレジスト組成物 - Google Patents

高屈折率フォトレジスト組成物 Download PDF

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Publication number
JP2024541191A
JP2024541191A JP2024521776A JP2024521776A JP2024541191A JP 2024541191 A JP2024541191 A JP 2024541191A JP 2024521776 A JP2024521776 A JP 2024521776A JP 2024521776 A JP2024521776 A JP 2024521776A JP 2024541191 A JP2024541191 A JP 2024541191A
Authority
JP
Japan
Prior art keywords
group
photoresist composition
negative photoresist
resin
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024521776A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024541191A5 (cg-RX-API-DMAC10.html
Inventor
フー、ペン－フェイ
チャン、ウォンボム
エル、ジョン
チュン、ミュンファ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Dow Silicones Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp, Dow Silicones Corp filed Critical Dow Corning Corp
Publication of JP2024541191A publication Critical patent/JP2024541191A/ja
Publication of JP2024541191A5 publication Critical patent/JP2024541191A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electroluminescent Light Sources (AREA)
JP2024521776A 2021-10-15 2022-08-01 高屈折率フォトレジスト組成物 Pending JP2024541191A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163255974P 2021-10-15 2021-10-15
US63/255,974 2021-10-15
PCT/US2022/039032 WO2023064023A1 (en) 2021-10-15 2022-08-01 High refractive index photoresist composition

Publications (2)

Publication Number Publication Date
JP2024541191A true JP2024541191A (ja) 2024-11-08
JP2024541191A5 JP2024541191A5 (cg-RX-API-DMAC10.html) 2025-08-06

Family

ID=83049938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024521776A Pending JP2024541191A (ja) 2021-10-15 2022-08-01 高屈折率フォトレジスト組成物

Country Status (7)

Country Link
US (1) US20240337943A1 (cg-RX-API-DMAC10.html)
EP (1) EP4416553A1 (cg-RX-API-DMAC10.html)
JP (1) JP2024541191A (cg-RX-API-DMAC10.html)
KR (1) KR20240093557A (cg-RX-API-DMAC10.html)
CN (1) CN118103773A (cg-RX-API-DMAC10.html)
TW (1) TW202334286A (cg-RX-API-DMAC10.html)
WO (1) WO2023064023A1 (cg-RX-API-DMAC10.html)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010185991A (ja) * 2009-02-12 2010-08-26 Jsr Corp 感放射線性組成物、マイクロレンズおよびその形成方法
JP2012014021A (ja) * 2010-07-01 2012-01-19 Fujifilm Corp 感光性組成物、パターン形成材料、並びに、これを用いた感光性膜、パターン形成方法、パターン膜、反射防止膜、絶縁膜、光学デバイス及び電子デバイス
JP2018066818A (ja) * 2016-10-18 2018-04-26 株式会社カネカ ネガ型感光性樹脂組成物、硬化物および積層体
WO2020008969A1 (ja) * 2018-07-05 2020-01-09 東レ株式会社 樹脂組成物、遮光膜、遮光膜の製造方法および隔壁付き基板
WO2020066420A1 (ja) * 2018-09-25 2020-04-02 富士フイルム株式会社 遮光性組成物、硬化膜、遮光膜、固体撮像素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100795109B1 (ko) 2001-02-23 2008-01-17 후지필름 가부시키가이샤 포지티브 감광성 조성물
US7756384B2 (en) 2004-11-08 2010-07-13 Dow Corning Corporation Method for forming anti-reflective coating
JP5074488B2 (ja) * 2006-06-28 2012-11-14 ダウ・コーニング・コーポレイション 電子求引官能性を有する塩基性添加剤を含むシルセスキオキサン樹脂システム
US10597495B2 (en) * 2016-02-19 2020-03-24 Dow Silicones Corporation Aged polymeric silsesquioxanes
JP7265356B2 (ja) 2016-05-03 2023-04-26 ダウ シリコーンズ コーポレーション シルセスキオキサン樹脂及びオキサアミン組成物
CN109415513B (zh) * 2016-06-16 2022-02-25 美国陶氏有机硅公司 富含硅的倍半硅氧烷树脂
TWI742160B (zh) * 2016-09-30 2021-10-11 美商道康寧公司 橋接聚矽氧樹脂、膜、電子裝置及相關方法
KR102557109B1 (ko) * 2017-03-29 2023-07-20 도레이 카부시키가이샤 네가티브형 감광성 수지 조성물, 경화막, 경화막을 구비하는 소자 및 유기 el 디스플레이, 그리고 그의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010185991A (ja) * 2009-02-12 2010-08-26 Jsr Corp 感放射線性組成物、マイクロレンズおよびその形成方法
JP2012014021A (ja) * 2010-07-01 2012-01-19 Fujifilm Corp 感光性組成物、パターン形成材料、並びに、これを用いた感光性膜、パターン形成方法、パターン膜、反射防止膜、絶縁膜、光学デバイス及び電子デバイス
JP2018066818A (ja) * 2016-10-18 2018-04-26 株式会社カネカ ネガ型感光性樹脂組成物、硬化物および積層体
WO2020008969A1 (ja) * 2018-07-05 2020-01-09 東レ株式会社 樹脂組成物、遮光膜、遮光膜の製造方法および隔壁付き基板
WO2020066420A1 (ja) * 2018-09-25 2020-04-02 富士フイルム株式会社 遮光性組成物、硬化膜、遮光膜、固体撮像素子

Also Published As

Publication number Publication date
EP4416553A1 (en) 2024-08-21
TW202334286A (zh) 2023-09-01
US20240337943A1 (en) 2024-10-10
CN118103773A (zh) 2024-05-28
KR20240093557A (ko) 2024-06-24
WO2023064023A1 (en) 2023-04-20

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