JP2024538953A5 - - Google Patents
Info
- Publication number
- JP2024538953A5 JP2024538953A5 JP2024519970A JP2024519970A JP2024538953A5 JP 2024538953 A5 JP2024538953 A5 JP 2024538953A5 JP 2024519970 A JP2024519970 A JP 2024519970A JP 2024519970 A JP2024519970 A JP 2024519970A JP 2024538953 A5 JP2024538953 A5 JP 2024538953A5
- Authority
- JP
- Japan
- Prior art keywords
- ruthenium
- ligand
- ruthenium surface
- agent
- reacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163257214P | 2021-10-19 | 2021-10-19 | |
| US63/257,214 | 2021-10-19 | ||
| US17/674,579 US11802342B2 (en) | 2021-10-19 | 2022-02-17 | Methods for wet atomic layer etching of ruthenium |
| US17/674,579 | 2022-02-17 | ||
| US17/674,593 US11820919B2 (en) | 2021-10-19 | 2022-02-17 | Ruthenium CMP chemistry based on halogenation |
| US17/674,593 | 2022-02-17 | ||
| PCT/US2022/041873 WO2023069198A1 (en) | 2021-10-19 | 2022-08-29 | Ruthenium cmp chemistry based on halogenation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024538953A JP2024538953A (ja) | 2024-10-28 |
| JP2024538953A5 true JP2024538953A5 (https=) | 2025-05-23 |
Family
ID=85982714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024519970A Pending JP2024538953A (ja) | 2021-10-19 | 2022-08-29 | ハロゲン化に基づくルテニウムｃｍｐ化学物質 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11820919B2 (https=) |
| JP (1) | JP2024538953A (https=) |
| KR (1) | KR20240087752A (https=) |
| TW (1) | TW202334340A (https=) |
| WO (1) | WO2023069198A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11820919B2 (en) | 2021-10-19 | 2023-11-21 | Tokyo Electron Limited | Ruthenium CMP chemistry based on halogenation |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6290736B1 (en) | 1999-02-09 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Chemically active slurry for the polishing of noble metals and method for same |
| JP2002158194A (ja) * | 2000-11-20 | 2002-05-31 | Toshiba Corp | 化学的機械的研磨用スラリ及び半導体装置の製造方法 |
| KR100535074B1 (ko) | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정 |
| KR100444308B1 (ko) | 2001-12-29 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
| KR100648264B1 (ko) | 2004-08-17 | 2006-11-23 | 삼성전자주식회사 | 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법 |
| US7563383B2 (en) * | 2004-10-12 | 2009-07-21 | Cabot Mircroelectronics Corporation | CMP composition with a polymer additive for polishing noble metals |
| US8591763B2 (en) | 2006-03-23 | 2013-11-26 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
| US8012878B2 (en) * | 2007-06-30 | 2011-09-06 | Intel Corporation | Atomic layer volatilization process for metal layers |
| US8008202B2 (en) | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| WO2009054370A1 (ja) | 2007-10-23 | 2009-04-30 | Hitachi Chemical Company, Ltd. | Ｃｍｐ研磨液及びこれを用いた基板の研磨方法 |
| KR101210125B1 (ko) | 2010-12-14 | 2012-12-07 | 한양대학교 산학협력단 | 절연막 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법 |
| US8906123B2 (en) | 2010-12-29 | 2014-12-09 | Air Products And Chemicals Inc. | CMP slurry/method for polishing ruthenium and other films |
| CN103252710B (zh) | 2013-04-08 | 2016-04-20 | 清华大学 | 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法 |
| JPWO2014175393A1 (ja) | 2013-04-25 | 2017-02-23 | 日立化成株式会社 | Ｃｍｐ用研磨液及びこれを用いた研磨方法 |
| EP3774647A4 (en) * | 2018-03-28 | 2022-04-06 | FUJIFILM Electronic Materials U.S.A, Inc. | CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR RUTHENIUM MATERIALS |
| US10937691B2 (en) | 2018-09-27 | 2021-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming an abrasive slurry and methods for chemical-mechanical polishing |
| CN113383047A (zh) | 2018-12-10 | 2021-09-10 | Cmc材料股份有限公司 | 用于钌化学机械抛光的不含氧化剂的浆料 |
| US20220010206A1 (en) * | 2019-02-13 | 2022-01-13 | Tokuyama Corporation | Semiconductor wafer treatment liquid containing hypochlorite ions and ph buffer |
| WO2021162978A1 (en) | 2020-02-13 | 2021-08-19 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
| US11820919B2 (en) | 2021-10-19 | 2023-11-21 | Tokyo Electron Limited | Ruthenium CMP chemistry based on halogenation |
-
2022
- 2022-02-17 US US17/674,593 patent/US11820919B2/en active Active
- 2022-08-29 WO PCT/US2022/041873 patent/WO2023069198A1/en not_active Ceased
- 2022-08-29 JP JP2024519970A patent/JP2024538953A/ja active Pending
- 2022-08-29 KR KR1020247010014A patent/KR20240087752A/ko active Pending
- 2022-10-17 TW TW111139182A patent/TW202334340A/zh unknown
-
2023
- 2023-10-18 US US18/381,516 patent/US12037517B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2024538953A5 (https=) | ||
| JP2024539061A (ja) | ルテニウムの湿式原子層エッチング方法 | |
| JP3397501B2 (ja) | 研磨剤および研磨方法 | |
| TWI448539B (zh) | Copper oxide etching solution and etching method using the same | |
| TWI876529B (zh) | 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法 | |
| JP2025519414A5 (https=) | ||
| JP2017059824A (ja) | ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法 | |
| JP2004027224A (ja) | ヨウ素およびヨウ素蒸気捕捉剤を含む化学的機械研磨組成物 | |
| JP2003229420A (ja) | エッチング液 | |
| JP2002543174A (ja) | １級アルコールからのカルボン酸塩の製造方法 | |
| US12037517B2 (en) | Ruthenium CMP chemistry based on halogenation | |
| CN1162954A (zh) | 在铱存在下通过羰基化反应制备羧酸或相关酯的方法 | |
| JPH046941B2 (https=) | ||
| JP2864732B2 (ja) | ハロニトロフェノールの水性還元法 | |
| JP7031073B1 (ja) | ハロゲン酸素酸溶液の製造方法 | |
| JP2004225152A5 (https=) | ||
| CN116693365A (zh) | 一种六氟丁二烯的制备方法和制备装置系统 | |
| JP2002011352A (ja) | ロジウム含有溶液 | |
| JP2987892B2 (ja) | 溶存酸素の除去方法 | |
| JP2003336097A5 (https=) | ||
| FR2713620A1 (fr) | Procédé de préparation d'une solution à base d'iridium, solution obtenue et utilisation de celle-ci en tant que catalyseur. | |
| JP2016132701A (ja) | エッチング液及びそれを用いたエッチング方法 | |
| KR100310253B1 (ko) | 메탈식각 또는 비아식각 후 발생하는 폴리머의 세정 방법 | |
| CN119455524B (zh) | 一种吸尘器不锈钢滤网的蚀刻方法及吸尘器不锈钢滤网 | |
| JP2004335689A (ja) | 銅研磨用スラリー |