TW202334340A - 基於鹵化的釕cmp化學組成 - Google Patents

基於鹵化的釕cmp化學組成 Download PDF

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Publication number
TW202334340A
TW202334340A TW111139182A TW111139182A TW202334340A TW 202334340 A TW202334340 A TW 202334340A TW 111139182 A TW111139182 A TW 111139182A TW 111139182 A TW111139182 A TW 111139182A TW 202334340 A TW202334340 A TW 202334340A
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TW
Taiwan
Prior art keywords
ruthenium
cmp
slurry
ligand
agent
Prior art date
Application number
TW111139182A
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English (en)
Chinese (zh)
Inventor
保羅 阿貝爾
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/674,579 external-priority patent/US11802342B2/en
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202334340A publication Critical patent/TW202334340A/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
TW111139182A 2021-10-19 2022-10-17 基於鹵化的釕cmp化學組成 TW202334340A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US202163257214P 2021-10-19 2021-10-19
US63/257,214 2021-10-19
US17/674,579 US11802342B2 (en) 2021-10-19 2022-02-17 Methods for wet atomic layer etching of ruthenium
US17/674,579 2022-02-17
US17/674,593 US11820919B2 (en) 2021-10-19 2022-02-17 Ruthenium CMP chemistry based on halogenation
US17/674,593 2022-02-17

Publications (1)

Publication Number Publication Date
TW202334340A true TW202334340A (zh) 2023-09-01

Family

ID=85982714

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111139182A TW202334340A (zh) 2021-10-19 2022-10-17 基於鹵化的釕cmp化學組成

Country Status (5)

Country Link
US (2) US11820919B2 (https=)
JP (1) JP2024538953A (https=)
KR (1) KR20240087752A (https=)
TW (1) TW202334340A (https=)
WO (1) WO2023069198A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11820919B2 (en) 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
JP2002158194A (ja) * 2000-11-20 2002-05-31 Toshiba Corp 化学的機械的研磨用スラリ及び半導体装置の製造方法
KR100535074B1 (ko) 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
KR100444308B1 (ko) 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR100648264B1 (ko) 2004-08-17 2006-11-23 삼성전자주식회사 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US8591763B2 (en) 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8012878B2 (en) * 2007-06-30 2011-09-06 Intel Corporation Atomic layer volatilization process for metal layers
US8008202B2 (en) 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
WO2009054370A1 (ja) 2007-10-23 2009-04-30 Hitachi Chemical Company, Ltd. Ｃｍｐ研磨液及びこれを用いた基板の研磨方法
KR101210125B1 (ko) 2010-12-14 2012-12-07 한양대학교 산학협력단 절연막 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법
US8906123B2 (en) 2010-12-29 2014-12-09 Air Products And Chemicals Inc. CMP slurry/method for polishing ruthenium and other films
CN103252710B (zh) 2013-04-08 2016-04-20 清华大学 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法
JPWO2014175393A1 (ja) 2013-04-25 2017-02-23 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
EP3774647A4 (en) * 2018-03-28 2022-04-06 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR RUTHENIUM MATERIALS
US10937691B2 (en) 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
CN113383047A (zh) 2018-12-10 2021-09-10 Cmc材料股份有限公司 用于钌化学机械抛光的不含氧化剂的浆料
US20220010206A1 (en) * 2019-02-13 2022-01-13 Tokuyama Corporation Semiconductor wafer treatment liquid containing hypochlorite ions and ph buffer
WO2021162978A1 (en) 2020-02-13 2021-08-19 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
US11820919B2 (en) 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation

Also Published As

Publication number Publication date
US20230118455A1 (en) 2023-04-20
US20240043721A1 (en) 2024-02-08
US11820919B2 (en) 2023-11-21
WO2023069198A1 (en) 2023-04-27
JP2024538953A (ja) 2024-10-28
KR20240087752A (ko) 2024-06-19
US12037517B2 (en) 2024-07-16

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