JP2004225152A5 - - Google Patents
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- JP2004225152A5 JP2004225152A5 JP2003017949A JP2003017949A JP2004225152A5 JP 2004225152 A5 JP2004225152 A5 JP 2004225152A5 JP 2003017949 A JP2003017949 A JP 2003017949A JP 2003017949 A JP2003017949 A JP 2003017949A JP 2004225152 A5 JP2004225152 A5 JP 2004225152A5
- Authority
- JP
- Japan
- Prior art keywords
- medium
- processing method
- substrate processing
- substrate
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 30
- 238000003672 processing method Methods 0.000 claims 19
- 239000010949 copper Substances 0.000 claims 11
- 239000003795 chemical substances by application Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000002243 precursor Substances 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000006227 byproduct Substances 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 239000003446 ligand Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- VYXHVRARDIDEHS-QGTKBVGQSA-N (1z,5z)-cycloocta-1,5-diene Chemical compound C\1C\C=C/CC\C=C/1 VYXHVRARDIDEHS-QGTKBVGQSA-N 0.000 claims 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims 1
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 claims 1
- 239000004912 1,5-cyclooctadiene Substances 0.000 claims 1
- FJPGAMCQJNLTJC-UHFFFAOYSA-N 2,3-Heptanedione Chemical compound CCCCC(=O)C(C)=O FJPGAMCQJNLTJC-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- IVCXCMWIDPRYEH-UHFFFAOYSA-N but-2-yne Chemical compound CC#CC.CC#CC IVCXCMWIDPRYEH-UHFFFAOYSA-N 0.000 claims 1
- 239000002738 chelating agent Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 claims 1
- 150000002366 halogen compounds Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003017949A JP2004225152A (ja) | 2003-01-27 | 2003-01-27 | 基板処理方法および半導体装置の製造方法 |
| CNA2003801093041A CN1745193A (zh) | 2003-01-27 | 2003-12-26 | 半导体装置 |
| PCT/JP2003/016989 WO2004081255A1 (ja) | 2003-01-27 | 2003-12-26 | 半導体装置 |
| AU2003292700A AU2003292700A1 (en) | 2003-01-27 | 2003-12-26 | Semiconductor device |
| KR1020057013741A KR20050094053A (ko) | 2003-01-27 | 2003-12-26 | 기판 처리 방법 및 반도체 장치의 제조 방법 |
| US11/190,127 US20050260846A1 (en) | 2003-01-27 | 2005-07-27 | Substrate processing method, semiconductor device production method, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003017949A JP2004225152A (ja) | 2003-01-27 | 2003-01-27 | 基板処理方法および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004225152A JP2004225152A (ja) | 2004-08-12 |
| JP2004225152A5 true JP2004225152A5 (https=) | 2005-10-20 |
Family
ID=32904961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003017949A Pending JP2004225152A (ja) | 2003-01-27 | 2003-01-27 | 基板処理方法および半導体装置の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20050260846A1 (https=) |
| JP (1) | JP2004225152A (https=) |
| KR (1) | KR20050094053A (https=) |
| CN (1) | CN1745193A (https=) |
| AU (1) | AU2003292700A1 (https=) |
| WO (1) | WO2004081255A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004228526A (ja) * | 2003-01-27 | 2004-08-12 | Tokyo Electron Ltd | 基板処理方法および半導体装置の製造方法 |
| US7695760B2 (en) | 2004-06-04 | 2010-04-13 | Yamanashi University | Deposition method for oxide thin film or stacked metal thin films using supercritical fluid or subcritical fluid, and deposition apparatus therefor |
| JP2006061862A (ja) | 2004-08-30 | 2006-03-09 | Univ Of Yamanashi | 超臨界流体中に連続的に低圧の気体を添加する方法およびそのための装置 |
| JP2006120714A (ja) | 2004-10-19 | 2006-05-11 | Tokyo Electron Ltd | 成膜方法 |
| US7008853B1 (en) * | 2005-02-25 | 2006-03-07 | Infineon Technologies, Ag | Method and system for fabricating free-standing nanostructures |
| CN106733945B (zh) * | 2016-12-30 | 2022-11-29 | 上海颐柏热处理设备有限公司 | 一种超临界状态清洗系统及方法 |
| JP7362300B2 (ja) * | 2019-06-04 | 2023-10-17 | 東京エレクトロン株式会社 | 基板処理装置及びその制御方法 |
| US20250087501A1 (en) * | 2021-08-05 | 2025-03-13 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02209729A (ja) * | 1989-02-09 | 1990-08-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び異物除去装置 |
| JPH09139374A (ja) * | 1995-11-15 | 1997-05-27 | Hitachi Ltd | 表面処理方法および装置ならびにこれにより得られた素子 |
| US5789027A (en) * | 1996-11-12 | 1998-08-04 | University Of Massachusetts | Method of chemically depositing material onto a substrate |
| JP3929108B2 (ja) * | 1997-05-21 | 2007-06-13 | 富士通株式会社 | 回路基板の配線形成方法 |
| US6194650B1 (en) * | 1997-08-27 | 2001-02-27 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Coated object and process for producing the same |
| JPH1187306A (ja) * | 1997-09-12 | 1999-03-30 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界乾燥装置 |
| JP3945872B2 (ja) * | 1997-09-16 | 2007-07-18 | 株式会社荏原製作所 | めっき前処理方法 |
| JPH11216437A (ja) * | 1998-01-30 | 1999-08-10 | Sharp Corp | 超臨界流体洗浄方法及び超臨界流体洗浄装置 |
| JP2000063891A (ja) * | 1998-08-17 | 2000-02-29 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界二酸化炭素による洗浄装置 |
| US6066196A (en) * | 1998-09-18 | 2000-05-23 | Gelest, Inc. | Method for the chemical vapor deposition of copper-based films and copper source precursors for the same |
| JP4660661B2 (ja) * | 2000-02-22 | 2011-03-30 | コスモ石油株式会社 | プラスチックのメッキ前処理方法、メッキ方法、メッキ物の製造方法及びメッキ装置 |
| US6890853B2 (en) * | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| EP1314799B1 (en) * | 2000-08-24 | 2013-10-16 | Hideo Yoshida | Electrochemical treating method such as electroplating and electrochemical reaction device therefor |
| US7357138B2 (en) * | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
-
2003
- 2003-01-27 JP JP2003017949A patent/JP2004225152A/ja active Pending
- 2003-12-26 AU AU2003292700A patent/AU2003292700A1/en not_active Abandoned
- 2003-12-26 WO PCT/JP2003/016989 patent/WO2004081255A1/ja not_active Ceased
- 2003-12-26 KR KR1020057013741A patent/KR20050094053A/ko not_active Ceased
- 2003-12-26 CN CNA2003801093041A patent/CN1745193A/zh active Pending
-
2005
- 2005-07-27 US US11/190,127 patent/US20050260846A1/en not_active Abandoned
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