JP2004225152A - 基板処理方法および半導体装置の製造方法 - Google Patents

基板処理方法および半導体装置の製造方法 Download PDF

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Publication number
JP2004225152A
JP2004225152A JP2003017949A JP2003017949A JP2004225152A JP 2004225152 A JP2004225152 A JP 2004225152A JP 2003017949 A JP2003017949 A JP 2003017949A JP 2003017949 A JP2003017949 A JP 2003017949A JP 2004225152 A JP2004225152 A JP 2004225152A
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Japan
Prior art keywords
medium
substrate
film
substrate processing
processing method
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Pending
Application number
JP2003017949A
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English (en)
Japanese (ja)
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JP2004225152A5 (https=
Inventor
Banson Buzan
バンソン ブザン
Kenichi Kubo
謙一 久保
Yoshinori Kureishi
芳憲 暮石
Tomohiro Oota
与洋 太田
Hidekazu Kondo
英一 近藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003017949A priority Critical patent/JP2004225152A/ja
Priority to CNA2003801093041A priority patent/CN1745193A/zh
Priority to PCT/JP2003/016989 priority patent/WO2004081255A1/ja
Priority to AU2003292700A priority patent/AU2003292700A1/en
Priority to KR1020057013741A priority patent/KR20050094053A/ko
Publication of JP2004225152A publication Critical patent/JP2004225152A/ja
Priority to US11/190,127 priority patent/US20050260846A1/en
Publication of JP2004225152A5 publication Critical patent/JP2004225152A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
    • C23C18/1865—Heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886—Multistep pretreatment
    • C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemically Coating (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003017949A 2003-01-27 2003-01-27 基板処理方法および半導体装置の製造方法 Pending JP2004225152A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003017949A JP2004225152A (ja) 2003-01-27 2003-01-27 基板処理方法および半導体装置の製造方法
CNA2003801093041A CN1745193A (zh) 2003-01-27 2003-12-26 半导体装置
PCT/JP2003/016989 WO2004081255A1 (ja) 2003-01-27 2003-12-26 半導体装置
AU2003292700A AU2003292700A1 (en) 2003-01-27 2003-12-26 Semiconductor device
KR1020057013741A KR20050094053A (ko) 2003-01-27 2003-12-26 기판 처리 방법 및 반도체 장치의 제조 방법
US11/190,127 US20050260846A1 (en) 2003-01-27 2005-07-27 Substrate processing method, semiconductor device production method, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003017949A JP2004225152A (ja) 2003-01-27 2003-01-27 基板処理方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2004225152A true JP2004225152A (ja) 2004-08-12
JP2004225152A5 JP2004225152A5 (https=) 2005-10-20

Family

ID=32904961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003017949A Pending JP2004225152A (ja) 2003-01-27 2003-01-27 基板処理方法および半導体装置の製造方法

Country Status (6)

Country Link
US (1) US20050260846A1 (https=)
JP (1) JP2004225152A (https=)
KR (1) KR20050094053A (https=)
CN (1) CN1745193A (https=)
AU (1) AU2003292700A1 (https=)
WO (1) WO2004081255A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237620A (ja) * 2005-02-25 2006-09-07 Infineon Technologies Ag 自立型ナノ構造部を作成する方法およびそのシステム
US7651671B2 (en) 2004-08-30 2010-01-26 National University Corporation University Of Yamanashi Method of adding low-pressure gas continuously to supercritical fluid and apparatus therefor
US7695760B2 (en) 2004-06-04 2010-04-13 Yamanashi University Deposition method for oxide thin film or stacked metal thin films using supercritical fluid or subcritical fluid, and deposition apparatus therefor
WO2023013435A1 (ja) * 2021-08-05 2023-02-09 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2023168535A (ja) * 2019-06-04 2023-11-24 東京エレクトロン株式会社 基板処理装置及びその制御方法
TWI913495B (zh) 2021-08-05 2026-02-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004228526A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2006120714A (ja) 2004-10-19 2006-05-11 Tokyo Electron Ltd 成膜方法
CN106733945B (zh) * 2016-12-30 2022-11-29 上海颐柏热处理设备有限公司 一种超临界状态清洗系统及方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209729A (ja) * 1989-02-09 1990-08-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び異物除去装置
JPH09139374A (ja) * 1995-11-15 1997-05-27 Hitachi Ltd 表面処理方法および装置ならびにこれにより得られた素子
US5789027A (en) * 1996-11-12 1998-08-04 University Of Massachusetts Method of chemically depositing material onto a substrate
JP3929108B2 (ja) * 1997-05-21 2007-06-13 富士通株式会社 回路基板の配線形成方法
US6194650B1 (en) * 1997-08-27 2001-02-27 Kabushiki Kaisha Toyota Chuo Kenkyusho Coated object and process for producing the same
JPH1187306A (ja) * 1997-09-12 1999-03-30 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥装置
JP3945872B2 (ja) * 1997-09-16 2007-07-18 株式会社荏原製作所 めっき前処理方法
JPH11216437A (ja) * 1998-01-30 1999-08-10 Sharp Corp 超臨界流体洗浄方法及び超臨界流体洗浄装置
JP2000063891A (ja) * 1998-08-17 2000-02-29 Nippon Telegr & Teleph Corp <Ntt> 超臨界二酸化炭素による洗浄装置
US6066196A (en) * 1998-09-18 2000-05-23 Gelest, Inc. Method for the chemical vapor deposition of copper-based films and copper source precursors for the same
JP4660661B2 (ja) * 2000-02-22 2011-03-30 コスモ石油株式会社 プラスチックのメッキ前処理方法、メッキ方法、メッキ物の製造方法及びメッキ装置
US6890853B2 (en) * 2000-04-25 2005-05-10 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
EP1314799B1 (en) * 2000-08-24 2013-10-16 Hideo Yoshida Electrochemical treating method such as electroplating and electrochemical reaction device therefor
US7357138B2 (en) * 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7695760B2 (en) 2004-06-04 2010-04-13 Yamanashi University Deposition method for oxide thin film or stacked metal thin films using supercritical fluid or subcritical fluid, and deposition apparatus therefor
US7651671B2 (en) 2004-08-30 2010-01-26 National University Corporation University Of Yamanashi Method of adding low-pressure gas continuously to supercritical fluid and apparatus therefor
JP2006237620A (ja) * 2005-02-25 2006-09-07 Infineon Technologies Ag 自立型ナノ構造部を作成する方法およびそのシステム
JP2023168535A (ja) * 2019-06-04 2023-11-24 東京エレクトロン株式会社 基板処理装置及びその制御方法
JP7553208B2 (ja) 2019-06-04 2024-09-18 東京エレクトロン株式会社 基板処理装置及びその制御方法
WO2023013435A1 (ja) * 2021-08-05 2023-02-09 東京エレクトロン株式会社 基板処理方法および基板処理装置
JPWO2023013435A1 (https=) * 2021-08-05 2023-02-09
JP7720915B2 (ja) 2021-08-05 2025-08-08 東京エレクトロン株式会社 基板処理方法および基板処理装置
TWI913495B (zh) 2021-08-05 2026-02-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置

Also Published As

Publication number Publication date
US20050260846A1 (en) 2005-11-24
WO2004081255A1 (ja) 2004-09-23
AU2003292700A1 (en) 2004-09-30
KR20050094053A (ko) 2005-09-26
CN1745193A (zh) 2006-03-08

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