JP2024538953A5 - - Google Patents
Info
- Publication number
- JP2024538953A5 JP2024538953A5 JP2024519970A JP2024519970A JP2024538953A5 JP 2024538953 A5 JP2024538953 A5 JP 2024538953A5 JP 2024519970 A JP2024519970 A JP 2024519970A JP 2024519970 A JP2024519970 A JP 2024519970A JP 2024538953 A5 JP2024538953 A5 JP 2024538953A5
- Authority
- JP
- Japan
- Prior art keywords
- ruthenium
- ligand
- ruthenium surface
- agent
- reacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163257214P | 2021-10-19 | 2021-10-19 | |
| US63/257,214 | 2021-10-19 | ||
| US17/674,593 US11820919B2 (en) | 2021-10-19 | 2022-02-17 | Ruthenium CMP chemistry based on halogenation |
| US17/674,579 | 2022-02-17 | ||
| US17/674,593 | 2022-02-17 | ||
| US17/674,579 US11802342B2 (en) | 2021-10-19 | 2022-02-17 | Methods for wet atomic layer etching of ruthenium |
| PCT/US2022/041873 WO2023069198A1 (en) | 2021-10-19 | 2022-08-29 | Ruthenium cmp chemistry based on halogenation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024538953A JP2024538953A (ja) | 2024-10-28 |
| JP2024538953A5 true JP2024538953A5 (enExample) | 2025-05-23 |
| JP7883709B2 JP7883709B2 (ja) | 2026-07-02 |
Family
ID=85982714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024519970A Active JP7883709B2 (ja) | 2021-10-19 | 2022-08-29 | ハロゲン化に基づくルテニウムｃｍｐ化学物質 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US11820919B2 (enExample) |
| JP (1) | JP7883709B2 (enExample) |
| KR (1) | KR102983327B1 (enExample) |
| WO (1) | WO2023069198A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11820919B2 (en) | 2021-10-19 | 2023-11-21 | Tokyo Electron Limited | Ruthenium CMP chemistry based on halogenation |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6290736B1 (en) | 1999-02-09 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Chemically active slurry for the polishing of noble metals and method for same |
| JP2002158194A (ja) * | 2000-11-20 | 2002-05-31 | Toshiba Corp | 化学的機械的研磨用スラリ及び半導体装置の製造方法 |
| KR100535074B1 (ko) | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정 |
| KR100444308B1 (ko) | 2001-12-29 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
| KR100648264B1 (ko) | 2004-08-17 | 2006-11-23 | 삼성전자주식회사 | 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법 |
| US7563383B2 (en) * | 2004-10-12 | 2009-07-21 | Cabot Mircroelectronics Corporation | CMP composition with a polymer additive for polishing noble metals |
| US8591763B2 (en) | 2006-03-23 | 2013-11-26 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
| US8012878B2 (en) * | 2007-06-30 | 2011-09-06 | Intel Corporation | Atomic layer volatilization process for metal layers |
| US8008202B2 (en) | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| WO2009054370A1 (ja) | 2007-10-23 | 2009-04-30 | Hitachi Chemical Company, Ltd. | Ｃｍｐ研磨液及びこれを用いた基板の研磨方法 |
| KR101210125B1 (ko) | 2010-12-14 | 2012-12-07 | 한양대학교 산학협력단 | 절연막 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법 |
| US8906123B2 (en) | 2010-12-29 | 2014-12-09 | Air Products And Chemicals Inc. | CMP slurry/method for polishing ruthenium and other films |
| CN103252710B (zh) | 2013-04-08 | 2016-04-20 | 清华大学 | 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法 |
| US20160107286A1 (en) | 2013-04-25 | 2016-04-21 | Hitachi Chemical Company, Ltd. | Cmp polishing solution and polishing method using same |
| EP3774647A4 (en) * | 2018-03-28 | 2022-04-06 | FUJIFILM Electronic Materials U.S.A, Inc. | CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR RUTHENIUM MATERIALS |
| US10937691B2 (en) | 2018-09-27 | 2021-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming an abrasive slurry and methods for chemical-mechanical polishing |
| JP2022512187A (ja) | 2018-12-10 | 2022-02-02 | シーエムシー マテリアルズ，インコーポレイティド | ルテニウムｃｍｐ用の酸化剤不含スラリー |
| EP3926663A4 (en) * | 2019-02-13 | 2022-12-21 | Tokuyama Corporation | SEMICONDUCTOR WAFER TREATMENT LIQUID WITH HYPOCHLORITIONS AND PH BUFFER |
| CN114945648B (zh) | 2020-02-13 | 2025-06-20 | 富士胶片电子材料美国有限公司 | 抛光组合物及其使用方法 |
| US11820919B2 (en) | 2021-10-19 | 2023-11-21 | Tokyo Electron Limited | Ruthenium CMP chemistry based on halogenation |
-
2022
- 2022-02-17 US US17/674,593 patent/US11820919B2/en active Active
- 2022-08-29 KR KR1020247010014A patent/KR102983327B1/ko active Active
- 2022-08-29 JP JP2024519970A patent/JP7883709B2/ja active Active
- 2022-08-29 WO PCT/US2022/041873 patent/WO2023069198A1/en not_active Ceased
-
2023
- 2023-10-18 US US18/381,516 patent/US12037517B2/en active Active
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