JP2025519414A5 - - Google Patents

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Publication number
JP2025519414A5
JP2025519414A5 JP2024571342A JP2024571342A JP2025519414A5 JP 2025519414 A5 JP2025519414 A5 JP 2025519414A5 JP 2024571342 A JP2024571342 A JP 2024571342A JP 2024571342 A JP2024571342 A JP 2024571342A JP 2025519414 A5 JP2025519414 A5 JP 2025519414A5
Authority
JP
Japan
Prior art keywords
solution
temperature
substrate
passivation layer
ruthenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024571342A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025519414A (ja
Filing date
Publication date
Priority claimed from US17/835,065 external-priority patent/US12506014B2/en
Application filed filed Critical
Priority claimed from PCT/US2023/020568 external-priority patent/WO2023239495A1/en
Publication of JP2025519414A publication Critical patent/JP2025519414A/ja
Publication of JP2025519414A5 publication Critical patent/JP2025519414A5/ja
Pending legal-status Critical Current

Links

JP2024571342A 2022-06-08 2023-05-01 非等温湿式原子層エッチングの方法 Pending JP2025519414A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/835,065 US12506014B2 (en) 2021-10-19 2022-06-08 Methods for non-isothermal wet atomic layer etching
US17/835,065 2022-06-08
PCT/US2023/020568 WO2023239495A1 (en) 2022-06-08 2023-05-01 Methods for non-isothermal wet atomic layer etching

Publications (2)

Publication Number Publication Date
JP2025519414A JP2025519414A (ja) 2025-06-26
JP2025519414A5 true JP2025519414A5 (enExample) 2026-04-28

Family

ID=89118802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024571342A Pending JP2025519414A (ja) 2022-06-08 2023-05-01 非等温湿式原子層エッチングの方法

Country Status (4)

Country Link
JP (1) JP2025519414A (enExample)
KR (1) KR20250020402A (enExample)
TW (1) TW202405932A (enExample)
WO (1) WO2023239495A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12604691B2 (en) 2023-08-30 2026-04-14 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum in aqueous solution
WO2025221366A1 (en) * 2024-04-16 2025-10-23 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum in aqueous solution
TW202617934A (zh) * 2024-09-29 2026-05-01 日商東京威力科創股份有限公司 使用鹵化反應之鎢的濕式原子層蝕刻的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335294B1 (en) * 1999-04-22 2002-01-01 International Business Machines Corporation Wet cleans for cobalt disilicide processing
US9646883B2 (en) * 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
WO2017099718A1 (en) * 2015-12-08 2017-06-15 Intel Corporation Atomic layer etching of transition metals by halogen surface oxidation
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US11437250B2 (en) * 2018-11-15 2022-09-06 Tokyo Electron Limited Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions

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